Abstract: A circuit includes a serializer configured to receive a non-serialized input signal having a first bit-width and generate a plurality of serialized input signals each having a second bit-width. A memory array is configured to receive each of the plurality of serialized input signals. The memory array is further configured to generate a plurality of serialized output signals. A de-serializer is configured to receive the plurality of serialized output signals and generate a non-serialized output signal. The plurality of serialized output signals each have a bit-width equal to second bit-width and the non-serialized output signal has a bit-width equal to the first bit-width.

Abstract: A cycle control circuit may include a judgement pulse generation circuit, a detection signal generation circuit or a flag generation circuit. The judgement pulse generation circuit may be configured to set a predetermined value based on an initialization signal and a period signal, and to generate a judgment pulse. The detection signal generation circuit may be configured to generate a detection signal from a reference flag. The flag generation circuit may be configured to generate a reference flag based on a reference signal. A cycle of the reference signal may be maintained or adjusted based on the reference flag.

Abstract: A semiconductor system includes a second semiconductor device. The second semiconductor device configured to receive an external clock, first and second code signals, and input and output data. The second semiconductor device configured to adjust a delay amount depending on a combination of the first and second code signals, generate an internal clock by delaying the external clock according to the adjusted delay amount, and input and output data in synchronization with the internal clock. The second semiconductor device is adjusted in a driving force for driving the internal clock, depending on a voltage level of a node included in a path through which the internal clock is delayed.

Abstract: A package trace design technique provides at least partial cancelation of reflections. In one illustrative method of providing a high-bandwidth chip-to-chip link with a first die coupled to a second die via a first substrate trace, an intermediate trace, and a second substrate trace, the method includes: (a) determining a first propagation delay for an electrical signal to traverse the first substrate trace, the electrical signal having a predetermined symbol interval; (b) determining a second propagation delay for the electrical signal to traverse the second substrate trace; and (c) setting a length for at least one of the first and second substrate traces, the length yielding a difference between the first and second propagation delays, the difference having a magnitude equal to half the predetermined symbol interval.

Abstract: A semiconductor apparatus may include an interface circuit. The interface circuit may sense level variations of a first signal and a second signal. The interface circuit may generate first and second output signals by variably delaying the first and second signals depending on a sensing result. The interface circuit may transmit the first and second output signals to first and second signal transmission lines which are adjacent to each other.

Abstract: Methods and apparatus relate to a 1-to-2 memory interface deserializer circuit that, in a training mode, independently positions even and odd strobes in respective even and odd data windows. In an illustrative example, the deserializer circuit may receive a data signal that encodes even and odd data streams on the rising (even) and falling (odd) edges of a strobe clock signal. During a training mode, the deserializer circuit may independently determine, for example, an optimal temporal delay for each of the even strobe and the odd strobe. Adjustable delay lines dedicated to each of the even and odd strobe signals may simultaneously detect valid data window edges to permit determination of a desired delay to optimally position the strobe signals. Various embodiments may advantageously reduce jitter associated with asymmetric strobe and/or data signals to achieve a predetermined specification (e.g., timing margins) within the corresponding data windows.

Abstract: A transmission system of at least one electrical signal to be transmitted by a transmitting electronic device to at least a receiving electronic device, comprising: at least one signal line which connects the transmitting electronic device to the at least one receiving electronic device and which is suitable to transmit the respective electrical signal to be transmitted; a signal generation unit, that generates the electrical signal to be transmitted on each signal line; at least one noise compensation line; a noise compensation circuit that generates on each noise compensation line a noise compensation signal.

Abstract: A semiconductor device includes a clock gating tree comprising a first clock gating stage and a second clock gating stage. The first clock gating stage is configured to receive an activate detection signal and to activate clocking events in the second clock gating stage in response to the activate detection signal. The clocking events are not activated in the absence of the activate detection signal.

Abstract: A semiconductor device may be provided. The semiconductor device may include a period code generation circuit configured to generate a period code having a logic level combination corresponding to a first command or a second command. The semiconductor device may include a code synthesis circuit configured to add the period code to a previous synthesis code to generate a synthesis code. The semiconductor device may include a buffer control circuit configured to compare the synthesis code with a selection control code to generate a buffer inactivation signal for controlling input of a data strobe signal.

Abstract: A semiconductor device includes a delay time adjustment circuit and an address input circuit. The delay time adjustment circuit adjusts a point in time when charges are supplied to internal nodes according to a voltage level of a back-bias voltage in response to a test mode signal. The delay time adjustment circuit also delays an active signal by a first delay time varying according to amounts of charge of the internal nodes to generate a bank selection signal. The address input circuit is driven by the back-bias voltage. The address input circuit receives an address in response to the bank selection signal to generate an internal address. The address input circuit delays the address by a second delay time varying according to a voltage level of the back-bias voltage.

Abstract: A sampling circuit may include a first timing determination circuit, a second timing determination circuit, and a sampling data output circuit. The first timing determination circuit may determine a first timing of sampling data in response to a first sampling timing signal. The second timing determination circuit may determine a second timing of the sampling data in response to a second sampling timing signal. The sampling data output circuit may output the sampling data having effective data values of the data between the first timing and the second timing in response to outputs from the first and second timing determination circuits.

Abstract: A memory device and method of operation for latency control in which a source clock signal having a first frequency is divided to provide a divided clock signal having a second frequency that is less than the first frequency as an input to a delay-locked loop circuit in an initialization mode. A locking operation may be performed to align the divided clock signal and a feedback clock signal that is generated by delaying the divided clock signal through the delay-locked loop circuit. A loop delay of the delay-locked loop circuit is measured after the locking operation is completed. The latency control is performed efficiently by measuring the loop delay using the divided clock signal in the initialization mode.

Abstract: The disclosed embodiments relate to components of a memory system that support timing-drift calibration. In specific embodiments, this memory system contains a memory device (or multiple devices) which includes a clock distribution circuit and an oscillator circuit which can generate a frequency, wherein a change in the frequency is indicative of a timing drift of the clock distribution circuit. The memory device also includes a measurement circuit which is configured to measure the frequency of the oscillator circuit.

Abstract: In a phase modulation method enable signals may be sequentially generating based on a clock signal to generate a sequence of enable signals, and a signal is delayed by delay values generated from delay cells based on the sequence of enable signals and digital bit values. A phase modulator may include a first delay circuit configured to: delay a clock signal based on a first delay value to generate a first delayed clock signal, and delay a carrier signal based on the first delayed clock signal to generate a first delayed carrier signal; and a second delay circuit configured to: delay the first delayed clock signal based on a second delay value to generate a second delayed clock signal, and delay the first delayed carrier signal based on the second delayed clock signal to generate a second delayed carrier signal.

Abstract: The threads of a user mode process can access various different resources of a computing device, and such access can be serialized. To access a serialized resource, a thread acquires a lock for the resource. For each context switch in the computing device, a module of the operating system kernel checks for priority inversions, which is a situation in which a higher priority thread of the user mode process is waiting for (blocking on) a resource for which a lower priority thread has acquired a lock. In response to detecting such a priority inversion, the priority of the lower priority thread is boosted to allow the priority thread to execute and eventually release the lock that the higher priority thread is waiting for.

Abstract: A recording/reproduction apparatus comprising an output unit outputs a clock signal to each of a plurality of recording media, a communication unit transmits a write command and write data to each of the plurality of recording media to write the data in the recording medium and receives a response to the write command, that is transmitted from each of the plurality of recording media, in accordance with a timing signal obtained by delaying the clock signal, and a control unit controls the communication unit to execute relay recording of, if data is transmitted and written in a first recording medium of the plurality of recording media, continuing the write of the data by switching a transmission destination of the data from the first recording medium to a second recording medium of the plurality of recording media.

Abstract: There is disclosed a synchronous digital circuit having a system clock and for processing a data signal, wherein the digital circuit comprises a data path, a hard macro having a macro input, a logic circuit in the data path upstream of the macro input and having a first part and a second part, the second part being immediately upstream of the macro input, a set-up timing error detector having an input, wherein the input is on the data path between the first part and the second part, and a timing correction unit, wherein the data transit time across the second part is equal to or less than one half of a clock period, and wherein the timing correction unit is configured to correct, in response to the set-up timing error detector detecting a set-up timing error, the detected set-up timing error before the data reaches the macro input.

Abstract: A memory apparatus and an operating method thereof are provided. The memory apparatus includes a memory, a temperature sensor and a control circuit. The temperature sensor senses a temperature of the memory and generating a temperature sensing signal. The control circuit is coupled to the memory and the temperature sensor. The control circuit performs access operation on the memory and changes a frequency of the access operation with reference of a delay curve according to the temperature sensing signal.

Abstract: A memory controller having a data receiver to sample data at a sample timing using a strobe signal, wherein the data and the strobe signal are sent by a memory device in connection with a read operation initiated by the memory controller, and a strobe receiver to receive the strobe signal, wherein a phase of the strobe signal has a drift relative to a reference by an amount. The memory controller further having a monitoring circuit to monitor the strobe signal and determine the amount of the drift, and an adjustment circuit to update the sample timing of the data receiver based on the amount of drift determined by the monitoring signal.

Abstract: A memory circuit according to some examples may include a clock delay circuit that use a polarity of a write enable signal to determine an operation (i.e. write or read) on the memory that provides the desired clock latency to the memory. The clock delay circuit may have a low skew portion and a high skew portion. The selection of the high skew portion or low skew portion may depend on the status of the write enable line, such as a polarity or logical value.

Abstract: Provided is a selectable delay buffer for tuning a delay path in a circuit. The selectable delay buffer comprises a first delay segment configured to pass an input signal to an output terminal within a first range of time delays, a second delay segment configured to pass the input signal to the output terminal within a second range of time delays that is different from the first range, and a segment selection switch configured to selectively couple the delay segments to the output terminal based on received selection information that indicates which delay segment to couple to the output terminal.

Abstract: Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A memory device may leverage non-volatile memory properties of a ferroelectric capacitor—e.g., that a ferroelectric capacitor may remain polarized at one of two states without a voltage applied across the ferroelectric capacitor—to activate a subset of sensing components corresponding to multiple memory cells with a common word line. For example, a first and second set of memory cells with a common word line may be selected for a read operation. A first set of sensing components corresponding to the first set of memory cells may be activated for the read operation, and a second set of sensing components that correspond to the second set of memory cells may be maintained in a deactivated state.

Abstract: A control apparatus for controlling a device having a power-saving mode includes a processing unit, a reset control unit configured to control reset of the processing unit, a power control unit configured to control supply of power to the processing unit, a memory configured to store reset instructions for causing the reset control unit to perform reset of the processing unit and power control instructions for causing the power control unit to cause to stop supply of power to the processing unit, and a memory control unit configured to perform a refresh operation of the memory, and the processing unit acquires the reset instructions and the power control instructions from the memory after performing processing to restrict the memory control unit from performing the refresh operation until the processing unit acquires the reset instructions and the power control instructions from the memory.

Abstract: A control apparatus includes functional modules and an arbitration unit. Each functional module includes a memory capable of transitioning, per a control signal, between a first power state and a second power state consuming lower power than the first power state. The arbitration unit performs control to cause a power state of the memory of one of the functional modules to make a transition. Each functional module receiving a request for power state transition of the memory makes an inquiry of whether the power state of the memory can transition to another state. In response to the inquiry, the arbitration unit issues a permission for transition of the power state of the memory of one of the functional modules. The functional modules that have received the permission from the arbitration unit control the control signal input to the memory, to make the transition of the power state of the memory.

Abstract: A memory device includes a first strobe delay circuit delaying a first data strobe signal to generate a delayed first data strobe signal, a first write leveling circuit sampling a first delay clock in synchronization with the delayed first data strobe signal, a second strobe delay circuit delaying a second data strobe signal to generate a delayed second data strobe signal, a replica second strobe delay circuit delaying the first data strobe signal by a delay value obtained by replicating the second strobe delay circuit to generate a replica delayed second data strobe signal; and a second write leveling circuit sampling a second delay clock in synchronization with the delayed second data strobe signal in a first I/O mode, and sampling the second delay clock in synchronization with the replica delayed second data strobe signal in a second I/O mode.

Abstract: A memory circuit, including a memory array (such as a cross-point array), may include circuit elements that may function both as selection elements/drivers and de-selection elements/drivers. A selection/de-selection driver may be used to provide both a selection function as well as an operation function. The operation function may include providing sufficient currents and voltages for WRITE and/or READ operations in the memory array. When the de-selection path is used for providing the operation function, highly efficient cross-point implementations can be achieved. The operation function may be accomplished by circuit manipulation of a de-selection supply and/or de-selection elements.

Abstract: A semiconductor device includes a latch circuit receiving a first signal, generated in synchronization with a clock signal, from a pulse generation circuit, and generating a second signal; a first delay circuit receiving the second signal from the latch circuit, and generating a third signal by delaying the second signal; a second delay circuit receiving the third signal from the first delay circuit, and generating a fourth signal by delaying the third signal; and a logic circuit receiving the second and fourth signals from the latch and second delay circuits, respectively, and generating a word line control signal based on one of the second signal and the fourth signal. The latch circuit generates the second signal of a first level based on the first signal, and generates the second signal of a second level, which is different from the first level, based on the third signal.

Abstract: There is provided a recording apparatus. An adjustment unit executes adjustment processing for adjusting a delay amount of a timing signal. A recording control unit performs recording control for performing recording of data to a file in a storage medium using an input/output unit configured to receive data from the storage medium according to the timing signal, and changes a recording destination of data from the file to a new file in response to a data amount recorded in the file reaching a threshold or more. A control unit controls such that the adjustment processing is performed in response to a sum of the data amount recorded in the file and a first data amount that is greater than or equal to a data amount corresponding to one instance of recording using the input/output unit reaching the threshold or more.

Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. An example method includes receiving a data clock signal responsive to receiving a timing command, performing an access operation responsive to receiving an access command associated with the timing command, providing an access data clock signal based on the data clock signal, and providing an access data clock signal based on the data clock signal. The access command may be separated in time from the associated timing command by at least one clock cycle of a system clock signal. In some examples, the access command may precede the associated timing command or may follow the associated timing command. In some examples, the access command may immediately follow or precede the associated timing command.

Abstract: A semiconductor storage device includes a first bank that includes a first memory cell group and writes data into the first memory cell group upon receipt of a first command, a second bank that includes a second memory cell group and writes data into the second memory cell group upon receipt of the first command, and a delay controller that issues the first command for the first bank upon receipt of a second command, and issues the first command for the second bank after an interval of at least a first period.

Abstract: Apparatuses and methods including an interface die that interfaces with dice through memory channels are described. An example apparatus includes a first die. The first die receives a first command including first command information and second command information provided after the first command information. The first die changes an order of providing the first command information and the second command information and provides a second command to a second die, the second command including the second command information and the first command information provided after the second command information in the changed order. The first command information is related to a command function and the second command information is related to a destination of the command function.

Abstract: A system that incorporates teachings of the present disclosure may include, for example, determining, by a controller of a mobile communication device, a phase shift criteria and an amplitude shift criteria associated with a modulation being implemented by the mobile communication device. The controller can determine a group of tuning steps that satisfies the phase and amplitude shift criteria and that provides a desired tuning step for a matching network of the mobile communication device. Additional embodiments are disclosed.

Abstract: Memory device including a controller configured to cause the memory device to generate a first clock edge of a first clock signal in response to a first clock edge of a second clock signal, to generate a second, opposite, clock edge of the first clock signal immediately following the first clock edge of the first clock signal in response to a second, opposite, clock edge of the second clock signal immediately following the first clock edge of the second clock signal, and to latch data for output from the memory device in response to the second clock edge of the first clock signal.

Abstract: A semiconductor device may include a divider circuit and a detection circuit. The divider circuit may divide an external clock to generate a plurality of divided clocks. The detection circuit may generate a phase information signal and a timing information signal based on a plurality of data determination signals and the plurality of divided clocks.

Abstract: A semiconductor device includes a phase comparison circuit, an output enablement signal generation circuit, and a data input/output (I/O) circuit. The phase comparison circuit compares a phase of a clock signal with a phase of a delay locked loop (DLL) clock signal to generate a phase information signal. The output enablement signal generation circuit latches an internal command in response to a first pre-control signal and outputs the latched internal command as an output enablement signal in response to an operation clock signal and a second pre-control signal. The output enablement signal generation circuit generates the first pre-control signal according to an internal clock signal and an input clock signal. The data I/O circuit receives input data and output the received input data as output data synchronized with a strobe signal in response to the output enablement signal.

Abstract: A semiconductor device includes a clock gating tree comprising a first clock gating stage and a second clock gating stage. The first clock gating stage is configured to receive an activate detection signal and to activate clocking events in the second clock gating stage in response to the activate detection signal. The clocking events are not activated in the absence of the activate detection signal.

Abstract: An electronic circuit with protection against eavesdropping by power analysis is provided. The electronic circuit includes: a storage element for storing a set of bits; a logic unit for processing the stored set of bits and providing a next state set of bits after two or more cycles, wherein in a first cycle, some of the stored set of bits are provided to the logic unit correctly and some are replaced by random values and in a last cycle, all of the stored set of bits are provided to the logic unit correctly; and a random bit generator that generates a random bit for each bit of the stored set of bits to determine which bits of the stored set of bits are to be provided correctly and which bits are to be replaced in each cycle.

Abstract: A data latch circuit and a pulse signal generator thereof are provided. The pulse signal generator includes a first buffer, a second buffer, a pull-up switch and an output buffer. The first buffer generates a first buffering signal according to an input signal and a feedback signal. The second buffer generates a second buffering signal according to the input signal and the first buffering signal. The pull-up switch pulls up the second buffering signal according to the first buffering signal. The output buffer generates at least one output pulse signal according to the second buffering signal. The output buffer further outputs the at least one output pulse signal to the first buffer to be the feedback signal.

Abstract: Some aspects of the disclosure include a self-refresh entry sequence for a memory, such as a DRAM, that may be used to avoid a frequency mismatch between a system processor and a system memory. The self-refresh entry sequence may signal the memory to reset the frequency set point state and default to the power-up state upon a self-refresh process exit. In another aspect, a new mode register may be used to indicate that the frequency set point needs to be reset after the next self-refresh entry command. In this aspect, the processor will execute a mode register write command followed by a self-refresh entry in response to the occurrence of a crash event. Then, the memory will reset to the default frequency set point by the end of self-refresh entry execution.

Abstract: Disclosed is a storage device. The storage device includes a nonvolatile memory device that receives write data based on a data strobe signal and a data signal and outputs read data based on the data strobe signal and the data signal, and a controller that performs a training operation for training the nonvolatile memory device to align the data signal and the data strobe signal. The controller detects a left edge of a window of the data signal for the training operation. The controller determines a center of the window by using the detected left edge and unit interval length information of the data signal or determines a start point of a detection operation for detecting a right edge of the window by using the detected left edge and the unit interval length information.

Abstract: Apparatuses and methods for adjusting timing of signals are described herein. An example apparatus may include a first signal adjustment cell configured to receive a first clock signal and to adjust skew of rising or falling edges of the first clock signal based on a first control signal. The timing adjustment circuit may further include a second signal adjustment cell configured to adjust skew of rising or falling edges of a second clock signal based on a second control signal. The timing adjustment circuit may further include a differential adjustment cell configured to receive the first and second clock signals and to adjust skew of rising or falling edges of the first clock signal based on the first control signal and to adjust skew of rising or falling edges of the second clock signal based on the second control signal. The first and second clock signals may be complementary.

Abstract: The reset signals output to the lanes of a multi-lane coherent transceiver are synchronized by first synchronizing an asynchronous reset signal to a low-speed clock signal to generate and output a plurality of synchronized reset signals to the lanes. Within each lane, a synchronous reset signal is delayed to generate a number of delayed synchronous reset signals, and the logic states of the synchronous reset signal and the delayed synchronous reset signals are captured. Based on the captured logic states in each of the lanes, a lane synchronized reset signal from the delayed synchronous reset signals is selected for use across all of the lanes.

Abstract: A method of charging a battery by a charging system comprising a master charging circuit and N (N is a natural number) slave charging circuits. The method includes: sourcing a first current to a single-wired bus by the master charging circuit; absorbing (sinking) a second current from the single-wired bus by the N slave charging circuits connected to the single-wired bus; identifying a single-wired bus voltage formed on the single-wired bus at a particular time point by the master charging circuit; and identifying the number of slave charging circuits based on the single-wired bus voltage by the master charging circuit.

Abstract: A method and system for multi cycle write leveling are disclosed. At least three data patterns are written into consecutive address locations of a memory device via corresponding write operations. Subsequently, predetermined beats of data strobe signals corresponding to certain predetermined write operations are gated. Based at least on the gating of predetermined data beats, a target data pattern to be read from the memory device is determined. Subsequently, a data read operation is performed, and the data written onto a specific address location of the memory device is read there from. The data thus read from the memory device is compared with the target pattern. Based on the comparison of the data read from the memory device with the target pattern, a delay cycle between the data strobe signals and clock signal is determined, and the data strobe signal and clock signal are accordingly calibrated.

Abstract: A semiconductor memory device which is capable of high-speed operation in synchronization with external control signals is provided. The semiconductor memory device has a data input portion, a memory array, a data output portion, and a control portion. The data input portion receives command and address input data in response to the external control signals. The memory array has a plurality of memory elements. The data output portion outputs data read from the memory array in response to the external control signals. The control portion has the function of delay-compensation. During the time interval for receiving the input data, the function of delay-compensation estimates the delay time of the internal circuits, stores the estimated delay-time in a memory unit, and adjusts the output timing of the data output portion.

Abstract: A commercial album of analog audio recordings, having multiple tracks, is identified. An analog recording of the album is played to produce an analog audio input signal. The audio output signal is digitally sampled to produce digitized segments. One or more track-titles are obtained (1902) from a remote audio finger-printing service for each digitized segment to provide track-titles. For each obtained track-title, each album-title is requested (1905) upon which the obtained track-title appears, to provide candidate albums. A score is generated (1905) for each provided candidate album based on the number of obtained track-titles that appear on a provided candidate album in the correct order. An album is identified by comparing (2209) these scores.

Abstract: Disclosed herein is a memory circuit including a dummy word line driver driving a dummy word line, dummy memory cells coupled to a dummy bit line and a dummy complementary bit line, and a transmission gate coupled to the dummy word line to pass a word line signal from the dummy word line driver to an input of the dummy memory cells. A transistor is coupled to the dummy word line between the transmission gate and a pair of pass gates of a given one of the dummy memory cells closest to the transmission gate along the dummy word line. A reset signal output is coupled to the dummy complementary bit line. The transistor serves to lower a voltage on the dummy word line, and a reset signal indicating an end of a measured dummy cycle is generated at the reset signal output.

Abstract: An electronic device may include a pulse delay circuit and a logic circuit. The pulse delay circuit generates an input control pulse based on a command pulse. The logic circuit may be configured to output some input signals from a plurality of input signals as transmitted input signals based on the input control pulse while the input signals maintain a certain logic level combination. The logic circuit may be configured to perform a predetermined logical operation of the transmitted input signals according to a remaining input signal from the plurality of input signals to generate an output signal.

Abstract: Provided herein may be a semiconductor memory device. The semiconductor memory device may include a memory unit configured to store the write data. The semiconductor memory device may include an interface chip configured to receive a first timing signal and a second timing signal, and configured to detect a locking delay from the first timing signal and generate a third timing signal from the second timing signal generated by delaying the first timing signal using the detected locking delay by at least two periods.

Abstract: An environmental sensor implementing a sleep mode timer with an oscillator circuit suitable for low power applications is presented. The oscillator circuit includes a plurality of timer stages cascaded in series with each other. Each timer circuit includes a plurality of transistors and operates to output two voltages with opposite polarities, such that the polarities of the two voltages oscillate periodically based on leakage current in the plurality of transistors. Each timer circuit further includes one or more tuning transistors that operate to adjust a frequency at which the polarities of the voltages oscillate. A complementary-to-absolute temperature (“CTAT”) voltage generator is configured to receive a regulated voltage and supply a bias voltage to the one or more tuning transistors in each of the plurality of timer circuits, where the CTAT voltage generator adjusts the bias voltage linearly and inversely with changes in temperature.