Abstract: Aspects of the subject technology allow an output driver to be implemented using one or more transistors having an oxide-breakdown voltage below the output voltage swing of the output driver. The output driver can include one or more source followers, where a source follower provides voltage-level shifting of a voltage before the voltage is supplied to a gate of a transistor to prevent a source-to-gate voltage or a gate-to-source voltage of the transistor from exceeding the oxide-breakdown voltage of the transistor.

Abstract: The present invention is a method and circuitry for driving a high-threshold MOS device on low input voltages. The invention includes a circuit that operates on a supply voltage that is less than the threshold voltage of the high-threshold MOS device. The circuit includes one or more low threshold MOS inverters and one or more capacitors that operate at low input voltages. The one or more low threshold MOS inverters operate in a manner that the one or more capacitors get charged to a voltage greater than the low input voltage. Thereafter, the charged capacitor drives the high threshold MOS device.

Abstract: A voltage mode driver circuit includes a plurality of VMD cells and a calibration component. The plurality of VMD cells are configured to generate a calibrated emphasis level according to a calibration signal. The calibration component is configured to determine a voltage dependence effect. Additionally, the calibration component is configured to generate the calibration signal according to the determined voltage dependence effect.

Abstract: A highly-reliable gate driving circuit achieved by suppressing the amount of hot-carriers generated in a MOSFET. In the gate driving circuit having NOEMI circuits, same-type NOEMI circuits are connected in series with a p-channel MOSFET constituting a gate charging circuit and an n-channel MOSFET constituting a gate discharging circuit, respectively, so as to suppress the amount of hot-carriers generated in the p-channel MOSFET and the n-channel MOSFET.

Abstract: A gate driving circuit includes a gate control circuit and a gate voltage limit circuit. The gate control circuit establishes or breaks electrical continuity of a gate voltage supply path from a power source line to a gate terminal of a transistor in response to an on-command and an off-command. The gate voltage limit circuit limits a gate voltage of the transistor to be less than or equal to a first voltage in response to the on-command at least in a period until a determination of whether an electric current greater than a fault criterion value flows to the transistor ends and then limits the gate voltage to be less than or equal to a second voltage.

Abstract: A drive circuit includes a switching transistor having a design maximum voltage V2 and a cascode transistor having a design maximum voltage V1, wherein the cascode transistor is source-drain coupled in series with the switching transistor. The circuit further includes a current source coupled between an intermediate voltage node and a gate of the cascode transistor. If the drive circuit is a low side driver, the intermediate voltage node receives an intermediate voltage Vmed set below a high supply voltage Vhigh and that meets the following conditions: a) Vmed<=V2 and b) Vhigh?Vmed<=V1. If the drive circuit is a high side driver, the intermediate voltage node receives an intermediate voltage Vmed set below the high supply voltage and that mees the following conditions: a) Vmed<=V1 and b) Vhigh?Vmed<=V2. The circuit may be configured as a push pull driver by coupling a high side driver and low side driver in series.

Abstract: An input buffer is provided. The input buffer receives an input signal through an input terminal and outputs an output signal at an output terminal. The input circuit includes an input circuit and a level shifting circuit. The input circuit receives the input signal and generates a buffer signal according to the input signal. The level shifting circuit receives a first supply voltage and the buffer signal and generates the output signal at the output terminal according to the buffer signal and the first supply voltage. The first high level of the input signal is higher than a voltage level of the first supply voltage. When the input signal is at a first high level, the input circuit generates the buffer signal whose voltage level is between the first high level of the input signal and the voltage level of the first supply voltage.

Abstract: A capacitive load drive circuit may comprise a high current drive amplifier configured to be coupled to a capacitive load during a high current ramp up of the voltage across the capacitive load to a cut off voltage; a low current drive amplifier configured to be connected to the capacitive load during a low current ramp up of the voltage across the capacitive load, from the cut off voltage to a maximum voltage across the capacitive load; and the high current drive amplifier configured to be connected to the capacitive load during a high current ramp down of the voltage across the capacitive load. The low current drive amplifier may be connected to the capacitive load during a period of steady state of the voltage across the capacitive load, intermediate the low current ramp up and the high current ramp down.

Abstract: A controller of a drive unit is configured so as to control a voltage supplied to a gate resistor of a voltage-driven element by using of a voltage of a feedback connector when an electrical connection between the feedback connector and the gate resistor of the voltage-driven element is ensured. Further, the controller of the drive unit is configured so as to control the voltage supplied to the gate resistor of the voltage-driven element by using of a voltage of an output connector when the electrical connection between the feedback connector and the gate resistor of the voltage-driven element is not ensured.

Abstract: An integrated circuit device can include a plurality of analog circuit blocks, each comprising an input section configured to receive an analog input signal, and an output section configured to drive a plurality of output signals corresponding to the input signal, each output signal having a different maximum drive strength; and a signal network comprising a plurality of switches, and providing a configurable connection between at least outputs of the analog circuit blocks and a plurality of N connections to the integrated circuit device, including less than N direct signal paths between each analog circuit block and the N connections.

Abstract: A switch apparatus includes a semiconductor power switch connected for delivering current while driven by a gate drive voltage and an adaptive gate drive unit connected to a gate of the power switch. The gate drive unit is configured to select one of a plurality of pre-determined time functions for a gate drive voltage, and to deliver the gate drive voltage to the gate of the power switch according to the selected time function, thereby driving the power switch to deliver current within a pre-determined slew rate envelope.

Abstract: A low-side off-detection signal compares the gate signal of a low-side transistor with a predetermined first level to generate a low-side off-detection signal indicating that the low-side transistor is off. The low-side detection transistor is of the same type as the low-side transistor, with the source connected to the ground terminal, and the gate receiving the low-side transistor gate signal. A first resistor is arranged between the drain of the low-side detection transistor and the power supply terminal. A first bypass circuit is arranged in parallel with the first resistor, and is configured to switch to the conduction state when a control signal is a level which instructs the low-side transistor to switch off, and to switch to the cut-off state when the control signal level instructs the low-side transistor to switch on. The drain signal of the low-side detection transistor is output as the low-side off-detection signal.

Abstract: In accordance with an embodiment, a method of operating a gate driving circuit includes receiving a reference timing pulse, measuring the received timing pulse according to a local clock generator of the gate driving circuit, and generating a switching control signal based on the measured received timing pulse.

Abstract: A bootstrap gate driver including a load indication unit, a bootstrap gate-drive unit and a drive-control unit is provided. The load indication unit is configured to generate a load indication signal in response to a state of a load. The bootstrap gate-drive unit is configured to drive a switch-transistor circuit in response to an inputted pulse-width-modulation (PWM) signal, wherein the switch-transistor circuit has a high-side driving path and a low-side driving path. The drive-control unit is coupled to the load indication unit and the bootstrap gate-drive unit, and configured to enable or disable the high-side driving path in response to the load indication signal. In the invention, the operation of the low-side driving path is not affected by enabling or disabling the high-side driving path.

Abstract: A transmission channel configured to transmit high-voltage pulses and to receive echos of the high-voltage pulses includes a high voltage buffer, a voltage clamp and a switch. The voltage clamp may include clamping transistors and switching off transistors coupled together in series with body diodes in anti-series. The transmission channel may include a reset circuit configured to bias the transmission channel between pulses. The switch may include a bootstrap circuit.

Abstract: A level shifting circuit includes a first circuit, a second circuit and an output voltage controlling circuit. The first circuit is coupled to an input node, an output node and a first supply voltage node and configured to pull an output voltage at the output node toward the first supply voltage in accordance with an input voltage applied to the input node. The second circuit is coupled to the first circuit, the output node and the second supply voltage node and configured to pull the output voltage toward the second supply voltage in accordance with the input voltage from the first circuit. The output voltage controlling circuit is coupled to the output node and configured to control the output voltage within a range narrower than a range from the first voltage to the second voltage.

Abstract: An apparatus and method for protecting a switch from overvoltage transients that might otherwise occur when the switch is turned off. A transient-suppression controller controls a rate-of-change of voltage across a switch by delivering control signals to the switch. Controlling the rate-of-change of voltage enables controlled absorption of stored parasitic energy that might otherwise cause overvoltage transients. In some embodiments the switch is a MOSFET and the control signals are currents delivered to the gate of the MOSFET. In some embodiments, control is open-loop; in other embodiments closed-loop control is used to maintain essentially constant voltage across the switch as it turns off.

Abstract: Internal voltage generation circuits are provided. The internal voltage generation circuit includes a driving signal generator comparing first and second internal voltage signals with lower and upper limit reference voltage signals to generate a pull-up driving signal and a pull-down driving signal, a driver generating a first voltage and a second voltage in response to the pull-up driving signal and the pull-down driving signal, a selecting signal generator comparing the first internal voltage signal with the second internal voltage signal to generate a selection signal, and a selection transmitter that transmits any one of the first and second voltages to the first or second internal voltage signal in response to the selection signal.

Abstract: Transmitters for data communication can include a pattern generator configured to generate parallel data stream composed of k bits, k being a natural number greater than 2, a serializer configured to convert the parallel data stream into a serial data stream, a pre-emphasis circuit configured to pre-emphasize the serial data stream based on a pre-emphasis control value, to transmit the pre-emphasized serial data stream to a receiver via a first transmission line, and a pre-emphasis controller configured to receive measured values of transmission errors of the pre-emphasized serial data stream from the receiver via a second transmission line, and configured to set the pre-emphasis control value corresponding to a minimum measured value of the transmission errors, to an optimum pre-emphasis control value.

Abstract: A driving circuit outputs an output voltage as a driving signal to the gate of a semiconductor element based on a control signal given from an input circuit. The output voltage is at “H” (ON level) if it is determined by a power supply voltage VCC, and is at “L” (OFF level) if it is determined by a ground voltage GND. A reference power supply section includes a series connection of resistors. The reference power supply section obtains a voltage determined by dividing a potential difference between the power supply voltage VCC and the ground voltage GND by a predetermined dividing ratio (resistance ratio between the resistors) as a reference voltage. A buffer circuit applies an output voltage as a reference signal determined by the reference voltage to the source of the semiconductor element.

Abstract: A power stage has a differential output stage 2 driven by one or more buffer stages 4. The buffer stages 4 are implemented as high and low side buffers 12,14, each of which is itself a differential buffer implemented using transistors formed in an isolated-well technology such as triple-well CMOS.

Abstract: A semiconductor integrated circuit includes a first output driver configured to drive a first comparison signal, which is generated by comparing a voltage of a pad coupled to an external resistor with an upper-limit reference voltage, according to drivability determined by a pull-up code and a pull-down code, and output the driven signal as first output data; and a second output driver configured to drive a second comparison signal, which is generated by comparing the voltage of the pad with a lower-limit reference voltage, according to the drivability determined by the pull-up code and the pull-down code, and output the driven signal as second output data.

Abstract: An output circuit providing isolation between inputs and the output employs first and second opto-couplers for isolation. Pulse activation of the first opto-coupler turns on an output transistor and pulse activation of the second opto-coupler turns off the output transistor. An input stage of the output circuit is and light emitting devices of the first and second opto-couplers are powered by a first power source and an output stage of the output circuit is powered from an external power source. Power consumption by the input stage of output circuit occurs only during pulse activation of the first and second opto-couplers.

Abstract: The driver circuit includes a first controlling circuit that outputs, to a gate of the auxiliary pMOS transistor, a first controlling signal that rises in synchronization with a rising of the first pulse signal and falls after a delay from a falling of the first pulse signal. The driver circuit includes a second controlling circuit that outputs, to a gate of the auxiliary nMOS transistor, a second controlling signal that rises in synchronization with a rising of the second pulse signal and falls after a delay from a falling of the second pulse signal.

Abstract: Embodiments of a memory controller are described. This memory controller communicates signals to a memory device via a signal line, which can be a data signal line or a command/address signal line. Termination of the signal line is divided between an external impedance outside of the memory controller and an internal impedance within the memory controller. The memory controller does not activate the external impedance prior to communicating the signals and, therefore, does not deactivate the external impedance after communicating the signals. The internal impedance of the memory controller can be enabled or disabled in order to reduce interface power consumption. Moreover, the internal impedance may be implemented using a passive component, an active component or both. For example, the internal impedance may include either or both an on-die termination and at least one driver.

Abstract: A drive waveform signal is pulse-modulated and a modulated signal is generated, the obtained modulated signal is power-amplified, and then, a drive signal is demodulated using a low pass filter. Thus obtained drive signal is negatively fed back, and thereby, the resonance peak of the low pass filter is suppressed. In this regard, by bringing gain in a wider frequency domain to take a fixed value or more, a drive signal having a voltage exceeding a power supply voltage may be stably generated.

Abstract: I/O circuits and a method for transmitting different types of I/O signals are disclosed. An embodiment of the I/O circuit comprises multiple transistors with multiple switches coupled to the transistors. The switches may be used to selectively couple the transistors to a power source or to another transistor to form different transistor configurations. The transistors may be configured to form a parallel configuration or a stacked configuration. Stacking up transistors may reduce voltage swings in the transistors and subsequently reduce degradation in the transistors.

Abstract: A receiver circuit includes a buffering unit configured to buffer an input signal and generate a buffering signal; a variation detection unit configured to generate a control signal according to a level of a reference voltage; a driving unit configured to drive the buffering signal and generate an output signal; and a compensation unit configured to control a slew rate of the output signal in response to the control signal.

Abstract: A circuit may include an input node configured to receive a signal and an output node configured to be coupled to a load. The circuit may also include a first circuit coupled between the input node and the output node. The first circuit may be configured to receive the signal and to drive the signal on the output node at a first voltage. The circuit may also include an active device coupled to the output node and a second circuit coupled to the active device and the input node. The second circuit may be configured to receive the signal and to drive the signal to the active device at a second voltage that is approximately equal to the first voltage.

Abstract: An LIN transmitter includes a current mirror coupled to a transmit output node and a control circuit coupled to a transmit input node for controlling the current mirror with various load current control signals.

Abstract: Supply voltage sequencing circuitry includes a first sequencer (10-1) that produces an active level of a Power Good signal PG if a first supply voltage VOUT1 exceeds an upper threshold V90% while a control signal EN_PG is active, and produces an inactive level of PG if EN_PG is inactive. The PG level is latched when a control signal EN is inactive. A Power Down signal PD is produced if VOUT1 is less than a lower threshold V10% while EN is inactive. An active level of PD is produced when EN is active. A power-up sequence of supply voltages VOUT1, VOUT2, and VOUT3 monitored by the first sequencer and similar second (10-2) and third (10-3) sequencers, respectively, is determined by connection of PG of each of the first and second sequencers to control the supply voltage monitored by the next sequencer.

Abstract: There is disclosed a driver circuits and method for driving a micro-electro-mechanical system. A driver circuit may include a converter to convert a digital input value into a pulse-width modulated signal with precise amplitude. A low pass filter may extract an average DC component of the pulse-width modulated signal. An amplifier may amplify the average DC component to provide an output voltage to drive the MEMS.

Abstract: Level shifting circuitry is provided for generating an output signal in response to an input signal. The level shifting circuitry includes a pulldown path for pulling the output signal to a lower output voltage level in response to a first transition of the input signal and a pullup path for pulling the output signal to a higher output voltage level in response to a second transition of the input signal. Pullup control circuitry places the pullup path in a non-conductive state in response to the output signal being pulled to the higher output voltage level. A keeper path keeps the output signal at the higher output voltage level while the pullup path is non-conductive until the pulldown path pulls the output signal low. A maximum drive current of the pulldown path is greater than a maximum drive current of the keeper path.

Abstract: A power module includes: a drive circuit for driving an IGBT of a semiconductor element; a protection circuit for performing operation for protection of the IGBT if the collector current of the IGBT has reached a trip level; and a control power source voltage detection circuit for detecting a control power source voltage to be supplied to the drive circuit. The protection circuit changes a sense resistor from a resistor to a series circuit with resistors and if the control power source voltage drops to a level lower than a predetermined value, thereby lowering the trip level.

Abstract: A semiconductor device (11) having a switching function of being turned on or off according to a voltage (Vge) of a driving signal supplied to a gate thereof is driven by generating a feedback voltage (VFE) based on a time change (dI/dt) of a collector current (Ic) of the semiconductor device (11) and applying the feedback voltage (VFE) as part of the voltage (Vge) of the driving signal when the semiconductor device (11) is switched from on to off.

Abstract: A driving circuit has output terminal connected to an ultrasonic transducer and provides an output voltage. The driving circuit includes an output transistor coupled between a voltage reference and the output terminal, a high voltage comparator coupled to said output terminal and to a threshold voltage reference), a start-up circuit controlled by a setting signal; and a switching ON/OFF circuit having an input coupled to the start-up circuit an input coupled to the comparator, and an output coupled to a control terminal of the output transistor. The start-up circuit provides an ON signal to the switching on/off circuit and the comparator provides an OFF signal to the switching on/off circuit which switches off the output transistor. The high voltage comparator generates the switching off signal in response to the output voltage reaching a desired supply voltage value which depends on the value of the first threshold voltage reference.

Abstract: A wide range level shift system receives an input signal with a first voltage level and a second voltage level. The wide range level shift system transforms the input signal to an output signal with a third voltage level and a fourth voltage level, wherein the first voltage level is smaller than the second voltage level, the second voltage level is smaller than the third voltage level, and the fourth voltage level is smaller than the first voltage level. The wide range level shift system reduces the number of transistors required, the layout area of the transistors, and the power consumption.

Abstract: A driver comprises, an input block for receiving one or more data signals and one or more control signals; a data control block for processing the data signals and the control signals to determine one or more modified control signals, wherein the modified control signal is determined as a function of one or more de-emphasis signals, one or more pre-emphasis signals, and the control signals; and a driver block for receiving the modified control signals and generating one or more output data signals.

Abstract: The transistor suffers the variation caused in threshold voltage or mobility due to gathering of the factors of the variation in gate insulator film resulting from a difference in manufacture process or substrate used and of the variation in channel-region crystal state. The present invention provides an electric circuit having an arrangement such that both electrodes of a capacitance element can hold a gate-to-source voltage of a particular transistor. The invention provides an electric circuit having a function capable of setting a potential difference at between the both electrodes of the capacitance element by the use of a constant-current source.

Abstract: A switching apparatus, as may be configured to actuate stacked MEMS switches, may include a switching circuitry (34) including a MEMS switch (36) having a beam (16) made up of a first movable actuator (17) and a second movable actuator (19) electrically connected by a common connector (20) and arranged to selectively establish an electrical current path through the first and second movable actuators in response to a gate control signal applied to the gates of the switch to actuate the movable actuators. The apparatus may further include a gating circuitry (32) to generate the gate control signal applied to gates of the switch. The gating circuitry may include a driver channel (40) electrically coupled to the common connector and may be adapted to electrically float with respect to a varying beam voltage, and may be electrically referenced between the varying beam voltage and a local electrical ground of the gating circuitry.

Abstract: A semiconductor device is provided which has a driving circuit operable to drive a circuit that has a delay, the semiconductor device including: an auxiliary driving circuit operable to accelerate drive of the driving circuit, which receives a drive signal of the driving circuit as an input signal.

Abstract: A buffer is provided. The buffer includes a first switch and a second switch coupled in series at a first output node, a third switch and a fourth switch coupled in series at a second output node, a first current source and a second current source. The first current source is coupled with one side to the first switch and the third switch and with another side to a first supply voltage, the second current source is coupled with one side to the second switch and the fourth switch and with a second side to a second supply voltage. The first current source is configured to adjust an output swing in a first operation mode and in a second operation. The second current source is configured to adjust a common mode voltage level of the output signal in the first operation mode and to provide maximum series resistance in the second operation mode.

Abstract: Provided is a semiconductor integrated circuit according to an exemplary aspect of the present invention including a data transmitting circuit that transmits data in parallel through a plurality of signal lines and a data receiving circuit that receives the data. The data transmitting circuit includes a plurality of data output circuits that output the data in a data transmission mode or set an output to a high impedance state in a HiZ mode, a plurality of data selection circuits that select one of the data and fixed data and output the selected data to the data output circuits, and a control circuit that controls the data output circuits to output the fixed data during a period between a time when a mode is switched from the HiZ mode to the data transmission mode and a time when the data output circuits start to output the data.

Abstract: A control voltage generating circuit according to an aspect of the present invention includes: a reference voltage unit that includes a plurality of first transistors of the same conductivity type connected in series between a first power supply and a second power supply, and generates a drain voltage of one of the plurality of first transistor as a reference voltage; and a voltage conversion unit that includes a plurality of second transistors connected in series between the first power supply and the second power supply and having the same conductivity type as that of the reference voltage, supplies the reference voltage to a gate of one of the plurality of second transistors, and outputs a drain voltage of one of the plurality of second transistors as a control voltage.

Abstract: An electrical waveform generating circuit has a programmable current source-driver. A digital switched current source is coupled to the programmable current source-driver and controlled by waveforms stored in the programmable current source-driver. A plurality of MOSFETs is coupled to the programmable current source driver. A first coupled inductor is connected to the plurality of high voltage MOSFETs. A transducer is coupled to the first coupled inductor.

Abstract: A transmission channel configured to transmit high-voltage pulses and to receive echoes of the high-voltage pulses includes a high voltage buffer, a voltage clamp and a switch. The voltage clamp may include clamping transistors and switching off transistors coupled together in series with body diodes in anti-series. The transmission channel may include a reset circuit configured to bias the transmission channel between pulses. The switch may include a bootstrap circuit.

Abstract: System and method are provided for driving a transistor. The system includes a floating-voltage generator, a first driving circuit, and a second driving circuit. The floating-voltage generator is configured to receive a first bias voltage and generate a floating voltage, the floating-voltage generator being further configured to change the floating voltage if the first bias voltage changes and to maintain the floating voltage to be lower than the first bias voltage by a first predetermined value in magnitude. The first driving circuit is configured to receive an input signal, the first bias voltage and the floating voltage. The second driving circuit is configured to receive the input signal, a second bias voltage and a third bias voltage, the first driving circuit and the second driving circuit being configured to generate an output signal to drive a transistor.

Abstract: An output buffer includes a pullup driver, a pulldown driver, and an output stage. The pullup driver has a drive control input, and an output for providing a pullup drive signal in a push-pull mode in response to receiving a first drive control signal on the drive control input, and in a current limited mode in response to receiving a second drive control signal on said drive control input. The pulldown driver has a drive control input, and an output for providing a pulldown drive signal in the push-pull mode in response to receiving a third drive control signal on the drive control input, and in the current limited mode in response to receiving a fourth drive control signal on the drive control input. The output stage provides a voltage on an output terminal in response to the pullup and pulldown drive signals.

Abstract: A semiconductor device arrangement and a method. One embodiment includes at least one power transistor and at least one gate resistor located between a gate of the power transistor and a connecting point in the drive circuit of the power transistor. The semiconductor device arrangement includes a switchable element between the connecting point and a source of the power transistor.

Abstract: An integrated circuit includes an output buffer and a control circuit. The output buffer has a signal input, a signal output, and a set of control inputs. The output buffer has an output buffer delay, and a driving strength adjustable in response to control signals applied to the set of control inputs. The control circuit is connected to the set of control inputs of the output buffer. The control circuit uses first and second timing signals to generate the control signals, and includes a reference delay circuit that generates the first timing signal with a reference delay, and a delay emulation circuit that generates the second timing signal with an emulation delay that correlates with the output buffer delay.