Abstract: A wideband differential signal probe includes separate paths to convert a lower frequency component and a higher frequency component of a differential signal to a lower frequency single ended signal and a higher frequency single ended signal which are combined for the probe's output which is commonly input to instrumentation.

Abstract: A memory system includes a sense amplifier for detecting content of data memory cells by comparison with a voltage stored in a reference cell. The sense amplifier may comprise a comparator, first and second load circuits, and a low impedance circuit. A first input of the comparator is coupled to the low impedance circuit and a reference voltage node. A second input of the comparator is coupled to a data voltage node. The first load circuit loads a reference cell coupled to the reference voltage node. The second load circuit loads a data cell coupled to the data voltage node.

Abstract: The embodiments of the invention provide an apparatus, method, etc. for an efficient circuit and method to measure resistance. A sense line driver for an integrated circuit memory is provided, including a sense node that receives an experiment signal from an experiment structure. An output device is connected to the sense node, wherein the output device amplifies the experiment signal. Further, a voltage divider is connected to the sense node, wherein the voltage divider includes a first device and a second device. A sensing range is controlled by an operating width/resistance range and/or an adjust signal of the second device. The adjust signal changes a gate to source voltage of the second device and holds a constant voltage over multiple sensing instances. The sensing range is different for each of the sensing instances due to a change in the operating width of the second device.

Abstract: There is provided a current detection circuit capable of preventing an excessive voltage from being applied to an input terminal of a differential amplifier, without resulting in reduction in current detection accuracy. The current detection circuit includes a power MOSFET 1 (a first semiconductor switching device), a sense MOSFET 2 (a second semiconductor switching device), a differential amplifier 3, a Zener diode 33 (a first voltage clamp device), a Zener diode 34 (a second voltage clamp device), an MOSFET 6 (a variable resistance device), a depletion type MOSFET 31 (a first MOSFET), and a depletion type MOSFET 32 (a second MOSFET).

Abstract: In some examples, a differential comparator includes a differential amplifier configured to output differential output signals, a first switch portion configured to input the differential output signals from the differential amplifier and output the differential output signals from output terminals while alternatively changing over the output terminals, a latch portion configured to update and latch the differential output signals from the output terminals of the first switch portion, and a second switch portion configured to input output signals from the latch portion and output the latched output signals. The first switch portion and the second switch portion are changed over complementarily so that the differential output signals from the differential amplifier are always outputted from the same first and second output terminals of the second switch portion respectively.

Abstract: A radio frequency (RF) receiver device comprises a receiver system that receives an analog radio frequency signal and downconverts the analog radio frequency signal to a downconverted analog signal, the receiver system further including a peak signal detector configured to determine a peak signal level of the downconverted analog signal, and an automatic gain control adjustment element configured to determine whether the peak signal level falls within a predetermined range, and configured to generate, in the RF receiver, a gain control signal controlling the gain of at least one analog component based on whether the peak signal level falls within the predetermined range.

Abstract: A differential signal transmitter including a driver circuit that generates a differential signal in response to data input. The amplitude of the voltage swings in the differential circuit is controlled by an electrical bias. Two data inputs, one being the original Data and the other being Data bar, are connected to the transistors and cause the required signal swings. The transmitter further includes a control circuit with an input for a single-bit control line for adjusting the bias to produce different swing amplitudes according to a control indicator inputted from the control line. The control circuit inputs one or more current sources and outputs the sum of one or more of the current sources according to the control indicator and the outputted current is used as the electrical bias.

Abstract: A comparator comprises a differential amplifier (T1, T2, T8, T9) having differential inputs (IN1, IN2) forming the comparator inputs, and a first and a second amplifier output (f1, f2) forming the comparator outputs of a first comparator stage, wherein the differential amplifier has first (T1, T8) and second (T2, T9) parallel branches. The comparator has a first current source circuit (32) defines a current to be driven through the differential amplifier, a second current source circuit (34) comprising a load driven by the first branch and a third current source circuit (36), comprising a load driven by the second branch. Circuitry (T6,T7) is provided for defining the voltage difference between the first and second amplifier outputs when the differential amplifier is in a stable state providing a differential output. This arrangement drives current through the two branches independently, so that the main transistors in each branch can be kept on to enable rapid response times.

Abstract: Systems and methods provide multi-use input/output (I/O) pads for an integrated circuit. For example in accordance with an embodiment, the multi-use pads may be shared to support different integrated circuit functions via the pads, such as selectively for high-speed signaling or general I/O.

Abstract: A data amplifying circuit for a semiconductor integrated circuit including a controller configured to generate a control signal for adjusting an amplification step in response to a test signal, and a data amplifier configured to amplify an input signal one time or two or more times in response to the control signal and to output an output signal.

Abstract: A delayed peak detector detects a peak level of an input signal IN at timing lagged behind a peak detector, and a peak difference detector detects a peak difference PLD between a delayed peak level DPL and a peak level PL. A reset portion outputs a reset signal BRS for a bottom detector when a level difference between the peak level PL and a bottom level BL exceeds a predetermined value comparable with the amplitude of the input signal IN and the peak difference PLD exceeds an allowable peak difference PLM. It is thus possible to replace the bottom level BL outputted from the bottom detector with a bottom level based on a latest input signal IN.

Abstract: A self-biasing slicer includes a self-biased differential transistor pair. As a result of the self-biasing, the slicer may receive input signals without the use of AC coupling. That is, a differential input signal may be fed directly to the inputs of the differential transistor pair. The differential pair circuit may incorporate a self-biased load and a self-biased current source. The slicer also may include a matched output stage with inverters that provide a rail-to-rail output. Here, the inverters may incorporate components that are matched with components of the differential pair.

Abstract: The present invention discloses a bias circuit for a sense amplifier having a device under sensing, the device under sensing having an un-programmed state and a programmed state, the bias circuit comprises at least one first branch having at least one first device formed substantially the same as the device under sensing and remaining in the un-programmed state, and at least one second device formed also substantially the same as the device under sensing and being in the programmed state, wherein the at least one first device and the at least one second device are serially connected. A typical application of the present invention is an electrical fuse memory.

Abstract: A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.

Abstract: A circuit containing a parallel connection of a first sub-circuit and a second sub-circuit is provided. The first sub-circuit comprises a serial connection of a first field effect transistor having a first threshold voltage and a first voltage dividing device. The second sub-circuit comprises a serial connection of a second field effect transistor having a second threshold voltage, which is different from the first threshold voltage, and a second voltage dividing device. The voltage between the first field effect transistor and the first voltage dividing device is compared with the voltage between the second field effect transistor and the second voltage dividing device so that a signal may be generated at a temperature at which the ratio of a performance parameter such as on-current between the first and second field effect transistors crosses over a predefined value. The signal may be advantageously employed to actively control circuit characteristics.

Abstract: A receiver of a high speed digital interface includes at least one differential amplifier, a pair of resistive elements, a current source and a pair of transistors. The differential amplifier receives a small differential signal at a pair of input terminals and outputs an amplified differential signal. Each of the resistive elements has one end coupled to one of the input terminals of the differential amplifier and the other end receiving a reference voltage. The pair of transistors has drains respectively coupled to the input terminals of the differential amplifier, sources commonly coupled to the current source and gates receiving a differential feedback signal derived from the amplified differential signal.

Abstract: A power generation system including a RF power generator which provides a RF output power. The power distribution system includes a phase-magnitude detector module having a dual logarithmic amplifier phase-magnitude detector. The dual logarithmic amplifier phase-magnitude detector receives current and voltage signals. The dual logarithmic amplifier phase-magnitude detector generates a phase signal that varies in accordance with the phase between the voltage signal and the current signal and a magnitude signal that varies in accordance with the magnitude between the voltage and current signals. A controller receives the phase and magnitude signal and communicates control signals to the matching network.

Abstract: A high-voltage switch circuit includes an enable control circuit, a feedback circuit, a boosting circuit, and a high voltage switch. The enable control circuit precharges an output node to a set voltage in response to an enable signal. The feedback circuit supplies a feedback voltage to an input node in response to a switch control voltage generated from the output node when the output node is precharged. The boosting circuit boosts the feedback voltage and outputs a boosting voltage to the output node, in response to clock signals, thereby increasing the switch control voltage. The high voltage switch is turned on or off in response to the switch control voltage, and is turned on to receive a high voltage and output the received high voltage. The boosting circuit includes an amplification circuit of a cross-coupled type.

Abstract: A sense amplifier circuit provides for high speed sensing with a high speed read operation, with a low capacitance and a low resolution time. The sense amplifier circuit includes a latch circuit having a first inverter circuit and a second inverter circuit cross coupled with each other. The amplifier circuit includes a first discharge device and a second discharge device operatively coupled to the first inverter circuit and the second inverter circuit respectively. The amplifier circuit further includes a first PMOS transistor operatively coupled between the first discharge device and a bit line, and a second PMOS transistor operatively coupled between the second discharge device and a complementary bit line. The amplifier circuit further includes a first NMOS transistor operatively coupled between the first discharge device and a ground voltage, a second NMOS transistor operatively coupled between the second discharge device and the ground voltage.

Abstract: The present invention provides a sense amplifier including a current sense circuit that outputs a detection voltage corresponding to an electric current intended for comparison, a current sense circuit that outputs a reference voltage corresponding to an electric current for reference, and a comparison circuit that compares the detection voltage and the reference voltage and outputs the result of comparison thereby. In the sense amplifier, the current sense circuit is operated in accordance with a chip control signal, and the current sense circuit is operated by a delay chip control signal obtained by delaying the chip control signal by a predetermined time by means of a delay circuit. Thus, since the current sense circuit outputs a predetermined reference voltage when the operation of the current sense circuit is started, the detection voltage rapidly converges on a predetermined level without performing such a feedback operation as to repeat its abrupt rise and fall.

Abstract: A data receiver of a semiconductor integrated circuit includes an amplifier that outputs an amplified signal by detecting and amplifying received data using equalization function according to feedback data, a detecting unit that detects a period when data is not received in the amplifier and outputs a detecting signal, and an equalization function control unit that stops the equalization function of the amplifier in response to the detecting signal.

Abstract: Embodiments are described for a voltage compensated sense amplifier. One such sense amplifier includes a pair of digit line nodes respectively coupled to a pair of transistors. A first pair of switches are adapted to cross-couple the gates of the transistors to the respective digit line node and a second pair of switches are adapted to couple the gates of the transistors to a voltage supply. The first and second pair of switches are coupled to respective gates of the transistors independent of the pair of transistors being respectively coupled to the digit line nodes.

Abstract: A semiconductor memory device includes an over driver for driving a pull-up power line of a bit line sense amplifier by an over driving signal, a normal driver for driving the pull-up power line of the bit line sense amplifier by a normal driving signal, and a driving signal generating circuit, in response to a write signal, for generating a driving signal to drive the over driver for a predetermined interval and thereafter to drive the normal driver.

Abstract: A current sensing circuit and a boost converter including the current sensing circuit are disclosed. The current sensing circuit includes a switching device, a sensing transistor, and a current sensing amplifier, and senses the current flowing through the switching device. The current sensing amplifier maintains a potential of an output terminal of the switching transistor substantially equal to a potential of an output terminal of the sensing transistor based on a difference between an output current of the switching device and an output current of the sensing transistor. Accordingly, the current sensing circuit accurately senses the current flowing through the switching device.

Abstract: Various embodiments of the present invention provide systems and circuits for processing information through comparison of input signals. For example, various embodiments of the present invention provide comparator circuits that include two input stages that each receive a first input and a second input. One of the input stages is sensitive to a difference between the first input and the second input for at least a low common mode, and provides a first output. The other of the input stages is sensitive to a difference between the positive input and the negative input for at least a high common mode, and provides a second output. The comparator circuits further include a regeneration stage that receives the first output and the second output, and provides a comparator output reflecting the difference between the first input and the second input.

Abstract: In one system embodiment, the system is characterized by: a differential amplifier including but not limited to at least one amplifying transistor having an emitter coupled directly to a ground. In one embodiment of a method of making a system, the method is characterized by: operably coupling at least one amplifying transistor of a differential amplifier directly to a ground. In one embodiment of a method of driving a system, the method is characterized by: driving at least one amplifying transistor of a differential amplifier with an emitter-follower feedback loop. In one system embodiment, the system is characterized by: a differential amplifier including but not limited to a first amplifying transistor having a base operably coupled with a first emitter-follower feedback loop.

Abstract: A sense-amplifying circuit amplifies a voltage difference between a first signal source and a second signal source. A first inverter has a first intermediate node from which a first output extends. A second inverter has a second intermediate node from which a second output extends. The second inverter is recursively cross-coupled with the first inverter. A first power source switch connects the first and second inverters to a first power source line. A second power source switch connects the first and the second inverters to a second power source line. A first sense-amplifying switch connects the first signal source to the first intermediate node. A second sense-amplifying switch connects the second signal source to the second intermediate node. A first pre-charge switch connects the first intermediate node to the second power source line. A second pre-charge switch connects the second intermediate node to the second power source line.

Abstract: A semi-dual reference voltage data receiving apparatus includes a first input buffer, a second input buffer, and a phase detector wherein the first input buffer includes a first input receiving unit, a first sense amplifier, and a first current offset controlling unit. The first sense amplifier senses and amplifies the voltage difference between the voltage of a first terminal of a first input transistor and the voltage of a first terminal of a second input transistor. The first current offset controlling unit controls the offset of the current that flows through the second terminal of the second input transistor.

Abstract: A duty cycle and phase placement sampling circuit that can be used for high accuracy sampling and correcting the duty cycle and placement of differential clock signals is provided. The duty cycle and phase placement sampling circuit includes dual differential input stages and re-timed precharge signals that allow for high accuracy sampling of common mode logic clock phases.

Abstract: A display panel driving circuit includes an input part for amplifying an input on-off signal so as to generate a first on-off voltage signal, a voltage signal generation part for generating a second on-off voltage signal which is varied in response to variations of the first on-off voltage signal, and an output part generating a push-pull output voltage as a driving voltage so as to drive a display panel in response to the first and second on-off voltages. The display panel driving circuit further includes a controlling part for controlling the voltage signal generation part so that a difference between on and off voltages of the second on-off voltage signal is not smaller than a predetermined voltage. Therefore, the push-pull output voltage whose response speed is well balanced when the push-pull output voltage increases and decreases can be generated without increasing electric power consumption and a circuit area.

Abstract: A data input buffer in a semiconductor is capable of avoiding operation speed deterioration of the data input buffer due to the temperature condition or process characteristic. The data input buffer in a semiconductor device includes an input detecting unit for detecting logic level of input data by comparing the voltage level of the input data with a reference voltage, a current driving capability adjusting unit for adjusting current driving capability of the input detecting unit based on at least one of temperature condition and process characteristic, and a buffering unit for buffering the output signal from the input detecting unit.

Abstract: A signal transmission system is constructed to transmit data over a signal transmission line without requiring precharging the signal transmission line for every bit, by eliminating the intersymbol interference component introduced by preceding data. The signal transmission line has a plurality of switchable signal transmission lines organized in a branching structure or a hierarchical structure, at least one target unit from which to read data is connected to each of the plurality of signal transmission lines, and a readout circuit including a circuit for eliminating the intersymbol interference component is connected to the signal transmission line, wherein the intersymbol interference component elimination circuit reduces noise introduced when the signal transmission line is switched between the plurality of signal transmission lines, and thereby provides a smooth intersymbol interference component elimination operation when the signal transmission line is switched.

Abstract: A reference current integrator and a sensed current integrator are coupled to form a differential sense amplifier. The differential sense amplifier is coupled to receive a bitline current signal from a flash memory, and the reference current integrator is coupled to receive a current signal from a reference memory cell. Integration continues until a desired voltage or time is reached, resulting in a sufficiently reliable output. The differential current integrating sense amplifier is also used for instrumentation, communication, data storage, sensing, biomedical device, and analog to digital conversion.

Abstract: A comparator circuit of the present invention includes a comparator section and a current buffer circuit. In a normal mode, a standby current outputted from the comparator section is amplified by a predetermined times at the current buffer circuit. On the other hand, the standby current is not amplified in a standby mode.

Abstract: A sense amplifier for use in a memory device and in a memory-resident system. The sense amplifier operates on a lower voltage consistent with the voltage range of the differential input data and the sense amplifier further operates on a higher voltage to level-shift the output signal concurrently with the sensing operation. The sense amplifier includes a pair of differential cross-coupled inverters whose inputs are coupled to receive the data from the memory. Once the input nodes of the cross-coupled inverters are charged, the cross-coupled inverters are further coupled to pull-up and pull-down circuits that span the higher voltage range for performing the level-shifting functionality. In order to recondition the sense amplifier for a subsequent sensing process, a clamp circuit shorts the level-shifted outputs together to prevent a higher voltage level from being inadvertently passed to the memory device when isolating pass gates are reactivated.

Abstract: Methods and apparatuses for detecting digital signals in high speed signaling systems. In at least one embodiment, at least one received input signal is combined with a plurality of predetermined reference signals according to a plurality of prior digital signal output states to generate a signal for detecting a present digital signal output state. In one aspect of the invention, a method for determining a digital signal state in a differential signaling system includes: comparing a first differential input signal to a second differential input signal; determining a prior digital signal output state; comparing the first differential input signal to one of a first reference voltage and a second reference voltage; comparing the second differential input signal to one of the first reference voltage and the second reference voltage; and determining a present digital signal output state from the prior digital signal output state and from all of the comparisons.

Abstract: A sense amplifier circuit includes a current sense amplifier, a voltage sense amplifier, and an output stabilizing circuit. The current sense amplifier amplifies differential input currents to generate differential output voltages and provides the differential output voltages to a sense amplifier output line pair. The voltage sense amplifier is coupled to the sense amplifier output line pair to amplify the differential output voltages on the sense amplifier output line pair. The voltage sense amplifier is activated at the time later than a time of activation of the current sense amplifier. The output stabilizing circuit is coupled to the sense amplifier output line pair to stabilize the differential output voltages on the sense amplifier output line pair. The output stabilizing circuit has a positive input resistance. Accordingly, the sense amplifier circuit reduces power consumption and an occupied area on a semiconductor chip.

Abstract: A sense amplifier overdriving circuit includes a first voltage driver which supplies an internal voltage from an internal voltage terminal to a sense amplifier in response to a first enabling signal, a logic unit which logically operates a block select signal for selection of a cell block and a second enabling signal enabled for a predetermined time after enabling of the first enabling signal, and outputs the resultant signal, and a second voltage driver which supplies an external voltage to the internal voltage terminal in response to the signal output from the logic unit. A semiconductor device using the sense amplifier overdriving circuit is also disclosed.

Abstract: An output buffer circuit includes: a differential circuit; and first and second load circuits coupled between the differential circuit and a high power supply voltage VDDH. Such a differential circuit includes first and second NMOS transistors having low-voltage gate dielectric layers susceptible to deterioration at operation above a maximum gate-body voltage VgbMAX (where VDDH>VgbMAX), respectively. Body electrodes & source electrodes are coupled to a common node. Gate electrodes are coupled to first and second differential input signals, respectively, such that voltages on drains of the first and second NMOS transistors represent results of a differential switching operation, respectively. More particularly, the drains of the first and second NMOS transistors are coupled to the first and second loads. The common node is coupled to a bias voltage such that Vgb of the first & second NMOS transistors is VgbMAX?Vgb.

Abstract: In an operational amplifier including first and second power supply terminals, first and second input terminals, and a first and second output terminals, a first differential amplifier circuit includes first and second MOS transistors with a common source connected to a first tail current source, first and second load resistors and a first non-doped MOS transistor connected between the first and second resistors and the second power supply terminal. A second differential amplifier circuit includes third and fourth MOS transistors with a common source connected to a second tail current source, third and fourth load resistors and a second non-doped MOS transistor connected between the third and fourth load resistors and the second power supply terminal.

Abstract: A transmission circuit, which transmits a differential signal having pulse time larger than a predetermined minimum pulse time, includes: a driving unit for feeding the differential signal as a potential difference between two transmission lines; a driven unit for operating on the basis of the differential signal by receiving the differential signal by the potential difference between the two transmission lines; and a connecting resistor for electrically connecting the two transmission lines. Further, a connecting MOS transistor may be provided near a receiving end of the driven unit.

Abstract: Sensing circuitry and a method of operating such sensing circuitry are provided. The sensing circuitry has voltage change detection circuitry for detecting a change in voltage on at least one input line and for producing at least one output signal indicative of that change during a sensing stage of operation. The voltage change detection circuitry comprises at least one latch transistor having a body region insulated from a substrate. Further, body biasing circuitry is provided which, prior to the sensing stage of operation, causes a voltage to be applied to the body region that is derived from the voltage on one of said at least one input lines. Then, during the sensing stage of operation, the body biasing circuitry causes the voltage of the body region to float. Such an arrangement enables removal of the history effect that can sometime affect such latch transistors, whilst alleviating power consumption and noise issues that can occur in certain known sensing circuits.

Abstract: In accordance with an embodiment of the present invention, a comparator system includes a plurality of multiplexers adapted to multiplex a number of differential input signals and a number of differential reference signals. A differencing circuit receives a differential input signal and a differential reference signal from the multiplexers and provides a differential output signal, which is used to provide a differential comparator output signal. A latch may be provided to perform differential-to-single ended conversion on the differential comparator output signal to provide a latch output signal. An output circuit may provide a registered digital output signal based on the latch output signal.

Abstract: A differential output circuit includes a bias circuit connected with a first voltage. An input circuit section includes first and second MOS transistors of a first conductive type, and the first and second MOS transistors are connected with the first voltage through the bias circuit, and gates of the first and second MOS transistors receive a differential input signal. Third and fourth MOS transistors of a second conductive type are connected with the first and second MOS transistors through first and second resistance elements, respectively, and connected with a second voltage. A first connection node between the first MOS transistor and the first resistance element is connected with a gate of the fourth MOS transistor, and a second connection node between the second MOS transistor and the second resistance element is connected with a gate of the third MOS transistor.

Abstract: A circuit and method for providing a sense amplifier for a DRAM memory with reduced distortion in a control signal, the sense amplifier particularly useful for embedding DRAM memory with other logic and memory functions in an integrated circuit. A sense enable circuit is provided for a differential sensing latch in a sense amplifier having a cascade coupled pair of transistors, each transistor receiving a separate control signal. The separate control signals are provided by a control circuit with a delayed overlap. Differential sensing is enabled when the delayed overlap exists between the separate control signals. An array of DRAM memory cells are coupled to a plurality of the sense amplifiers. The DRAM memory incorporating the sense amplifiers may be embedded with other circuitry in an integrated circuit. Methods for providing the control signals and for laying out the DRAM memory with the sense amplifiers are provided.

Abstract: The present invention provides a semiconductor design technology, in particular a data input buffer for use therein. This data input buffer secures a data level sensing margin in a weak data transmission cycle upon an asymmetrical data pattern transmission. Specifically, the present invention provides a technology of improving a level sensing margin in a weak data transmission cycle following after adjusting a reference level for input sensing by a constant level toward a strong data direction in a strong data transmission cycle (in case of repeating data with same polarity) by tracing a pattern of transmission data. Further, the present invention employs a method of adjusting an amount of current that flows in a data input part and a reference voltage input part to make a pull-up/pull-down of the reference level without a change of the reference voltage that is constant voltage.

Abstract: A memory system includes a sense amplifier for detecting content of data memory cells by comparison with a voltage stored in a reference cell. The sense amplifier may comprise a comparator, first and second load circuits, and a low impedance circuit. A first input of the comparator is coupled to the low impedance circuit and a reference voltage node. A second input of the comparator is coupled to a data voltage node. The first load circuit loads a reference cell coupled to the reference voltage node. The second load circuit loads a data cell coupled to the data voltage node.

Abstract: According to embodiments of the subject matter disclosed in this application, a wide input common mode sense amplifier may include a level shifter stage and an amplifier stage. The level shifter comprises a CMOS differential amplifier that has a rail-to-rail input common mode range. The level shifter accepts two input signals with a common mode voltage in a rail-to-rail range and produces two output signals with a stable common mode voltage. The differential amplifier amplifies the two output signals from the level shifter stage with high gain. The disclosed sense amplifier may be used to measure delay between two discrete time events.

Abstract: An input integrating circuit and a differential amplifier circuit are provided in a receiver circuit which samples a pair of differential input signals, detects the levels of said pair of input signals, and latches the detected levels. The above-mentioned input integrating circuit further includes: a pair of input transistors receiving the pair of input signals at respective gates thereof; a switch transistor becoming conducting in response to a sampling clock in a sampling period so as to supply a discharge current to a common source terminal of the pair of input transistors; and a precharge circuit precharging drain terminals of the pair of input transistors in a precharge period. The input integrating circuit discharges the capacitor of the drain terminals by the discharge current in the sampling period succeeding the precharge period. The differential amplifier circuit amplifies the drain terminals of the input integrating circuit.

Abstract: Box switches are stacked sharing a common current from power sources. The power sources may be current, voltage or a combination of such sources. In preferred embodiments, the transistor switches in the box switches may be paralleled by different polarity transistors that will act to better balance and make symmetrical the output signals. Capacitors may be used to smooth out residual noise voltage signals.