Abstract: Serial input devices (e.g., pin electronics modules) are coupled to an interface via data lines, clock lines, and select lines. A first subset and a second subset of the devices are each arrayed in columns, rows, and layers. Each data line is coupled to a respective row in the first subset and a respective row in the second subset; each clock line is coupled to a respective column in the first subset and a respective column in the second subset; and each layer in each subset is coupled to a respective select line. The interface can program a device by concurrently activating one of the data lines, one of the clock lines, and one of the select lines.

Abstract: A memory access circuit includes a write data circuit and a first write switch circuit. The write data circuit is used for receiving double data rate data or single data rate data, and outputting odd term data and even term data of adjusted double data rate data or adjusted single data rate data. The first write switch circuit is used for outputting the odd term data of the adjusted double data rate data to an odd block of a memory and outputting the even term data of the adjusted double data rate data to an even block of the memory when the write data circuit receives the double data rate data, and outputting the adjusted single data rate data to the even block or the odd block of the memory when the write data circuit receives the single data rate data.

Abstract: A method of storing data into a memory array converts an input string into a first binary array with (m?1) rows and (n?1) columns. A second binary array with m rows and n columns in an encoded bit pattern is then generated from the first binary array. The second binary array in the encoded bit pattern has at most n/2 1's in each row and at most m/2 1's in each column, and the m-th row and an n-th column contain information for decoding other entries of the second binary array. The encoded bit pattern of the second binary array is then stored into corresponding memory devices of the memory array.

Abstract: A non-volatile memory (NVM) system compatible with double data rate, single data rate, or other high speed serial burst operation. The NVM system includes input and output circuits adapted to synchronously send or receive back-to-back continuous bursts of serial data at twice the frequency of any clock input. Each burst is J bits in length. The NVM system includes read and write circuits that are adapted to read or write J bits of data at a time and in parallel, for each of a multitude of parallel data paths. Data is latched such that write time is similar for each bit and is extended to the time it takes to transmit an entire burst. Consequently, the need for small and fast sensing circuits on every column of a memory array, and fast write time at twice the frequency of the fastest clock input, are relieved.

Abstract: A data loading circuit comprises a non-volatile memory configured to store non-volatile data and output a serial data signal based on the stored non-volatile data in response to a power-up operation, a deserializer configured to receive the serial data signal and output multiple data bits at intervals of a unit period based on the received serial data signal, a load controller configured to generate multiple loading selection signals that are sequentially activated one-by-one at each interval of the unit period, and a loading memory unit configured to sequentially store the data bits at each interval of the unit period in response to the loading selection signals.

Abstract: A NAND interface having a reduced pin count configuration, in which all command and address functions and operations of the NAND are provided serially on a single serial command and address pin, and data is transmitted over data pins in response to commands and addresses received on the serial command and address pin.

Abstract: In aspects of the invention, an auxiliary memory circuit includes a shift register wherein a plurality of flip-flops are cascade-connected and a plurality of inversion circuits that invert and output outputs of each D flip-flop. A main memory circuit includes a switch, which acts in accordance with a signal from the auxiliary memory circuit, and an EPROM connected in series to the switch and driven by a writing voltage. A variable resistance circuit includes a switch, which acts in accordance with a signal from the auxiliary memory circuit, and a resistor connected in series to the switch. With aspects of the invention, it is possible for terminals of the writing voltage and a writing voltage to be commonized. Also, it is possible to provide a low-cost semiconductor physical quantity sensor device that can carry out electrical trimming with the voltage when writing into the EPROM kept constant.

Abstract: A memory controlling method, a memory controller and a memory storage apparatus are provided. The method includes identifying whether a transmission mode between the memory storage apparatus and a host system belongs to a first transmission mode or a second transmission mode and grouping memory dies of the memory storage apparatus into a plurality of memory die groups. The method also includes applying a first erasing mode to erase data stored in the memory dies when the transmission mode belongs to the first transmission mode and applying a second erasing mode to erase the data stored in the memory dies when the transmission mode belongs to the second transmission mode, wherein at least a part of the memory die groups are enabled simultaneously in the first erasing mode and any two of the memory die groups are not enabled simultaneously in the second erasing mode.

Abstract: A semiconductor memory device and system are disclosed. The memory device includes a memory, a plurality of inputs, and a device identification register for storing register bits that distinguish the memory device from other possible memory devices. Circuitry for comparing identification bits in the information signal with the register bits provides positive or negative indication as to whether the identification bits match the register bits. If the indication is positive, then the memory device is configured to respond as having been selected by a controller. If the indication is negative, then the memory device is configured to respond as having not been selected by the controller. A plurality of outputs release a set of output signals towards a next device.

Abstract: A data storage system including a memory array including a plurality of memory devices programmable in greater than two states. A memory control module may control operations of the memory array, and an encoder module may encode input data for storing to the memory array. The memory array may be an m×n memory array, and the memory control module may control operations of storing data to and retrieving data from the memory array.

Abstract: A device comprises an integrated circuit having first and second domains, the first domain having a first clock boundary module; and the second domain having a second clock boundary module. The first clock boundary module comprises: a buffer, for storing data for transfer to the second domain; and a first controller operable to send a first control signal to the second clock boundary module via a first synchronizer, the first control signal indicating the presence of a packet of data in a first storage location of the buffer. One of the first and second clock boundary modules comprises a multiplexer having an input connected to an output of the buffer and an output connected to circuitry forming part of the second domain.

Abstract: A power semiconductor device includes: a first semiconductor layer; second and third semiconductor layers above and alternatively arranged along a direction parallel to an upper surface of the first semiconductor layer; and plural fourth semiconductor layers provided on some of immediately upper regions of the third semiconductor layer. An array period of the fourth semiconductor layers is larger than that of the second semiconductor layer. A thickness of part of the gate insulating film in an immediate upper region of a central portion between the fourth semiconductor layers is thicker than a thickness of part of the gate insulating film in an immediate upper region of the fourth semiconductor layers. Sheet impurity concentrations of the second and third semiconductor layers in the central portion are higher than a sheet impurity concentration of the third semiconductor layer in an immediately lower region of the fourth semiconductor layers.

Abstract: An apparatus, system, and computer-implemented method for controlling data transfer between a plurality of serial data link interfaces and a plurality of memory banks in a semiconductor memory is disclosed. In one example, a flash memory device with multiple links and memory banks, where the links are independent of the banks, is disclosed. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices. In addition, a virtual multiple link configuration is described wherein a single link is used to emulate multiple links.

Abstract: A memory module having memory components, a termination structure, an address/control signal path, a clock signal path, multiple data signal paths and multiple strobe signal paths. The strobe signal paths and data signal paths are coupled to respective memory components, and the address/control signal path and clock signal path are coupled in common to all the memory components. The address/control signal path extends along the memory components to the termination structure such that control signals propagating toward the termination structure arrive at address/control inputs of respective memory components at progressively later times corresponding to relative positions of the memory components.

Abstract: A data loading circuit comprises a non-volatile memory configured to store non-volatile data and output a serial data signal based on the stored non-volatile data in response to a power-up operation, a deserializer configured to receive the serial data signal and output multiple data bits at intervals of a unit period based on the received serial data signal, a load controller configured to generate multiple loading selection signals that are sequentially activated one-by-one at each interval of the unit period, and a loading memory unit configured to sequentially store the data bits at each interval of the unit period in response to the loading selection signals.

Abstract: A semiconductor device according to the present invention includes plural core chips CC0 to CC7 to which mutually different pieces of chip identification information LID are allocated, and an interface chip IF that controls the core chips CC0 to CC7. The interface chip IF receives address information ADD for specifying a memory cell, and supplies in common a part of the address information to the core chips CC0 to CC7 as chip selection information SEL to be compared with the chip identification information LID. With this configuration, it appears from a controller that an address space is simply enlarged. Therefore, an interface that is same as that for a conventional semiconductor memory device can be used.

Abstract: A flash storage system includes a data buffer configured to receive and store a data block having data portions. The system further includes flash storage devices having storage blocks interleaved among the flash storage devices and a controller coupled to the data buffer and the flash storage devices. The controller is configured to initiate data transfers for writing the data portions of the data block asynchronously into the storage blocks, where the data transfers for writing the data portions of the data block asynchronously into the storage blocks include reading the data portions of the data block from the data buffer serially and writing the data portions of the data block into the storage blocks in parallel.

Abstract: An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices.

Abstract: A memory has a serial interface. The serial interface is programmable to either use separate dedicated input and output pads, or to use one bidirectional pad. When one bidirectional pad is used, the interface signal count is reduced by one.

Abstract: A semiconductor memory device and system are disclosed. The memory device includes a memory, a plurality of inputs, and a device identification register for storing register bits that distinguish the memory device from other possible memory devices. Circuitry for comparing identification bits in the information signal with the register bits provides positive or negative indication as to whether the identification bits match the register bits. If the indication is positive, then the memory device is configured to respond as having been selected by a controller. If the indication is negative, then the memory device is configured to respond as having not been selected by the controller. A plurality of outputs release a set of output signals towards a next device.

Abstract: A semiconductor memory device, in which interference between adjoining cells can be reduced and an expansion of a chip area can be suppressed, comprising: a memory cell array in which plural memory cells connected to plural word lines and plural bit lines are disposed in a matrix form; sense amplifiers each of which is to be connected to each of the bit lines; a control circuit which controls voltages of the word lines and the bit lines, and programs data into the memory cells or reads data from the memory cells; wherein the plural bit lines include at least a first, a second, a third and a fourth bit lines adjoining to each other, and the sense amplifiers include at least a first and a second sense amplifiers, a first and a fourth selection transistors which are provided between the first and the fourth bit lines and the first sense amplifier, and connect the first and the fourth bit lines to the first sense amplifier; and a second and a third selection transistors which are provided between the second and t

Abstract: A data processing system includes a first semiconductor device that has a plurality of blocks each including plural data, and a second semiconductor device that has a first control circuit controlling the first semiconductor device, and the first control circuit issues a plurality of commands to communicate with the first semiconductor device in units of access units including a plurality of first definitions that define a plurality of burst lengths indicating numbers of different data, respectively, and a plurality of second definitions that define correspondences between certain elements of data among the plural data included in the blocks, respectively, and arrangement orders in the numbers of different data that constitute the burst lengths, respectively, and communicates with the first semiconductor device through the plural data in the numbers of different data according to the first and second definitions.

Abstract: A system includes a memory controller and a plurality of memory devices connected in-series that communicate with the memory controller. Each of the memory devices has multiple independent serial ports for receiving and transmitting data. The memory controller a device address (DA) or ID number for designating a device that executes a command. Data contained in the command sent by the memory controller is captured by an individual link control circuit, in response to internally generated clock with appropriate latencies. The captured data is written into a corresponding memory bank. The data stored in one of a plurality of memory banks of one memory device is read in accordance with the addresses issued by the memory controller. The read data is propagated from the memory device through the series-connected memory devices to the memory controller.

Abstract: A memory component having a first and second interface. The first interface is provided to sample address information in response to a first clock signal. The first interface includes inputs to sample at least two bits of the address information in succession during a clock cycle of the first clock signal. The second interface is provided to sample data in response to a second clock signal, having a frequency that is at least twice the frequency of the first clock signal. The second interface includes inputs to sample at least two bits of data in succession during a clock cycle of the second clock signal.

Abstract: A serial memory may have memory arranged in a plurality of memory blocks, a serial interface for receiving a read instruction and associated memory address; and a controller configured to only store a plurality of most significant bits from each memory block which are accessed in parallel before an entire address has been received through the serial interface. The controller is further configured to stream out one of the plurality of most significant bits upon full reception of the memory address while retrieving the remaining bits from memory using the entire address and stream out the remaining bits after the most significant bits have been streamed out.

Abstract: A data strobe signal output driver includes a trigger block, a predriver block, and a main driver block. The trigger block is configured to receive a first signal, a second signal, a first clock and a second clock, and to output a predrive signal based thereon. The predriver block is configured to receive the predrive signal, a driver off signal and a termination enable signal, and to output a first main drive signal and a second main drive signal based thereon. The main driver block is configured to output a data strobe signal based on the first and second main drive signals.

Abstract: A flash storage system accesses data interleaved among flash storage devices. The flash storage system receives a data block including data portions, stores the data portions in a data buffer, and initiates data transfers for asynchronously writing the data portions into storage blocks interleaved among the flash storage devices. Additionally, the flash storage system may asynchronously read data portions of a data block interleaved among the storage blocks, store the data portions in the data buffer, and access the data portions from the data buffer.

Abstract: An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices.

Abstract: A semiconductor integrated circuit includes a multi-mode control signal generating unit configured to control an activation of a up/down mat I/O switch control signal, which controls I/O switches in a up/down mat, according to a multi-test mode signal and a read/write discriminating signal, a multi-mode decoder configured to output multi-mat select signals to simultaneously activate a plurality of mats according to a multi-test mode active write signal, and a mat controller configured to enable word lines and the I/O switches according to the up/down mat I/O switch control signal and the multi-mat select signals.

Abstract: A semiconductor device includes a selection circuit and a phase detector. The selection circuit, in response to a first selection signal output from a controller, outputs as a timing signal a first clock signal output from the controller or an output signal of a PLL using the first clock signal as a first input. The phase detector generates a voltage signal indicating a phase difference between a second clock signal output from the controller and the timing signal output from the selection circuit. The semiconductor device further includes a data port, a memory core storing data, and a serializer, in response to the timing signal output from the selection circuit, serializing data output from the memory core and outputting serialized data to the controller via the data port. The controller generates the first selection signal based on at least one of the voltage signal and the serialized data.

Abstract: A memory has a serial interface. The serial interface is programmable to either use separate dedicated input and output pads, or to use one bidirectional pad. When one bidirectional pad is used, the interface signal count is reduced by one.

Abstract: A first copier acquires data and determines a plurality of recipients to deliver split data. A data splitter 308 splits data into a plurality of data blocks and a dummy data generator 315 generates dummy data. A data delivery unit 310 delivers the data blocks and dummy data to the plurality of recipients. At the same time, the data delivery unit 310 outputs restoration information including information about the recipients of the data. Based on the restoration information, a second copier collects the plurality of data blocks and the dummy data from the plurality of recipients and discards the dummy data, acquiring the plurality of data blocks. The second copier reconstructs a set of data from the plurality of data blocks.

Abstract: An integrated circuit can include an input/output (I/O) bank. The I/O bank can include a plurality of byte clock groups. Each byte clock group can include at least one phaser configured to clock circuit elements of the byte clock group at a frequency at which a source synchronous device coupled to the byte clock group communicates data.

Abstract: A synchronous data processing system includes a memory module to store data and a memory controller coupled to the memory module. The memory controller includes a clock inverter to receive an input clock signal and to transmit an inverted clock signal to the memory module. The inverted clock signal incurs a first propagation delay prior to reaching the memory module as a memory clock signal. A write data buffer is coupled to the memory module. The write data buffer transmits data to the memory module in response to the input clock signal. An asynchronous first-in-first-out (ASYNC FIFO) buffer is coupled to the memory module. The ASYNC FIFO buffer reads data from the memory module in response to a feedback signal generated by feeding back the memory clock signal to the ASYNC FIFO buffer.

Abstract: An apparatus comprising a write data buffer circuit, a memory, and a read data buffer circuit. The write data circuit may be configured to present data in a second format in response to data received in a first format. The memory may be configured to (i) receive the data in the second format and (ii) present the data in the second format. The read data buffer circuit may be configured to (i) receive data in the second format and (ii) present data in a third format. The memory may be configured to allow two reads or two writes during a single clock cycle of reference clock without encountering a data overflow condition.

Abstract: A memory interface circuit includes a plurality of data bus drivers and logic adapted to be operatively responsive to write driver mask information. If desired, the plurality of bus drivers and the logic may be implemented in separate integrated circuits. The plurality of bus drivers are adapted to be responsive to a write operation. The logic is also adapted to disable any one of the plurality of data bus drivers based on the write driver mask information during the write operation.

Abstract: A memory system having first and second memory devices and a termination component. A first signal line is coupled to the first memory device to provide first data, associated with a write command, to the first memory device, and a second signal line coupled to the second memory device to provide second data, associated with the write command, to the second memory device. A control signal path is coupled to the first and second memory devices and the termination component such that the write command propagating on the control signal path propagates past the first memory device and the second memory device before reaching the termination component. A third signal line is provided to convey a clock signal that indicates when the write command propagating on the control signal path is to be sampled by the first and second memory devices.

Abstract: A latency counter includes a counter circuit and a point-shift FIFO circuit. Latch circuits included in the point-shift FIFO circuit are divided into n groups having wired-OR outputs, and an output of a latch circuit that belongs to a group different from a current group is selected each time a count value is updated.

Abstract: A memory control method that carries out first-in first-out access control for a memory having a plurality of storage areas, including: selecting, as write positions, an address of a storage area in a storage block having at least one or more storage areas and an address of a storage area in any one of a plurality of redundant blocks that are made redundant with respect to the storage block and have at least one or more storage areas when the write positions are selected to write data to the memory; and selecting, as read positions, an address of a storage area of the storage block and an address selected by the selecting of the write position from among the addresses of a plurality of the redundant blocks when the read positions are selected to read data written by the writing of the data to the memory.

Abstract: A first transfer circuit includes pipeline circuits having different number of stages, and switch circuits that exclusively supply the pipeline circuits with first and second read data. A second transfer circuit includes pipeline circuits having different number of stages, and switch circuits that exclusively supply the pipeline circuits with third and fourth read data. Outputs of the first and second transfer circuits are sequentially output from a multiplex circuit. When a first operation mode is selected, all the pipeline circuits are activated. When a second operation mode is selected, one of the pipeline circuits in the first transfer circuit and one of the pipeline circuits in the second transfer circuit are activated, whereas the others of the pipeline circuits are inactivated.

Abstract: A processor-based system includes a processor coupled to core logic through a processor bus. This includes a dynamic random access memory (“DRAM”) memory buffer controller. The DRAM memory buffer controller is coupled through a memory bus to a plurality of a dynamic random access memory (“DRAM”) modules and a flash memory module, which are at the same hierarchical level from the processor. Each of the DRAM modules includes a memory buffer to the memory bus and to a plurality of dynamic random access memory devices. The flash memory module includes a flash memory buffer coupled to the memory bus and to at least one flash memory device. The flash memory buffer includes a DRAM-to-flash memory converter operable to convert the DRAM memory requests to flash memory requests, which are then applied to the flash memory device.

Abstract: Embodiments of systems and methods for improved first-in-first-out (FIFO), last-in-last out (LIFO) and full-cycle decoders are described herein. In the various embodiments of the system, a clock generator is operable to generate a clock signal having an active phase and an inactive phase. A set of monotonic flip-flops are operable to capture a set of incoming data addresses during the active cycle of the clock and to generate therefrom data corresponding to single bits in the addresses that have changed compared to the data addresses received by the set of monotonic flip-flops during an immediately preceding data capture cycle. A set of static flip-flops are operable to capture a set of incoming data addresses during the inactive phase of the clock cycle and to generate set output data therefrom. A decoder operable to process the set output data from the set of static flip-flops and to generate a set of old wordlines corresponding to a set of data addresses in the immediately preceding data capture cycle.

Abstract: Provided is a read circuit for a semiconductor memory device which may have a reduced circuit scale, and a semiconductor memory device. In a plurality of sense amplifiers of the read circuit of the semiconductor memory device, for serially reading data from a serial output terminal, if a number of byte selectors which may be selected to determine an address at a predetermined time before determination of the address is four, only four sense amplifiers are required in total, and hence the read circuit and the semiconductor memory device are reduced in circuit scale.

Abstract: A system includes a memory controller and a plurality of memory devices connected in-series that communicate with the memory controller. Each of the memory devices has multiple independent serial ports for receiving and transmitting data. The memory controller a device address (DA) or ID number for designating a device that executes a command. Data contained in the command sent by the memory controller is captured by an individual link control circuit, in response to internally generated clock with appropriate latencies. The captured data is written into a corresponding memory bank. The data stored in one of a plurality of memory banks of one memory device is read in accordance with the addresses issued by the memory controller. The read data is propagated from the memory device through the series-connected memory devices to the memory controller.

Abstract: An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices.

Abstract: A method for initializing a memory device is provided. The method includes a step for transmitting at least N+1 clock cycles to the memory device, wherein the N is an amount of bits of output serial data of the memory device. During a clock cycle of the at least N+1 clock cycles, a first start/stop signal is transmitted to the memory device. During another clock cycle of the at least N+1 clock cycles, a second start/stop signal is transmitted to the memory device.

Abstract: An apparatus includes a programmable device that has an interface and command ports that can each receive commands, each command requesting an information transfer through the interface. A technique relating to the device involves: selecting during field programming a number of priority definitions; configuring each of the priority definitions during field programming to specify an order of priority for a group of the command ports; and using the priority definitions in succession and, for each of the priority definitions, causing a command to be accepted from the command port of highest priority that contains a command.

Abstract: A flash storage system accesses data interleaved among flash storage devices. The flash storage system receives a data block including data portions, stores the data portions in a data buffer, and initiates data transfers for asynchronously writing the data portions into storage blocks interleaved among the flash storage devices. Additionally, the flash storage system may asynchronously read data portions of a data block interleaved among the storage blocks, store the data portions in the data buffer, and access the data portions from the data buffer.

Abstract: System and method for a four-slot asynchronous communication mechanism with increased throughput. The system may include a host system and a client device. The host may comprise a data structure with four (two pairs of) slots and first information indicating a status of read operations from the data structure by the host. The client may read the first information from the host. The client may read second information from a local memory. The second information may indicate a status of write operations to the data structure by the client. The client may determine a slot of the data structure to be written. The slot may be determined based on the first information and the second information and may be the slot which has not been written to more recently of the pair of slots which has not been read from most recently. The client may increment a value of a counter. The value of the counter may be useable to indicate which slot has been written to most recently.

Abstract: A semiconductor integrated circuit device includes a first block, a second block, and a control section. The first block includes a first fuse, a first switching configured to write data to the first fuse, a first holding portion capable of holding a first instruction, and a first instruction portion configured to turn on the first switching when a second instruction is given thereto with the first instruction. The second block includes a second fuse, a second switching configured to write data to the second fuse, a second holding portion capable of holding the first instruction, and a second instruction portion configured to turn on the second switching when the second instruction is given thereto with the first instruction. The control section issues the second instruction at a point in time when the first instruction is held in the first and second holding portions.