Abstract: A display device includes a support material on which a display area, a terminal, and a folding area are disposed. The display area includes a TFT and a light-emitting device layer. The display device includes: a first resin layer and a second resin layer extending along the display area, the terminal, and the folding area; and an organic SOG film provided between the first resin layer and the second resin layer, and laid through the folding area.

Abstract: A method of manufacturing a display apparatus includes forming a first conductive layer on a base substrate including a panel area and a margin area disposed next to the panel area, the margin area including a dummy pattern area, forming a photoresist layer on the first conductive layer, forming a photoresist pattern by exposing and developing the photoresist layer, forming a first conductive pattern by etching the first conductive layer using the photoresist pattern, and removing the photoresist pattern. The forming the first conductive pattern includes forming a first pixel circuit pattern in the panel area, and forming a dummy pattern in the dummy pattern area of the margin area. An opening ratio of a portion where the dummy pattern is not formed with respect to the dummy pattern area is about 30% or more.

Abstract: A display device includes a flexible substrate, a self-luminescent element, and a support member. The flexible substrate has a first face and a second face opposed to the first face. The self-luminescent element is provided on the first face of the flexible substrate. The support member includes a magnetic material and is provided on the second face of the flexible substrate.

Abstract: The present disclosure relates to a composite substrate adapted for manufacturing a flexible display screen. The composite substrate includes a base substrate, a sacrificial layer, and a flexible layer. The sacrificial layer is located on the base substrate. The flexible layer is located on the sacrificial layer. The sacrificial layer is an inorganic layer which contains hydrogen element and is semi-transparent. The present disclosure further provides a method for manufacturing a flexible display screen, comprising: depositing a sacrificial layer on a base substrate, the sacrificial layer is an inorganic layer, the inorganic layer contains hydrogen element and is semi-transparent; forming a flexible layer on the sacrificial layer; forming electronic components on the flexible layer; and irradiating the sacrificial layer by a laser beam to cause the hydrogen element in the sacrificial layer to form hydrogen gas bubbles, so as to separate the base substrate and the sacrificial layer.

Abstract: Provided is a method of manufacturing a light-emitting element, the method including positioning a substrate, forming a first separation layer, which includes a first sacrificial layer, an etching control layer on the first sacrificial layer, and a second sacrificial layer on the etching control layer, on the substrate, forming at least one first light-emitting element on the first separation layer, and separating the first light-emitting element from the substrate.

Abstract: The present invention discloses a display panel and a display panel manufacturing method. The display panel includes: a substrate; a pixel definition layer including an auxiliary electrode and a pixel electrode layer disposed at an interval; electron transport layer; a cathode layer; organic layer; an OLED light emitting layer; an insulation column disposed on the auxiliary electrode; and a metal layer disposed on a first side of the insulation column; wherein the cathode layer is connected electrically to the auxiliary electrode through the metal layer.

Abstract: An array substrate and a display panel are disclosed. The array substrate includes a first common electrode, a plurality of touch sensing electrode wires, and a second common electrode. The first common electrode includes at least two first common electrode plates, each of the touch sensing electrode wires includes at least two discontinuous electrode lines, and each of the electrode lines corresponds to one of the first common electrode plates, wherein two adjacent of the electrode lines are electrically connected via the second common electrode plate.

Abstract: A display panel manufacturing device including a stage slider, a first stage configured to slide on the stage slider and to receive a test substrate, a second stage on the stage slider and configured to receive a main substrate, and a patterning unit located at a distance from the stage slider and configured to discharge organic drops onto the test substrate, configured to analyze patterns of the organic drops, configured to modify the patterns of the discharged organic drops according to an analysis of the patterns of the organic drops, and configured to discharge the organic drops onto the main substrate.

Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other.

Abstract: The purpose of the present invention is to decrease the process temperature for a multilayer glass into which an optical element is to be packed, thereby reducing the damage to the optical element during processing. A multilayer glass according to the present invention is so configured that a gap formed between glass plates is sealed with a sealing material that can fix at a process temperature lower than a temperature employed for the processing of an optical element (see FIG. 1).

Abstract: An optical transmission method includes outputting a first light based on a first electronic signal, outputting a second light based on a second electronic signal, and polarizing and combining the first light and the second light, and outputting the polarized and combined first and second lights to an optical fiber.

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

Abstract: An organic light emitting display device includes a thin film transistor on a substrate including a display area having an inner light-emitting area and an outer light-emitting area and a peripheral area, a first conductive member connected to the thin film transistor, a first via insulation layer covering the first conductive member, a second conductive member on the first via insulation layer to overlap the outer light-emitting area and a part of the peripheral area, a second via insulation layer covering the second conductive member, a first electrode on the second via insulation layer to overlap the display area and a part of the peripheral area, an organic light emitting layer on the first electrode, and a second electrode on the organic light emitting layer. The second via insulation layer and the first electrode have a step structure between the inner and outer light-emitting areas.

Abstract: The disclosure discloses a display panel and a display device. Since at least a part of the transparent areas includes the transparent auxiliary electrode electrically connected with the cathode in the adjacent pixel display area and extends to a top of the cathode auxiliary wire to be electrically connected with the cathode auxiliary wire, i.e., the cathode is electrically connected with the cathode auxiliary wire via the transparent auxiliary electrode, resistance of the cathode is reduced by the use of the transparent auxiliary electrode. Furthermore, since the transparent auxiliary electrode is arranged in a transparent area, neither the size of the at least one pixel display area is reduced, nor the transparent function of the transparent areas is affected.

Abstract: An object of the invention is to provide an organic electroluminescence module having light-emitting units capable of keeping power consumption low and to provide an information device having such a module. The organic electroluminescence module of the invention includes a plurality of light-emitting units that are electrically connected to one another and each have a light-emitting region corresponding to a design to be displayed by light emission.

Abstract: Provided are a manufacturing method of a transistor on color filter type organic light emitting display and a transistor on color filter type organic light emitting display. In the manufacturing method of a transistor on color filter type organic light emitting display, after preparing the color filter layer, by coating the zinc oxide solution mixed with lithium on the gate insulation layer in a spin coating manner to form a zinc oxide coating layer mixed with lithium and then, by annealing the zinc oxide coating layer mixed with lithium and patterning the zinc oxide coating layer mixed with lithium to form a channel layer, the process temperature can be as low as 200 Celsius degrees to satisfy the temperature condition of manufacturing the transistor on color filter type organic light emitting display and the operation is easy without using the expensive vacuum equipment.

Abstract: A method for manufacturing an OLED backplate and a method for manufacturing an OLED panel are provided. In the method for manufacturing the OLED backplate of the present disclosure, a protective photoresist layer is manufactured on a pixel defined layer in which the top surface thereof has a hydrophobic property and the side surfaces thereof have a hydrophilic property before an electrode layer is treated by an oxygen plasma to remove photoresist residues, thereby the top surface of the pixel defined layer covered by the protective photoresist layer is not affected by the oxygen plasma in the proceeding of an oxygen plasma treatment, and still has the hydrophobic property. Therefore, the properties of the top surface of the pixel defined layer having the hydrophobic property and the side surfaces of the pixel defined layer having the hydrophilic property are kept while the photoresist residues on the electrode layer is removed, and thus an OLED device can be easily manufactured by an ink-jet printing process.

Abstract: The present disclosure provides a method for manufacturing a thin film transistor comprising: forming a buffer layer, an oxide semiconductor layer, a gate insulating layer, and a gate electrode sequentially on a substrate, wherein on both sides of the first region of the oxide semiconductor layer are second regions where the gate electrode is exposed; forming an aluminum layer covering the buffer layer, the second regions of the oxide semiconductor layer and the gate electrode by a physical vapor deposition method, and annealing the aluminum layer, making the second regions of the oxide semiconductor layer being doped by aluminum ions to form conductor regions; etching the remaining aluminum layer after the annealing treatment; renovating the etched surfaces of the buffer layer, the gate electrode and the conductor regions, and oxidizing the conductor regions; stacking an insulating layer, and forming a source electrode and a drain electrode on the insulating layer.

Abstract: A method of manufacturing a light-emitting device includes steps of: preparing at least one substrate having a plurality of through holes; providing an electric wire on a rear surface side of the substrate so that a plurality of portions of the electric wire communicates with a front surface side of the substrate at the plurality of through holes of the substrate; and respectively mounting a plurality of light-emitting diodes to the respective portions of the electric wire that communicate with the front surface side of the substrate.

Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a substrate. The semiconductor device also includes a first fin and a second fin over the substrate. The semiconductor device further includes a first gate electrode and a second gate electrode traversing over the first fin and the second fin, respectively. In addition, the semiconductor device includes a gate dielectric layer between the first fin and the first gate electrode and between the second fin and the second gate electrode. Further, the semiconductor device includes a dummy gate electrode over the substrate, and the dummy gate electrode is between the first gate electrode and the second gate electrode. An upper portion of the dummy gate electrode is wider than a lower portion of the dummy gate electrode.

Abstract: A method of forming a thin film, the method including: disposing a resist portion on a substrate, the resist portion including: a first region including a first upper surface; and a second region including a second upper surface, the first upper surface disposed higher than the second upper surface and forming a step; disposing a first protection layer covering the resist portion; exposing the first upper surface; removing the first region; disposing a first thin film on the substrate; disposing a second protection layer covering the first thin film; exposing the second upper surface; removing the second region; disposing a second thin film on the substrate; and removing the first protection layer and the second protection layer.

Abstract: The present invention discloses an array substrate, a method for ink jet printing thereon, an organic electroluminescent display, and a display panel. The array substrate comprises an active region which comprises a plurality of pixel regions arranged in an array, and a contact hole region which is arranged at an outer side of the active region and comprises a plurality of contact holes. An anti-overflow region comprising at least one pixel hole is arranged between the contact hole region and the active region. By means of the pixel hole in the anti-overflow region, during ink jet printing on the array substrate, the ink flowing from the active region to the contact hole region can be made to flow into the pixel hole in the anti-overflow region, thus alleviating the problem in which residual liquid in the contact holes of the contact hole region is difficult to clean up and thus leads to display defects.

Abstract: An active matrix light emitting diodes display module integrated with single-walled carbon nanotubes control circuits includes a light emitting diode pixel having a crystalline semiconductor light emitting diode, single-walled carbon nanotubes switching transistors and a charge storage capacitor.

Abstract: An organic light-emitting diode (OLED) display and a method of manufacturing the same are disclosed. In one aspect, the method includes performing a first mask process of forming an active layer of a thin-film transistor (TFT) and a first electrode of a capacitor over a substrate and performing a second mask process of i) forming a gate insulating layer and ii) forming a gate electrode of the TFT and a second electrode of the capacitor over the gate insulating layer. The method also includes performing a third mask process of i) forming first and second interlayer insulating layers and ii) removing portions of the first and second interlayer insulating layers so as to form a contact hole that exposes a portion of the active layer. The method also includes performing a fourth mask process of forming a pixel electrode over the second interlayer insulating layer.

Abstract: A method of forming a thin film, the method including: disposing a resist portion on a substrate, the resist portion including: a first region including a first upper surface; and a second region including a second upper surface, the first upper surface disposed higher than the second upper surface and forming a step; disposing a first protection layer covering the resist portion; exposing the first upper surface; removing the first region; disposing a first thin film on the substrate; disposing a second protection layer covering the first thin film; exposing the second upper surface; removing the second region; disposing a second thin film on the substrate; and removing the first protection layer and the second protection layer.

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

Abstract: A method of fabricating a polarizing member includes: sequentially disposing a metal layer and a preliminary pattern layer on a base substrate including a display area and a non-display area; forming a patterned resin layer on the preliminary pattern layer in the display area, the patterned resin layer including patterns formed on a surface of the patterned resin layer; surface-treating the preliminary pattern layer and the patterned resin layer; forming a mask pattern including a photoresist material on the preliminary pattern layer disposed in the non-display area; forming preliminary patterns on the preliminary pattern layer using the patterned resin layer; and forming a wire grid polarizing unit in the display area by etching the metal layer using the preliminary pattern and the mask pattern as a polarizing pattern.

Abstract: An organic light emitting diode display device comprises: first and second substrates facing and spaced apart from each other; a gate line and a data line on the first substrate, the gate line and the data line crossing each other to define a plurality of pixel regions; at least one thin film transistor coupled to the gate line and the data line; a light emitting diode coupled to the at least one thin film transistor, the light emitting diode including a first electrode, an emitting layer and a second electrode; and a passivation layer on the light emitting diode, the passivation layer having a smaller area than the second electrode.

Abstract: A display apparatus includes a plurality of pixels, a signal transmission line, a pad and a buffer. The pixels display an image. The signal transmission line is electrically connected to at least one of the pixels to transmit a signal. The pad is electrically connected to the signal transmission line. The pad has greater width than the signal transmission line. The buffer is disposed between the signal transmission line and the pad. A first end of the buffer adjacent to the pad is wider than a second end of the buffer adjacent to the signal transmission line.

Abstract: The present invention relates to an organic light emitting display panel and a method of manufacturing the same. In accordance with an aspect of the present invention, there is provided a display panel. The display panel in one example includes a light shielding layer electrically connected to a driving power line on a substrate, and storage capacitors formed on an oxide semiconductor in parallel, insulated from the oxide semiconductor, and overlapped a gate.

Abstract: A semiconductor structure includes an optoelectronic device located in one region of a substrate. A dielectric material is located adjacent and atop the optoelectronic device. A top contact is located within a region of the dielectric material and contacting a topmost surface of the optoelectronic device. A bottom metal contact is located beneath the optoelectronic device and lining a pair of openings located with other regions of the dielectric material, wherein a portion of the bottom metal contact contacts an entire bottommost surface of the optoelectronic device.

Abstract: Inverted optical device. In accordance with an embodiment of the present invention, a plurality of piggyback substrates are attached to a carrier wafer. The plurality of piggyback substrates are dissimilar in composition to the carrier wafer. The plurality of piggyback substrates are processed, while attached to the carrier wafer, to produce a plurality of integrated circuit devices. A flip wafer is attached to the plurality of light emitting diodes, away from the carrier wafer and the carrier wafer is removed. The plurality of light emitting diodes may be singulated to form individual light emitting diode devices.

Abstract: An optical deflecting device includes a mirror having a reflecting surface and a support unit to support the mirror. The support unit includes a first drive unit. The first drive unit includes a plurality of continuously meandering first beams and a plurality of first piezoelectric members respectively provided to the plurality of first beams to swing the mirror around a first axis to deflect light incident on the reflecting surface of the mirror. Two voltages having non-similar waveforms are respectively applied in parallel to each two of the first piezoelectric members respectively provided to adjacent two of the first beams.

Abstract: To provide a display device including a capacitor whose charge capacity is increased while improving the aperture ratio, provide a display device including a capacitor whose charge capacity can be increased while improving the transmittance of a pixel portion, and provide a display device which consumes low power, the display device includes a transistor including a first oxide semiconductor film in a channel formation region, a second oxide semiconductor film formed over a surface over which the first oxide semiconductor film is formed, a pixel electrode electrically connected to the transistor, and a light-transmitting capacitor in which a dielectric film is provided between two electrodes of a pair. One electrode corresponds to the second oxide semiconductor film, and the other electrode corresponds to the pixel electrode. The second oxide semiconductor film has a smaller thickness than the first oxide semiconductor film.

Abstract: A method of fabricating a display substrate includes forming a gate electrode on a substrate, forming a gate insulating layer to cover the gate electrode, forming an active layer on the gate insulating layer, forming a metal layer on the active layer, forming a first mask pattern on the metal layer to face a first region of the active layer, forming a second mask pattern on the metal layer to face a second region and a third region of the active layer, etching the metal layer and the active layer using the first and second mask patterns as an etch mask to form a metal pattern and an active pattern, removing the first mask pattern, and etching the metal pattern using the second mask pattern as an etch mask to form a source electrode and a drain electrode.

Abstract: A method of manufacturing a thin-film transistor includes: forming an oxide semiconductor pattern including a first region and a second region on a substrate; forming an insulation film on the substrate to cover the oxide semiconductor pattern; removing the insulation film on the second region through patterning; increasing carrier density of the first region of the oxide semiconductor pattern through an annealing process; forming a gate electrode on the insulation film so that the gate electrode is insulated from the oxide semiconductor pattern and overlaps the second region; and forming a source electrode and a drain electrode to be insulated from the gate electrode and contact the first region.

Abstract: Embodiments of the present disclosure are directed towards techniques and configurations for interconnect structures embedded in a package assembly including a bridge. In one embodiment, a package assembly may include a package substrate, a bridge embedded in the package substrate and including a bridge substrate, and an interconnect structure including a via extending through the package substrate into a surface of the bridge substrate and configured to interface with a conductive feature disposed on or beneath the surface of the bridge substrate. The interconnect structure may be configured to route electrical signals between the conductive feature and a die mounted on the package substrate. Other embodiments may be described and/or claimed.

Abstract: The present invention is a method of manufacturing an organic EL display device including a display part arranged with a plurality of pixels including an organic EL light emitting layer, and a terminal part arranged with a plurality of terminals each connected to the organic EL light emitting layer respectively, the method comprising forming a TFT drive circuit layer controlling the organic EL light emitting layer and forming the plurality of terminals connected to the TFT drive circuit layer on a first substrate; forming the organic EL light emitting layer connected to the TFT drive circuit layer over the TFT drive circuit layer; forming a sealing film over the organic EL light emitting layer; adhering a second substrate covering the display part in a position corresponding to the first substrate; forming a touch panel sensor substrate and an electrode layer over the second substrate; and exposing the plurality of terminals by etching a part of the sealing film.

Abstract: An array substrate includes: a substrate; a thin film transistor including a gate electrode, an oxide semiconductor layer and source and drain electrodes, wherein a first insulating layer of an inorganic insulating material is disposed between the gate electrode and the oxide semiconductor layer, and wherein a second insulating layer of an inorganic insulating material is disposed between the oxide semiconductor layer and the source and drain electrodes; a passivation layer on the thin film transistor; a first electrode on the passivation layer in the pixel region; and a first hydrogen absorbing layer on at least one of top and bottom surfaces of the first insulating layer, top and bottom surfaces of the second insulating layer and top and bottom surfaces of the passivation layer, the first hydrogen absorbing layer including plurality of particles spaced apart from each other and including one of nickel, palladium and platinum.

Abstract: Provided are an organic light emitting display apparatus and a method of manufacturing the same. The organic light emitting display apparatus includes: a thin film transistor (TFT) substrate including a plurality of thin film transistors, an organic light-emissive device on the TFT substrate, and an encapsulation layer on the TFT substrate and the organic light-emissive device, the encapsulation layer being configured to cover the organic light-emissive device, the encapsulation layer including a hybrid material including: a block copolymer, and functionalized graphene.

Abstract: A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer layer. The QD-in-QW structure has QDs embedded in one or more QWs. The QD-in-QW structure can include at least one template/emission substructure pair separated by a barrier layer, the template substructure having smaller size QDs than the emission substructure. A plurality of QD-in-QW structures can be provided to support the processing (emission, absorption, amplification) of electromagnetic radiation of different characteristic wavelengths (such as optical wavelengths in range from 1300 nm to 1550 nm).

Abstract: Provided is a method of manufacturing an organic light emitting display device. The method includes: providing a first substrate including: a display portion, and a non-display portion, forming a thin film transistor (TFT) and an organic light emitting diode (OLED) in the display portion of the first substrate, providing a pad portion including: at least one pad contact portion at the non-display portion and electrically connected to the TFT, and a pad insulating portion between adjacent pad contact portions, providing an anti-moisture insulation layer entirely covering the first substrate, adhering an encapsulating substrate onto the anti-moisture insulation portion in correspondence with the display portion, and removing the anti-moisture insulation layer, at the pad contact portion, using a laser.

Abstract: An OLED display device includes a first oxide semiconductor layer including first to fourth regions; a first gate electrode on a first insulating layer and the first oxide semiconductor layer, and completely overlapping the first region; a first storage electrode extending from the first gate electrode and overlapping the second region; a second insulating layer covering the first gate electrode and the first storage electrode and exposing the third and fourth regions; first source and drain electrodes on the second insulating layer and contacting the third and fourth regions; and an emitting diode connected to the first drain electrode, wherein a portion of the second region at an edge of the first storage electrode except a center of the first storage electrode is conductive to form a second storage electrode, and the first and second storage electrodes and the first insulating layer constitute a first storage capacitor.

Abstract: A manufacturing method of an organic light emitting display device is disclosed which includes: forming a thin film transistor on each sub-pixel region which is defined in a substrate; forming a passivation layer on the substrate provided with the thin film transistor; forming a first electrode of an organic light emitting diode in each sub-pixel region of the passivation layer; forming a bank pattern in boundaries of the sub-pixel region of the passivation layer; forming a photoresist pattern, which exposes a first sub-pixel region, on the bank pattern; forming an organic light emission layer on the first electrode within the first sub-pixel region and an organic material layer on the photoresist pattern by depositing an organic material on the entire surface of the substrate provided with the photoresist pattern; and removing the photoresist pattern and the organic material pattern using a detachment film.

Abstract: A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap.

Abstract: Provided is an organic EL device having high reliability, wherein decrease of the luminance due to the generation of a gas such as water vapor is suppressed. This organic EL device is provided with: an interlayer insulating film that is formed on a substrate; a lower electrode that is formed above the interlayer insulating film so as to correspond to a light emitting region; a light emitting layer that is formed on the lower electrode in the light emitting region; and an upper electrode that is formed on the light emitting layer. A gap is formed between the interlayer insulating film and the lower electrode.

Abstract: A display device according to the present disclosure includes: a first substrate including a front surface and a rear surface, the front surface defining thereon a first region, a second region, and a third region, the rear surface defining thereon a fourth region, a fifth region, and a sixth region respectively opposing the first region, the second region and the third region; a display element provided on the first region; a wire provided on the second region and electrically connected to the display element; a driving element provided above the third region; and a second substrate provided to be in contact with the fourth region, the fifth region, and the six region, and being composed of a material with higher rigidity than the first substrate, a portion thereof in contact with the sixth region having a smaller thickness than a portion thereof in contact with the fourth region.

Abstract: A display device is provided. The display device includes a substrate including a plurality of pixel areas; a thin film transistor disposed on the substrate; a first insulating layer disposed on the thin film transistor; a pixel electrode connected to the thin film transistor and disposed on the first insulating layer; a common electrode separated from the pixel electrode with a microcavity interposed therebetween; a second insulating layer disposed on the common electrode; a roof layer disposed on the second insulating layer; a hydrophobic layer disposed on the roof layer and including a plurality of protrusions; an injection hole disposed in the common electrode, the second insulating layer, and the roof layer, the injection hole exposing a portion of the microcavity; a liquid crystal layer for filling the microcavity; and an overcoat formed on the roof layer and covering the injection hole, so as to seal the microcavity.

Abstract: An organic light-emitting diode (OLED) display and method of manufacturing the same are disclosed. In one aspect, the OLED display includes a substrate, a thin film transistor (TFT) formed over the substrate, and a first pixel defining layer formed over the TFT and having an opening. The OLED display also includes an insulating layer formed in the opening and including a top surface having a dome shape and an OLED formed over the insulating layer.

Abstract: An organic light-emitting diode (OLED) display and a method of manufacturing the OLED display are disclosed. In one aspect, the OLED display includes a substrate including a display region and a peripheral region, a first auxiliary electrode formed in the peripheral region, and a protecting electrode. The protecting electrode can be formed in the display region and the peripheral region, wherein at least a portion of the protecting electrode can be formed above the first auxiliary electrode.