Abstract: A semiconductor memory device includes a plurality of N external ports, each of which receives commands, and an internal circuit which performs at least N access operations during a minimum interval of the commands that are input into one of the external ports.

Abstract: A pseudo-synchronous temporary storage element transports data between two system blocks with different clock systems by pseudo-synchronizing the clock edges of the two clock signals. The pseudo-synchronization circuit may be an integral part of a storage element, a separate pseudo-synchronization device, or a discrete add-on circuit to an off the shelf storage element device.

Abstract: A memory device includes a number of terminals for transferring input data and output data to and from a memory array. The memory device includes an auxiliary circuit for receiving input auxiliary information associated with the input data and for generating output auxiliary information associated with the output data. The input and output auxiliary information include inverting codes, parity codes, temperature information or time delay information. The input and output auxiliary information are transferred to and from the memory device on the same terminals that the input data and the output data are transferred.

Abstract: An apparatus comprising a flag generation circuit configured to generate a full flag signal in response to (i) a read clock signal, (ii) a write clock signal and (iii) a look ahead bitwise comparison configured to detect when a read count signal and a write count signal are equal.

Abstract: When all data is stored in a memory composed of a plurality of memory banks, a data division determination section divides all the data into a plurality of data regions. The data in the regions is allocated among the plurality of memory banks, and the data is stored in one word line in each memory bank, so that all the data is arranged in the memory. A memory control section, an address conversion section, and an address generation section perform control for periodically reading a plurality of pieces of data to be simultaneously read in each region from all the data arranged in the memory, sequentially replacing or overwriting with some of the data in the adjacent region, and reading a plurality of pieces of data to be simultaneously read next.

Abstract: An integrated circuit chip includes a plurality of independent FIFO memory devices that are each configured to support all four combinations of DDR and SDR write modes and DDR and SDR read modes and collectively configured to support all four multiplexer, demultiplexer, broadcast and multi-Q operating modes.

Abstract: An apparatus for interleave includes a serial-parallel circuit which transforms a data form of an input data from serial into parallel and which outputs a plurality of parallel data, a first switch circuit which arranges order of the parallel data based on a first control signal and which outputs a plurality of first arranged data, a memory circuit which stores the first arranged data based on the first control signal and which outputs the stored first arranged data based on a second control signal, a second switch circuit which arranges order of the stored first arranged data based on the second control signal and which outputs a plurality of second arranged data, and a parallel-serial circuit which transforms a data form of the second arranged data from parallel into serial and which outputs a serial output data.

Abstract: A sense amplifier configured to amplify and output complementary input signals, comprising: a pair of first and second transistors; a pair of first and second resistor elements which are connected to at least one of source terminals and drain terminals of the first and second transistors, and pass electric current corresponding to a difference between threshold voltages of the first and second transistors; and an output terminal which is connected to a terminal different from the terminal to which the first and second resistor elements are connected, among the source terminal and the drain terminal of the first and second transistors, or which is connected to an end different from an end to which the source terminal and the drain terminal of the first and second transistors are connected, among both the ends of the first and second resistor elements.

Abstract: In one general aspect, a stream-based memory circuit is disclosed that includes physical storage elements and at least a first physical access port. A stream-based access controller is operatively connected to the physical storage elements and to the access port. The controller includes function-specific hardware logic operative to access data as streams in the physical memory in response to stream-based access commands at the access port.

Abstract: A method for controlling a semiconductor memory in which a mode register can be set in a burst mode. To set an operation mode in the burst mode, the semiconductor memory is changed first from the burst mode, through a power-down mode, to a standby mode of non-burst mode. Then the semiconductor memory is changed to a mode register set mode to set the mode register when commands are input in the same predetermined sequence that is used in the non-burst mode.

Abstract: A memory cell with at least two detectable states among which is an unprogrammed state, comprising, in series between two terminals of application of a read voltage, at least one first branch comprising: a pre-read stage comprising, in parallel, two switchable resistors having different values with a first predetermined difference; and a programming stage formed of a polysilicon programming resistor, a terminal of the programming resistor being accessible by a programming circuit capable of causing an irreversible decrease in its value.

Abstract: Integrated circuit memory devices include a memory cell array that is configured to write N data bits in parallel and a write data path that is configured to serially receive 2N data bits from an external terminal. The write data path includes 2N write data buffers that are configured to store the 2N data bits, 2N switches, and N data lines that are configured to connect at least N of the 2N switches to the memory cell array to write therein N data bits in parallel. A reduced number of local data lines and/or global data lines may be provided.

Abstract: A memory array configured to operate as a shift register includes a first column of memory cells with an input and an output and at least a second column of memory cells with an input and an output. The memory array also includes a multiplexer that is connected between the output of the first column of memory cells and the input of the second column of memory cells. The memory array can be operated as a shift register by shifting data from the first column of memory cells to the second column of memory cells through the multiplexer rather than using general routing lines.

Abstract: A multi-port memory cell includes a first SRAM element having a first pair of access transistors electrically coupled to a pair of FIFO write bit lines. A second dual-port SRAM element is also provided. This second dual-port SRAM element has a second pair of access transistors electrically coupled to a pair of FIFO read bit lines and a third pair of access transistors electrically coupled to a pair of memory read bit lines. A direct path data transfer circuit is provided. This transfer circuit is configured to support a unidirectional data transfer path that extends from first storage nodes within the first SRAM element to second storage nodes within the second dual-port SRAM element. This transfer circuit is also responsive to a direct path word line signal.

Abstract: A memory device is operable in either a high mode or a low speed mode. In either mode 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.

Abstract: The present invention discloses a pointer generator which generates pointer values for a stack (LIFO memory). The pointer generator includes a selection input terminal and a bi-direction linear feedback shift register. The selection input terminal transmits a selection signal to the bi-direction linear feedback shift register in response to a command to read/write the stack. The fundamental structure of the bi-direction linear feedback shift register is a linear feedback shift register. After receiving the selection signal from the selection input terminal, the bi-direction linear feedback shift register performs calculation of a specific primitive characteristic polynomial, and then creates a number sequence. When the selection signal changes, the bi-direction linear feedback shift register creates another number sequence by performing calculation of another specific primitive characteristic polynomial. The two number sequences are exactly opposite to each other in order.

Abstract: A memory device is operable in either a high mode or a low speed mode. In either mode 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.

Abstract: An integrated circuit memory device has a plurality of memory cells arranged in a plurality of arrays. Each array has a plurality of rows, and a plurality of column lines, and a plurality of row lines connecting to the memory cells in each array. The memory cell in an array is addressable by a column line and a row line. A column address decoder receives a column address signal and selects one or more column lines of each array in response. A row address decoder receives a row address signal and selects a row line of each array in response. The memory device also has a plurality (k) of sense amplifiers, with one sense amplifier associated with each array, connectable to one or more column lines of the array and receives a signal therefrom supplied from an addressed memory cell. The memory device further has a register; and a control circuit.

Abstract: Embodiments of the present invention provide a method and system for staging the data output from an addressable memory location as a plurality of fields. In embodiments, each field of a data item that is stored at an address may be output during a different clock cycle. In further embodiments, the most time critical field may be output first.

Abstract: An electronic device (10). The device comprises a memory structure (12) structure comprising an integer M of word storage locations. The device further comprises a shift register (SRRD; SRWT) for storing a sequence of bits. The sequence in the shift register comprises a number of bits equal to a ratio of 1/R1 times the integer M. The device further comprises circuitry (16) for providing a clock cycle to the shift register for selected data operations with respect to any of the word storage locations. The selected data operations are a data read or a data write. In response to each clock cycle, received from the circuitry for providing the clock cycle, the shift register shifts the sequence. Further, one bit in the sequence corresponds to an indication of one of the memory word storage locations from which a word will be read or into which a word will be written.

Abstract: A non-volatile memory device capable of reading and writing a large number of memory cells with multiple read/write circuits in parallel has an architecture that reduces redundancy in the multiple read/write circuits to a minimum. The multiple read/write circuits are organized into a bank of similar stacks of components. In one aspect, each stack of components has individual components factorizing out their common subcomponents that do not require parallel usage and sharing them as a common component serially. Other aspects, include serial bus communication between the different components, compact I/O enabled data latches associated with the multiple read/write circuits, and an architecture that allows reading and programming of a contiguous row of memory cells or a segment thereof. The various aspects combined to achieve high performance, high accuracy and high compactness.

Abstract: A state machine comprising a first input receiving a first read clock, a second input receiving a first write clock, a third input receiving a first programmable Almost Full look-ahead signal, a fourth input receiving a second read clock, a fifth input receiving a second write clock, and a sixth input receiving a second programmable Almost Full look-ahead signal is disclosed. The state machine manipulates the inputs to produce an output signal representing an Almost Full output flag that is at a first logic state when a FIFO is Almost Full and is at a second logic state when the FIFO is Not Almost Full.

Abstract: Methods and circuitry for implementing high speed first-in first-out (FIFO) structures. In one embodiment, a FIFO is disclosed that allows the frequency of one clock, e.g., the write clock, to be different than (e.g., half) that of the other (read) clock. In another embodiment a FIFO is presented that can be set and/or reset asynchronously. Other embodiments are disclosed wherein the read and write pointers are effectively monitored to ensure proper timing relationship, to detect loss of clock as well as to detect other abnormal FIFO conditions.

Abstract: Methods and circuitry for implementing high speed first-in first-out (FIFO) structures. In one embodiment, a FIFO is disclosed that allows the frequency of one clock, e.g., the write clock, to be different than (e.g., half) that of the other (read) clock. In another embodiment a FIFO is presented that can be set and/or reset asynchronously. Other embodiments are disclosed wherein the read and write pointers are effectively monitored to ensure proper timing relationship, to detect loss of clock as well as to detect other abnormal FIFO conditions.

Abstract: In some embodiments, a system includes a memory device in a first clock domain region and a memory device and a digital signal processing (DSP) sub-system in a second clock domain region. In addition, a plurality of asynchronous first-in first-out (FIFO) data structures, each comprising a read interface, a write interface, and one or more data slots, store data generated from the DSP sub-system. The read interface operates in the first clock domain, and the write interface operates in the second clock domain.

Abstract: A buffer memory status detection circuit has a binary logic gate (e.g. an OR gate) coupled to a comparator output signal that is asserted when a sum of a first address pointer of a FIFO memory array plus a first offset equals a second address pointer, and to a reset signal. Binary logic provides a binary output (i.e. “0” or “1”) in a first clock domain to two synchronization registers in series that convert the output to a second clock domain. An optional pipeline register improves timing of the output in the second clock domain, and is particularly desirable for use with high-speed clocks.

Abstract: A memory circuit achieves much higher bandwidth and reduced power consumption by maintaining the maximum number of memory arrays open simultaneously. Circuit area is also saved by sharing bit line sense amplifiers between adjacent arrays. When selected, an array remains open until a different row in the same array or an array adjacent to it is selected. Thus, as long as access is made to an open row of every other array, access time and power are reduced by eliminating the need to turn arrays on and off.

Abstract: A conventional semiconductor integrated circuit device suffers from the increasing difficulty in definitely setting the output state of a redundancy circuit as the number of conductor layers increases. To overcome this inconvenience, according to the present invention, a semiconductor integrated circuit device has a first semiconductor chip having a nonvolatile memory for storing redundancy information, and has a second semiconductor chip having a conversion circuit for converting the redundancy information output in the form of serial data from the nonvolatile memory into parallel data and a redundancy circuit of which the output state is definitely set by receiving the parallel data output from the conversion circuit.

Abstract: Methods and circuitry for implementing high speed first-in first-out (FIFO) structures. In one embodiment, a FIFO is disclosed that allows the frequency of one clock, e.g., the write clock, to be different than (e.g., half) that of the other (read) clock. In another embodiment a FIFO is presented that can be set and/or reset asynchronously. Other embodiments are disclosed wherein the read and write pointers are effectively monitored to ensure proper timing relationship, to detect loss of clock as well as to detect other abnormal FIFO conditions.

Abstract: An electronic device including an electronic circuit (1, 8) for delivering an output signal (CKS) and a programmable non volatile memory (30) coupled to the electronic circuit to allow storage of a binary word (EED[7:0]) representative of at least one adjustable feature (C1, C2) of the electronic circuit (1, 8), this electronic device including at least first and second supply terminals (PAD_VDD, PAD_VSS), to which first and second supply voltages are applied (VDD, VSS) and at least one output terminal (PAD_OUT) at which the output signal from the electronic circuit is delivered. Circuits are provided for switching the output terminal into a so-called high impedance state so as to allow the introduction, in serial form, via this output terminal, of data bits intended, in particular, to be stored in the non volatile memory of the device. This device is applied, in particular, for adjusting the features of an oscillator circuit.

Abstract: The invention relates to a control means for controlling burst accesses to a synchronous dynamic semiconductor memory device comprising at least two memory banks. In order to avoid relatively large time losses due to preparation cycles (precharge and activate), the invention provides an address converter unit (12) for converting a logical access address into physical access addresses by splitting the burst access into at least two partial burst accesses, wherein a first physical access address addresses a first memory area of a first memory bank for a first partial burst access and wherein a second physical access address addresses a second memory area of a second memory bank for a second partial burst access.

Abstract: Techniques for preloading data into memory blocks on a programmable circuit are provided. Memory blocks on the a programmable circuit each have dedicated circuitry that loads data into the memory block. The dedicated circuit also generates memory addresses used to load the data into the memory block. The dedicated circuitry associated with each memory block reduces demand on the routing resources. A user can preload data into the memory blocks prior to user mode. A user can also prevent data from being preloaded into one or more of the memory blocks prior to user mode. By allowing the user to program some or all of the memory blocks prior to user mode, the time needed to a program the memory blocks prior to user mode can be substantially reduced.

Abstract: A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronous read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).

Abstract: Integrated circuit memory devices include a memory cell array that is configured to output data bits in parallel at a first data rate. An output circuit is configured to serially output the data bits to an external terminal at the first data rate in a normal mode of operation, and to serially output the data bits to the external terminal at a second data rate that is lower than the first data rate in a test mode of operation. Accordingly, the memory cell array can operate at a first data rate while allowing the output circuit to output data to an external terminal at a second data rate that is lower than the first data rate, in a test mode of operation.

Abstract: A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronous read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).

Abstract: A buffer circuit includes a plurality of registers, a write register selector, a read register selector, and an address proximity detector. The write register selector operates in synchronism with a write clock signal and outputs write enable signals in a predetermined sequence for write-enabling the plurality of registers, one at a time. The read register selector operates in synchronism with a read clock signal and outputs read enable signals in the predetermined sequence for read-enabling the plurality of registers to be read, one at a time. The address proximity detector detects an event in which a difference between a register write-enabled by one of the write enable signals and a different register read-enabled by one of the read enable signals at a time in the predetermined sequence is equal to a predetermined value and outputs a reset signal upon detecting such event.

Abstract: A memory device is operable in either a high mode or a low speed mode. In either mode 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.

Abstract: A memory access scheme employing one or more sets of shift registers interconnected in series to which data may be loaded from or written into one or more memory devices. That is, data from the memory devices may be parallel loaded into the sets of shift registers and then serially shifted through the shift registers until it is output from the sets of shift registers and transferred to its destination. Additionally, the data may be read from and loaded into the memory devices to/from the sets of shift registers such that the shifting of the shift registers is uninterrupted during the reading and/or loading of data. Additionally, data from the memory devices may be loaded into two or more parallel chains of shift registers and then serially shifted through the shift register chains.

Abstract: First-in/first-out (“FIFO”) memory circuitry includes first and second Gray-code-based counters for respectively counting write and read clock signals. A Gray code subtractor subtracts from one another the counts output by the counters. Shift register circuitry shifts in successive data words in synchronism with the write clock signal. The shift register circuitry includes selection circuitry configured to select one of the data words based on a Gray code decoding of information from the subtractor. Circuitry may also be included to monitor the information from the subtractor to detect full or empty conditions of the shift register circuitry.

Abstract: A serial advanced technology attachment (SATA) storage device supports an SATA protocol that provides for high data transfer speed. The storage device is for connecting to an SATA cable, and includes at least one non-volatile semiconductor memory device for storing data therein; an SATA adapter, connected to the SATA cable, for transferring/receiving data signals to/from the SATA cable; a memory controller for controlling the non-volatile semiconductor memory device in response to data signals transferred from the SATA adapter; and an SATA device controller, connected between the SATA adapter and the memory controller, for interfacing transmitted/received data signals between the SATA adapter and the memory controller.

Abstract: A method for controlling a semiconductor memory in which mode register can be set in burst mode. To set an operation mode in burst mode, the semiconductor memory is changed first from the burst mode, through power-down mode, to standby mode of non-burst mode. Then the semiconductor memory is changed to mode register set mode to set the mode register when commands are input in the same predetermined sequence that is used in the non-burst mode.

Abstract: An integrated circuit memory includes a FLASH memory including a circuit for recording a word presented on its input without the possibility of recording simultaneously several words in parallel. The integrated circuit memory may include a buffer memory with a sufficient capacity to store a plurality of words, the output of which is coupled to the input of the FLASH memory. A circuit is also included for recording into the buffer memory a series of words to be recorded into the FLASH memory and recording into the FLASH memory the words first recorded into the buffer memory.

Abstract: Integrated circuit memory devices include a memory cell array that is configured to output data bits in parallel at a first data rate. An output circuit is configured to serially output the data bits to an external terminal at the first data rate in a normal mode of operation, and to serially output the data bits to the external terminal at a second data rate that is lower than the first data rate in a test mode of operation. Accordingly, the memory cell array can operate at a first data rate while allowing the output circuit to output data to an external terminal at a second data rate that is lower than the first data rate, in a test mode of operation.

Abstract: A magnetic memory is disclosed. In one embodiment, the magnetic memory includes first and second memory cells and a read controller coupled to the first and second memory cells. An output controller coupled to the read controller and to the first and second memory cells, wherein the output controller is configured to receive read data in parallel only from the first or second memory cells which have completed the current read operation regardless of whether both the first and second memory cells have completed the current read operation and convert the parallel data to serial data and shift the parallel data to an output in synchronism with the system clock signal.

Abstract: A magnetic memory device is capable of raising the upper limit of the current density of wiring, without significantly changing the material, structure, and the like, in order to deal with higher integration of storage elements constituting the magnetic memory device and miniaturization of wiring. With respect to wiring for generating a recording auxiliary magnetic field in the direction of the hard magnetization axis of a storage area of each of the magnetoresistance-effect storage elements, current for generating the magnetic field is controlled to flow bidirectionally. Thus, the current is not fixed in one direction. Consequently, deterioration and breaking due to electromigration is less likely to occur, and increases in the reliability and in the level of density can thus be realized.

Abstract: The present invention relates to a SDRAM and its control method which write or read data in synchronization with the external clock and its object is to provide a semiconductor memory device and its method which can be easily tested and evaluated by the conventional memory test equipment having a transfer type which transfers the data in synchronization with the rising and falling edges of the external clock. The semiconductor memory device has a write amplifier control section 14 and I/O data buffer/register 22 as a data transfer circuit corresponding to the data transfer type for the DDR type and SDR type. Also, a mode register 28 is formed to be used as a switch signal to switch the data transfer circuit to either DDR type or SDR type.

Abstract: A memory control apparatus for controlling the operation of a memory array in a serial memory employs a command control section for registering the bits of an instruction which is received as an externally supplied set of serial data in conjunction with a corresponding series of cycles of a clock signal, with each set of serial data formatted as a command data portion preceded by a start bit, whereby the shifting of the start bit into the MSB stage of the shift register is detected and used to terminate supplying the clock signal to the shift register, thereby eliminating the use of a counter circuit. Any additional clock signal cycle following shifting of the start bit into the MSB stage of the shift register is detected, so that operating errors caused by noise in the received clock signal can be reliably eliminated.

Abstract: In a memory controller, a serial data including an instruction bit train with addition of a start bit, a clock signal, a chip enable signal, and a reset signal are inputted. During the active period in which the chip enable signal is being inputted, the serial data is stored depending on the clock signal and an enabling signal is generated based on the end timing of active period. Thereby, memory access is executed depending on contents of the instruction bit train. However, when the relevant apparatus is reset during the active period, generation of the enabling signal based on the end timing of the active period is inhibited.

Abstract: First-in first-out (FIFO) memory devices include a plurality of memory devices that are configured to support any combination of dual data rate (DDR) or single data rate (SDR) write modes that operate in-sync with a write clock signal (WCLK) and DDR or SDR read modes that operate in-sync with a read clock signal (RCLK). These FIFO memory devices provide flexible x4N, x2N and xN bus matching on both read and write ports and enable data to be written and read on both rising and falling edges of the write and read clock signals. Custom flag generation and retransmit circuitry is also provided that can efficiently handle any width DDR write mode with any width SDR read mode or any width SDR write mode with any width DDR read mode.

Abstract: An electronic memory device monolithically integrated in semiconductor has a low pin count (LPC) serial interface. The memory device includes a memory cell array and associated row and column decode circuits. The memory device also includes a bank of T-latch registers to be addressed and accessed in a test mode for serially loading specific test data therein. The serially loading includes activating a test mode of operation by an address storage block for generating a corresponding signal, enabling the bank of T-latch registers in the device to serially receive a predetermined data set, and loading test data into the T-latch registers by using a LPC serial communication protocol.