Abstract: Systems and methods are disclosed, including selectively providing one of a first reset or a second reset to transition to a storage system from a low power mode to an operational power mode in response to a hardware reset signal and a value of a control bit on the storage system.

Abstract: A nonvolatile memory device includes a first memory chip and a second memory chip connected to a controller through the same channel. The first memory chip generates a first signal from a first internal clock signal based on a clock signal received from the controller. The second memory chip generates a second signal from a second internal clock signal based on the clock signal, and performs a phase calibration operation on the second signal on the basis of a phase of the first signal by delaying the second internal clock signal based on a phase difference between the first and second signals.

Abstract: A dual-rail memory includes, in part, a memory array that operates using a first supply voltage, and a periphery circuit that operates using a second supply voltage. The periphery circuit includes, in part, a clock generation circuit and a comparator. The dual-rail memory also includes a level shifter that varies the voltage level of a number of signals of the memory between the first and second supply voltages. The clock generation circuit is adapted, among other operations, to generate a read clock signal in response to a read request signal. The level shifter is adapted to supply a reference wordline read signal in response to the read clock signal. The comparator is adapted to select a delay between the read clock signal and the reference wordline read signal in response to a difference between the first and second supply voltages.

Abstract: A method of operating a memory device including receiving a multilevel signal having M levels transmitted by an external controller through a clock receiving pin, where M is a natural number greater than 2, and decoding the multilevel signal to restore at least one of Data Bus Inversion (DBI) data, Data Mask (DM) data, Cyclic Redundancy Check (CRC) data, or Error Correction Code (ECC) data may be provided. The multilevel signal is a clock signal transmitted by the external controller, and is a signal swinging based on an intermediate reference signal that is an intermediate value between a minimum level and a maximum level among the M levels.

Abstract: Methods, systems, and devices for driving word lines using sub word line drivers are described. A memory array may include a plurality of sub-arrays arranged with gaps in between. Word lines may be arranged across multiple sub-arrays and drive access transistors that are used to selectively access rows (e.g., rows of memory cells) within the sub-arrays. In some examples, signals applied to selection devices driving the word lines may be over-driven for a duration at or near the desired transitions of the word line, and some signals may be driven to a relatively high level for a duration around the high and low transitions of a global row line. Whether a signal is over driven or driven to a relatively high level may depend on the type or types of transistors used in each word line driver.

Abstract: A delay control device for controlling a delay circuit includes an oscillator, a counter, and an output control circuit. The oscillator generates an internal clock signal according to an external clock signal. The counter generates an accumulative signal according to the internal clock signal. The counter is selectively reset by the external clock signal. The output control circuit generates a delay indication signal according to the accumulative signal. The delay time of the delay circuit is adjusted according to the delay indication signal.

Abstract: A memory system includes a memory chip, one or more signal lines including a first signal line, and a controller. The controller is connected to the memory chip via the one or more signal lines. The controller is configured to transmit and receive signals via the first signal line in accordance with a first standard under which voltages of communicated signals transition in a first range and with a second standard under which voltages of communicated signals transition in a second range narrower than the first range. The controller is configured to transmit a command to the memory chip via the first signal line in accordance with the first standard, and based on a response to the command from the memory chip, enable communication in accordance with the second standard.

Abstract: A clock driver circuit for low powered clock driving may include: a multiple phase divider; a buffer supplying at least one of multiple phases to the multiple phase divider at a center frequency that is an integer multiple of an input frequency; and wherein the multiple phase divider and the buffer share a same current from a supply rail.

Abstract: A memory system includes a memory device and a controller. The controller is coupled to the memory device through input/output (I/O) lines. The controller includes an interface component and a dummy power consumption component. The interface component performs a signal training operation for adjusting a timing of a clock signal, to which test data is synchronized. The dummy power consumption component performs a dummy power consumption operation while the signal training operation is performed.

Abstract: Methods, systems, and devices for voltage adjustment based on, for example, pending refresh operations are described. A memory device may periodically perform refresh operations to refresh volatile memory cells and may at times postpone performing one or more refresh operations. A memory device may determine a quantity of pending (e.g., postponed) refresh operations, such as by determining a quantity of refresh intervals that have elapsed without receiving or executing a refresh command, among other methods. A memory device may pre-emptively adjust (or cause to be adjusted) a supply voltage associated with the memory device or memory device component based on the quantity of pending refresh operations to prepare for the current demand associated with the performing the one or more pending refresh operations. For example, the memory device may increase a supply voltage associated with one or more components to prepare for performing multiple pending refresh operations.

Abstract: A stagger signal generation circuit is provided. The stagger signal generation circuit includes: a stagger pulse generation circuit, configured to generate a first pulse signal according to a first control signal and generate a second pulse signal according to a second control signal, the first control signal and the second control signal being inverted signals, and the first pulse signal and the second pulse signal being stagger pulse signals; and a delay signal output circuit including G signal output circuits, G being an integer greater than or equal to 2. Each non-first-stage signal output circuits receives a delay output signal outputted by a respective previous-stage signal output circuit as an input signal of a current-stage signal output circuit, and a first-stage signal output circuit receives an initial input signal as an input signal of the first-stage signal output circuit.

Abstract: Provided herein is a memory device and a storage device including the same. The memory device includes an input/output circuit configured to receive a command, an address, and data from a memory controller. The memory device also includes control logic configured to control a peripheral circuit of the memory device so that an operation of storing the data in a memory cell of the memory device is performed based on the command and the address received from the input/output circuit. The input/output circuit includes a queue layer configured to temporarily store the command and the address and to output the command and the address to the control logic based on at least one of a rising edge and a falling edge of a write enable signal received by the memory device from the memory controller.

Abstract: Memories might include control logic configured to cause the memory to perform a first sense operation having an initial phase and a plurality of sensing phases on a first grouping of memory cells, pause the first sense operation upon completion of a present sensing phase in response to receiving a command to perform a second sense operation on a second grouping of memory cells while performing the present sensing phase, perform an initial phase of the second sense operation after pausing the first sense operation, and, in response to completion of the initial phase of the second sense operation, resume the first sense operation at a next subsequent sensing phase of the plurality of sensing phases and continue to a sensing phase of the second sense operation to perform the next subsequent sensing phase of the first sense operation and the sensing phase of the second sense operation concurrently.

Abstract: Apparatuses, systems, and methods for faster memory access regions. A memory array may have a first bank which has a greater access speed than a second bank. For example the first bank may have a reduced read latency compared to the second bank. The first bank may have structural differences, such as reduced word line and/or reduced global input output (GIO) line length. In some embodiments, the first and second bank may have separate bank pad data buses, and data terminals. In some embodiments, they may share the bank pads data bus, and data terminals. In some embodiments, when an access command is received for the first (faster) bank while an access command to the second (slower) bank is still processing, the access to the faster bank may interrupt the access to the slower bank.

Abstract: A semiconductor device is provided which includes: a first group including a plurality of first memory blocks; a second group including a plurality of second memory blocks; a first common source line connected to the first group; a second common source line connected to the second group; a source line voltage supplying circuit supplying a source line voltage; a first switch controlling a connection between the first common source line and the source line voltage supplying circuit; and a second switch controlling a connection between the second common source line and the source line voltage supplying circuit. When one first memory block among the plurality of first memory blocks of the first group is selected, the first switch may be turned on, and the second switch may be turned off.

Abstract: A semiconductor device has a timer unit and a processing unit. The timer unit includes a binary counter, a first converter that converts a first count value output from the binary counter to a gray code to output as first gray code data. The processing unit includes a first synchronizer that captures the first gray code data transferred from the timer unit in synchronization with the system clock signal and outputs the captured first gray code data as second gray code data, and a fault detection unit that generates a data for fault detection based on the first gray code data transferred from the timer unit and compares a second count value based on the second gray code data with a third counter value based on the data for fault detection.

Abstract: A column control circuit may include a column control signal generation circuit and a column access block signal generation circuit. The column control signal generation circuit is configured to activate an input/output strobe signal when a column access block signal is deactivated. The column control signal generation circuit is configured to deactivate the input/output strobe signal when the column access block signal is activated. The column access block signal generation circuit is configured to activate the column access block signal when gap-less read commands may be inputted. The column access block signal generation circuit may deactivate the column access block signal during a period corresponding to an N-th read command among the gap-less read commands. N is an integer that is no less than 2.

Abstract: Apparatuses and methods for signal line buffer timing control are disclosed. An example apparatus includes a plurality of signal lines including first and second control lines and further including data lines, and further includes first and second signal line buffers. The first signal line buffer includes first driver circuits configured to drive respective data signals on the data lines and to drive first and second control signals on the first and second control lines, respectively. The second signal line buffer includes second driver circuits configured to be activated to receive the data signals. The first and second control signals arrive at the second signal line buffer at different times. The second driver circuits are activated responsive a later one of active first and second control signals and are deactivated responsive to an earlier one of inactive first and second control signals.

Abstract: An oscillator circuit is provided. A first and a second cycle generating units, and a first and a second duty generating units are included. An SR latch, receiving outputs the first and second cycle generating units. In the SR latch, an output is provided to the first cycle generating unit and the third duty generating, and a contemporary output is provided to the second cycle generating unit and the second duty generating unit. A logic circuit receives the outputs of the first and the second duty generating units and the output and the contemporary output of the SR latch to generate a clock signal. The first and the second cycle generating units are respectively operated to provide the even and odd cycle times of the clock signal. The first and the second duty generating units are respectively operated to provide the even and odd duties of the clock signal.

Abstract: An electronic device includes a shifting circuit and a dock repeater. The shifting circuit is configured to generate a write shifting flag that is inactivated when a write signal for a write operation is activated. The clock repeater is configured to block generation of a read repeating dock that is used in a read operation when the write shifting flag is inactivated.

Abstract: A clock generating circuit includes a first delay line, a second delay line, a selected phase mixing circuit and, a delay control circuit. The first delay line delays, based on a delay control signal, an input clock signal to generate a first delay clock signal. The second delay line delays, based on the delay control signal, the input clock signal to generate a second delay clock signal. The selected phase mixing circuit generates, based on a first selection signal and a second selection signal, an output clock signal from at least one between the first delay clock signal and the second delay clock signal. The delay control circuit monitors duty cycles of the first delay clock signal and the second delay clock signal to generate the first selection signal and the second selection signal thereby selecting at least one between the first delay line and the second delay line.

Abstract: A memory system includes a memory controller, a first memory module including first and second groups of first memory chips, a second memory module including first and second groups of second memory chips, and a channel including a first group of signal lines suitable for coupling the memory controller with the first memory module, and a second group of signal lines suitable for coupling the memory controller with the second memory module.

Abstract: An example computing system includes: a processing system, a hardware accelerator coupled to the processing system, and a software platform executing on the processing system. The hardware accelerator includes: a programmable integrated circuit (IC) configured with an acceleration circuit having a static region and a programmable region; a memory in the programmable IC configured to store metadata describing interface circuitry in at least one of the static region and the programmable region of the acceleration circuit. The software platform includes program code executable by the processing system to read the metadata from the memory of the hardware accelerator.

Abstract: Methods, systems, and devices for programming anti-fuses are described. An apparatus may include a repair array including elements for replacing faulty elements in a memory array and may further include an array of anti-fuses for indicating which, if any, elements of the memory array are being replaced by elements within the repair array. The array of anti-fuses may indicate an address of an element of the memory array being replaced by an element within the repair array. The array of anti-fuses may indicate an enablement or disablement of the element within the repair array indicating whether the element within the repair array is enabled to replace the element of the memory array. The array of anti-fuses may include anti-fuses with lower reliability and anti-fuses with higher reliability. An anti-fuse associated with the enabling of the element within the repair array may include an anti-fuse having the higher reliability.

Abstract: An IC memory controller includes a first controller command/address (C/A) interface to transmit first and second read commands for first and second read data to a first memory C/A interface of a first bank group of memory. A second command/address (C/A) interface transmits third and fourth read commands for third and fourth read data to a second memory C/A interface of a second bank group of memory. For a first operating mode, the first and second read data are received after respective first delays following transmission of the first and second read commands and at a first serialization ratio. For a second operating mode, the first and second read data are received after respective second and third delays following transmission of the first and second read commands. The second and third delays are different from the first delays and from each other. The first and second data are received at a second serialization ratio that is different than the first serialization ratio.

Abstract: A host device and memory device perform internal write leveling of a data strobe with a write command. The memory device includes an input-output interface that receives the data strobe from the host device. The memory device also includes internal write circuitry configured to launch an internal write signal. The internal write circuitry includes an emulation loop configured to emulate circuitry in a clock path of a write clock generated from the clock and used to generate a feedback clock. The internal write circuitry includes a write delay lock loop configured to receive the write clock and the feedback clock to determine a number of cycles used for the loop, transmit the number of cycles to the host device to be used as a cycle adjust in an internal write leveling process, and complete the internal write leveling process with the host device using the cycle adjust.

Abstract: A memory circuit includes a first bank of non-volatile memory (NVM) devices, a first plurality of decoders, a first plurality of high-voltage (HV) drivers corresponding to the first plurality of decoders, and a first plurality of HV power switches. A first HV power switch is coupled to each HV driver of the first plurality of HV drivers, and each decoder is configured to generate an enable signal corresponding to a column of the first bank of NVM devices. Each HV driver is configured to output a HV activation signal to the corresponding column of the first bank of NVM devices responsive to a power signal of the first HV power switch and to the enable signal of the corresponding decoder.

Abstract: A signal detection device of the present invention includes a first control unit configured to determine whether there are inputs of a plurality of external signals connected thereto, a second control unit configured to be activated after the first control unit is activated, a first input unit connected directly to the first control unit and configured to input a first external signal, which is one type of the plurality of external signals, and a second input unit connected to the first control unit via the second control unit and configured to input a second external signal, which is another type of the plurality of external signals, and the first control unit determines whether there is an input of the first external signal before the second control unit is activated and determines whether there is an input of the second external signal after the second control unit is activated.

Abstract: A method for performing phase aware dynamic scheduling of a plurality of double data rate (DDR) commands includes determining a ratio of a frequency of DDR controller clock to a frequency of a DDR clock. The method includes determining a number of clock cycles of the DDR clock required for each DDR command of the plurality of DDR commands. The method includes, based on the ratio of the frequency of the DDR controller clock to the frequency of the DDR clock and the number of clock cycles of the DDR clock required for each DDR command, determining a sequence of the plurality of DDR commands according to a priority corresponding to the each DDR command, and transmitting the plurality of DDR commands to DDR devices over one or more clock cycles of the DDR controller clock according to the determined sequence of the plurality of DDR commands.

Abstract: An electronic device includes a first controller compliant with a first storage standard, a second controller compliant with a second storage standard, a switching unit that switches setting information between first setting information corresponding to the first storage standard and second setting information corresponding to the second storage standard, and a connection establishing unit that executes processing of establishing connection between an external storage device and one of the first controller or the second controller, the one of the first controller or the second controller compliant with the setting information set by the switching of the switching unit.

Abstract: In a non-volatile memory circuit, performance is improved by converting data between a serial format, for transfer on and off of the memory circuit, and a parallel format, for transfer to and from the memory latches used for read and writing data into the memory array of the memory circuit. The memory array is split into M+N divisions, but transferred with a degree of parallelism of M, allowing M words of data to be transferred in parallel at a fixed transfer rate while allowing for up to N bad columns in a transfer. In the write path, a column skipping mechanism is used when converting words of write data into a parallel format. In the read path, a set of (M+N) to 1 multiplexers is used to align the word of read data so that read data can be transferred at a fixed rate and without any added latency.

Abstract: Disclosed herein is an apparatus that includes a memory cell array configured to output a read data and a timing signal in response to a read command signal, an input counter configured to update an input count value in response to the timing signal, an output counter configured to update an output count value in response to the read command signal, and a data FIFO circuit having a plurality of data registers, the data FIFO circuit being configured to store the read data into one of the data registers indicated by the input count value and configured to output the read data stored in one of the data registers indicated by the output count value. The output counter is configured to maintain the output count value without updating in response to the read command signal when an active judge signal is in an inactive state.

Abstract: Memory devices may have a memory array and a delay locked loop (DLL) circuit that adjusts signals associated with operations to access of the memory array. The memory device may also include a controller that delays an access command to access the memory array by transmitting the access command through delay circuitry of the DLL circuit. This may cause the access command to be delayed by a first duration of time when output from the delay circuitry. Delay of the access command may align a data signal and the access command such that the access command and a system clock may cause latching of suitable data of the data signal.

Abstract: Embodiments of the present disclosure provide a signal verification system, including: a memory controller, a memory, and a first transmission path and a second transmission path connected between the memory controller and the memory, where the memory controller sends one or more to-be-check signals through the first transmission path, and sends a check signal through the second transmission path, where the second transmission path is a single-port channel, and the check signal is a multi-bit signal; and a comparison module, connected to an output end of a first conversion component and an output end of the second transmission path, and configured to obtain and compare an output signal of the first conversion component and an output signal of the second transmission path.

Abstract: A spatial-temporal storage method, system, and non-transitory computer readable medium, include, in a first layer, a geometric translation circuit configured to split spatial-temporal information into row keys and translate a geometry query into a range scan, and a multi-scan optimization circuit configured to compute an optimal read strategy to optimize the range scan translated by the geometric translation circuit into a series of block starting offsets and block sizes, and, in a second layer, a block grouping circuit configured to allow grouping of blocks in the second layer while preserving spatial data locality when splits of spatial-temporal information occur in the first layer.

Abstract: A system might include a first writing device and a second writing device. The first writing device might write first data to an array of memory cells in response to a first clock cycle of a clock signal. The write of the first data exceeds one clock cycle of the clock signal. The second writing device is in parallel with the first writing device. The second writing device might write second data to the array of memory cells in response to a second clock cycle of the clock signal. The second clock cycle follows the first clock cycle and the write of the second data exceeds one clock cycle of the clock signal.

Abstract: A method of hierarchical structuring a multi-level memory in a convolutional neural network, includes partitioning a memory into a plurality of sections, partitioning the plurality of sections into a plurality of stripes, utilizing input data from the plurality of stripes in a MAC array, outputting an intermediate result from the MAC array to at least one of the plurality of stripes of a result buffer, looping back the intermediate result from the at least one of the plurality of stripes of the result buffer to at least one of the plurality of stripes of an input data buffer and outputting a final result from the at least one of the plurality of stripes of the result buffer to at least one of the plurality of stripes of an output buffer.

Abstract: A processing system reduces by staging precharging of bitlines of a memory. In a static random access memory (SRAM) array, the voltage level on every bitline in the array is precharged to a reference voltage (VDD) rail voltage before a memory access. To facilitate reduction of current spikes from precharging, a precharge control unit groups entries of a RAM into a plurality of subsets, or regions, and applies a different precharge signal for precharging bitlines associated with each subset. Application of the precharge signals to the respective subsets over time results in smaller current spikes than simultaneous application of precharge signals to all of the bitlines.

Abstract: In accordance with one embodiment, a computer-implemented method is provided, comprising the act of: configuring code or hardware to cause at least part of the hardware to operate as a double data rate (DDR) memory controller and to: produce a capture clock to time a read data path, where a timing of the capture clock is based on a first clock signal of a first clock, delay the first clock signal to produce a delayed first clock signal, adjust the delay such that at least one clock edge of the delayed first clock signal is placed nearer to at least one clock edge of: at least one data strobe (DQS), or at least one signal dependent on a DQS timing, and produce a modified timing of the capture clock based on the delay of the first clock signal.

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

Abstract: An integrated circuit including: a clock generation circuit configured to generate first and second divided clock signals by dividing an external clock signal; and a command generation circuit configured to synchronize and decode an external command signal based on a divided clock signal of the first and second divided clock signals, which is synchronized with a chip select signal.

Abstract: Systems and methods are provided for controlling a wake-up operation of a memory circuit. The memory circuit may include a memory array with a plurality of memory cells, first logic circuitry, first switching circuitry, first latch circuitry, and second switching circuitry. The first logic circuitry may be configured to generate a first bit line pre-charge signal for a first memory cell of the plurality of memory cells, where the first bit line pre-charge signal is generated in response to a sleep signal. The first switching circuitry may be configured to provide power to one or more bit line of the first memory cell in response to the first bit line pre-charge signal. The first latch circuit may receive the sleep signal and the first bit line pre-charge signal and generate a delayed sleep signal.

Abstract: Methods, circuits, and systems for reading memory cells are described. The method may include: applying a first voltage with a first polarity to a plurality of the memory cells; applying a second voltage with a second polarity to one or more of said plurality of the memory cells; applying at least a third voltage with the first polarity to one or more of said plurality of the memory cells; detecting electrical responses of memory cells to the first voltage, the second voltage, and the third voltage; and determining a logic state of respective memory cells based on the electrical responses of the memory cells to the first voltage, the second voltage, and the third voltage.

Abstract: A memory controller device includes a delay line circuitry, data sampler circuits, phase detector circuits, and a control logic circuit. The delay line circuitry delays a data strobe signal to generate first to third clock signals, in which the second clock signal is for reading a data signal, and phases of the first to the third clock signals are sequentially differentiated by a predetermined value. The data sampler circuits sample the data signal according to the first to the third clock signals, in order to generate first to third signals. The phase detector circuits compare the first signal with the second signal to generate a first detection signal, and compare the third signal with the second signal to generate a second detection signal. The control logic circuit adjusts the first to the third clock signals according to the first and the second detection signals.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.

Abstract: The disclosed embodiments relate to components of a memory system that support timing-drift calibration. In specific embodiments, this memory system contains a memory device (or multiple devices) which includes a clock distribution circuit and an oscillator circuit which can generate a frequency, wherein a change in the frequency is indicative of a timing drift of the clock distribution circuit. The memory device also includes a measurement circuit which is configured to measure the frequency of the oscillator circuit.

Abstract: Embodiments of the disclosure are drawn to apparatuses, systems, and methods for lossy row access counting. Row addresses along a to address bus may be sampled. When the row address is sampled it may be compared to a plurality of stored addresses in a data storage unit. If the sampled address matches one of the stored addresses, a count value associated with that address may be updated in a first direction (such as being increased). Periodically, all of the count values may also be updated in a second direction (for example, decreased).

Abstract: A counter readout circuit includes a plurality of counter registers and an output data computing unit. The plurality of counter registers, each includes a counter which counts per clock signal cycle. The output data computing unit includes a computing unit which adds, for output, the counter value of a counter register to the total clock count from a first timing to a second timing. The counter register is selected from the plurality of counter registers. The first timing is common to all of the plurality of counter registers. The second timing is a timing of selection of the selected counter register.

Abstract: A memory system includes a nonvolatile (NV) memory device with asymmetry between intrinsic read operation delay and intrinsic write operation delay. The system can select to perform memory access operations with the NV memory device with the asymmetry, in which case write operations have a lower delay than read operations. The system can alternatively select to perform memory access operations with the NV memory device where a configured write operation delay that matches the read operation delay.

Abstract: A dynamic voltage supply circuit of a nonvolatile memory device includes a voltage amplification/output circuit and a dynamic voltage output circuit. The voltage amplification/output circuit receives a first clock signal and a second clock signal to generate a dynamic supply voltage greater than a supply voltage while the first clock signal has a “low” level. The dynamic voltage output circuit outputs the dynamic supply voltage while the first clock signal has a “low” level and outputs a ground voltage while the first clock signal has a “high” level.