Abstract: To provide a method for assigning a service wherein power consumption can be reduced, and an information processing apparatus for implementing the method. The method includes: receiving a request of a service provided by a device connected to a network; checking whether or not a device providing the requested service is in a sleep state; selecting a device to be used based on the checked sleep state of the device, a service table that stores a combination of a service provided via the network and a device connected to the network and providing the service, and a power consumption table that stores a device connected to the network and power consumption of the device, under conditions of a time until the service is provided and power consumption; and issuing an instruction of providing the service to the selected device.

Abstract: Embodiments of systems and methods for improved first-in-first-out (FIFO), last-in-last out (LIFO) and full-cycle decoders are described herein. In the various embodiments of the system, a clock generator is operable to generate a clock signal having an active phase and an inactive phase. A set of monotonic flip-flops are operable to capture a set of incoming data addresses during the active cycle of the clock and to generate therefrom data corresponding to single bits in the addresses that have changed compared to the data addresses received by the set of monotonic flip-flops during an immediately preceding data capture cycle. A set of static flip-flops are operable to capture a set of incoming data addresses during the inactive phase of the clock cycle and to generate set output data therefrom. A decoder operable to process the set output data from the set of static flip-flops and to generate a set of old wordlines corresponding to a set of data addresses in the immediately preceding data capture cycle.

Abstract: A non-volatile memory device comprises an interface circuit for receiving a plurality of signals. The plurality of signals provides multiplexed address and data and command signals in a serial format. An input buffer stores a plurality of the plurality of signals received in serial format and reconstitutes the address, data and command signals, and has an output. A command circuit receives the output of the input buffer and stores the command signals therefrom. An address circuit receives the output of the input buffer and stores the address signals therefrom. A data buffer circuit receives the output of the input buffer and stores the data signals therefrom. An array of non-volatile memory cells stores data from and provides data to the data buffer in response to address signals from the address decoder. A state machine is connected to the command circuit and controls the array of non-volatile memory cells.

Abstract: A memory device including a serial-parallel conversion section that converts serial data into parallel data, a parallel-serial conversion section that converts parallel data into serial data, and a parallel-parallel conversion section that changes a bit width of the parallel data. This memory device connects one external terminal to the serial-parallel conversion section and another external terminal to the parallel-serial conversion section when access using a serial interface is performed. On the other hand, the memory device connects a plurality of external terminals to the parallel-parallel conversion section when access using a parallel interface is performed, thereby enabling the memory device to occasionally realize parallel transfer of data while using a conventional package.

Abstract: Apparatus and associated method for transferring data to memory, such as resistive sense memory (RSM). In accordance with some embodiments, input data comprising a sequence of logical states are transferred to a block of memory by concurrently writing a first logical state from the sequence to each of a first plurality of unit cells during a first write step, and concurrently writing a second logical state from the sequence to each of a second non-overlapping plurality of unit cells during a second write step.

Abstract: A signal capture system and method is used to capture a data signal using a data strobe signal having a preamble of strobe signal transitions. The system includes a data latch circuit receiving the data signal. The data latch circuit is clocked by transitions of the data strobe signal to capture respective bits of data corresponding to the data signal. A decoder receives a memory command signal and generates a data start signal after a delay period from receiving the memory command signal if the command signal corresponds to a read or a write command. The receipt of read or write command signals is used by a control circuit to identify the start of valid read or write data signals. The control circuit then outputs the captured data signals responsive to the data start signal, thereby ignoring the transitions in the preamble of the data strobe signal.

Abstract: A circuit arrangement for reading out data time delayed from a semiconductor memory comprises a common data input at which read data, which are read out of a semiconductor memory, are present and a data buffer FIFO for buffering the read data. The buffer FIFI comprises a plurality of FIFO modules each comprising a plurality of individual FIFO cells. Each FIFO module can be addressed via respective allocated first input and output pointers and each FIFO cell can be addressed via respective allocated second input and output pointers. The circuit arrangement further comprises a controllable read latency generator generating the first and second output pointers for driving the FIFO modules and FIFO cells with a read latency predetermined with reference to the first and second input pointers, respectively, and a common data output at which the read data are present time-delayed in dependence on the predetermined read latency.

Abstract: An EEPROM according to the present invention includes: a semiconductor layer of a first conductive type; and a first insulating film formed on the semiconductor layer. A first impurity region, a second impurity region, a third impurity region, a fourth impurity region, and a fifth impurity region of a second conductive type are formed in top layer portions of the semiconductor layer. On the first insulating film, a select gate, a first floating gate, and a second floating gate are respectively disposed opposite a region between the first impurity region and the second impurity region, a region between the second impurity region and the third impurity region, and a region between the third impurity region and the fourth impurity region. In the first insulating film, a first tunnel window and a second tunnel window are respectively formed at portions in contact with the first floating gate and the second floating gate.

Abstract: Some embodiments include a number of nodes configured to receive a number of signals. The signals may represent information stored in a number of memory cells of a device such as a memory device. The device may include a number of transfer paths having storage elements coupled between the nodes and an output node. The transfer paths may be configured to transfer a selected signal of the signals from one of the nodes to the output node via one of the transfer paths. The transfer paths may be configured to hold a value of the selected signal in only one of the storage elements. Each of the transfer paths may include only one of the storage elements. Other embodiments including additional apparatus, systems, and methods are disclosed.

Abstract: A memory has a serial interface. The serial interface is programmable to either use separate dedicated input and output pads, or to use one bidirectional pad. When one bidirectional pad is used, the interface signal count is reduced by one.

Abstract: A memory module includes a plurality of memory devices and a stacked error correction code memory device. The plurality of memory devices includes one or more memory chips arranged in a plurality of ranks. The stacked error correction code memory device includes a plurality of error correction code memory chips. The number of error correction code memory chips is at least one more than the number of the one or more memory chips. Each of the error correction code memory chips are arranged together with the memory chips of one of the ranks.

Abstract: A semiconductor device that includes a plurality of memory cell arrays, a plurality of ports, a plurality of internal address generating circuits, and a controller. The plurality of internal address generating circuits may generate first and second internal addresses of first and second memory cell arrays of the plurality of memory cell arrays. The first internal address may designate a first area of the first memory cell array. The second internal address may designate a second area of the second memory cell array. The controller reads a series of data from the first area sequentially and writes the series of read data into the second area sequentially without transferring the series of read data to the plurality of ports.

Abstract: Methods and apparatus are disclosed, such as those involving a solid state memory device. One such method includes selecting a plurality of memory cells in a memory array. States of a plurality of data bits stored in the selected plurality of memory cells are determined. In determining the states of the plurality of data bits, a portion of the plurality of data bits are sensed faster than others. The plurality of data bits are sequentially provided as an output. In one embodiment, the portion of the plurality of data bits includes the first bit of the sequential output of the memory device.

Abstract: A memory has a serial interface. The serial interface is programmable to either use separate dedicated input and output pads, or to use one bidirectional pad. When one bidirectional pad is used, the interface signal count is reduced by one.

Abstract: A method for initializing a memory device is provided. The method includes a step for transmitting at least N+1 clock cycles to the memory device, wherein the N is an amount of bits of output serial data of the memory device. During a clock cycle of the at least N+1 clock cycles, a first start/stop signal is transmitted to the memory device. During another clock cycle of the at least N+1 clock cycles, a second start/stop signal is transmitted to the memory device.

Abstract: Control information needed for executing data transmission/reception through a data terminal is received via its own control terminal in a first operation mode, and the control information is received by using the own control terminal and also a control terminal of at least one of the other ports in a second operation mode.

Abstract: A data output circuit includes a serial data output unit for outputting a plurality of parallel data as serial data according to an operation mode, an internal information output unit for outputting internal information data according to the operation mode, and a buffering unit for receiving the serial data and the internal information data through an identical input end and buffering the received data.

Abstract: A memory system with serialized data transfer. The memory system includes within a memory controller and a plurality of memory devices. The memory controller receives a plurality of write data values from a host and outputs the write data values as respective serial streams of bits. Each of the memory devices receives at least one of the serial streams of bits from the memory controller and converts the serial stream of bits to a set of parallel bits for storage.

Abstract: A memory system with serialized data transfer. The memory system includes within a memory controller and a plurality of memory devices. The memory controller receives a plurality of write data values from a host and outputs the write data values as respective serial streams of bits. Each of the memory devices receives at least one of the serial streams of bits from the memory controller and converts the serial stream of bits to a set of parallel bits for storage.

Abstract: A method an apparatus is provided to generate a gray code sequence from a sequence of binary values having a length “L”. Accordingly, one aspect of the present invention provides a circuit comprising a cycle flag toggle circuit configured to toggle a cycle flag between a first value and a second value, an intermediate value generator coupled to an output of the cycle flag toggle circuit configured to receive the binary value, and configured to generate an intermediate value from the cycle flag and the binary value, and a binary to gray converter coupled to an output of the intermediate value generator, configured to convert the intermediate value to a gray code.

Abstract: Embodiments of a data capture system and method may be used in a variety of devices, such as in memory controllers and memory devices. The data capture system and method may generate a first set of periodic signals and a second set of periodic signals that differs from the first set. Either the first set of periodic signals or the second set of periodic signals may be selected and used to generate a set of data capture signals. The selection of either the first set or the second set may be made on the basis of the number of serial data digits in a previously captured burst of data. The data capture signals may then be used to capture a burst of serial data digits.

Abstract: In a semiconductor integrated circuit having a register file of a multiport configuration, a first holding circuit 20A is dedicated to a first functional block having one first write port section 21AW and two first read port sections 21AR1 and 21AR2. A second holding circuit 30B is dedicated to a second functional block having one second write port section 31AW and one second read port section 31BR. When it is necessary to read data held in the first holding circuit 20A from the second read port section 31BR, for example, a data interchange operation is performed as follows. After the data of the second holding circuit 30B is latched in a latch circuit 40, the data of the first holding circuit 20A is transferred to the second holding circuit 30B, and then the data of the second holding circuit 30B latched in the latch circuit 40 is transferred to the first holding circuit 20A. Thus, the area necessary to provide a register file is significantly reduced.

Abstract: When a free physical block where data is to be written is searched for, a search process for searching for a pair of free physical blocks is first executed using a free physical block search table. Detection of a free non-pair good block is executed only when a pair of free physical block is not detected in the search process using the free physical block search table. When there is a free physical block, two-plane write is executed. When there is no pair of free physical blocks, data is written in an adequately combined non-pair good blocks.

Abstract: Circuits, methods, and apparatus for FIFO memories made up of multiple local memory arrays. These embodiments limit the number and length of interconnect lines that are necessary to join two or more local memory arrays into a single, larger functional unit. One exemplary embodiment of the present invention provides a FIFO made up of a number of FIFO sub-blocks connected in series. Each FIFO sub-block includes local read and write address counters such that read and write addresses are not bused between the FIFO sub-blocks.

Abstract: A method of scanning over a substrate includes implementing a write mode of the substrate by scanning a probe across a substrate, the probe having a spring cantilever probe mechanically fixed to a probe holding structure, a tip with a nanoscale apex, and an actuator for lateral positioning of the tip; the actuator comprising a thermally switchable element and a heating element for heating the thermally switchable element; and heating the heating element to a given temperature so as to locally soften a portion of the substrate and applying a force to the softened portion of the substrate through the tip so as to create one or more indentation marks in the softened portion of the substrate.

Abstract: An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices.

Abstract: A signal capture system and method is used to capture a data signal using a data strobe signal having a preamble of strobe signal transitions. The system includes a data latch circuit receiving the data signal. The data latch circuit is clocked by transitions of the data strobe signal to capture respective bits of data corresponding to the data signal. A decoder receives a memory command signal and generates a data start signal after a delay period from receiving the memory command signal if the command signal corresponds to a read or a write command. The receipt of read or write command signals is used by a control circuit to identify the start of valid read or write data signals. The control circuit then outputs the captured data signals responsive to the data start signal, thereby ignoring the transitions in the preamble of the data strobe signal.

Abstract: In one embodiment, an integrated circuit such as an FPGA includes one or more data I/O blocks, one or more FIFOs, and a FIFO controller. At least one data I/O block receives an incoming bit stream from an external device. At least one FIFO is connected to receive a corresponding incoming bit stream from a corresponding data I/O block. The FIFO controller controls operations of the one or more FIFOs, such that (i) bits from the corresponding data I/O block are written into the at least one FIFO using a FIFO write clock that is based on an incoming clock signal and (ii) bits are read out from the at least one FIFO using a FIFO read clock that is based on a local reference clock signal.

Abstract: When the input write data is a value of a value greater than the existing data of the memory array 100, the semiconductor memory device enables writing of input write data to the memory array 100. In specific terms, the increment controller 150 reads the existing data from the memory array 100, and compares it with the write data latched to the 8-bit latch register 170. When the value of the write data is a value greater than the existing data, the increment controller 150 outputs the write enable signal WEN1 to the write/read controller 140, and executes writing of the write data latched to the 8-bit latch register 170 to the memory array 100.

Abstract: In mask programmable integrated circuit, such as a structured ASIC, a delay chain provides a delay that is set by a mask programmable switch. The delay chain receives an input to allow the delay mask programmed delay to be overridden using a JTAG controller. This allows testing of different delays. The input may also be provided by a fuse block, so that the fuse block can override the mask programmable switch, thus allowing a delay to be changes after mask programming.

Abstract: Techniques for programming trimming circuitry of a power integrated circuit without the need for separate programming pins are disclosed. According to a first aspect of the invention, there is provided a power supply controller IC with internal circuitry, a plurality of external connections, the IC further comprising trimming circuitry with no external connections to the IC other than via shared ones of the external connections. The shared external connections can comprise a first connection comprising a data input for receiving data for programming the trimming circuitry, and a second, different connection comprising a select input to select between a data receiving mode for receiving data from the data input and a programming mode for programming the trimming circuitry using the received data.

Abstract: A semiconductor device having a register and an information generation circuit can reduce data to be transferred, and consequently save electric power. The register stores first information. The information generation circuit generates, in response to a signal acquired from the an exterior of the device, second information indicating which bits of the first information is to be inverted.

Abstract: A multi-port memory device includes a plurality ports, a plurality of banks, a plurality of global data buses, first and second I/O controllers, and a test input/output (I/O) controller. The ports perform a serial I/O data transmission. The banks perform a parallel I/O data transmission with the ports. The global data buses are employed for transmitting data between the ports and the banks. The first I/O controller controls a serial data transmission between the ports and external devices. The second I/O controller controls a parallel data transmission between the ports and the global buses. The test I/O controller generates test commands based on a test command/address (C/A) inputted from the external devices and transmits a test I/O data with the global data bus during a test operation mode.

Abstract: A semiconductor memory device includes an FIFO block connected to a data input/output terminal DQ, a time-division transfer circuit that inputs and outputs in parallel n-bit data inputted and outputted continuously via the data input/output terminal DQ, a data bus RWBS that performs a data transfer between the time-division transfer circuit and the FIFO block, and a mode register that sets a burst length. When a minimum burst length settable to the mode register is m (<n), the time-division transfer circuit performs the data transfer using the data bus in units of m bits irrespective of the burst length. Thereby, it becomes possible to set the burst length smaller than a prefetch number without performing a burst chop.

Abstract: Embodiments of the invention relate generally to a coupling device, to a processor arrangement, to a data processing arrangement, and to methods for transmitting data. In an embodiment of the invention, a coupling device for coupling a memory, which has a serial data output, with a processor, which has a parallel data input, is provided. The coupling device may include a serial data interface configured to receive data, a parallel data interface configured to transmit data, and a cache memory coupled to the serial data interface and to the parallel data interface, wherein the cache memory is configured to receive and store data, which have been received in a serial data format via the serial data interface, and to transmit data stored in the cache memory to the parallel data interface.

Abstract: A memory has a serial interface. The serial interface is programmable to either use separate dedicated input and output pads, or to use one bidirectional pad. When one bidirectional pad is used, the interface signal count is reduced by one.

Abstract: In one aspect of the invention, a method of reducing intersymbol interference on a signal line is disclosed. A state machine records previous bits that were transmitted over the line. If the bit on the line has been static for several clock cycles, the slew rate will be increased to facilitate correct reading of the bit for the next clock cycle. If the bit on the line has been dynamic for the previous bits, the slew rate will be a lower slew rate to avoid crosstalk between neighboring lines.

Abstract: A memory cell array includes a plurality of non-volatile semiconductor memory elements, each memory element storing data in a non-volatile manner. A shift register stores data read from the semiconductor memory element and sequentially transfers the data outside, the shift register also stores data transferred from outside and stores the data in the semiconductor memory element. A syndrome generation circuit is connected to an output terminal of the shift register, the syndrome generation circuit generating syndrome of data output from the output terminal. An error-correction circuit uses the data and the syndrome to correct an error of the data.

Abstract: A multi-port memory device includes a first package ball out region in which a plurality of balls for a serial I/O interface part are arranged; and a second package ball out region in which a plurality of balls for a dynamic random access memory (DRAM) part are arranged.

Abstract: A megafunction block is provided that includes a serial interface enabling a user to specify settings of a configurable block of a programmable logic device. The megafunction block includes a register array having the capability of translating address information into actual addresses for a memory of the configurable block. Thus, as future configurations/standards are developed that a programmable logic device with the megafunction block will interfaces with, the settings for interfacing with the standards may be added to the register array. Consequently, the pin count will not need to increase as the megafunction block is scalable through the register map. Control logic verifies that the translated address is a valid address and the control logic will generate a selection signal based on whether a read or write operation is to be performed.

Abstract: An apparatus being connectable as a latch stage into a asynchronous latch chain comprises a reception interface, wherein upon receipt of the first signal at the reception interface, the apparatus switches to one of the first power saving mode and a second power saving mode, depending on the second signal at the reception interface and wherein the apparatus offers a first power consumption and a first wake-up time in the first power saving mode, and a second power consumption and a second wake-up time in the second power saving mode.

Abstract: Provided is a read circuit for a semiconductor memory device which may have a reduced circuit scale, and a semiconductor memory device. In a plurality of sense amplifiers of the read circuit of the semiconductor memory device, for serially reading data from a serial output terminal, if a number of byte selectors which may be selected to determine an address at a predetermined time before determination of the address is four, only four sense amplifiers are required in total, and hence the read circuit and the semiconductor memory device are reduced in circuit scale.

Abstract: A technique is presented for implementing a content addressable memory (CAM) function using traditional memory, where the input data is serially loaded into a serial CAM. Various additions, which allow for predicting the result of a serial CAM access coincident with the completion of serially inputting the data are also presented.

Abstract: Some embodiments include a number of nodes configured to receive a number of signals. The signals may represent information stored in a number of memory cells of a device such as a memory device. The device may include a number of transfer paths having storage elements coupled between the nodes and an output node. The transfer paths may be configured to transfer a selected signal of the signals from one of the nodes to the output node via one of the transfer paths. The transfer paths may be configured to hold a value of the selected signal in only one of the storage elements. Each of the transfer paths may include only one of the storage elements. Other embodiments including additional apparatus, systems, and methods are disclosed.

Abstract: An integrated circuit (IC) package includes an interface die and a separate storage die. The interface die has a synchronous interface to receive memory access commands from an external memory controller, and has a plurality of clockless memory control interfaces to output row and column control signals that correspond to the memory access commands. The storage die has a plurality of independently accessible storage arrays and corresponding access-control interfaces to receive the row and column control signals from the clockless memory control interfaces, each of the access-control interfaces including data output circuitry to output read data corresponding to a given one of the memory access commands in a time-multiplexed transmission.

Abstract: A memory device is adapted to be connected in a daisy chain with a memory controller and one or more other memory devices. The memory device includes at least one data input port and at least one data output port for communicating data along the daisy-chain between the memory devices and the memory controller. The memory device is adapted to selectively enable/disable at least one of the data input or data output ports in response to whether a command received from the memory controller is intended for the memory device, or for one of the other memory devices.

Abstract: Proposed is a highly reliable storage apparatus with fast access speed and low power consumption, as well as a controller and control method for controlling such a storage apparatus. This storage apparatus is equipped with a flash memory that provides a storage extent for storing data, a disk-shaped memory device with more data write cycles than the flash memory, and a cache memory with faster access speed than the flash memory. Data provided from a host system is stored in the cache memory, this data is read from the cache memory at a prescribed timing, data read from the cache memory is stored in the disk-shaped memory device, and, when a prescribed condition is satisfied, this data is read from the disk-shaped memory device, and the data read from the disk-shaped memory device is stored in the flash memory.

Abstract: A non-volatile memory device comprises an interface circuit for receiving a plurality of signals. The plurality of signals provides multiplexed address and data and command signals in a serial format. An input buffer stores a plurality of the plurality of signals received in serial format and reconstitutes the address, data and command signals, and has an output. A command circuit receives the output of the input buffer and stores the command signals therefrom. An address circuit receives the output of the input buffer and stores the address signals therefrom. A data buffer circuit receives the output of the input buffer and stores the data signals therefrom. An array of non-volatile memory cells stores data from and provides data to the data buffer in response to address signals from the address decoder. A state machine is connected to the command circuit and controls the array of non-volatile memory cells.

Abstract: In a semiconductor integrated circuit having a register file of a multiport configuration, a first holding circuit 20A is dedicated to a first functional block having one first write port section 21AW and two first read port sections 21AR1 and 21AR2. A second holding circuit 30B is dedicated to a second functional block having one second write port section 31AW and one second read port section 31BR. When it is necessary to read data held in the first holding circuit 20A from the second read port section 31BR, for example, a data interchange operation is performed as follows. After the data of the second holding circuit 30B is latched in a latch circuit 40, the data of the first holding circuit 20A is transferred to the second holding circuit 30B, and then the data of the second holding circuit 30B latched in the latch circuit 40 is transferred to the first holding circuit 20A. Thus, the area necessary to provide a register file is significantly reduced.

Abstract: Data are stored in cells of a flash memory by assigning a first portion of the data to be stored in a first cell and a second portion of the data to be stored in one or more second cells. The first cell is programmed to store the first portion in accordance with the second portion. The second cell(s) is/are programmed to store the second portion. At least a portion of the programming of the first cell is effected before any of the programming of the second cell(s).