Abstract: A semiconductor memory that reduces the power consumption of a memory cell array without exercising control by a microprocessor. The semiconductor memory comprises a memory cell array, a switch for turning on/off power corresponding to row addresses of the memory cell array, an address control section for exercising sequence control on the basis of a write pointer (WP) generated at the time of a write signal being inputted for designating a row address to which data of a predetermined data stream is to be written and a read pointer (RP) generated at the time of a read signal being inputted for designating a row address from which the data is to be read out, and a switch signal output section for generating switch signals for controlling the switch on the basis of the WP and the RP.

Abstract: A content addressable memory device including a memory to store a searchable database, a search circuit, and a first-in-first-out storage circuit. The search circuit generates a plurality of address values that correspond to unoccupied storage locations within the memory, and the plurality of address values are queued within the first-in-first-out storage circuit to enable the address values to be read in succession by an external device.

Abstract: A method for reading data is provided. The method includes generating two or more pulses from a first clock signal by which the data to be read is received, using each generated pulse to latch data received at a corresponding time, and detecting a first time region during which the data is received. The method also includes using the detected first time region to determine a second time region during which the data may be read using the second clock signal and reading the data using a second clock signal during the second time region.

Abstract: A semiconductor memory device includes a memory cell array to store data; a data input portion to output data to the memory cell array in response to a write control signal; a data output portion to output data from the memory cell array in response to a read control signal; a data I/O gate to transmit data outputted from the data input portion to the memory cell array in response to the write control signal, and transmitting data outputted from the memory cell array to the data output portion in response to the read control signal; and a data I/O controller to generate the read control signal and the write control signal having a smaller minimum cycle time than a minimum cycle time of the read control signal. The semiconductor memory device has an improved operation performance compared to one having a low operation frequency within an operable frequency range.

Abstract: Embodiments of the present invention include a data output circuit that can read data in parallel from a plurality of latches in a pipeline circuit. Even-numbered data and odd-numbered data are simultaneously output over a single clock cycle, and are then converted into DDR data and are then serially output. By moving data in this manner, embodiments of the invention can reduce the number of necessary control signals by as much as 50% over conventional data output circuits.

Abstract: An improved on-chip storage memory and method for storing variable data bits, the memory including an on-chip storage memory system for storing variable data bits that has a memory for storing data bits, a wrapper for converting the memory into a first-in first-out (FIFO) memory, and a controller for performing operations on the memory. In operation, the memory is converted into a FIFO memory after storing data, and output logic selects data to be output in a serial manner.

Abstract: A semiconductor device includes an interface which executes an interfacing process with a semiconductor memory, and a circuit which performs control to write serial data to the semiconductor memory while skipping a position of a defective column on the semiconductor memory.

Abstract: A two-dimensional data memory (1) comprising memory elements which are arranged in rows and columns, which are designed to store in each case one data word, which in the row direction and in the column direction are coupled locally to their respectively adjacent memory elements such that with each control pulse of a row control signal the data words of the memory elements of all rows are shifted in a shift direction into the memory elements of the respectively adjacent row, with the data words of the last row being shifted into the first row, and such that with each control pulse of a column control signal the data words of the memory elements of all columns are shifted in a shift direction into the memory elements of the respectively adjacent column, with the data words of the last column being shifted into the first column, and which are designed such that an external write access is possible only in respect of at least one predefined row and at least one predefined column and such that an external read acc

Abstract: Programmable logic devices (PLDs) that can be repeatedly erased and reprogrammed, e.g., during the testing and/or design phases, and then converted to one-time programmable (OTP) devices on a permanent basis, and methods of converting a PLD to an OTP device. In some embodiments, only the erase function is disabled in the device. Because programming data cannot then be erased from the device, the addition of new programming data is very unlikely to yield an operable design. Therefore, the programming function is also effectively disabled. The programming function can be directly disabled in addition to or instead of the erase function, if desired. The erase and/or programming functions can be disabled, for example, by blowing one or more fuses included in the erase and/or programming circuitry of the PLD.

Abstract: At least one complete cell array having a predetermined memory capacity and an incomplete cell array having a capacity smaller than the predetermined memory capacity are arranged in one direction. The incomplete cell array is disposed closer to a signal control unit than the complete cell array. The signal control unit disposed on one-end side of a row of the cell arrays receives/outputs a signal from/to a global line. A read/write control unit disposed between the cell arrays controls data read/write from/to the cell arrays. The global line extends from one-end side of the row of the cell arrays to be connected to the read/write control unit. The global line is always wired on the short incomplete cell array, thereby reducing load capacitance and charge/discharge current thereof. This can reduce power consumption of a semiconductor memory, and shorten the access time thereof.

Abstract: Circuitry and methods for an efficient FIFO memory are provided. This efficient FIFO memory has two smaller standard single-port memory banks instead of one large dual-port memory bank, as in typical FIFO memories. Whereas the dual-port memory based FIFO memory can read and write data at the same time, a typical single-port memory based FIFO cannot. The operation of the two single-port memory banks are coordinated in order to provide similar or better performance than a dual-port memory based FIFO.

Abstract: A configurable length first-in first-out (FIFO) memory includes a memory core for storing data, a write address counter connected to the memory core for counting locations for writing the data to be stored, and a read address counter connected to the memory core for counting the locations for reading the stored data. The read address counter includes a comparator for generating a synchronous reset for itself. A selector is connected to the comparator for selecting a user defined FIFO length, or a pre-programmed write address counter length.

Abstract: First-in-first-out (FIFO) structures are recognized and verified in integrated circuit (IC) designs. The FIFO recognition is based on structural analysis of the design. Specifically, the structural analysis includes performing seed based recognition by identifying logic elements that indicate the existence of candidate FIFO circuitry and then exploring the candidate circuitry to completely verify the presence of a FIFO structure. Recognized FIFOs may be verified to ensure the proper generation of the full and empty flags.

Abstract: A relief processing section which performs a relief process with respect to a redundant memory comprises a plurality of defect relief sections each having shift register circuits (relief information storing section). The shift register circuits are connected in series so as to successively transfer data. A test circuit tests the redundant memory, and serially outputs relief information for relieving a defective cell. The relief processing section stores the relief information into the shift register circuits using a data transfer operation thereof.

Abstract: A memory system with serialized data transfer. The memory system includes within a memory controller and a plurality of memory devices. The memory controller receives a plurality of write data values from a host and outputs the write data values as respective serial streams of bits. Each of the memory devices receives at least one of the serial streams of bits from the memory controller and converts the serial stream of bits to a set of parallel bits for storage.

Abstract: A memory device is operable in either a high mode or a low speed mode. In either mode 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.

Abstract: A control unit is set up to generate and output periodic clock signals, that are in sync with and at the same frequency as a periodic basic clock that is input into it, and periodic control signals, that are likewise in sync with the basic clock, and to turn on/turn off output of at least the clock signal in reaction to an activation/deactivation signal, which is routed to it externally, to a synchronous parallel/serial converter executing synchronization and serialization of a parallel data signal with the basic clock. Whereas output of the clock signal and optionally of the control signals are turned off, immediately after the activation/deactivation signal has assumed its deactivation state, the control unit is able to synchronize turning control signals on again, when the activation/deactivation signal has assumed its activation state.

Abstract: A semiconductor memory device includes plural ports for transmitting an input data serial-interfaced with an external device into a global data bus, plural banks for parallel-interfacing with the plural ports through the global data bus, plural input signal transmission blocks, responsive to a mode register enable signal, for transmitting an input signal parallel-interfaced with the external device into the global data bus, and a mode register set for determining one of a data access mode and a test mode based on the input signal inputted through the global data bus.

Abstract: A signal capture system and method is used to capture a data signal using a data strobe signal having a preamble of strobe signal transitions. The system includes a data latch circuit receiving the data signal. The data latch circuit is clocked by transitions of the data strobe signal to capture respective bits of data corresponding to the data signal. A decoder receives a memory command signal and generates a data start signal after a delay period from receiving the memory command signal if the command signal corresponds to a read or a write command. The receipt of read or write command signals is used by a control circuit to identify the start of valid read or write data signals. The control circuit then outputs the captured data signals responsive to the data start signal, thereby ignoring the transitions in the preamble of the data strobe signal.

Abstract: Methods and apparatus for accessing serial presence detect data are provided. For some embodiments, serial presence detect logic is incorporated in memory devices, eliminating the need for a separate serial presence detect component.

Abstract: The present invention discloses an asynchronous first-in-first-out cell, wherein modified Muller C elements are used to reduce the complexity of the circuit of the asynchronous first-in-first-out cell; the asynchronous first-in-first-out cell of the present invention not only can be reusable, but also can apply to a single-supply-voltage system with a single clock frequency or multiple clock frequencies and a multiple-supply-voltage system with a single clock frequency or multiple clock frequencies. Further, when the asynchronous first-in-first-out cell of the present invention is applied to the interface circuit of a dual-supply-voltage 16-point radix-22 GALS-based FFT architecture, considerable power saving and latency reduction can be achieved.

Abstract: An electrical fuse circuit of the present invention includes a plurality of electrical fuse cores (1) each of which has an electrical fuse element (3) and a switch transistor (4) connected in series with each other, and shift registers (2) connected to the plurality of electrical fuse cores (1) to program the electrical fuse elements (3). Program enable signals (Si) are sequentially generated and transferred by the shift registers (2), the switch transistors (4) are sequentially brought into conduct according to the program enable signals (Si) and the information of program data (Di), and the electrical fuse elements (3) are blown one by one.

Abstract: A semiconductor device having a super junction structure includes: multiple first columns extending in a current flowing direction; and multiple second columns extending in the current flowing direction. The first and second columns are alternately arranged in an alternating direction. Each first column provides a drift layer. The first and second columns have a boundary therebetween, from which a depletion layer expands in case of an off-state. At least one of the first columns and the second columns have an impurity dose, which is inhomogeneous by location with respect to the alternating direction.

Abstract: Each of identically configured logic inverter circuits 10a, 10b, 10c, and 10d comprises a PMOS transistor MP1 (abbreviated as MP1 hereinafter), and NMOS transistors MN1 and MN2 (abbreviated as MN1 and MN2 hereinafter). Gates of MP1 and MN1 are connected to input terminal IN1, gate of MN2 is connected to input terminal IN2, drains of MP1 and MN1 are connected to an output terminal OUT, source of MN1 is connected to the drain of MN2, source of MP1 is connected to a controllable power supply VC, and source of MN2 is grounded. Input terminals IN1 and IN2 of logic inverter circuits 10a, 10b, 10c, and 10d are connected to output terminals OUT of the logic inverter circuits 10b and 10c, 10c and 10d, 10d and 10a, and 10a and 10b respectively. High-speed four-phase clock signals are generated.

Abstract: A memory device includes: a memory array for storing data; data pads for supplying as an output of the memory device data retrieved from the memory array in a read operation; parallel read data paths each coupled between the memory array and the data pads, where the parallel read data paths include synchronous data paths operable in different modes of operation and an asynchronous data path; and a mode selector for selecting one of the parallel read data paths to supply data retrieved from the memory array to the data pads.

Abstract: In a NOR flash memory device with a serial sensing operation, and method of sensing data bits in a NOR flash memory device, the device includes a multilevel cell, a sense amplifying circuit, a data buffer, a data latch circuit, and a control logic circuit. The sense amplifying circuit serially detects plural data bits stored in the multilevel cell. The data buffer is provided to buffer the data bit detected by the sense amplifier. The data latch circuit stores an output value of the data buffer for a time. The control logic circuit regulates the sense amplifying circuit to detect a lower data bit stored in the multilevel cell in response to a higher data bit held in the data latch. Here, the control logic circuit initializes an output terminal of the data buffer before or while sensing each of the plural data bits by the sense amplifier.

Abstract: A memory controller comprises a circuit to convert a set of parallel constituent bits to a serial stream of constituent bits. A first output driver receives at least four bits of the serial stream of constituent bits in succession from the circuit. The first output driver outputs the at least four bits of the serial stream of constituent bits onto a first external signal line.

Abstract: A memory device having a clock multiplier circuit. The memory device includes a clock generating circuit to receive a first clock signal having a first frequency and to generate a second clock signal having a second frequency that is a multiple of the first frequency. The memory device includes a data receive circuit to receive data at the frequency of the second clock signal and may also include a data transmit circuit to transmit data at the frequency of the second clock signal. Further, the clock generating circuit may additionally generate a third clock signal having a third frequency that is also a multiple of the first frequency, the third clock signal being supplied to a control circuit of the memory device to time the reception of control and/or address signals therein. In a particular embodiment the second frequency is a four-times or eight-times multiple of the first frequency, and the third frequency is a two-times multiple of the first frequency.

Abstract: Methods and circuitry for implementing high speed first-in first-out (FIFO) structures. In one embodiment, a FIFO is disclosed that allows the frequency of one clock, e.g., the write clock, to be different than (e.g., half) that of the other (read) clock. In another embodiment a FIFO is presented that can be set and/or reset asynchronously. Other embodiments are disclosed wherein the read and write pointers are effectively monitored to ensure proper timing relationship, to detect loss of clock as well as to detect other abnormal FIFO conditions.

Abstract: In a packet addressing method, one or more memory blocks are selected from a plurality of memory blocks and one or more data I/O pads are selected from a plurality of data I/O pads via which data input or output to/from the selected memory blocks are loaded, memory cell data output from the selected memory blocks are sequentially output to the selected data I/O pads, and data input to the selected data I/O pads are sequentially input to the selected memory blocks, so that read and write operations are independently accomplished in each of data I/O pads. The data I/O width can be adjusted according to the word length which is selectively set up, and power consumption can be reduced due to partial activation of the memory block.

Abstract: A semiconductor memory device has common terminals shared between a part or all of address terminals for receiving n bits of an address signal and data terminals for outputting a data signal with its bit width of n bits or less and dedicated address terminals for receiving m bits of the address signal, wherein at the time of a read, after the n bits of the address signal have been input, a plurality of data signals within a selected page are consecutively read out through the common terminals using the m bits of the address signal input from the dedicated address terminals.

Abstract: An on-chip bypass capacitor and method of manufacturing the same, the on-chip bypass capacitor including at least two capacitor arrays, each capacitor array including a first layer connecting the at least two capacitor arrays in series, each capacitor array including a plurality of capacitors, each of the plurality of capacitors including a second layer connecting the plurality of capacitors in parallel. The on-chip bypass capacitor may be part of a chip which also includes a memory cell array including at least one cell capacitor.

Abstract: The present invention provides a system and method for implementation and use of a shared memory. The shared memory may be accessed both independently and asynchronously by one or more processes at corresponding nodes, allowing data to be streamed to multiple processes and nodes without regard to synchronization of the plurality of processes. The various nodes may be adaptive computing nodes, kernel or controller nodes, or one or more host processor nodes. The present invention maintains memory integrity, not allowing memory overruns, underruns, or deadlocks. The present invention also provides for “push back” after a memory read, for applications in which it is desirable to “unread” some elements previously read from the memory.

Abstract: A buffer cache interposed between a non-volatile memory and a host may be partitioned into segments that may operate with different policies. Cache policies include write-through, write and read-look-ahead. Write-through and write back policies may improve speed. Read-look-ahead cache allows more efficient use of the bus between the buffer cache and non-volatile memory. A session command allows data to be maintained in volatile memory by guaranteeing against power loss.

Abstract: A memory device and system are disclosed that may include a serial data interface, a serial address interface, and a reference clock interface. The reference clock interface is configured to receive a signal from a reference clock source that provides a reference clock signal to a memory control device. The serial interfaces are coupled to other memory devices or memory control devices. A method of transferring data within a memory system using serial interfaces is also disclosed. The method includes performing clock multiplication on a reference clock to provide a multiplied clock, using the multiplied clock to serialize and transmit data onto a serial interface, recovering data from the seal interface, using the reference clock to determine an initial frequency for use by clock and data recovery module, using the data recovered from the serial interface to determine a phase and final frequency of a recovered clock, and using the recovered clock to de-serialize received serial data into parallel data words.

Abstract: A programmable logic device (PLD) has the ability to test the configuration memory either independently or during configuration. The PLD may include a selector for selecting a particular column or row of the configuration memory array, and an input data storage device for storing configuration data required to be stored in the selected column or row, or test data for testing the selected column or row. The PLD may also include an output data storage device for storing the output from the selected column or row, and test logic that provides control signals for verifying the correct operation of the data lines of the configuration memory array without disturbing the data stored in the memory array.

Abstract: Methods and circuitry for implementing high speed first-in first-out (FIFO) structures. In one embodiment, a FIFO is disclosed that allows the frequency of one clock, e.g., the write clock, to be different than (e.g., half) that of the other (read) clock. In another embodiment a FIFO is presented that can be set and/or reset asynchronously. Other embodiments are disclosed wherein the read and write pointers are effectively monitored to ensure proper timing relationship, to detect loss of clock as well as to detect other abnormal FIFO conditions.

Abstract: First-in first-out (FIFO) memory devices are configured to support all four of the following FIFO memory modes: (1) DDR write with DDR read, (2) DDR write with SDR read, (3) SDR write with DDR read and (4) SDR write with SDR read. These FIFO memory devices provide flexible x4N, x2N and xN bus matching on both read and write ports and enable data to be written and read on both rising and falling edges of the write and read clock signals. Custom flag generation and retransmit circuitry is also provided that can efficiently handle any width DDR write mode with any width SDR read mode or any width SDR write mode with any width DDR read mode.

Abstract: A method of reading data in and outputting data from a memory structure includes a buffer. In the present method, first read operation is undertaken to read a first set of data in the memory structure and provide data of the first set of data to the buffer, using an output clock. A first output operation is undertaken providing data read in the first read operation from the buffer, and a second read operation is undertaken to read a second set of data in the memory structure and provide data of the second set of data to the buffer, using the output clock. A second output operation is undertaken providing data read in the second read operation from the buffer.

Abstract: A FIFO-register (10) according to the invention comprises a sequence of register cells (10.1, . . . ,10.m), which register cells have a data section (40) and a status section (30). Data (Din) provided at an input (20) is shifted via the data sections (40) in the register cells to an output (50). The status section (30) of each cell indicates whether the data section (40) of that cell contains valid data. The status section of a cell comprises a control unit (37) coupled to a status input (32), to a status output (33) and to a clock input (31), and generates an output clock signal (Cli), which controls charge controlling elements (35, 36) coupled to the status input and the status output and controls the data section (40). The status output (33) of a status section (30) and the status input (32?) of its successor (30?) share a common capacitive node (33).

Abstract: The present invention provides an overflow detector for a FIFO. The FIFO includes a plurality of registers each having an input and an output, a plurality of write signals each respectively coupled to a clock, one of the plurality of registers, and a plurality of read switches each respectively coupled to an output of one of the plurality of registers, each of the plurality of read switches being controlled by a respective read signal. The overflow detector includes a plurality of clocked registers each of which is coupled to receive a write signal and its corresponding read signal, wherein each clocked register records a read signal and is clocked by the corresponding write signal.

Abstract: The present invention relates to a non volatile memory device architecture, for example of the Flash type, incorporating a memory cell array and an input/output interface to receive memory data and/or addresses from and to the outside of the device. The interface operates generally according to a serial communication protocol, but it is equipped with a further pseudo-parallel communication portion with a low pin number incorporating circuit blocks for selecting the one or the other communication mode against an input-received selection signal.

Abstract: A memory device is operable in either a high mode or a low speed mode. In either mode, 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.

Abstract: Circuitry and methods for an efficient FIFO memory are provided. This efficient FIFO memory has two smaller standard single-port memory banks instead of one large dual-port memory bank, as in typical FIFO memories. Whereas the dual-port memory based FIFO memory can read and write data at the same time, a typical single-port memory based FIFO cannot. The operation of the two single-port memory banks are coordinated in order to provide similar or better performance than a dual-port memory based FIFO.

Abstract: A data synchronization arrangement is provided that is fail-safe at high speed and low power consumption, for exchanging clocked data between different clock domains running in a digital processing equipment at the same clock frequency but at an arbitrary relative phase shift. A register arrangement has a predetermined number of parallel registers, each register having a data input, a write clock input, a read clock input and a data output. A write select multiplexer has an input receiving a write clock signal from a first clock domain, one clock output for each of the parallel registers and connected to a write clock input of a respective register, and one write select input for each clock output. A read select multiplexer has an input receiving a read clock signal from a second clock domain, one clock output for each of the parallel registers and connected to a read clock input of a respective register, and one read select input for each clock output.

Abstract: A magnetic memory device includes magnetoresistance-effect storage elements arranged so as to store information by using a change in a magnetization direction of a storage area of each of the storage elements, and a control unit. The control unit controls a polarity of a first wiring current for generating a recording auxiliary magnetic field in a direction of a hard magnetization axis of the storage area, and a polarity of a second wiring current for generating a recording magnetic field in a direction of an easy magnetization axis of the storage area. Each of the first and second wiring currents has a first polarity when generating a “1” and a second polarity, different from the first polarity, when generating a “0”.

Abstract: Memory interface methods and apparatus for processing source synchronous data from a memory device (DRAM). The methods and apparatus synchronously transfer data from the memory device to a memory controller even though the time variability of read return strobe signals is greater than one clock cycle.

Abstract: An integrated circuit chip includes a number of memory bitcells. Each bitcell includes: a latch having a sense node; a programming transistor having an efficient saturation region of operation; and a fuse connected to the programming transistor at a first terminal of the fuse. A programming voltage can be supplied to the fuse at a second terminal of the fuse; and a logic gate circuit is connected to the gate of the programming transistor. The logic gate circuit is operated at the programming voltage so that the logic gate circuit drives the programming transistor in the efficient saturation region when programming the fuse. The bitcell also includes a fuse-sensing circuit having no more than one transistor. Operation in the efficient saturation region allows the programming transistor to be small. Combined with using no more than one sensing transistor, significant reduction in area of the bitcells on the chip is achieved.

Abstract: A FIFO circuit includes a memory such as a register array having a plurality of storage locations. One or more data inputs can be coupled to the memory for receiving data that is to be stored therein. A control circuit controls the storage of data received from the one or more data inputs into the memory. In one embodiment, a particular one (e.g., memory location 0) of the plurality of storage locations is used as the location from which all data from the memory is outputted from. A multiplexer is used to move the data from within the memory into this particular memory location. The control circuit includes circuitry which allows for data received from the one or more data inputs to be stored substantially at the same time into the memory. In another embodiment, the FIFO circuit includes one data input for receiving data from a write bus and a second data input for receiving data from a read bus.

Abstract: An integrated circuit chip includes a plurality of independent FIFO memory devices that are each configured to support all four combinations of DDR and SDR write modes and DDR and SDR read modes and collectively configured to support all four multiplexer, demultiplexer, broadcast and multi-Q operating modes. The multi-Q mode of operation supports write path queue switching that is free of write word fall-through and read path queue switching that is free of read word fall-through. The multi-Q mode also supports write path queue switching on every write cycle in both SDR and DDR write modes and independent read path queue switching on every read cycle in both SDR and DDR read modes.