Abstract: A thin film deposition apparatus, a deposition method using the same, and a method of manufacturing an organic light-emitting display apparatus by using the apparatus are provided. A thin film deposition apparatus is provided that includes a chamber containing a substrate holder on which a substrate is mounted, a plurality of rotary shaft units that change rotation and an inclination angle of the substrate holder, and a target unit that supplies a thin film material for formation on the substrate.

Abstract: A foldable display apparatus, a method of manufacturing the same, and a controlling method of the same are disclosed. The foldable display apparatus includes a substrate including a metal thin film and an insulating layer provided on the metal thin film, an organic light-emitting unit formed on the substrate and emitting light in an direction away from the substrate, and a thin film encapsulating layer for encapsulating the organic light-emitting unit. The foldable display apparatus may be folded in a direction such that the metal thin film is exposed.

Abstract: A method of applying a conversion means to an optoelectronic semiconductor chip includes preparing the optoelectronic semiconductor chip having a main radiation face, preparing the conversion means, the conversion means being applied to a main carrier face of a carrier, arranging the conversion means such that it faces the main radiation face and has a spacing relative to the main radiation face, and releasing the conversion means from the carrier and applying the conversion means to the main radiation face by irradiation and heating of an absorber constituent of the conversion means and/or of a release layer located between the conversion means and the carrier with a pulsed laser radiation which passes through the carrier.

Abstract: Light sources with arrangements of multiple LEDs (or other light-emitting devices) disposed at or near the focus of a reflecting optic having multiple segments facilitate varying the angular distribution of the light beam (e.g., the beam divergence) via the drive currents supplied to the LEDs.

Abstract: A display device includes a substrate, an active layer, a gate insulation layer, a gate electrode, an interlayer insulation layer, a clad layer, a source electrode, and a drain electrode. The active layer is disposed on the substrate. The gate insulation layer is disposed on the active layer. The gate electrode is disposed on the gate insulation layer. The interlayer insulation layer is disposed on the gate electrode. A dielectric constant of the interlayer insulation layer is less than a dielectric constant of the gate insulation layer. The clad layer is disposed on the interlayer insulation layer. The source and drain electrodes are disposed on the clad layer.

Abstract: A thin film transistor (TFT) substrate having reduced differences in heights in areas thereof so as to facilitate subsequent processing is disclosed. In one aspect, the TFT substrate includes a substrate having a first area in which a TFT is not disposed and a second area in which a TFT is disposed, a height adjustment layer disposed on the substrate in an area corresponding to at least a part of the first area. The TFT substrate also includes a TFT disposed on the substrate in an area corresponding to the second area.

Abstract: An organic light emitting diode display device includes a first substrate including a display region, wherein a plurality of pixel regions are defined in the display region; a first electrode over the first substrate and in each of the plurality of pixel regions; a first bank on edges of the first electrode and including an insulating material blocking penetration of light; a second bank on the first bank and including an insulating material having a hydrophobic property; an organic light emitting layer on the first electrode and a portion of the first bank; and a second electrode on the organic light emitting layer and covering an entire surface of the display region.

Abstract: A thin-film transistor substrate may include an electrical wiring structure that includes a first electrode, which may be a source electrode, a drain electrode, or a capacitor electrode. The thin-film transistor substrate may further include a first insulating layer that directly contacts a first side of the first electrode. The thin-film transistor substrate may further include a second insulating layer that directly contacts a second side of the first electrode opposite the first side of the first electrode. The thin-film transistor substrate may further include a first filling layer that is disposed between the first insulating layer and the second insulating layer.

Abstract: A flexible display panel including a buffer layer, an active element, a pad, a display device and a signal transmission circuit is provided. The active element is located on the buffer layer. The pad is located in the buffer layer and is electrically connected to the active element. The display device is located on the active element and is electrically connected to the active element, in which the display device includes a pixel electrode, an opposite electrode and a display medium layer located therebetween. The active element and the signal transmission circuit are respectively located at a first surface and a second surface of the buffer layer, the second surface is opposite to the first surface, and the signal transmission circuit is electrically connected to the active element via the pad. A manufacturing method of a flexible display panel is also provided.

Abstract: The present invention relates to an optical device integrated with a driving circuit and a power supply circuit, a method for manufacturing an optical device substrate used therein, and a substrate thereof, which are capable of reducing the overall size and facilitating the handling and management thereof by mounting a plurality of optical elements, driving circuits thereof, and power supply circuits thereof on a single substrate for an optical device having a vertical insulating layer.

Abstract: It is an object to provide a liquid crystal display device capable of displaying a moving image with high image quality by employing a time-division display system (also called a field-sequential system) with the use of a plurality of light-emitting diodes (hereinafter referred to as LEDs) as a backlight. Further, it is an object to provide a liquid crystal display device in which high image quality, full color display, or low power consumption is realized by adjustment of the peak luminance. After a liquid crystal layer is sealed between a pair of substrates, polymer stabilization treatment is performed with the use of UV irradiation from both above and below the pair of substrates at the same time, whereby the polymer included in the liquid crystal layer sandwiched between the pair of substrates is evenly distributed. Thus, a liquid crystal display device is manufactured.

Abstract: A flexible display panel and a method of manufacturing the same. The flexible display panel includes: a flexible panel including a display region and a non-display region, wherein the display region includes an organic light emitting device; a planarization layer disposed on the flexible panel; and a metal-dielectric layer disposed on the planarization layer and including a metal layer and a dielectric layer.

Abstract: A manufacturing method of a display panel including following steps is provided. An active device substrate including a first plate, active devices disposed on the first plate and pixel electrodes electrically connected to the active devices is provided. A display medium substrate including a second plate and a display medium disposed on the second plate is provided. The pixel electrodes are electrically connected to the display medium by a conductor. Moreover, a display panel manufactured by the manufacturing method is also provided.

Abstract: Methods for bonding semiconductor wafers requiring the transfer of electrical and optical signals between the bonded wafers and across the bonding interface. The methods incorporate the formation of both electrical and optical interconnect vias within the wafer bonding interface to transfer electrical and optical signals between the bonded wafers. The electrical vias are formed using multiplicity of metal posts each comprised of multiple layers of metal that are interfused across the bonding surface. The optical vias are formed using multiplicity of optical waveguides each comprised of a dielectric material that interfuses across the bonding interface and having an index of refraction that is higher than the index of refraction of the dielectric intermediary bonding layer between the bonded wafers. The electrical and optical vias are interspersed across the bonding surface between the bonded wafers to enable uniform transfer of both electrical and optical signals between the bonded wafers.

Abstract: A light emitting element includes: a first electrode, a hole injection layer disposed on the first electrode; a hole transport layer disposed on the hole injection layer; a light emitting layer disposed on the hole transport layer, where the light emitting layer includes a light emission host and a light emission dopant; an electron transport layer disposed on the light emitting layer; an electron injection layer disposed on the electron transport layer; and a second electrode disposed on the electron injection layer.

Abstract: A organic light-emitting display apparatus includes a substrate, a thin film transistor disposed on the substrate and including an active layer, a gate electrode, a source electrode and a drain electrode, a pixel electrode electrically connected to the source electrode and the drain electrode, a counter electrode corresponding to the pixel electrode, a light-emitting layer disposed in a plurality of light-emitting regions between the pixel electrode and the counter electrode, a common layer disposed in the light-emitting regions and in a plurality of non-light-emitting regions around the light-emitting regions between the pixel electrode and the counter electrode, and a plurality of partition walls including an insulating material disposed in the common layer.

Abstract: An organic light-emitting display apparatus includes a substrate, a thin film transistor (TFT) disposed on the substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode The organic light-emitting display apparatus further includes a pixel electrode including a first pixel electrode layer, a second pixel electrode layer disposed on the first pixel electrode layer and a third pixel electrode layer disposed on the second pixel electrode layer. The second pixel electrode layer is a metal layer and the third pixel electrode layer is a reflective layer. The organic light-emitting display apparatus further includes an emission layer (EML) disposed on the pixel electrode, and an opposite layer disposed on the EML.

Abstract: Provided is an organic light-emitting display apparatus including a thin-film transistor (TFT) that includes an active layer, a gate electrode, and source/drain electrodes; an organic light-emitting device that includes a pixel electrode which is connected to the TFT, an intermediate layer which includes a light-emitting layer, and an opposite electrode; and an opposite electrode contact unit in which the opposite electrode is electrically connected to a power wiring, wherein, with regard to the power wiring, a surface that contacts the opposite electrode is formed to have an embossed structure.

Abstract: A manufacturing method of an organic light emitting display device is disclosed which includes: forming a thin film transistor on each sub-pixel region which is defined in a substrate; forming a passivation layer on the substrate provided with the thin film transistor; forming a first electrode of an organic light emitting diode in each sub-pixel region of the passivation layer; forming a bank pattern in boundaries of the sub-pixel region of the passivation layer; forming a photoresist pattern, which exposes a first sub-pixel region, on the bank pattern; forming an organic light emission layer on the first electrode within the first sub-pixel region and an organic material layer on the photoresist pattern by depositing an organic material on the entire surface of the substrate provided with the photoresist pattern; and removing the photoresist pattern and the organic material pattern using a detachment film.

Abstract: A flexible display device includes a flexible substrate including a display region and a peripheral region substantially surrounding the display region, the display region including a first display region and a second display region, a first display structure at the first display region of the flexible substrate, the first display structure including nanoparticles, and a second display structure at the second display region of the flexible substrate, the second display structure including silicon.

Abstract: A smart card module includes a carrier; a chip arrangement arranged over a first side of the carrier; and an antenna arranged over a second side of the carrier, wherein the second side of the carrier is opposite the first side of the carrier. The antenna is electrically conductively connected to the chip arrangement in order to transmit electrical signals. The smart card module further includes a display module arranged over the first side of the carrier; and at least one electrical line structure arranged on the first side of the carrier, which electrical line structure electrically conductively connects the chip arrangement and the display module to one another.

Abstract: According to one embodiment, a method of manufacturing a display device, includes preparing a first substrate formed such that a first resin layer is formed on a first support substrate, and thereafter a display element portion and a mounting portion are formed above the first resin layer and a protection layer, which extends from an end portion of the first resin layer along the mounting portion onto the first support substrate, is disposed, preparing a second substrate formed such that a second resin layer is formed on a second support substrate, attaching the first substrate and the second substrate, and mounting a flexible printed circuit board, which is in a state in which the flexible printed circuit board is opposed to the protection layer, on the mounting portion.

Abstract: Provided is an organic light emitting display device. The organic light emitting display device includes: a substrate including a display region and a plurality of peripheral regions adjacent the display region; a display structure disposed in the display region; and a strain gauge disposed in two peripheral regions facing each other among the plurality of peripheral regions.

Abstract: A method serves to produce optoelectronic semiconductor components. A leadframe assemblage includes a number of leadframes. The leadframes each comprise at least two leadframe parts and are connected together at least in part via connecting webs. Electrical connections are attached between neighboring leadframes. A potting body connects the leadframes and the leadframe parts mechanically together. At least some of the connecting webs are removed and/or interrupted, the resulting structure is singulated into the semiconductor components.

Abstract: Disclosed is a liquid crystal display device that includes: first and second substrates; a gate line and a data line on the first substrate, the gate line and the data line crossing each other to define a pixel region; a thin film transistor connected to the gate line and the data line; a color filter layer on the thin film transistor, the color filter layer including red, green and blue color filters each corresponding to the pixel region; a protrusion pattern at a boundary of the pixel region, the protrusion pattern including at least two of the red, green and blue color filters; a pixel electrode on the color filter layer; a first alignment layer on the pixel electrode; a first patterned spacer on the second substrate, the first patterned spacer contacting the first alignment layer over the protrusion pattern; and a liquid crystal layer between the first and second substrates.

Abstract: An organic light emitting display device may include: a cell array comprising gate lines and data lines intersecting each other on a substrate so as to define a plurality of pixel areas, a plurality of thin film transistors formed at intersections between the gate lines and the data lines to correspond to the plurality of pixel areas, and a protective film evenly formed over the substrate to cover the thin film transistors; a plurality of first electrodes formed such that portions of an metal oxide layer corresponding to emission areas of the respective pixel areas, is made conductive, the metal oxide layer evenly disposed on the protective film; a bank constituting the remaining portion of the metal oxide layer in which the first electrodes are not formed and formed so as to have insulating properties; an emission layer formed over the metal oxide layer; and a second electrode formed on the emission layer so as to face the first electrodes.

Abstract: A method of forming a semiconductor device structure. The method comprises forming a block copolymer assembly comprising at least two different domains over an electrode. At least one metal precursor is selectively coupled to the block copolymer assembly to form a metal-complexed block copolymer assembly comprising at least one metal-complexed domain and at least one non-metal-complexed domain. The metal-complexed block copolymer assembly is annealed in to form at least one metal structure. Other methods of forming a semiconductor device structures are described. Semiconductor device structures are also described.

Abstract: Provided is a producing of a surface-emitting laser capable of aligning a center axis of a surface relief structure with that of a current confinement structure with high precision to reduce a surface damage during the producing. The producing of the laser having the relief provided on a laminated semiconductor layer and a mesa structure, the process comprising the steps of: forming, on the layer, one of a first dielectric film and a first resist film having a first pattern for defining the mesa and a second pattern for defining the relief and then forming the other one of the films; forming a second resist film to cover the second pattern and expose the first pattern; and forming the mesa by removing the layer under the first pattern using the second resist film.

Abstract: A three-terminal light emitting device (LED) chip, associated fabrication method, and LED array are provided. The method forms an n-doped semiconductor layer overlying a substrate, an active semiconductor layer overlying the n-doped semiconductor layer, and a p-doped semiconductor layer overlying the active semiconductor layer. A trench is formed through the p-doped and active semiconductor layers, exposing the n-doped semiconductor layer. In one aspect, the trench is formed at least part way, but not completely, through the n-doped semiconductor layer. Then, an LED P electrode is formed overlying a first region of the p-doped semiconductor layer, a diode P electrode is formed overlying a second region of the p-doped semiconductor layer that is separated from the first region of the p-doped semiconductor layer by the trench, and an N electrode is formed overlying a top surface of the exposed n-doped semiconductor layer in the trench, shared by the LED and diode.

Abstract: An organic light-emitting display apparatus including a thin film transistor including a gate electrode, an active layer insulated from the gate electrode, a source electrode and a drain electrode insulated from the gate electrode and contacting the active layer, and an insulating layer disposed between the source and drain electrodes and the active layer. The organic light-emitting display apparatus further includes an organic light-emitting diode including a first electrode, a second electrode and an organic layer disposed between the first electrode and the second electrode. The organic light-emitting diode is electrically connected to the thin film transistor. The drain electrode overlaps with a ortion of the organic light-emitting diode.

Abstract: An organic light emitting diode display includes a substrate, a planarization layer disposed on the substrate, a first electrode disposed on the planarization layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, wherein an uneven pattern is formed on a top surface of the planarization layer, the uneven pattern comprises a strip line having a plurality of thicknesses and widths, and a thickness of the strip line becomes smaller as a distance from a center portion of the first electrode becomes larger.

Abstract: A organic EL display panel includes an inter-layer insulation film, a pixel electrode, auxiliary wiring, a partition layer, an organic light-emitting layer, and a common electrode. The inter-layer insulation film has at least one paired concave portion and non-concave portion disposed in a region over the auxiliary wiring, a top face of the concave portion being concave with respect to a top face of the non-concave portion, and the auxiliary wiring includes a part over the concave portion and a part over the non-concave portion, a top face of the part over the concave portion being concave with respect to a top face of the part over the non-concave portion.

Abstract: An organic light emitting diode display device is disclosed. The device includes, for example, a thin film transistor with an active layer on a substrate, a gate electrode, a source electrode, and a drain electrode, a pixel electrode formed on the same layer as the gate electrode, an electrode pattern partially exposing the pixel electrode and formed on the pixel electrode, a pixel electrode contact formed between the electrode pattern and the drain electrode and electrically connected to the drain electrode, a pixel defining film exposing the pixel electrode and formed to cover the drain electrode and the source electrode, an intermediate layer formed on the exposed pixel electrode and comprising an emissive layer, and an opposite electrode formed opposite the pixel electrode to at least partially cover the intermediate layer. A method of manufacturing the device is also disclosed.

Abstract: An organic light emitting display device wherein organic and inorganic films are alternately stacked, and the inorganic film is patterned to form an outgassing route, through which gas is released from the organic film, and a manufacturing method thereof is herein.

Abstract: A display apparatus includes a base substrate, a data line, and a pixel. The data line is disposed on the base substrate to transmit a data signal and has a multi-layer structure including at least three conductive layers stacked one on another. The data line includes a lower conductive layer, an intermediate conductive layer, and an upper conductive layer. The lower conductive layer is disposed on the base substrate, the intermediate conductive layer is disposed on the lower conductive layer and includes copper and aluminum, and the upper conductive layer is disposed on the intermediate conductive layer and includes copper. The pixel is driven in response to the data signal from the data line.

Abstract: A method of manufacturing an organic light emitting display panel is disclosed. The method may include forming a thin film layer using an open mask. The open mask may include forming a half-etching portion disposed over at least a portion of a non-display area. The non-display area may include a portion in which a first line crosses a second line. In a final product, a distance between a substrate and a lower surface of the half-etching portion may be longer than the distance between the substrate and a lower surface of a non-opening portion. Because of the half-etching portion, lines disposed in the non-display area may be prevented from contacting the open mask.

Abstract: An OLED panel having a plurality of OLED circuit elements is provided. Each OLED circuit element may include a fuse or other component that can be ablated or otherwise opened to render the component essentially non-conductive. Each OLED circuit element may comprise a pixel that may include a first electrode, a second electrode, and an organic electroluminescent (EL) material disposed between the first and the second electrodes. Each of the OLED circuit elements may not be electrically connected in series with any other of the OLED circuit elements.

Abstract: A method of manufacturing an organic light emitting display device includes: providing a capacitor on a substrate; providing a protection layer on the capacitor; providing an organic light emitting diode on the protection layer; and providing an encapsulation layer which encapsulates the organic light emitting diode. The providing the capacitor includes: providing a bottom electrode including an oxide semiconductor, on the substrate; providing an insulation layer on the substrate and overlapping the bottom electrode; annealing the bottom electrode to increase a carrier density of the bottom electrode; and providing an intermediate electrode on the insulation layer and overlapping the bottom electrode.

Abstract: A light-emitting component includes: plural light-emitting thyristors, each including a semiconductor layer stack laminating first to fourth semiconductor layers in order, and emitting light at a predetermined wavelength in an ON state; plural transfer thyristors, each including the semiconductor layer stack, the plural transfer thyristors shifting to the ON state for transferring the ON state to set corresponding light-emitting thyristors in a light-enabled state; and plural coupling transistors, each including the first to third semiconductor layers in the semiconductor layer stack and provided to couple former and latter transfer thyristors, the first and second semiconductor layers of each coupling transistor being continued to the first and second semiconductor layers of the former transfer thyristor, and the third semiconductor layer of each coupling transistor being continued to the third semiconductor layer of the former transfer thyristor with a thickness to be depleted in a state where no voltage is

Abstract: A thin-film transistor array substrate, an organic light-emitting display having the same, and a method of manufacturing the organic light-emitting display are disclosed. In one embodiment, the thin-film transistor array substrate includes a buffer layer formed on a substrate, a first insulating layer formed on the buffer layer, a pixel electrode formed on the first insulating layer using a transparent conductive material, an intermediate layer that covers an upper side and outer side-surfaces of the pixel electrode and includes a organic light-emitting layer, a gap formed by etching the first insulating layer and the buffer layer at a peripheral of the pixel electrode, and a facing electrode that is formed on an upper side and outer side-surfaces of the pixel electrode to cover the intermediate layer and the gap.

Abstract: An organic light emitting diode display device, comprises: a thin film transistor on a substrate; a first insulating layer on the thin film transistor; a connecting electrode connected to the thin film transistor and a first auxiliary electrode on the first insulating layer; a second insulating layer on the connecting electrode and the first auxiliary electrode; an anode connected to the connecting electrode and a second auxiliary electrode spaced apart from the anode and connected to the first auxiliary electrode on the second insulating layer; a bank layer having a first contact hole exposing the anode and a second contact hole exposing the second auxiliary electrode on the anode and the second auxiliary electrode; an organic emitting layer on the anode in the first contact hole; and a cathode electrically connected to the second auxiliary electrode on the organic emitting layer.

Abstract: An improved LED module packaging structure with an IC chip includes a power input end in a packaging groove of a carrier stand connected to a zener diode and a power input port of the IC chip acquiring an operating power from the zener diode, so that the LED module applied to a full-color or self-color illuminant of central control utilizes the zener diode connected to the power input end within the packaging groove of the carrier stand to lower or modulate the voltage of an external power. While the IC chip receives a data signal from the data signal input end, the IC chip receives a matched operating voltage via the zener diode to drive the LED chip to shine, thereby attaining a long transmission of the central control easily.

Abstract: A method of manufacturing a thin-film transistor includes: forming an oxide semiconductor pattern including a first region and a second region on a substrate; forming an insulation film on the substrate to cover the oxide semiconductor pattern; removing the insulation film on the second region through patterning; increasing carrier density of the first region of the oxide semiconductor pattern through an annealing process; forming a gate electrode on the insulation film so that the gate electrode is insulated from the oxide semiconductor pattern and overlaps the second region; and forming a source electrode and a drain electrode to be insulated from the gate electrode and contact the first region.

Abstract: According to an aspect of the present invention, there is provided a back plane for a flat-panel display device and a method of manufacturing the same. The back plane including: a substrate; a gate electrode on the substrate; a first insulation layer on the substrate and covering the gate electrode; a semiconductor layer on the first insulation layer and corresponding to the gate electrode; and a source electrode and a drain electrode on the semiconductor layer and electrically coupled to respective portions of the semiconductor layer. Here, the semiconductor layer includes indium, tin, zinc, and gallium, and an atomic concentration of the gallium is from about 5% to about 15%.

Abstract: The present application relates to a method for fabricating an organic light emitting display device, comprising: forming a drive thin film transistor on a substrate at a non-light emission region; forming a protective layer on the substrate; forming a color filter on the protective layer; forming a planarizing layer on a protective layer including the color filter; selectively removing the protective layer and the light compensating layer to form a first drain contact hole which exposes a drain electrode of the drive thin film transistor; forming a light compensating layer on the planarizing layer to have a second drain contact hole which exposes the first contact hole, and a dummy hole to expose the planarizing layer; and forming an organic light emitting element on the light compensating layer to be in contact with the drain electrode through the first and second drain contact holes.

Abstract: An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern.

Abstract: A double-sided organic light-emitting diode and manufacturing method thereof, and a display device using double-sided organic light-emitting diode pixel configuration are described. The double-sided organic light-emitting diode includes a first electrode, a first organic semiconductor layer; disposed on the first electrode, a shared electrode disposed on the first organic semiconductor layer and electrically connected to the output terminal of a thin film transistor; a second organic semiconductor layer disposed on the shared electrode; and a second electrode disposed on the second organic semiconductor. The first electrode, the shared electrode and the second electrode are electrically insulated from each other, and two organic light-emitting diodes in the double-sided organic light emitting diode can be independently controlled.

Abstract: A thin film transistor (TFT) array substrate including a first element layer on the substrate including a first TFT, a first planarization layer configured to cover the first element layer, and a second element layer on the first planarization layer including a capacitor.

Abstract: A semiconductor device includes a pixel portion having a first thin film transistor and a driver circuit having a second thin film transistor. Each of the first thin film transistor and the second thin film transistor includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer. Each of the layers of the first thin film transistor has a light-transmitting property. Materials of the gate electrode layer, the source electrode layer and the drain electrode layer of the first thin film transistor are different from those of the second transistor, and each of the resistances of the second thin film transistor is lower than that of the first thin film transistor.

Abstract: An electronic device may have a flexible display with portions that are bent along a bend axis. The display may have display circuitry such as an array of display pixels in an active area. Contact pads may be formed in an inactive area of the display. Signal lines may couple the display pixels to the contact pads. The signal lines may overlap the bend axis in the inactive area of the display. During fabrication, an etch stop may be formed on the display that overlaps the bend axis. The etch stop may prevent over etching of dielectric such as a buffer layer on a polymer flexible display substrate. A layer of polymer that serves as a neutral stress plane adjustment layer may be formed over the signal lines in the inactive area of the display. Upon bending, the neutral stress plane adjustment layer helps prevent stress in the signal lines.