Abstract: There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented.

Abstract: A light emitting diode (LED) package and a method of manufacturing a LED package is provided. The LED package includes a case having first and second lead frames disposed through the case; an LED chip disposed on the case, the LED chip having first and second electrodes directly connected to the first and second lead frames through a eutectic bond, respectively; and a lens disposed over the case covering the LED chip.

Abstract: An organic light-emitting display apparatus includes: a substrate; a plurality of thin film transistors on the substrate, each of the thin film transistors including an active layer, a gate electrode, and source and drain electrodes; first electrodes electrically connected to the plurality of thin film transistors, respectively, and being on respective pixels corresponding to the plurality of thin film transistors; organic layers on the first electrodes, respectively, and including light-emitting layers; auxiliary electrodes each of which is on at least a portion between adjacent organic layers of the organic layers; and a second electrode facing the first electrodes and covering the organic layers and the auxiliary electrodes.

Abstract: There is provided a manufacturing method of an LED module including: forming an insulating film on a substrate; forming a first ground pad and a second ground pad separated from each other on the insulating film; forming a first division film that fills a space between the first and second ground pads, a second division film deposited on a surface of the first ground pad, and a third division film deposited on a surface of the second ground pad; forming a first partition layer of a predetermined height on each of the division films; sputtering seed metal to the substrate on which the first partition layer is formed; forming a second partition layer of a predetermined height on the first partition layer; forming a first mirror connected with the first ground pad and a second mirror connected with the second ground pad by performing a metal plating process to the substrate on which the second partition layer is formed; removing the first and second partition layers; connecting a zener diode to the first mirror

Abstract: Embodiments of the present invention provide an organic light emitting diode display panel and a method for manufacturing the same. The manufacturing method comprises: coating a photoresist layer on a transparent substrate with an active array formed; performing exposure on the photoresist layer from one side of the transparent substrate opposed to the photoresist layer, where the scan lines and the at least one kind of lines are used as a mask to prevent exposure of the corresponding photoresist, so that a photoresist remaining region is formed by the photoresist layer; conducting a development treatment on the photoresist layer, so that the photoresist outside the photoresist remaining region is removed and the photoresist in the photoresist remaining region is retained to form the pixel defining layer. The embodiments of the invention may simplify the fabricating flow of the display panel, reduce production costs of the display panel, and increase yield of the display panel.

Abstract: A display device and a method of manufacturing the same. In one embodiment, a display device includes a substrate having a pixel region, a transistor region and a capacitor region, a transistor arranged within the transistor region of the substrate and a capacitor arranged within the capacitor region of the substrate, wherein the capacitor includes a lower electrode arranged on the substrate, a gate insulating layer arranged on the lower electrode and an upper electrode arranged on the gate insulating layer and overlapping the lower electrode, the upper electrode includes a first conductive layer and a second conductive layer arranged on the first conductive layer, wherein the first conductive layer is opaque.

Abstract: An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of majority carriers and lower the series resistance between the contact and the substrate, the regions beneath the metal contacts are more heavily doped. Thus, regions of higher dopant concentration are created in at least one of the FSF or the emitter. These regions are created through the use of selective implants, which can be performed on one or two sides of the bifacial solar cell to improve efficiency.

Abstract: An organic light emitting display device including: a substrate; an active layer formed on the substrate; a first insulation film disposed on the substrate to cover the active layer; a transistor including a gate electrode disposed at a location corresponding to the active layer with the first insulation film in between, and source and drain electrodes electrically connected to the active layer; a first electrode layer disposed on the substrate and electrically connected to any one of the source and drain electrodes of the transistor; a second electrode layer formed on the first electrode layer; an organic light emitting layer disposed between the first electrode layer and the second electrode layer; and a light reflecting unit covering a side and a part of top of the first electrode layer.

Abstract: The present invention has an object of providing a light-emitting device including an OLED formed on a plastic substrate, which prevents degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light-emitting layer in the OLED (“barrier films”) and a film having a smaller stress than the barrier films (“stress relaxing film”), the film being interposed between the barrier films, are provided. Owing to a laminate structure, if a crack occurs in one of the barrier films, the other barrier film(s) can prevent moisture or oxygen from penetrating into the organic light emitting layer. The stress relaxing film, which has a smaller stress than the barrier films, is interposed between the barrier films, making it possible to reduce stress of the entire sealing film. Therefore, a crack due to stress hardly occurs.

Abstract: A display apparatus including: a plurality of thin film transistors; and an interconnect region, wherein each of the thin film transistors includes a first protective film held in contact with a channel layer and disposed remotely from a gate electrode, a second protective film disposed on the first protective film, and a source and drain electrode assembly including a pair of electrodes held in contact with the channel layer, and the interconnect region includes a first interconnect, a second interconnect disposed in alignment with the first interconnect, and an insulating layer interposed between the first interconnect and the second interconnect and having a stacked structure including a first insulating film joined to the gate insulating film and a second insulating film joined to the second protective film.

Abstract: A separated carbon nanotube-based active matrix organic light-emitting diode (AMOLED) device including a substrate and transistors. Each transistor includes an individual back gate patterned on the substrate and a gate dielectric layer disposed over the substrate. An active channel including a network of separated semiconducting nanotubes is disposed over a functionalized surface of the gate dielectric layer. A source contact and a drain contact are formed on two ends of the active channel, with the network of separated nanotubes between the source contact and the drain contact. An organic light-emitting diode (OLED) display device is coupled to the drain of one of the transistors. A system includes a display control circuit having a substrate, with scan lines, data lines, and AMOLED devices formed on the substrate, with each AMOLED device coupled to one of the scan lines and one of the data lines.

Abstract: A organic light emitting display includes a plurality of touch pads spaced from one another in the touch pad portion, each of the touch pads including a metal pad layer and a transparent electrode pad layer connected to the metal pad layer via a plurality of first contact holes in a first insulating film, a dummy pad portion formed in the dead region of the first buffer layer, the dummy pad portion comprising a plurality of dummy pads corresponding to the touch pads, and a sealant comprising a plurality of conductive balls between the touch pad portion and the dummy pad portion.

Abstract: A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.

Abstract: An electrical control system for controlling the electrical voltage applied to each of multiple pixel electrodes on one side of an electrophoretic display comprises (1) a substrate having a plurality of spaced parallel aluminum conductors on one side of the substrate; (2) a thin oxide layer on spaced pixel regions of each of the aluminum conductors to form a gate insulator over each of the spaced pixel regions; (3) a field-effect transistor (FET) formed on the thin oxide layer in each of the spaced pixel regions, the FET having a source terminal, a drain terminal, and a gate connected to the aluminum conductor on which the FET is formed; and (4) a CMOS controller connected directly to each of the aluminum conductors and adapted to supply gate control signals for the FETs. The controller supplies a separate gate control signal for each of the aluminum conductors.

Abstract: An OLED display device is provided. The OLED display device includes a substrate segmented into a plurality sub-pixel regions, a thin film transistor formed in each of the sub-pixel regions, an insulating layer and a planarizion layer formed on the thin film transistor, a semitransparent reflective layer selectively formed in each sub-pixel region on the planarizion layer, a protective layer formed on the semitransparent reflective layer, an anode electrode formed in a region corresponding to the semitransparent reflective layer on the protective layer and connected to the thin film transistor, an organic light emitting layer connected to the anode electrode, and emitting light, and a cathode electrode formed on the organic light emitting layer.

Abstract: The organic light emitting display device includes a substrate, a thin film transistor formed on the substrate, a protective film formed to cover the thin film transistor, a color filter layer formed on the substrate exposed by removing a gate insulating layer of the thin film transistor and the protective film, an overcoat layer formed over the entire surface of the substrate to cover the color filter layer and the protective film, a drain contact hole exposing the thin film transistor by selectively removing the protective film and the overcoat layer, and a first electrode connected to the thin film transistor through the drain contact hole on the overcoat layer, a white organic light emitting layer formed on the first electrode, and a second electrode formed to cover the white organic light emitting layer.

Abstract: A low contact resistance semiconductor structure includes a substrate, a semiconductor stacked layer, a low contact resistance layer and a transparent conductive layer. The low contact resistance layer is formed on one side of a P-type GaN layer of the semiconductor stacked layer. The low contact resistance layer is formed at a thickness smaller than 100 Angstroms and made of a material selected from the group consisting of aluminum, gallium, indium, and combinations thereof. Through the low contact resistance layer, the resistance between the P-type GaN layer and transparent conductive layer can be reduced and light emission efficiency can be improved when being used on LEDs. The method of fabricating the low contact resistance semiconductor structure of the invention forms a thin and consistent low contact resistance layer through a Metal Organic Chemical Vapor Deposition (MOCVD) method to enhance matching degree among various layers.

Abstract: An organic light emitting display device may include a first substrate, a first electrode disposed on the first substrate, a pixel defining layer disposed on the first electrode and the first substrate, an organic light emitting structure disposed on the first electrode, a second electrode disposed on the organic light emitting structure and the pixel defining layer, a second substrate disposed on the second electrode, etc. The pixel defining layer may include a fine uneven structure positioned in the display and the non-display regions. The organic light emitting structure may be substantially uniformly formed on the first electrode through the pixel defining layer having the fine uneven structure, so that an organic light emitting display device may exhibit increased lifetime and may show improved image quality.

Abstract: Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other.

Abstract: A method of making a top-gate organic thin film transistor, comprising forming source and drain contacts on a substrate; oxidizing portions of the source and drain contacts; depositing an organic semiconductor layer to form a bridge between the oxidized portions of the source and drain contacts; depositing a gate insulating layer over the organic semiconductor layer; and forming a gate electrode over the gate insulating layer.

Abstract: An organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes: an active layer that is formed by patterning a semiconductor layer formed by laser crystallization; a gate electrode that is disposed to correspond to a channel area of the active layer; a first insulating layer that is disposed between the active layer and the gate electrode; a second insulating layer that is disposed on the gate electrode; and first test patterns that are formed on the second insulating layer and contact source and drain regions of the active layer and the gate electrode, respectively.

Abstract: This disclosure provides systems, methods and apparatus for encapsulating a display device. In one aspect, an interferometric modulator (IMOD) is formed on a substrate. The IMOD includes an absorbing layer separated from the substrate, a reflective layer between the absorbing layer and the substrate, and an optical gap between the absorbing layer and the reflective layer. One or more thin film encapsulation layers hermetically seal the IMOD between the one or more thin film encapsulation layers and the substrate. In another aspect, an optical or functional layer can be formed over the one or more thin film encapsulation layers.

Abstract: In an organic light-emitting display apparatus and a method of manufacturing the same, a pad region of the organic light-emitting display apparatus comprises a protrusion layer including a plurality of protrusion portions formed on a substrate so as to protrude, a pad lower electrode and a pad upper electrode, the pad lower electrode including a protrusion portion formed along a protrusion outline of the protrusion layer and a flat portion formed along the substrate, and the pad upper electrode being formed on the flat portion of the pad lower electrode. A source/drain electrode layer is formed on the pad upper electrode, an organic layer is formed on the source/drain electrode layer, and a counter electrode layer is formed on the protrusion portion of the pad lower electrode and the organic layer. The counter electrode layer follows the protrusion outline of the protrusion layer on the protrusion portion.

Abstract: The thickness of a display device including a touch sensor is reduced. Alternatively, the thickness of a display device having high display quality is reduced. Alternatively, a method for manufacturing a display device with high mass productivity is provided. Alternatively, a display device having high reliability is provided. Stacked substrates in each of which a sufficiently thin substrate and a relatively thick support substrate are stacked are used as substrates. One surface of the thin substrate of one of the stacked substrates is provided with a layer including a touch sensor, and one surface of the thin substrate of the other stacked substrate is provided with a layer including a display element. After the two stacked substrates are attacked to each other so that the touch sensor and the display element face each other, the support substrate and the thin substrate of each stacked substrate are separated from each other.

Abstract: A light emitting diode and a method of fabricating a light emitting diode, the diode has a first set of multiple quantum wells (MQWs), each of the MQWs of the first set comprising a wetting layer providing nucleation sites for quantum dots (QDs) or QD-like structures in a well layer of said each MQW; and a second set of MQWs, each of the MQWs of the second set formed so as to exhibit a photoluminescence (PL) peak wavelength shifted compared to the MQWs of the first set.

Abstract: An organic light emitting display device includes a substrate, a thin film transistor on the substrate, an organic light emitting element including a first electrode connected to the thin film transistor, an organic light emitting layer on the first electrode, and a second electrode on the organic light emitting layer, and a pixel definition film disposed on the substrate to expose a part of the first electrode. The pixel definition film includes nanoparticles that change a path of light emitted from the organic light emitting layer.

Abstract: To provide a method for fabricating a light-emitting device using flexible glass which is capable of withstanding a process temperature higher than or equal to 500° C., and the light-emitting device. A second substrate is attached to a support substrate using an adsorption layer. The second substrate is bonded to a backplane substrate provided with a transistor and a light-emitting element. The backplane substrate includes a separation layer and a buffer layer. A first substrate is separated from the backplane substrate by separation between the separation layer and the buffer layer. A flexible third substrate is bonded, using a second adhesive layer, to a surface of the buffer layer exposed by the separation. The support substrate is separated from the second substrate by separation between the second substrate and the adsorption layer.

Abstract: A heterostructure containing IC and LED and a method of fabricating. An IC and an LED are established with the IC having a first electric-conduction block and a first connection block. The IC electrically connects to the first electric-conduction block. A first face of the LED has a second electric-conduction block and a second connection block. The LED is electrically connected to the second electric-conduction block. The first electric-conduction block and the first connection block are respectively joined to the second electric-conduction block and the second connection block, and the first electric-conduction block are electrically connected with the second electric-conduction block to form a heterostructure. The heterostructure provides functions of heat radiation and electric communication for IC and LED.

Abstract: Discussed is a method of fabricating an organic light emitting diode display device capable of simplifying a manufacturing process by forming a photoresist pattern to cover a metal pattern to prevent a hole common layer and an electron common layer from being formed on the metal pattern.

Abstract: A semiconductor device simplifies the manufacturing process. The device includes a protective chip which has a surface Zener diode to protect a light emitting chip with an LED formed therein from surge voltage. The protective chip is mounted over a wiring electrically coupled through a metal wire to an anode electrode coupled to a p-type semiconductor region whose conductivity type is the same as that of the semiconductor substrate of the chip. The anode electrode of the protective chip is electrically coupled to the back surface of the chip without PN junction, so even if the back surface is in contact with the wiring, no problem occurs with the electrical characteristics of the Zener diode. This eliminates the need to form an insulating film on the back surface of the chip to prevent contact between the back surface and the wiring, thus simplifying the manufacturing process.

Abstract: The present invention provides a display panel and a method for manufacturing the same. The display panel comprises a substrate, pixels, active elements and storage capacitors, and the active elements and storage capacitors are disposed in the pixels. Each of the storage capacitors includes a first storage electrode and a second storage electrode, and the second storage electrode is disposed in a recess of an insulating layer and positioned to the first storage electrode. In the method for manufacturing the display panel, portions of the insulating layer are removed to form the recesses positioned to the first storage electrodes. The present invention can increase the aperture ratio of the pixels.

Abstract: A method is provided to isolated conductive pads on top of a multi-layer polymer device structure. The method utilizes laser radiation to ablate conductive material and create a non-conductive path, electrically isolating the conductive pads. The process is self-limiting and incorporates at least one layer within the stack that absorbs the radiation at the required wavelength. The prevention of radiation degradation of the underlying layers is achieved, as absorption of radiation occurs primarily on the surface of the structure, but not in any of the radiation sensitive underlying layers of the electronic device. The method preferably uses low energy infrared radiation which has been shown to produce little debris and no device degradation.

Abstract: An object is to simplify a manufacturing process of a transistor, and to manufacture a light-emitting display device not only with a smaller number of photomasks compared to the number of photomasks used in the conventional method but also without an additional step. By using an intrinsic or substantially intrinsic high-resistance oxide semiconductor for a semiconductor layer included in the transistor, so that a step of processing the semiconductor layer into an island shape in each transistor can be omitted. Unnecessary portions of the semiconductor layer are etched away at the same time as a step of forming an opening in an insulating layer formed in an upper layer of the semiconductor layer, so that the number of photolithography steps is reduced.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same is provided. Semiconductor layers of driving transistors located in two adjacent pixels included in the OLED display device may extend in different lengthwise directions. Thus, striped stains of the OLED display device can be improved.

Abstract: An organic light-emitting display apparatus includes a substrate, a display disposed on the substrate, an opposite substrate disposed to face the substrate with the display therebetween, a seal disposed between the substrate and the opposite substrate to couple the substrate to the opposite substrate and arranged around an outer circumference of the display such that the display is located inside the seal, and a support disposed between the substrate and the opposite substrate and arranged around a corner of the seal so that the corner of the seal is located inside the support.

Abstract: Use of semiconductor materials having a lattice constant of within +/?1.6% of 6.1 angstroms facilitates improved semiconductor device performance and new semiconductor structures, for example integration of field-effect devices and optoelectronic devices on a single wafer. High-mobility channels are enabled, improving device performance.

Abstract: A method for forming an electronic device such as a passive color OLED display. Bottom electrodes are patterned onto a substrate in rows. Raised posts formed by photoresist are patterned into columns oriented orthogonally to the bottom row electrodes. One or more organic layers, such as R, G, B organic emissive layers are patterned over the raised posts and bottom electrodes using organic vapor jet printing (OVJP). An upper electrode layer is applied over the entire device and forms electrically isolated columnar electrodes due to discontinuities in the upper electrode layer created by the raised columnar posts. This permits patterning of the upper electrodes over the organic layers without using photolithography. A device formed by this method is also described.

Abstract: In the light-emitting display device according to the present invention, a side-contact structure is adopted in order to secure a TFT characteristic in a linear region (on-current). In a TFT configuring a switching transistor, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is increased. In contrast, in a TFT configuring a driving transistor, in order to maintain an on current, a thickness of a semiconductor layer (channel layer) in a region corresponding to the source/drain electrodes is reduced. This configuration is manufactured using a half-tone mask. With this, it is possible to suppress the off-current in the switching transistor, while securing the on-current in the driving transistor.

Abstract: A light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in that order; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer. The light emitting diode further includes a carbon nanotube layer. The carbon nanotube layer is enclosed in the interior of the first semiconductor layer. The carbon nanotube layer includes a number of carbon nanotubes.

Abstract: A light emitting diode includes a substrate, a carbon nanotube layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on one side of the substrate in that order. The first semiconductor layer is adjacent to the substrate. The carbon nanotube layer is located between the first semiconductor layer and the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.

Abstract: The present invention relates to a quantum dot light emitting diode device in which a hole transportation layer is formed after forming a quantum dot light emitting layer by a solution process by applying an inverted type quantum dot light emitting diode device for making free selection of a hole transportation layer material that enables easy injection of a hole to the quantum dot light emitting layer; and display device and method therewith.

Abstract: An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of majority carriers and lower the series resistance between the contact and the substrate, the regions beneath the metal contacts are more heavily doped. Thus, regions of higher dopant concentration are created in at least one of the FSF or the emitter. These regions are created through the use of selective implants, which can be performed on one or two sides of the bifacial solar cell to improve efficiency.

Abstract: A high efficiency light-emitting diode and a method for manufacturing the same are described. The high efficiency light-emitting diode comprises: a permanent substrate; a first contact metal layer and a second contact metal layer respectively deposed on two opposite surfaces of the permanent substrate; a bonding layer deposed on the second contact metal layer; a diffusion barrier layer deposed on the bonding layer, wherein the permanent substrate, the bonding layer and the diffusion barrier layer are electrically conductive; a reflective metal layer deposed on the diffusion barrier layer; a transparent conductive oxide layer deposed on the reflective metal layer; an illuminant epitaxial structure deposed on the transparent conductive oxide layer, wherein the illuminant epitaxial structure includes a first surface and a second surface opposite to the first surface; and a second conductivity type compound electrode pad deposed on the second surface of the illuminant epitaxial structure.

Abstract: A light emitting diode includes a substrate, a first semiconductor layer, an active layer and a second semiconductor layer. The first semiconductor layer, the active layer and the second semiconductor layer are stacked on one side of the substrate in that order. The first semiconductor layer is oriented to the substrate. A number of channels are defined between the first semiconductor layer and the substrate.

Abstract: A semiconductor light emitting device includes a light emitting unit, a first and second electrode, a first and second metal pillar, a sealing unit, a rectifying element, and a first and second interconnection. The light emitting unit includes a first and second semiconductor layer, and a light-emitting layer. The light-emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light-emitting layer. The first electrode is provided on the first semiconductor layer. The second electrode is provided on the second semiconductor layer. The first metal pillar is electrically connected to the first electrode. The second metal pillar is electrically connected to the second electrode. The sealing unit seals the first metal pillar and the second metal pillar. The rectifying element is provided below the first semiconductor layer, including a rectifying unit.

Abstract: A display panel includes a base substrate, a common electrode, a liquid crystal layer, a pixel electrode, a gate line, a data line, a switching element, a color filter and a light blocking pattern. The base substrate includes a trench. The common electrode is disposed in the trench. The liquid crystal layer is disposed in the trench and disposed on the common electrode. The pixel electrode is disposed on the base substrate and the liquid crystal layer. The gate line, the data line and the switching element are disposed on the base substrate and the pixel electrode. The color filter and the light blocking pattern are disposed on the gate line, the data line and the switching element.

Abstract: A method of fabricating a thin film transistor substrate includes: forming a polymer layer on a glass substrate; forming a passivation layer on the polymer layer; forming a thin film transistor array on the passivation layer; and separating the glass substrate from the polymer layer by irradiating a laser from a rear surface of the glass substrate.

Abstract: An organic light emitting diode (OLED) display includes a substrate where a plurality of pixels are formed, a first pixel defining layer on the substrate, the first pixel defining layer dividing the plurality of pixels, a connection wire on the first pixel defining layer, the connection wire electrically connecting two adjacent pixels, and a second pixel defining layer on the first pixel defining layer, the second pixel defining layer covering the connection wire.

Abstract: A method for exposing an electrode terminal covered with an organic film in a light-emitting device without damaging the electrode terminal is provided. In a region of the electrode terminal to which electric power from an external power supply or an external signal is input, an island-shaped organic compound-containing layer is formed and the organic film is formed thereover. The organic film is removed by utilizing low adhesion of an interface between the organic compound-containing layer and the electrode terminal, whereby the electrode terminal can be exposed without damage to the electrode terminal.

Abstract: Various embodiments provide materials and methods for integrating exemplary heterostructure field-effect transistor (HFET) driver circuit or thyristor driver circuit with LED structures to reduce or eliminate resistance and/or inductance associated with their conventional connections.