Abstract: In various embodiments, a method for forming a device may be provided. The method may include forming a contact layer at least partially on a substrate. The method may also include forming a device structure adhered to the contact layer. In addition, the method may include depositing a transfer medium such that the device structure is at least partially covered by the transfer medium. The method may further include solidifying the transfer medium. The method may also include separating the contact layer, the device structure and the transfer medium from the substrate. The contact layer may have a greater adhesion to the device structure than to the substrate.

Abstract: Photonic devices monolithically integrated with CMOS are disclosed, including sub-100 nm CMOS, with active layers comprising acceleration regions, light emission and absorption layers, and optional energy filtering regions. Light emission or absorption is controlled by an applied voltage to deposited films on a pre-defined CMOS active area of a substrate, such as bulk Si, bulk Ge, Thick-Film SOI, Thin-Film SOI, Thin-Film GOI.

Abstract: The present invention provides a method for manufacturing an organic electroluminescence device and an organic electroluminescence device manufactured with the same. The method includes (1) providing a substrate (20); (2) forming a first electrode (21) on the substrate (20); (3) forming a gate insulation layer (22) on the first electrode (21) and the substrate (20); (4) forming a second electrode (23) on the gate insulation layer (22), where the second electrode (23) includes a second metal layer (224) and a transparent conductive layer (222); (5) forming an oxide semiconductor layer (24) on the second electrode (23) and the gate insulation layer (22); (6) forming an organic planarization layer (25) on the oxide semiconductor layer (24) and the second electrode (23); (7) with the organic planarization layer (25) serving as a mask, etching the second metal layer (224) of the second electrode (23) to expose the transparent conductive layer (222) so as to form a transparent electrode (26).

Abstract: An oxide semiconductor device includes a gate electrode on a substrate, a gate insulation layer on the substrate, the gate insulation layer having a recess structure over the gate electrode, a source electrode on a first portion of the gate insulation layer, a drain electrode on a second portion of the gate insulation layer, and an active pattern on the source electrode and the drain electrode, the active pattern filling the recess structure.

Abstract: A display apparatus includes a first substrate that includes a display area in which pixels are arranged and a non-display area surrounding the display area, a second substrate disposed to face the first substrate, and a sealing member disposed in the non-display area to attach the second substrate to the first substrate. The first substrate includes a base substrate, a plurality of inorganic insulating layers disposed on the base substrate in the non-display area, and an organic layer disposed on the inorganic insulating layer.

Abstract: Provided are an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes: an emission unit including an organic light emitting diode, a pixel circuit unit including: a circuit configured to drive the emission unit, and a line configured to apply a signal to the circuit, and a light blocking layer covering the pixel circuit unit, and configured to block light input to the pixel circuit unit, and a repair part disposed in the light blocking layer, the repair part being configured for repairing the line when a defect occurs in a pixel that includes the pixel circuit unit.

Abstract: Disclosed is a flexible display device and method of manufacturing the same in which a method of manufacturing a flexible display device may include forming a sacrificial layer on a support substrate, the sacrificial layer including at least one barrier layer and a separation layer, the barrier layer having a higher hydrogen content than that of the separation layer; forming a first flexible substrate on the support substrate provided with the sacrificial layer; forming a plurality of device elements on the first flexible substrate; and irradiating a laser onto the sacrificial layer through the support substrate and separating the support substrate from the first substrate.

Abstract: An organic light emitting diode (OLED) display and a method for manufacturing the same are described. An exemplary embodiment provides an OLED display including: a substrate including a plurality of pixel areas; a light emitting unit including an organic light emitting diode and a plurality of first thin film transistors, the light emitting unit being formed in each of the plurality of pixel areas; and a sensor unit including a photosensor and a plurality of second thin film transistors, the sensor unit being formed in at least some of the plurality of pixel areas. Each of the plurality of first thin film transistors and the plurality of second thin film transistors includes an oxide semiconductor layer, and the photosensor includes an oxide photoelectric conversion layer that are made of a same material on a same layer as the oxide semiconductor layer.

Abstract: An organic light emitting diode display includes a substrate, a planarization layer disposed on the substrate, a first electrode disposed on the planarization layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, wherein an uneven pattern is formed on a top surface of the planarization layer, the uneven pattern comprises a strip line having a plurality of thicknesses and widths, and a thickness of the strip line becomes smaller as a distance from a center portion of the first electrode becomes larger.

Abstract: A method of manufacturing an EL display device having a panel part is such that a constituent element of the panel part is formed through film formation in a vacuum atmosphere. After the constituent element of the panel part has been formed on a substrate in the vacuum atmosphere, the post-film-formation substrate is placed on standby during transporting the substrate from a place in the vacuum atmosphere to a place in an atomospheric-pressure atmosphere. The placing the substrate on standby includes a first intake period and a second intake period. During the first intake period, an intake gas is gradually introduced to change the atmosphere, from the first vacuum atmosphere to the second vacuum atmosphere that exhibits a lower degree of vacuum than that of the first vacuum atmosphere. During the second intake period, the intake gas is introduced to change the atmosphere, from the second vacuum atmosphere to the atmospheric-pressure atmosphere.

Abstract: The organic light emitting display device includes a flexible substrate, a thin-film transistor on the flexible substrate, a first anode on the thin-film transistor, a second anode on the same plane with the first anode and spaced apart from the first anode so as to surround the first anode, an organic light emitting layer on the first anode and the second anode, and a cathode on the organic light emitting layer. The second anode includes an opening where the first anode is encompassed therein. The shape of the first anode and the second anode and arrangement thereof reduces a segment length of an anode in a bending direction of the organic light emitting display device, and, thus, occurrence of cracks in the anode can be minimized.

Abstract: A method of manufacturing an EL display device having a panel part that comprises a light emitting part in which a plurality of pixels are arrayed, and a thin-film transistor array device to control light emission of the light emitting part. The method includes the following steps: forming the panel part on a substrate, and then forming a sealing layer to cover the panel part. The step of forming the sealing layer is performed by forming a film configuring the sealing layer, with the mask being disposed over base substrate. Mask includes contact part in contact with the base substrate, and edge part disposed over the panel part with a gap between the edge part and the panel part.

Abstract: A method of manufacturing an EL display device having a panel part includes a step of forming film of an element constituting the panel part, by using a vapor deposition equipment. The vapor deposition equipment is equipped with crucible configured to accommodate vapor deposition material, metal case configured to dispose the crucible therein, and heater configured to heat vapor deposition material in the crucible. Case includes container and lid. Container is configured to accommodate crucible with a gap between the container and crucible. Lid is configured to be removably attached to an opening of container, and includes a jetting port through which vapors of vapor deposition material jet out.

Abstract: A flexible display device includes a flexible base substrate, a semiconductor pattern, a gate insulation layer, and a gate electrode on the base substrate, the gate insulation layer between the semiconductor pattern and the gate electrode, a conductive pattern including a source electrode and a drain electrode, the source and drain electrodes overlapping respective sides of the semiconductor pattern, an insulation interlayer on the gate insulation layer, between the gate electrode and the conductive pattern, and having at least one stress relief opening at a region exposed by the conductive pattern, and a protection layer on the insulation interlayer and filling the stress relief opening.

Abstract: In an aspect, an organic light emitting diode display including: a substrate; a first electrode and an auxiliary electrode positioned on the substrate and separated from each other; an absorption electrode positioned on the auxiliary electrode; an organic emission layer positioned on the first electrode and having a contact hole exposing the auxiliary electrode and the absorption electrode; and a second electrode positioned on the organic emission layer and connected to the auxiliary electrode and the absorption electrode through the contact hole is provided. In an aspect, the organic light emitting diode (OLED) display may minimize the voltage drop of the driving power passing through the large-sized electrode of the thin film for driving the organic emission layer, and may simplify the removal process of the organic emission layer on the auxiliary electrode by adding the absorption electrode on the auxiliary electrode.

Abstract: An organic light emitting display device and manufacturing method thereof are disclosed. One inventive aspect includes a first substrate, a second substrate, a pixel unit, a circuit unit, a sealing member and a radiation unit. The pixel unit is formed on the first substrate and comprises an organic light emitting device and a thin-film transistor (TFT). The radiation unit includes radiation fins formed in the sealing member and a radiation layer contacting first ends of the radiation fins.

Abstract: An organic light emitting device and a method of fabricating the same includes a first substrate; a thin film transistor (TFT) on the first substrate; a planarization layer on the TFT; an organic light emitting diode (OLED) on the planarization layer; a passivation layer on the OLED; a second substrate on the passivation; and a hydrogen capturing material between the first and the second substrates to prevent oxidation of materials forming the TFT.

Abstract: An organic light-emitting display device according to one embodiment of the present disclosure includes a substrate, a thin-film transistor formed on the substrate, a planarization layer formed on the thin-film transistor, an organic light-emitting element formed on the planarization layer, the emitting element including an organic light-emitting layer and a cathode, and a lower auxiliary wiring between the organic light-emitting element and the planarization layer, the wiring electrically connected with the cathode.

Abstract: An organic light-emitting display apparatus and a method for forming the same, the apparatus including a transparent protection layer on a substrate; a via insulation layer on the transparent protection layer; a pixel electrode on the via insulation layer; an opposite electrode on the pixel electrode; and an intermediate layer between the pixel electrode and the opposite electrode, the intermediate layer including an organic emission layer.

Abstract: There is provided a manufacturing method of an LED module including: forming an insulating film on a substrate; forming a first ground pad and a second ground pad separated from each other on the insulating film; forming a first division film that fills a space between the first and second ground pads, a second division film deposited on a surface of the first ground pad, and a third division film deposited on a surface of the second ground pad; forming a first partition layer of a predetermined height on each of the division films; sputtering seed metal to the substrate on which the first partition layer is formed; forming a second partition layer of a predetermined height on the first partition layer; forming a first mirror connected with the first ground pad and a second mirror connected with the second ground pad by performing a metal plating process to the substrate on which the second partition layer is formed; removing the first and second partition layers; connecting a zener diode to the first mirror

Abstract: A display device, includes: a first substrate; an organic planarizing film that is made of an organic insulating material, and arranged on the first substrate; an electrode that comes in contact with a part of a surface of the organic planarizing film opposite to the first substrate side; an inorganic bank that is made of an inorganic insulating material, covers an end of the electrode, and comes in contact with a part of a surface of the organic planarizing film opposite to the first substrate side; an OLED layer that covers a side of the electrode and the inorganic bank opposite to a side that comes in contact with the organic planarizing film, and partially comes in contact with the organic planarizing film; and a sealing film that is configured to cover a side of the OLED layer opposite to the organic planarizing film side.

Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.

Abstract: This disclosure discloses a method of manufacturing a light-emitting device, comprising proving a single growth substrate having a first major surface and a second major surface; forming a plurality of light-emitting stacks on the first major surface, wherein the light-emitting stacks are electrically connected to each other in series via a first electrical connecting structure; forming an electronic device on the second major surface; and forming a second electrical connecting structure extending from the first major surface to the second major surface and electrically connecting the first light-emitting stacks and the electronic device, wherein the electronic device comprises a resistance, an inductance, capacitance, or a rectifying device, and wherein the material of the resistance comprises tantalum nitride (TaN), silicon-chromium alloy (SiCr), or nickel-chromium alloy (NiCr).

Abstract: A display device and method for manufacturing same are provided. The display device including a plurality of unit pixels disposed in the matrix on a substrate, each of the unit pixels has a thin film transistor at a place other than the center of the pixel, and unit pixels in a first row and unit pixels in a second row adjacent to the first row are arranged so that they are symmetric with respect to a first virtual plane orthogonal to a main surface of the substrate.

Abstract: A method of manufacturing a flexible display apparatus includes sequentially forming a flexible substrate, a thin film transistor (TFT), an organic light-emitting diode (OLED) including a first electrode, an intermediate layer, and a second electrode, and a first attachment layer on a carrier substrate, sequentially forming a deposition layer and a second attachment layer on a sealing film, attaching the carrier substrate and the sealing film to each other such that the sealing film covers flexible substrate on the carrier substrate, sealing the first and second attachment layers, laminating the carrier substrate and the sealing film, and separating the sealing film and the flexible substrate from the carrier substrate.

Abstract: A method of manufacturing a thin film transistor (TFT) substrate in which a TFT including an oxide semiconductor layer is formed, the method including: forming an insulating layer to cover the oxide semiconductor layer; and forming an opening in the insulating layer, wherein the insulating layer includes a first film, a second film which is provided above the first film and is an aluminum oxide film, and a third film which is provided above the second film and is a film including silicon, and the forming of an opening includes: forming a resist pattern above the third film; processing the third film by dry etching; and processing the second film by wet etching.

Abstract: An organic light-emitting display apparatus includes a thin film transistor (TFT) including an active layer, a gate electrode, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the gate electrode and the source and drain electrodes, a capacitor including a first electrode on a same layer as the active layer and a second electrode on a same layer as the gate electrode, a first contact layer of a same material as the second electrode, a second contact layer on the first contact layer, the second contact layer being of a same material as the gate electrode, a pixel electrode that contacts an edge of the first contact layer and is on an opening in the second insulating layer, an organic emission layer on the pixel electrode, and a counter electrode on the organic emission layer.

Abstract: A liquid crystal display has liquid crystal containerizing micro-cavities monolithically integrally formed as part of a thin film transistors substrate thereof where mouths of the micro-cavities are sealed shut by material of a capping layer and where the capping layer is patterned to have relatively thicker regions and comparatively thinner or devoid of capping material regions interposed between the thicker regions for thereby providing the capping layer with improved flexibility, the relatively thicker regions being disposed over the mouths of the microcavities.

Abstract: A lighting device may include a mounting board with first and second opposed faces and vias extending therethrough, one or more light radiation sources mounted on the first face of the mounting board, drive circuitry for the light radiation source mounted on the second face of the mounting board, with electrically conductive lines between the light radiation source and the drive circuitry passing through said vias, a vat-like holder housing the mounting board with the light radiation source and the drive circuitry mounted thereon. The holder has cavities for receiving therein the drive circuitry with the first face of the mounting board and the light radiation source mounted thereon facing outwardly of the holder. Over the first face of the mounting board at least one sealing layer is applied, which ensures an IP grade protection of device.

Abstract: The present invention provides an active organic electroluminescence device back panel and a manufacturing method thereof. The device back panel includes: a substrate (20), a plurality of active TFT pixel arrays formed on the substrate (20), and organic planarization layers (228), organic electroluminescence electrodes (229), pixel definition layers (25), and support bodies (28) formed on the active TFT pixel arrays. Each of the active TFT pixel arrays includes a driving TFT (22) and a switch TFT (24). The driving TFT (22) has a gate insulation layer (220) that has a thickness greater than a thickness of a gate insulation layer (240) of the switch TFT (24). Through thickening the gate insulation layer of the driving TFT, the gate capacitance of the driving TFT can be reduced and the sub-threshold swing of the driving TFT is increased to realize well definition of grey levels.

Abstract: A manufacturing method of an organic light emitting diode (“OLED”) display includes: forming a contact pattern on a panel region of a surface of a board glass, where the board glass includes the panel region, and a peripheral area which surrounds the panel region; contacting the paper glass with a surface of the contact pattern corresponding to the panel region and the surface of the board glass corresponding to the peripheral area; adhering the surface of the board glass corresponding to the peripheral area to a surface of the paper glass; forming an organic light emitting element on the paper glass corresponding to the panel region; and separating the paper glass from the board glass by cutting the paper glass at a position corresponding to an end portion of the panel region adjacent to the peripheral area.

Abstract: Methods for bonding semiconductor wafers requiring the transfer of electrical and optical signals between the bonded wafers and across the bonding interface. The methods for bonding of semiconductor wafers incorporate the formation of both electrical and optical interconnect vias within the wafer bonding interface to transfer electrical and optical signals between the bonded wafers. The electrical vias are formed across the bonding surface using multiplicity of metal posts each comprised of multiple layers of metal that are interfused across the bonding surface. The optical vias are formed across the bonding surface using multiplicity of optical waveguides each comprised of a dielectric material that interfuses across the bonding interface and having an index of refraction that is higher than the index of refraction of the dielectric intermediary bonding layer between the bonded wafers.

Abstract: A display panel includes a base substrate, on which a pixel area and a peripheral area are defined, a semiconductor pattern disposed on the base substrate, a display element disposed in the pixel area of the base substrate and a first thin film transistor configured to control the display element, where the first thin film transistor includes an input electrode a first portion of the semiconductor pattern and an output electrode disposed on a second portion of the semiconductor pattern, a third portion of the semiconductor pattern between the first portion and the second portion; and a control electrode disposed on the third portion and insulated from the third portion.

Abstract: Provided is a flexible organic electroluminescent device and a method for fabricating the same. In the flexible electroluminescent device, line hole patterns are formed on surfaces of a plurality of inorganic layers positioned in a pad region in which a flexible printed circuit board is connected to prevent a path of cracks caused by repeated bending and spreading of the organic electroluminescent device from spreading to the interior of the device.

Abstract: A method of manufacturing an organic light emitting display includes: patterning an amorphous silicon layer to form an amorphous silicon layer pattern; forming an insulating layer on the amorphous silicon layer pattern; forming a gate electrode on a part of the insulating layer which corresponds to the amorphous silicon layer pattern; forming a blocking film on the gate electrode and the insulating layer; doping an impurity in a part of the amorphous silicon layer pattern; annealing the amorphous silicon layer pattern on which the impurity is doped to form a semiconductor layer; removing the blocking film; etching the insulating layer using the gate electrode as a mask to form a gate insulating layer below the gate electrode; forming an interlayer insulating layer using an organic insulator on a buffer layer, the gate electrode, and the semiconductor layer.

Abstract: An exemplary light emitting diode package includes a substrate comprising a first electrode, a second electrode and an insulation layer electrically insulating the first electrode from the second electrode; a light emitting diode is located on the substrate, and electrically connects with the first and second electrodes; a zener diode is located on the substrate, and electrically connects with the first and second electrodes; and a reflecting layer is formed on the zener diode to reflect light emitted from the light emitting diode and toward the zener diode. The disclosure also relates to a method for manufacturing the light emitting diode package.

Abstract: Light emitted within an organic EL device is effectively utilized, and a pixel is provided for improving the extraction efficiency of the light. Light extraction is efficiency is improved without increasing a current by effectively utilizing guided wave light which is a cause of the loss of light emitted by an organic EL device. In order to achieve this, a stepped portion is arrange in an insulating layer provided over a lower layer of a first electrode including a light reflecting surface, and a peripheral area of the first electrode is formed so as to contact the stepped portion. The reflecting surface is formed curved towards a second electrode side in the peripheral area of the first electrode from the stepped portion, light guided through the organic EL layer is reflected by the reflecting surface and emitted from the second electrode side.

Abstract: The present disclosure relates to an organic light emitting diode display having high aperture ratio and a method for manufacturing the same. The present disclosure suggests an organic light emitting diode display comprising: a plurality of pixel areas disposed in a matrix manner on a substrate; a thin film transistor disposed in the pixel area; an organic light emitting diode connected to the thin film transistor and disposed in the pixel area; and a three-stack storage capacitor having four electrodes connected to the thin film transistor and the organic light emitting diode.

Abstract: An organic light-emitting display apparatus including: a substrate; at least one thin-film transistor disposed on the substrate; at least one capacitor disposed on the substrate and including a first electrode and a second electrode; a pixel electrode connected to the at least one thin-film transistor; a counter electrode facing the pixel electrode and including a reflective material; an organic emission layer disposed between the pixel electrode and the counter electrode; a first optical characteristic adjusting layer disposed between the substrate and the pixel electrode and formed on a same layer as the second electrode of the at least one capacitor; and a second optical characteristic adjusting layer disposed between the first optical characteristic adjusting layer and the pixel electrode.

Abstract: A method of manufacturing a nano-rod and a method of manufacturing a display substrate in which a seed including a metal oxide is formed. A nano-rod is formed by reacting the seed with a metal precursor in an organic solvent. Therefore, the nano-rod may be easily formed, and a manufacturing reliability of the nano-rod and a display substrate using the nano-rod may be improved.

Abstract: An organic light emitting display apparatus including a plurality of sub-pixels disposed on a substrate, wherein each of the sub-pixels includes: a first electrode formed on the substrate; an intermediate layer formed on the first electrode and including an organic emission layer; and a second electrode formed on the intermediate layer, wherein at least one sub-pixel for emitting light of a color among the sub-pixels includes a shadow emission layer for emitting light of different color between the organic emission layer and the first electrode, and the organic emission layer of the one sub-pixel includes a hole transport material.

Abstract: An LED packaging includes a substrate having a top surface and a bottom surface opposite to the top surface, a recess defined in the top surface, an LED mounted on the top surface of the substrate, a zener diode received in the recess, and a reflecting layer formed in the recess and enclosing the zener diode therein.

Abstract: A method for manufacturing a flexible display device includes forming a separation layer on a carrier substrate, laminating a flexible substrate having an area that is larger than an area of the separation layer, to the separation layer; forming a dummy pattern on and along an edge of the flexible substrate; exposing a portion of the separation layer by removing a portion of the flexible substrate at a side of the flexible substrate; and separating the separation layer and the flexible substrate from each other.

Abstract: A touch integrated panel includes a first substrate having a first outer surface and a first inner surface where a thin film transistor array is formed, a second substrate having a second outer surface and a second inner surface, and a liquid crystal layer sandwiched between the first inner surface and the second inner surface, wherein a touch sense pattern for sensing touch operations performed on the panel and a key sense pattern for sensing whether a function key is touched are formed on the first outer surface or the second outer surface.

Abstract: A flexible display includes a flexible base substrate, a thin film transistors layer formed on the flexible base substrate, and a light emitting elements layer formed on the thin film transistors layer, where the flexible base substrate includes a first support layer formed below the thin film transistors layer, a second support layer disposed below the first support layer, and a heat-energy blocking/reflecting layer provided between the first support layer and the second support layer. The heat-energy blocking/reflecting layer is configured to block or reflect a sufficient portion of radiated heat-energy that is generated when the flexible base substrate is separated from a supporting carrier substrate so as to prevent the damage from the radiated heat-energy to the light emitting elements layer.

Abstract: An OLED apparatus including a lower substrate including a display and peripheral area, the peripheral area surrounding the display area; a TFT on the lower substrate; a pixel electrode electrically connected to the TFT; a pixel defining layer covering an edge of the pixel electrode and exposing a central portion of the pixel electrode; an intermediate layer on the pixel electrode and including an emission layer; an opposite electrode overlying the pixel electrode; an upper substrate overlying the lower substrate; a sealing member on the peripheral area and attaching the lower substrate to the upper substrate; and a shock absorption member including a first layer on the peripheral area, the first layer being separated from the sealing member and stacked in a layer stack structure on the lower substrate; and a second layer on the first layer and including a same material as the pixel defining layer.

Abstract: An organic light emitting display panel may include a plurality of thin film transistors on a substrate, an insulating interlayer on the thin film transistors, a plurality of first electrodes on a portion of the insulating interlayer electrically connected to the thin film transistors, a plurality of metal lines on a portion of the insulating interlayer, a pixel defining layer on a portion of the insulating interlayer and a portion of the first electrodes, a plurality of organic light emitting structures on the first electrodes in the pixel area, a second electrode on the organic light emitting structures, and a spacer on the pixel defining layer. The insulation interlayer may partially expose electrodes of the thin film transistors. The pixel defining layer may define a pixel area by partially exposing the first electrodes, and an exposed area of the insulating interlayer by partially exposing the insulating interlayer.

Abstract: A display panel including a first switching element, a first pixel electrode electrically connected to the first switching element, the first pixel electrode including a reflective material. A first light emitting layer is disposed on the first pixel electrode, and emits light having a first color when a voltage is applied to the first pixel electrode. A thin encapsulation film is disposed on the first light emitting layer, and protects the first light emitting layer. A pressure sensitive adhesive layer is disposed on the thin encapsulation film, and a first color filter is disposed on the pressure sensitive adhesive layer, corresponding to the first light emitting layer, and has the first color.

Abstract: A flexible organic electroluminescent device is disclosed which includes: a flexible substrate; a buffer layer entirely formed on the flexible substrate; a thin film transistor formed on the buffer layer and configured to include an active layer; a planarization film formed to cover the thin film transistor; an organic light emitting diode formed on the planarization film and configured to include a first electrode, an organic emission layer and a second electrode; and at least one silicon nitride layer formed above the active layer of the thin film transistor but under the planarization film and patterned into a plurality of island patterns.

Abstract: Provided is a thin film transistor having an oxide semiconductor material for an organic light emitting diode display and a method for manufacturing the same. The organic light emitting diode display comprises: a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; a semiconductor layer formed on the gate insulating layer to overlap with the gate electrode, and including a channel area and source and drain areas which extend from the channel area to both outsides, respectively and are conductorized; an etch stopper formed on the channel area and exposing the source area and the drain area; a source electrode contacting portions of the exposed source electrode; and a drain electrode contacting portions of the exposed drain electrode.