Abstract: A system for converting DC power (22) into an RF electromagnetic field in a processing chamber, the system being composed of: a coil (16) constructed to surround the processing chamber; and an RF power generator (20) including a free-running oscillator (26) having a DC power input and an RF power output, the power output connected to a load impedance which includes the coil for supplying RF current to the coil at a frequency which is dependent on the load impedance.

Abstract: A plasma processing apparatus is of an internal electrode type, and an inductive coupling type electrode arranged facing a substrate has a shape formed by bending back a conductor at its central portion. A high frequency power is supplied to an end of the electrode so that a standing wave of half wavelength are produced at straight portions formed by bending back the electrode to make an antinode there and thus a plasma discharge is generated around the electrode. The controlled standing waves with its antinodes positively generated at the straight portions of the electrode are effectively used.

Abstract: A plasma reactor for processing a semiconductor wafer includes a side wall and an overhead ceiling defining a chamber, a workpiece support cathode within the chamber having a working surface facing the ceiling for supporting a semiconductor workpiece, process gas inlets for introducing a process gas into the chamber and an RF bias power generator having a bias power frequency. There is a bias power feed point at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of the RF conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface.

Abstract: The present invention provides a matching circuit which has a wide range in which matching can be achieved and the matched state of which is stabilized with respect to a change in the load state. To an input terminal (31) of a matching circuit (30), one terminal of a first variable reactance element (32) is connected. The other terminal of the first variable reactance element (32) is connected to a point between a first fixed reactance element (33a) and a second fixed reactance element (33b), which are connected in series. The first fixed reactance element (33a) is grounded, and the second fixed reactance element (33b) is connected to one terminal of a second variable reactance element (36) and connected to one terminal of a stripline (37). The other terminal of the second variable reactance element (36) is grounded, and the other terminal of the stripline (37) is connected to an output terminal (38).

Abstract: An induction plasma torch comprises a tubular torch body, a gas distributor head located at the proximal end of the torch body for supplying at least one gaseous substance into the chamber within the torch body, a higher frequency power supply connected to a first induction coil mounted coaxial to the tubular torch body, a lower frequency solid state power supply connected to a plurality of second induction coils mounted coaxial to the tubular torch body between the first induction coil and the distal end of this torch body. The first induction coil provides the inductive energy necessary to ignite the gaseous substance to form a plasma. The second induction coils provide the working energy necessary to operate the plasma torch. The second induction coils can be connected to the solid state power supply in series and/or in parallel to match the impedance of this solid state power supply.

Abstract: The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. An RF plasma source power supply is connected across each of the plural conductors.

Abstract: A method for plasma jet welding by means of a free radio frequency-induced plasma beam wherein, the rf-induced plasma beam is generated by a procedure involving a second process gas into a tube so that it has a tangential flow component and the introduction of the plasma through a metal expansion jet at the outlet.

Abstract: An inductive plasma torch operating at atmospheric pressure is used for wafer or glass substrate processing. Said torch employs a linear type of plasma confinement. This linear torch is particularly suitable for photoresist etching and processes in which it has the advantages of high chemical isotropic etch rate and low plasma damage.

Abstract: An electrode assembly for supplying RF power from a RF power source having an output impedance to an electrically non-linear medium, the assembly being composed of: a drive electrode in communication with the medium and forming with the medium a load impedance; and an impedance match network coupled between the RF power source and the drive electrode for matching the output impedance of the RF source to the load impedance. The match network has an output component that is directly connected to the drive electrode. The electrode assembly can further have a body of RF energy absorbing material disposed between the match network and the drive electrode, the absorbing material having a frequency dependent energy absorption characteristic which increases with frequency.

Abstract: A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber.

Abstract: Disclosed is a parallel resonance antenna comprising: a whirl antenna having a plurality of antenna units installed two-dimensionally and radially around a central point, each of the antenna units having a ground point at a predetermined position thereof, portions outside the ground points respectively being bent in a same direction, the antenna units having a same size and direction, angles between the antenna units at the central point being all the same; a central conductive line connected to the central point to be normal to the whirl antenna, for being supplied with an RF power; a metal plate installed over and apart from the whirl antenna, the metal plate being connected with end portions of the antenna units, and having a penetration hole through which the central conductive line passes without contacting with the metal plate; and a variable resonance capacitor installed in series between the central conductive line and the metal plate.

Abstract: A method for controlling a plasma used for materials processing includes generating a power for forming an electronegative plasma, detecting a signal that is related to a parameter of the plasma, and modulating the power generated in response to the signal. Modulation of the power causes a reduction in an instability of the parameter of the plasma. An apparatus for controlling a materials processing electronegative plasma includes a signal detector for detecting a signal that is related to a parameter of the plasma, and a power modulator for causing a modulation of the power for forming the plasma in response to the signal.

Abstract: A spiral-like multi-turn coil excites a plasma for treating a workpiece in a vacuum plasma processor. In one embodiment two of the turns have a discontinuity. Each discontinuity has a capacitor connected across it. An RF source drives the coil via a matching network, an inductor connected to one coil excitation terminal and a capacitor connected to another coil excitation terminal. The impedances of the inductors and the capacitors at the RF source frequency and the discontinuity locations are such as to cause a standing wave voltage of the coil to have (1) equal and opposite values at the coil terminals, (2) sudden amplitude and slope changes, slope reversals and polarity reversals at each of the discontinuities, and (3) three gradual standing wave voltage polarity reversals, spaced from each other by 120°. Two of the gradual polarity reversals are azimuthally aligned with the discontinuities. In a second embodiment, one turn has a discontinuity having a series capacitor connected across it.

Abstract: An electrostatically shielded toroidal plasma and radical source is provided. The plasma source includes a grounded metallic plasma source chamber that defines an interior for plasma generation. The plasma source chamber is configured from two L-shaped portions arranged to form rectangularly shaped enclosure. Dielectric breaks are defined by gaps between the two L-shaped portions. A drive inductor is configured such that the metallic plasma source chamber is positioned between loops of the drive inductor.

Abstract: Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of wedge-shaped induction coils are distributed around a circle. The sides of adjacent coils are parallel, thereby enhancing the radial uniformity of the magnetic field produced by the array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.

Abstract: In one embodiment, an absorptive filter network is provided between an RF generator and a semiconductor processing reactor. The absorptive filter network includes an absorptive filter circuit which allows energies at a fundamental frequency to pass while absorbing energies at frequencies away from the fundamental frequency. An absorptive filter circuit is located on the reactor-side of the absorptive filter network to isolate the RF generator from the effects of the non-linear loading presented by a plasma in the reactor. Another absorptive filter circuit is located on the RF generator-side of the absorptive filter network to present a stable voltage waveform to the plasma.

Abstract: An electrode device for a plasma processing system is presented. The electrode device is installed in a chamber of the plasma processing system. The electrode device comprises a plurality of electrode assemblies. Each electrode assembly has at least one first electrode and at least one second electrode. The first electrode is connected to a first output of a power supply, and the second electrode, connected to a second output of the power supply. Each electrode assembly is spaced apart from each other so as to generate plasma in the chamber. The electrode assembly comprises at least two electrodes (the first electrode and the second electrode) with shorter distance between the electrodes, and the type of the power supply can be altered to increase the electric field intensity, the hollow cathode effect, plasma density and uniformity. The electrode device can raise the efficiency in processing the object, and increase the uniformity of the electric field and upgrade the quality of the object.

Abstract: The present invention generally provides a method for processing a semiconductor substrate, wherein the method includes positioning a substrate in a processing chamber having at least a first and second coils positioned above the substrate and supplying a first electrical current to the first coil. The method further includes supplying a second current to the second coil and regulating a current ratio of electrical current supplied to the first and second coils with a power distribution network in communication with the first and second coils and a single power supply.

Abstract: The present invention is an organic halogen compound decomposition device which utilizes a plasma, wherein a stable and reliable ignition at operation commencement is possible, and where following ignition, a good plasma form can be maintained and stable operation is possible. The organic halogen compound decomposition device is equipped with a cylindrical waveguide 7 made up of an outer conductor 8 and an inner conductor 9, and a dual construction discharge tube 5 made up of an inner tube 11 and an outer tube 12 which is provided inside the cylindrical waveguide 7 and on an identical axis. Furthermore, a probe antenna 9a formed from an extension of the inner conductor 9 is positioned so as to encircle the discharge tube 5, and the tip of the inner tube 11 is positioned further inwards than the tip of the probe antenna 9a.

Abstract: Various embodiments of a plasma coil, methods of making the same, a processing apparatus utilizing plasma processes and methods of manufacture are disclosed. In one aspect, a plasma coil is provided that includes a first conductor coil that has a plurality of turns. An innermost of the plurality of turns terminates to define a central void portion and an outermost of the plurality of turns defines a peripheral portion. A first conductor plate is positioned in the central void portion of and coupled in series to the first conductor coil. The conductor plate provides a more uniform and intense electrical field in order to retard residue formation on plasma chamber windows.

Abstract: The present invention provides a method and apparatus for processing substrates. A processing system includes a chamber having a top mounted pumping assembly. The chamber comprises a ceiling disposed on a chamber body and having an opening formed therein. The pumping assembly is connected to the ceiling and registered with the opening. The pumping assembly operates to evacuate the chamber to a desired pressure. One or more gases are supplied to the chamber via a gas distribution chamber and are exhausted from the chamber via the opening formed in the ceiling.

Abstract: Among the embodiments of the present invention, are apparatus, systems, and methods for managing energetic charged particles emitted nearly isotropically from a fusion device. One apparatus of the present invention includes a fusion device in a container and an electric current carrying winding disposed about the container to provide a magnetic field to direct charged particles generated by the device. A pair of electric current carrying coils are positioned within the container to control the strength of the magnetic field in a region between these coils, such that effects on fusion plasma can be minimized. In other forms, charged particles provided from a fusion device are directed along a magnetic channel to an energy converter to provide electric power. One such form includes a magnetic expander and an electron-ion separator to provide a net electric current.

Abstract: An inductive plasma processor includes an RF plasma excitation coil having plural windings, each having a first end connected in parallel to be driven by a single RF source via a single matching network. Second ends of the windings are connected to ground by termination capacitors, in turn connected by a lead to ground. A current sensor including a winding around a toroidal core is coupled to the lead between each termination capacitor and ground. The current sensor is surrounded by a grounded shield. There is minimum electromagnetic interference from an ambient RF environment to the current sensor, to provide an accurate current sensor.

Abstract: An ion source (10) for an ion implanter is provided, comprising: (i) an ionization chamber (14) defined at least partially by chamber walls (12), and having an inlet (45) into which a sputtering gas may be injected and an aperture (18) through which an ion beam (B) may be extracted; (ii) an ionizing electron source (44) for ionizing the sputtering gas to form a sputtering plasma; and (iii) a sputterable repeller (100). The sputterable repeller both (a) repels electrons emitted by the electron source, and (b) provides a source of sputtered material that can be ionized by the electron source. The sputterable repeller (100) comprises a slug (108) of sputterable material, and further comprises mounting structure (102, 104) for removably mounting the slug within the ionization chamber (14), so that the slug is made removably detachable from the mounting structure.

Abstract: A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber ceiling and a chamber side wall and a workpiece support pedestal within the chamber, a process gas conduit and gas distribution orifices facing the interior of the chamber and coupled to the process gas conduit, a conductive enclosure outside of the chamber and overlying the ceiling and having a conductive side wall with a bottom edge supported on the chamber ceiling and a conductive ceiling supported on a top edge of the conductive side wall, and a conductive post extending parallel with the conductive side wall from a center portion of the conductive ceiling toward the chamber ceiling. An RF power applicator of the reactor includes inner and outer conductive radial spokes. The set of inner conductive spokes extends radially outwardly from and is electrically connected to the conductive post toward the conductive side wall.

Abstract: An inductively coupled plasma apparatus is provided, wherein the inductively coupled plasma apparatus includes a process chamber having a wafer susceptor on which a substrate is installed, a top plasma source chamber which is installed on the process chamber, a reactor, which is installed in the top plasma source chamber, having a channel through which a gas flows, wherein the reactor supplies plasma reaction products to the process chamber, an inductor, having two ends, is installed between the top plasma source chamber and the reactor and is wound around the reactor, an opening which is positioned within a circumferential space in which the inductor is installed between the reactor and the process chamber, and a shutter operable to open and close the opening. Thus, a uniform radial distribution of radicals emanating from a plasma source can be improved.

Abstract: Various embodiments of a plasma coil, methods of making the same, a processing apparatus utilizing plasma processes and methods of manufacture are disclosed. In one aspect, a plasma coil is provided that includes a first conductor coil that has a plurality of turns. An innermost of the plurality of turns terminates to define a central void portion and an outermost of the plurality of turns defines a peripheral portion. A first conductor plate is positioned in the central void portion of and coupled in series to the first conductor coil. The conductor plate provides a more uniform and intense electrical field in order to retard residue formation on plasma chamber windows.

Abstract: A method for generating a discharge plasma which covers a surface of a body in a gas at pressures from 0.01 Torr to atmospheric pressure, by applying a radio frequency power with frequencies between approximately 1 MHz and 10 GHz across a plurality of paired insulated conductors on the surface. At these frequencies, an arc-less, non-filamentary plasma can be generated to affect the drag characteristics of vehicles moving through the gas. The plasma can also be used as a source in plasma reactors for chemical reaction operations.

Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.

Abstract: An apparatus for dissociating gases includes a plasma chamber that may be formed from a metallic material and a transformer having a magnetic core surrounding a portion of the plasma chamber and having a primary winding. The apparatus also includes one or more switching semiconductor devices that are directly coupled to a voltage supply and that have an output coupled to the primary winding of the transformer. The one or more switching semiconductor devices drive current in the primary winding that induces a potential inside the chamber that forms a plasma which completes a secondary circuit of the transformer.

Abstract: An improved toroidal low-field plasma source allows plasma ignition within a wider range of gas conditions than permitted by prior art plasma sources. Power efficiency of the plasma source is improved by automatically adjusting the power delivered to the plasma based on the load to the power supply. The plasma source can be operated over a wider pressure range than allowed by prior art plasma sources. The plasma source can be operated so as to increase the output of atomic species from the source. The plasma source can be operated to increase the etch rate of organic materials. The plasma source can efficiently remove hazardous gas compounds from effluent gas streams by converting them into scrubbable products.

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Abstract: The inductively coupled plasma source and antenna geometry are significant factors in determining plasma and process uniformity inside the chamber. Growing demands for processing larger and larger wafers or LCD substrates and providing higher and higher degrees of plasma uniformity challenge the current ICP type antenna designs and push development of sources. Branching RF antenna, featuring a plurality of major and minor branches, provides improved coverage of processing area, reduced standing wave effect, improved uniformity of inductively coupled electromagnetic field, more uniform plasma production, and more homogeneous processing conditions throughout the whole processing area.

Abstract: Induction coils of an induction coupling type plasma processing apparatus are divided into a plurality of coil elements, and a plurality of lead wire portions for connecting between the coil elements. The coil elements are disposed in the inside of a process chamber, while the lead wire portions are disposed in the outside of the process chamber. The coil elements disposed in the process chamber are in the form of short arcs as a result of the division, so that they can be easily arranged symmetrically with respect to the center of the process chamber, whereby a uniform plasma distribution can be easily achieved.

Abstract: A method of removing metal-containing polymeric material and ion implanted or plasma damaged photoresist from a surface using a plasma jet system, by generating radicals having high energy and high density from atmospheric plasma by introducing a reactant gas to the plasma, and placing the surface at a distance from the plasma, whereby ionic reaction on the surface is minimized while the removing action of the radicals on the surface is maintained.

Abstract: A plasma processing apparatus includes a processing chamber having a working volume. A single Radio-Frequency (RF) plasma generating antenna is positioned outside the working volume for inducing an electric field in the working volume. A dielectric trough extends into a wall of the chamber. The antenna is non-planar and transfers power through at least one wall and the base of the trough.

Abstract: The present invention is directed to a plasma processor, and more specifically, to an apparatus to reduce or eliminate plasma lighting inside a gas line in a strong RF field in the plasma processor. More particularly, the present invention uses shielding and gas flow restricting to reduce or eliminate plasma lighting in a gas line used to deliver gas to cool the work piece in the plasma processor.

Abstract: An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn with a first turn gap; a second turn with a second turn gap, where the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn; and a first turn-second turn connector electrically connected between a second end of the first turn and a first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap.

Abstract: An inductively coupled plasma source with one or more sets of chamber (202a, 202b) compartments divided (completely or partially) by a flat casing (204a, 204b) including encased toroidal ferromagnetic inductors (206, 208) with the induced discharge current passing between the divided sub-chambers in closed loops through passages in such toroidal ferromagnetic inductors (206, 208). The chamber has a gas inlet (222) and an outlet (223) for flowing the working gas mixture.

Abstract: Method and apparatus for distributing power from a single power source to a plurality of coils disposed on a processing chamber which provides controllable plasma uniformity across a substrate disposed in the processing chamber. The apparatus for distributing power from a power source to two or more coils disposed on a process chamber comprises a connection between the power source and a first coil, a series capacitor connected between the power source and the second coil, and a shunt capacitor connected to a node between the second coil and the power source. The method for distributing power from one power source to a plurality of coils comprises connecting a first coil between the power source and a ground connection, connecting a first power distribution network to the power source, wherein each power distribution network comprises a series capacitor and a shunt capacitor, and connecting a second coil between the first power distribution network and a ground connection.

Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.

Abstract: In an apparatus for the doping of vessel supports (stents) with radioactive and non-radioactive atoms comprising an electron-cyclotron-ion-source (ECRIS) with an arrangement for extracting an ion beam from the ECRIS, a magnetic separation device for the splitting of the ion beam arranged in a downstream area of the extracted ion beam and an irradiation chamber in which the vessel supports are exposed to the selected partial ion beam, the ECRIS includes a microwave-permeable plasma chamber with a magnetic, six-pole arrangement, an electrically conductive tube portion disposed within the plasma chamber co-axially with the six-pole arrangement and having an in-coupling opening and also being axially movable for an adjustment of an optimal in-coupling and a co-axial cable extends through the in-coupling opening and has an outer sleeve which is in electrical contact and an inner conductor which is electrically insulated and forms at the inner wall of the tube a flat loop whose end is in contact with the tube wall.

Abstract: An inductive coil assembly for plasma processing apparatus includes a coil and an external screen. The coil is constituted by a plurality of coil portions each including an inductive segment. The assembly also includes respective connectors for connecting each portion in parallel with the others and to an RF source. The connectors are configured such that the current flowing in any part of the coil other than the segments is balanced by current flowing in an opposite sense in an adjacent part.

Abstract: A processing system 12 for processing a substrate with an ionized plasma comprises a processing chamber 13 defining a processing space 14 and including a substrate support 17, a gas inlet 20, and a plasma source for creating an ionized plasma in the processing space. The plasma source comprises an inductive element 24 operable for coupling electrical energy into the processing space. The inductive element 24 winds around portions of the processing space 14 inside the processing chamber 13 and is encased inside a dielectric material 30 to physically separate the element from the processing space while allowing the element to couple electrical energy into the processing space. Alternatively, the inductive element is coupled to a DC power supply 98 for enhancing its magnetization to reduce the capacitive coupling of energy between the inductive element and the plasma.

Abstract: An apparatus for dissociating gases includes a plasma chamber that may be formed from a metallic material and a transformer having a magnetic core surrounding a portion of the plasma chamber and having a primary winding. The apparatus also includes one or more switching semiconductor devices that are directly coupled to a voltage supply and that have an output coupled to the primary winding of the transformer. The one or more switching semiconductor devices drive current in the primary winding that induces a potential inside the chamber that forms a plasma which completes a secondary circuit of the transformer.

Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.

Abstract: A compound plasma configuration can be formed from a device having pins, and an annular electrode surrounding the pins. A cylindrical conductor is electrically connected to, and coaxial with, the annular electrode, and a helical conductor coaxial with the cylindrical conductor. The helical conductor is composed of wires, each wire electrically connected to each pin. The annular electrode and the pins are disposed in the same direction away from the interior of the conducting cylinder.

Abstract: A processing system for processing a substrate with a plasma comprises a processing chamber defining a processing space and including a substrate support therein for supporting a substrate in the processing space and a gas inlet for introducing a process gas into said processing space. A plasma source is operable for creating a plasma in the processing space from process gas introduced therein. The plasma source comprises a dielectric window which interfaces with the processing chamber proximate the processing space and an inductive element positioned outside of the chamber and proximate the dielectric window. The inductive element is operable for coupling electrical energy through the dielectric window and into the processing space to create a plasma therein and comprises a variety of alternative designs for providing a dense, uniform plasma.

Abstract: A method and an apparatus of plasma treating a wafer with low capacitive coupling, high induction power density and high uniformity of reactive species were disclosed in this invention. A first embodiment manages a multiturn helical coil to match with an impedance at an RF drive frequency for reducing capacitive coupling. A second embodiment uses a can-like dielectric to prompt plasma species approaching the wafer surface at a low pressure, thus providing higher plasma density and higher etch rate. A third embodiment uses a cap-like dielectric to raise the ceiling above the wafer for improving the plasma generation uniformity in the chamber.

Abstract: An RF probe for a plasma chamber picks up current and voltage samples of the RF power applied to an RF plasma chamber, and the RF voltage and current waveforms are supplied to respective mixers. A local oscillator supplies both mixers with a local oscillator signal at the RF frequency plus or minus about 15 KHz, so that the mixers provide respective voltage and current baseband signals that are frequency shifted down to the audio range. The phase relation to the applied current and voltage is preserved in the baseband signals. These baseband signals are then applied to a stereo, two-channel A/D converter, which provides a serial digital signal to a digital signal processor or DSP. A local oscillator interface brings a feedback signal from the DSP to the local oscillator. The DSP can be suitably programmed to obtain complex Fast Fourier Transforms of the voltage and current baseband samples.