Abstract: A non-volatile memory device comprises an interface circuit for receiving a plurality of signals. The plurality of signals provides multiplexed address and data and command signals in a serial format. An input buffer stores a plurality of the plurality of signals received in serial format and reconstitutes the address, data and command signals, and has an output. A command circuit receives the output of the input buffer and stores the command signals therefrom. An address circuit receives the output of the input buffer and stores the address signals therefrom. A data buffer circuit receives the output of the input buffer and stores the data signals therefrom. An array of non-volatile memory cells stores data from and provides data to the data buffer in response to address signals from the address decoder. A state machine is connected to the command circuit and controls the array of non-volatile memory cells.

Abstract: A FIFO memory having an available capacity of no more than N words deep by M bits wide. A write port receives data to store in the FIFO memory, and a read port provides the data stored in the FIFO memory. X memories store the data, where each of the X memories has a size of N/X by M. Control logic receives the data from the write port, writes the data into at least one of the X memories in a serial write manner, reads the data from at least one of the X memories in a serial read manner, and provides the data to the read port. The control logic also disables power to selected ones of the X memories when they are not being written to or read from. The FIFO memory is configured to both read and write the data at a given time to a given one of the X memories.

Abstract: An apparatus, system, and computer-implemented method for controlling data transfer between a plurality of serial data link interfaces and a plurality of memory banks in a semiconductor memory is disclosed. In one example, a flash memory device with multiple links and memory banks, where the links are independent of the banks, is disclosed. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices. In addition, a virtual multiple link configuration is described wherein a single link is used to emulate multiple links.

Abstract: A memory system with a flexible serial interface and a memory accessing method thereof are provided. The memory system includes at least one of memories and a memory controller. The memory controller flexibly sets up serial link connection with each of the memories through serial ports regardless of a physical location and an order of the serial ports. The memory controller also transmits and receives memory data in a serial mode through the serial link connection.

Abstract: Aspects of the invention may include gradually decrementing or incrementing a write pointer (370) associated with a data buffer such as the FIFO buffer (310) until a reset value of the write pointer (370) is reached in response to an indication that a data buffer controlled by the gray code counter is empty. Additionally, a read pointer (380) associated with the data buffer (310) may be gradually incremented or decremented until a reset value of the read pointer (380) is reached in response to an indication that the data buffer controlled by the gray code counter is full. The data buffer may be a first-in-first-out (FIFO) buffer such as FIFO buffer 310, which may be asynchronously clocked. The data buffer may be adapted to buffer any one or a combination of video, voice and data.

Abstract: A memory device having a memory core is described. The memory device includes a clock receiver circuit, a control interface, a data interface, a delay locked loop circuit, a read pipeline circuit and a circuit to provide an internal clock signal. The clock receiver circuit receives an external clock signal. The control interface receives a command that specifies a read operation to the memory device. The data interface transfers data between the memory device and an external set of signal lines. The delay locked loop circuit, coupled to the clock receiver circuit, to generate the internal clock signal using the external clock signal. The read pipeline circuit provides read data accessed from the memory core to the data interface. The circuit provides the internal clock signal to the read pipeline circuit in response to receipt of the command that specifies the read operation.

Abstract: A FIFO memory having an available capacity of no more than N words deep by M bits wide. A write port receives data to store in the FIFO memory, and a read port provides the data stored in the FIFO memory. X memories store the data, where each of the X memories has a size of N/X by M. Control logic receives the data from the write port, writes the data into at least one of the X memories in a serial write manner, reads the data from at least one of the X memories in a serial read manner, and provides the data to the read port. The control logic also disables power to selected ones of the X memories when they are not being written to or read from. The FIFO memory is configured to both read and write the data at a given time to a given one of the X memories.

Abstract: A multi-port memory device includes a plurality of ports located at a center region of the multi-port memory device, each for performing a data communication with a corresponding external device; a plurality of banks arranged at upper and lower regions of the multi-port memory device in a row direction on the basis of the plurality of ports; and first and second global I/O data buses arranged in the row direction between the banks and the ports, each for independently performing a data transmission between the banks and the ports.

Abstract: A semiconductor memory device comprises a first exclusive-OR circuit which compares mth N-bit first data with (m+1)th N-bit second data, a majority circuit which generates flag data to invert the second data if a comparison result of the first exclusive-OR circuit indicates that the number of mismatch bits between the first data and the second data is not less than N/2, and generates flag data to noninvert the second data if the number of mismatch bits between the first data and the second data is less than N/2, a second exclusive-OR circuit which inverts or noninverts the second data based on the flag data, a shift register which stores the flag data generated by the majority circuit, and a pad to serially output both the inverted or noninverted second data and the flag data.

Abstract: A semiconductor memory device includes plural ports for transmitting an input data serial-interfaced with an external device into a global data bus, plural banks for parallel-interfacing with the plural ports through the global data bus, plural input signal transmission blocks, responsive to a mode register enable signal, for transmitting an input signal parallel-interfaced with the external device into the global data bus, and a mode register set for determining one of a data access mode and a test mode based on the input signal inputted through the global data bus.

Abstract: In one embodiment of the invention, an integrated circuit, such as an FPGA, comprises a distributed FIFO architecture that supports data transfer from an external device, such as an SDRAM, via an interface that receives a non-continuous, asynchronous strobe clock and a data lane having a plurality of bit lines from the external device. The distributed FIFO architecture comprise a FIFO for each bit line and a FIFO controller. Under control of the FIFO controller, data is written into each FIFO using a FIFO write clock based on the strobe clock, while data is read out from each FIFO using a FIFO read clock based on a local reference clock of the integrated circuit. The distributed FIFO architecture is designed to handle a range of possible phase differences between the FIFO write and read clocks to safely convert from the asynchronous, non-continuous strobe domain to a local continuous clock domain.

Abstract: A semiconductor memory that reduces the power consumption of a memory cell array without exercising control by a microprocessor. The semiconductor memory comprises a memory cell array, a switch for turning on/off power corresponding to row addresses of the memory cell array, an address control section for exercising sequence control on the basis of a write pointer (WP) generated at the time of a write signal being inputted for designating a row address to which data of a predetermined data stream is to be written and a read pointer (RP) generated at the time of a read signal being inputted for designating a row address from which the data is to be read out, and a switch signal output section for generating switch signals for controlling the switch on the basis of the WP and the RP.

Abstract: In one embodiment, an apparatus comprises a queue, write control logic coupled to the queue and operable in a write clock domain, and a first-in, first-out buffer (FIFO) coupled to the write control logic. The queue is configured to store a plurality of data items, wherein each data item has a type which is one of a plurality of types of data items that can be stored in the queue. The write control logic is configured to maintain write pointers that identify entries in the queue for each of the plurality of types. The write control logic is configured to update the write pointer corresponding to an input type for an input data item written to the queue. Additionally, the write control logic is configured to enqueue a write event in the FIFO to transport the enqueue event to a read clock domain different from the write clock domain.

Abstract: A semiconductor memory device includes mini arrays and a serial-parallel conversion circuit. The serial-parallel conversion circuit simultaneously writes two continuous data into mutually different mini arrays out of plural data that are continuously input synchronously with an internal clock, and continuously outputs two data simultaneously read from different mini arrays, synchronously with the internal clock. In testing the semiconductor memory device according to the present invention, one data is written during a period when an external clock having a cycle of an integer times cycle of the internal clock is fixed to a high level or a low level. With this arrangement, continuous data can be assigned to mutually different mini arrays.

Abstract: Methods and systems are provided that allow the method of access to one or more memory banks to be performed using serial access, or using parallel access. In serial mode, each link operates as an independent serial link. In contrast, during serial mode, the links operate in common as a parallel link. Where input and output controls are received independently for each link for serial mode, a single set of input and output controls is used in common by all of the links during parallel mode.

Abstract: This disclosure concerns a semiconductor memory device comprising memory cells; word lines connected to the gates of the memory cells; bit lines connected to the drains of the plurality of memory cells; sense amplifiers detecting data stored in the memory cells via the bit lines, the sense amplifiers writing data to the memory cells via the bit lines and latching read data or data to be written; and a plurality of transfer gates connecting or disconnecting the sense amplifiers to or from the bit lines, in a period of a serial access for continuously writing the data to the memory cells connected to an activated word line among the word lines, the transfer gates connecting the sense amplifiers to the bit lines corresponding to the sense amplifiers, respectively, after the sense amplifiers corresponding to the memory cells latch the data.

Abstract: A signal capture system and method is used to capture a data signal using a data strobe signal having a preamble of strobe signal transitions. The system includes a data latch circuit receiving the data signal. The data latch circuit is clocked by transitions of the data strobe signal to capture respective bits of data corresponding to the data signal. A decoder receives a memory command signal and generates a data start signal after a delay period from receiving the memory command signal if the command signal corresponds to a read or a write command. The receipt of read or write command signals is used by a control circuit to identify the start of valid read or write data signals. The control circuit then outputs the captured data signals responsive to the data start signal, thereby ignoring the transitions in the preamble of the data strobe signal.

Abstract: Embodiments of the present invention include a data output circuit that can read data in parallel from a plurality of latches in a pipeline circuit. Even-numbered data and odd-numbered data are simultaneously output over a single clock cycle, and are then converted into DDR data and are then serially output. By moving data in this manner, embodiments of the invention can reduce the number of necessary control signals by as much as 50% over conventional data output circuits.

Abstract: A non-volatile memory device comprises an interface circuit for receiving a plurality of signals. The plurality of signals provides multiplexed address and data and command signals in a serial format. An input buffer stores a plurality of the plurality of signals received in serial format and reconstitutes the address, data and command signals, and has an output. A command circuit receives the output of the input buffer and stores the command signals therefrom. An address circuit receives the output of the input buffer and stores the address signals therefrom. A data buffer circuit receives the output of the input buffer and stores the data signals therefrom. An array of non-volatile memory cells stores data from and provides data to the data buffer in response to address signals from the address decoder. A state machine is connected to the command circuit and controls the array of non-volatile memory cells.

Abstract: Data transfer speed is increased in a semiconductor storage device in which the core unit and the interface unit are separate chips. The device has a plurality of core chips through in which a memory cell is formed, and an interface chip in which a peripheral circuit is formed for the memory cell. The plurality of core chips through have latch circuit units through for temporarily storing data to be outputted by the memory cell, and latch circuit units through for temporarily storing data to be inputted to the memory cell, respectively, and these latch circuit units through and latch circuit units through are connected in a cascade to the interface chip. Since the plurality of latch circuit units connected in a cascade can thereby perform a pipeline operation, it becomes possible to achieve high-speed data transfer.

Abstract: An apparatus and method are provided for accessing a serial memory without knowing the required number of address bits. The apparatus comprises a pull circuit, a data out control circuit and a transition detector. The pull circuit causes the input terminal to be set to a first predetermined logic state in response to a read command being provided to the serial memory. The data out control circuit has an output terminal for providing the read command and a first predetermined number of address bits to the output terminal. The transition detector is coupled to an input terminal for detecting if the input terminal transitions from the first predetermined logic state to a second predetermined logic state in response to the first predetermined number of address bits. The transition detector will detect a transition of the input terminal when a correct number of address bits have been provided.

Abstract: Each of a plurality of redundant memories includes a plurality of memory cells and is operable to be relieved when a defective cell exists. This plurality of redundant memories can operate independently of each other. A relief processing portion is shared by this plurality of redundant memories. A test circuit inspects the plurality of redundant memories. When the test circuit determines that a defective cell exists, the test circuit outputs relief information to relieve the defective cell. The relief processing portion has a plurality of defect relief portions each having a relief information storage portion operable to store the relief information and performs the processing of relieving the plurality of redundant memories.

Abstract: Fuse data is supplied to each of a plurality of function blocks through a transfer path using shift registers. When the reliability of fuse elements is low, there is a possibility that a part of the fuse data may have an error. Further, when the transfer path of the fuse data is long, there is a possibility that a value of the fuse data may be inverted due to an influence of noises. Thus, a decoder is arranged in the transfer path of the fuse data, and encoded data is stored in the fuse elements. By performing error detection/correction in the decoder, the high reliability is assured with respect to chip operations and the like.

Abstract: A method and system is disclosed for operating a NAND memory device. The NAND memory device is operated by transmitting serial peripheral interface signals from a host to a NAND memory device, whereby the signals are communicated to a NAND memory in the NAND memory device without modifying the signals into a standard NAND memory format. Similarly, a method and system is disclosed for receiving signals from the NAND memory device without modifying the signals from a standard NAND format into a serial format. The system also incorporates error detection and correction techniques to detect and correct errors in data stored in the NAND memory device.

Abstract: In a multi-queue memory system, a plurality of read count pointers (one for each queue) are stored in a read address file, and used to generate empty flags. A read count pointer associated with a first queue is retrieved from the read address file, and it is determined whether the first queue should be available for a re-read operation. If so, the retrieved read count pointer is stored as a first read mark value. The read count pointer is incremented in response to each read operation performed from the first queue, thereby creating an adjusted read count pointer. If a re-read operation is to be performed from the first queue, the first read mark value is stored in the read address file. Otherwise, the adjusted first read count pointer is stored in the read address file. Similar operations are performed on the write side of the multi-queue memory system.

Abstract: When the input write data is a value of a value greater than the existing data of the memory array 100, the semiconductor memory device enables writing of input write data to the memory array 100. In specific terms, the increment controller 150 reads the existing data from the memory array 100, and compares it with the write data latched to the 8-bit latch register 170. When the value of the write data is a value greater than the existing data, the increment controller 150 outputs the write enable signal WEN1 to the write/read controller 140, and executes writing of the write data latched to the 8-bit latch register 170 to the memory array 100.

Abstract: A method for dynamically selecting a clock edge for recovering read data received from a slave at a master is provided that includes determining whether an internal clock signal is high when a first bit of read data is received at the master. One of a falling edge and a rising edge of the internal clock signal are selected for recovering the read data based on the determination of whether the internal clock signal is high when the first bit of read data is received at the master.

Abstract: An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices.

Abstract: A multi-port memory device having a plurality of ports performing a serial input/output (I/O) communication with external devices, and a plurality of banks performing a parallel I/O communication with the ports through a plurality of global I/O lines. The multi-port memory device includes: a write clock generating unit for generating a write clock selectively toggled only while write data are applied; a write control unit for generating a write flag signal group and a write driver enable signal in response to the write clock and a write command; a data latch unit for outputting intermediate write data by storing burst write data under the control of the write flag signal group; and a write driver for receiving the intermediate write data to write final write data in a memory cell of a corresponding bank in response to the write driver enable signal and a data mask signal group.

Abstract: Proposed is a highly reliable storage apparatus with fast access speed and low power consumption, as well as a controller and control method for controlling such a storage apparatus. This storage apparatus is equipped with a flash memory that provides a storage extent for storing data, a disk-shaped memory device with more data write cycles than the flash memory, and a cache memory with faster access speed than the flash memory. Data provided from a host system is stored in the cache memory, this data is read from the cache memory at a prescribed timing, data read from the cache memory is stored in the disk-shaped memory device, and, when a prescribed condition is satisfied, this data is read from the disk-shaped memory device, and the data read from the disk-shaped memory device is stored in the flash memory.

Abstract: A FIFO memory device (300) comprises a storage device (321) which is a non-volatile FIFO comprising a plurality of non-volatile storage elements or latches. The FIFO memory device (300) also comprises an input stage (315) which is a volatile FIFO and comprises a plurality of volatile storage elements. The input stage (315) provides a temporary store for data and thus hides the latency of the storage device (321).

Abstract: A flash memory device includes a memory cell array and a multi-buffer block which temporarily stores program data that are to be stored in the memory cell array, wherein the multi-buffer block includes a plurality of buffer circuits which store at least 2-word data, respectively. Each of the buffer circuits includes a plurality of registers which store two corresponding data bits among the at least 2-word data, respectively and scan logics corresponding to the registers, respectively, which scan a number of program data of a first word data among the at least 2-word data during a first scan interval, and which scan a number of program data of a second word data among the at least 2-word data based on the number of the program data of the first word data during a second scan interval.

Abstract: A control device is provided for controlling a buffer memory that can store n data words and is capable of being used for data transfer between a first system and a second system. The control device includes a write pointer and a read pointer. The control device also includes a write management circuit and a read management circuit. The write management circuit compares the content of the write pointer and the content of the read pointer, and authorizes or does not authorize a write operation in the memory. The read management circuit compares the content of the write pointer and the content of the read pointer, and authorizes or does not authorize a read operation in the memory.

Abstract: A memory system with serialized data transfer. The memory system includes within a memory controller and a plurality of memory devices. The memory controller receives a plurality of write data values from a host and outputs the write data values as respective serial streams of bits. Each of the memory devices receives at least one of the serial streams of bits from the memory controller and converts the serial stream of bits to a set of parallel bits for storage.

Abstract: We describe a semiconductor memory device having a precharge control circuit and an associated method for precharging the same. A semiconductor memory device having a series of circuits for writing data to memory cells includes an input and output line for transferring data to be written to each of the memory cells. A precharge control circuit is adapted to generate a precharge control signal for controlling a precharge disable state of the input and output line after application of a first write command. The disable state of the precharge control signal is maintained even after application of a second write command when performing a continuous write operation responsive to the second write command application without other commands applied subsequent to the first write command application. Avoiding precharging the input and output line in a continuous write operation, reduces current consumption.

Abstract: Proposed is a highly reliable storage apparatus with fast access speed and low power consumption, as well as a controller and control method for controlling such a storage apparatus. This storage apparatus is equipped with a flash memory that provides a storage extent for storing data, a disk-shaped memory device with more data write cycles than the flash memory, and a cache memory with faster access speed than the flash memory. Data provided from a host system is stored in the cache memory, this data is read from the cache memory at a prescribed timing, data read from the cache memory is stored in the disk-shaped memory device, and, when a prescribed condition is satisfied, this data is read from the disk-shaped memory device, and the data read from the disk-shaped memory device is stored in the flash memory.

Abstract: Provided is a semiconductor memory device having connected bit lines and a data shifting method thereof. An embodiment of the semiconductor memory device includes a plurality of memory cell blocks each including a plurality of bit lines and a plurality of word lines, a plurality of sense amplifier blocks respectively disposed between the memory cell blocks, wherein each sense amplifier block includes a plurality of sense amplifier circuits corresponding to the bit lines, and a plurality of switches. The switches connect bit lines not sharing a sense amplifier block among bit lines of adjacent memory cell blocks between which the sense amplifier block is disposed, in response to a shift signal. Therefore, in the semiconductor memory device and the data shift method thereof, it is possible to easily shift data stored in memory cells connected to an arbitrary word line to memory cells connected to another arbitrary word line.

Abstract: A memory device includes a phase change memory cell and a circuit. The circuit is for programming the memory cell to a selected one of more than two states by applying a temperature controlled set pulse to the memory cell.

Abstract: A memory device is operable in either a high mode or a low speed mode. In either mode, 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.

Abstract: A synchronization circuit for handling and synchronizing a write operation on a semiconductor memory, in which a write operation contains a plurality of write commands, comprises a controllable first FIFO and a controllable second FIFO. The first FIFIO is clocked by a WDQS signal and stores write data on the basis of one or more successive write commands. The second FIFO is clocked by an internal clock signal and stores, for a write operation, only addresses associated with valid write data of the write data stored in the first FIFO.

Abstract: A circuit provides the widest possible window for capturing data and preventing run-through in a FIFO register. The FIFO register includes two registers per I/O. Two FIFO input clocks are used, one for each FIFO register. When one FIFO clock is active, the other is automatically disabled. Initially, the circuit is reset such that one clock is active, and the other disabled. Upon receiving a valid READ command, a shift chain attached to the FICLK that is currently low begins counting the clock cycles. This eventually determines when the FICLK that is currently low can be enabled. The final enable is dependent upon the turning off the FICLK that is currently high. The FICLK that is enabled during the reset turns off a fixed delay after the falling edge of the YCLK associated with the READ command.

Abstract: A circuit for enabling reading data in an asynchronous FIFO memory of an integrated circuit is described. The circuit comprises a memory storing data in a plurality of slots having a corresponding plurality of addresses. A write address counter stores a write address count, while a read address counter stores a read address count. Finally, a backup circuit receives a read address associated with data read from a slot of the plurality of slots. According to an alternate embodiment, a most significant bit circuit is coupled to an output of the write address counter for setting the most significant bit of the write address. A method of reading data stored in an asynchronous FIFO memory of an integrated circuit is also disclosed.

Abstract: A data generator has stable duration from trigger arrival to substantial data output start. A memory provides parallel data according to a divided clock. An address counter provides the same address to the memory until a trigger signal arrives and starts increasing the address after the trigger signal. A hexadecimal counter counts a clock that is faster than the divided clock as the counted number circulates every one period of the divided clock . A trigger information latch latches the counted number of the counter when the trigger signal arrives and provides it to a MUX. The MUX selects data in a pair of the parallel data provided at first and second inputs I1 and I2 to produce rearranged parallel data bits according to the latched counted number. A parallel to serial converter receives the rearranged parallel data to convert it to serial data according to the clock.

Abstract: The invention includes a memory device with a register device to which an output of a multiplexer is connected. The input of the multiplexer is connected to a buffer store. In addition, the memory device includes a synchronization circuit having a control output connected to a control input of the multiplexer. A clock signal output of the synchronization circuit is connected to the clock input of the register device. The synchronization circuit generates and outputs a clock signal to the clock signal output derived from a time profile for a signal on a state input and from a signal on a second clock input. In this way, a data word to be stored in the register device is synchronized to a clock signal on the second clock input, so that data errors are avoided during transfer.

Abstract: A write burst stop command function is provided for a semiconductor memory device, and in particular for a memory device having a write latency, such as is common in a low power double data rate (DDR) dynamic random access memory (DRAM) device. In the memory device, when a write stop command is received, pulses that are generated for a column address strobe signal are terminated so that no further data already in the memory device is transferred into a memory array. When the write stop command is received at the beginning of a write operation prior to generation of the pulses in the column address strobe signal, a first-in first-out (FIFO) circuit is reset. The FIFO circuit is used to introduce a predetermined write latency to the write operation. The column address strobe signal is supplied to a column decoder associated with the memory array and to a data path circuit that transfers data to the memory array based on pulses in the column address strobe signal.

Abstract: A semiconductor memory array for operation in a data storage system with at least one semiconductor memory chip for the storage of user data and one memory controller for control of the at least one semiconductor memory chip includes at least one unidirectional, serial signal line bus for control and address signals connected with the memory controller, directly connecting at least one semiconductor memory chip with the memory controller and serially connecting with each other the semiconductor memory chips among each other by 1-point-to-1-point connections.

Abstract: A serial peripheral flash memory device uses a plurality of dummy input/output terminals to enable the selection of a parallel mode for devices that have a slower serial clock speed. In parallel mode, data is transmitted over the plurality of dummy input/output terminals to allow a plurality of bits to be transmitted at the same time improving the data transmission rate at the slower serial clock speed.

Abstract: A memory system includes a first memory, a second memory, a determining unit, and an accessing unit. The capacity of the second memory is different from the capacity of the first memory. The first and the second memories are virtually partitioned into a first section and a second section. The determining unit determines to which of the first and the second sections an address corresponds, the address being associated with data to be transferred. The accessing unit is coupled to the determining unit and the first and second memories for transferring the data to or from the first memory and a first portion of the second memory when the determining unit determines that the address corresponds to the first section; and for transferring the data to or from a second portion of the second memory when the determining unit determines that the address corresponds to the second section.

Abstract: Automatic fault recovery of upsets in a memory controller are provided to minimize data loss. In addition to memory control, the present invention allows for the incorporation of majority voting circuits with integrated alignment between three voted data streams. The memory array is divided into two basic components: (1) the write side (data in); and (2) the read side (data out). Each of these components has a separate memory address counter. The write counter is loaded into a holding register during a synchronization period. After determining the validity of the write cycle for fault tolerance and setting data latency for pipelining, the read counter is loaded with the write counter value. The reading of the memory array commences at the counter value that was stored in the read counter, which is the same as the original write counter value.

Abstract: Methods and systems are provided that allow the method of access to one or more memory banks to be performed using serial access, or using parallel access. In serial mode, each link operates as an independent serial link. In contrast, during serial mode, the links operate in common as a parallel link. Where input and output controls are received independently for each link for serial mode, a single set of input and output controls is used in common by all of the links during parallel mode.