Abstract: A capacitor device includes two top capacitor electrodes separated from each other and symmetrical to each other, two intermediate capacitor electrodes symmetrical to each other and respectively overlapping the top capacitor electrodes, a bridge coupling the intermediate capacitor electrodes without overlapping the top capacitor electrodes, and a driving voltage line coupled to the bridge and configured to apply a common voltage to the intermediate capacitor electrodes.

Abstract: A flat panel display device with an oxide thin film transistor and a fabricating method thereof are disclosed. The fabricating method of the flat panel display device includes: preparing a substrate defined into a pixel region and a pad contact region; forming a gate electrode and a link line; forming a pixel electrode within the pixel region; forming an oxide layer on the substrate provided with the pixel electrode; forming a passivation layer on the substrate and performing a formation process of contact holes to expose the link line; and forming a second transparent conductive material film on the substrate.

Abstract: Provided is an organic light-emitting diode (OLED) display including a flexible substrate; a driving circuit unit on the flexible substrate and having a thin film transistor (TFT); an OLED on the flexible substrate and coupled to the driving circuit unit; a sealing layer on the flexible substrate at the OLED and the driving circuit unit; and a first protective film on the flexible substrate, wherein the first protective film includes a photoresist material.

Abstract: A method of manufacturing LED packages includes the steps of: forming a conductive circuit layer on a substrate; screen printing a wall layer on the conductive circuit layer to form a trellis with a plurality of wall units, so that regions of the conductive circuit layer surrounded by the wall units are exposed; mounting and electrically connecting at least one LED die on the conductive circuit layer within each of the wall units; molding a transparent layer to cover the LED dies; and cutting along the wall units to form a plurality of LED packages.

Abstract: A display apparatus includes a plurality of pixels, a signal transmission line, a pad and a buffer. The pixels display an image. The signal transmission line is electrically connected to at least one of the pixels to transmit a signal. The pad is electrically connected to the signal transmission line. The pad has greater width than the signal transmission line. The buffer is disposed between the signal transmission line and the pad. A first end of the buffer adjacent to the pad is wider than a second end of the buffer adjacent to the signal transmission line.

Abstract: Techniques, systems, and devices are disclosed to provide multilayer platforms for integrating semiconductor integrated circuit dies, optical waveguides and photonic devices to provide intra-die or inter-die optical connectivity.

Abstract: A three-terminal light emitting device (LED) chip, associated fabrication method, and LED array are provided. The method forms an n-doped semiconductor layer overlying a substrate, an active semiconductor layer overlying the n-doped semiconductor layer, and a p-doped semiconductor layer overlying the active semiconductor layer. A trench is formed through the p-doped and active semiconductor layers, exposing the n-doped semiconductor layer. In one aspect, the trench is formed at least part way, but not completely, through the n-doped semiconductor layer. Then, an LED P electrode is formed overlying a first region of the p-doped semiconductor layer, a diode P electrode is formed overlying a second region of the p-doped semiconductor layer that is separated from the first region of the p-doped semiconductor layer by the trench, and an N electrode is formed overlying a top surface of the exposed n-doped semiconductor layer in the trench, shared by the LED and diode.

Abstract: Embodiments of the invention describe photonic integrated circuits (PICs) formed using simultaneous fabrication operations performed on photonic device layers. Each device of a PIC may be made from different optimized materials by growing the materials separately, cutting pieces of the different materials and bonding these pieces to a shared wafer. Embodiments of the invention bond photonic device layers so that shared (i.e., common) processing operations may be utilized to make more than one device simultaneously. Embodiments of the invention allow for simpler, more cost effective fabrication of PICs and improve photonic device performance and reliability.

Abstract: On or above a substrate, a first electrode layer and a connection wiring connected to the first electrode layer are provided. On or above the first electrode layer, an organic function layer made of an organic material and a second electrode layer are deposited so as to construct an organic EL element. A sealing layer is provided to cover the organic EL element and the connection wiring. The connection wiring includes a fuse part to cause a break resulting from an overcurrent. The fuse part has an upper surface in contact with a gap layer.

Abstract: An organic light emitting diode (OLED) display including a display panel, a chip on film, and a printed circuit (PCB) is disclosed. In one embodiment, the display panel includes a display area having an OLED and a pixel circuit, and a pad area in an outer side of the display area. The chip on film is connected to the pad area, is bent toward a non-luminescent surface of the display panel, and include an integrated circuit chip. The PCB includes at least a part overlapping with the chip on film in an outer side of the non-luminescent surface of the display panel, and an opening for receiving the integrated circuit.

Abstract: This disclosure discloses a light-emitting device, comprising a substrate having a first major surface and a second major surface; a plurality of light-emitting stacks on the first major surface; and at least one electronic device on the second major surface, wherein the light-emitting stacks are electrically connected to each other in series via a first electrical connecting structure; the electronic device are electrically connected to the light-emitting stacks via a second electrical connecting structure.

Abstract: Provided is an organic light-emitting display device that includes: a substrate; a first wiring that extends in a first direction on the substrate and comprises first and second portions with an opening therebetween; a second wiring that overlaps with the opening and extends in a second direction that crosses the first direction; an insulating film that covers the first wiring and the second wiring and comprises a first contact hole that exposes the first portion of the first wiring and a second contact hole that exposes the second portion; and a bridge electrode that is formed on the insulating film, is electrically connected to the first and second portions through the first and second contact holes, and comprises a transparent conductive oxide and a metal.

Abstract: Disclosed is an organic light-emitting display device capable of preventing the occurrence of cracks at corner regions of an adhesive layer. The organic light-emitting display device includes a first substrate including a plurality of pixels and a second substrate. A thin film transistor (TFT) located at each pixel of the first substrate. A pixel electrode is also located at each pixel. An organic light-emitting unit that emits light is coupled to each pixel electrode. A common electrode is electrically coupled to each organic light-emitting unit. An adhesive layer is coupled to the common electrode. The adhesive layer attaches the first and second substrates. The corner regions of the adhesive layer are rounded in order to control the creation of cracks in the adhesive layer and thereby prevent moisture from entering the active area of the device.

Abstract: Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.

Abstract: The present application relates to a method for fabricating an organic light emitting display device, comprising: forming a drive thin film transistor on a substrate at a non-light emission region; forming a protective layer on the substrate; forming a color filter on the protective layer; forming a planarizing layer on a protective layer including the color filter; selectively removing the protective layer and the light compensating layer to form a first drain contact hole which exposes a drain electrode of the drive thin film transistor; forming a light compensating layer on the planarizing layer to have a second drain contact hole which exposes the first contact hole, and a dummy hole to expose the planarizing layer; and forming an organic light emitting element on the light compensating layer to be in contact with the drain electrode through the first and second drain contact holes.

Abstract: A flexible display substrate, a flexible organic light emitting display device, and a method of manufacturing the same are provided. The flexible display substrate comprises a flexible substrate including a display area and a non-display area extending from the display area, a first wire formed on the display area of the flexible substrate, and a second wire formed on the non-display area of the flexible substrate, wherein at least a part of the non-display area of the flexible substrate is curved in a bending direction, and the second wire formed on at least a part of the non-display area of the flexible substrate includes a first portion formed to extend in a first direction and a second portion formed to extend in a second direction.

Abstract: A method of manufacturing an organic light emitting diode (OLED) display is disclosed. In one aspect, the method includes preparing a substrate, forming a spacer on the substrate along an edge of the substrate, forming a driving circuit and an organic light emitting diode on the substrate to be surrounded by the spacer and forming an encapsulation thin film so as to substantially cover the driving circuit and the organic light emitting diodel. The mask that is used in the forming of the driving circuit and the organic light emitting diode is supported by and contacts the spacer.

Abstract: Reflow solderable, surface mount LED optic mounting devices are provided. Embodiments that include turnings (e.g., made on a swiss turning machine) and stampings (e.g., made with a progressive die) are provided. The LED optic mounting devices are suitably positioned by the same pick-and-place machine that is used to mount LED on planar surface with circuitry and solder pads and are attached to the solder pads by soldering.

Abstract: An organic light emitting diode display includes an array of pixels on a substrate. Each pixel includes three sub-pixels that emits light of different wavelengths from each other. The display includes thin film transistors (TFTs) for the sub-pixels on the substrate. Each TFT is separated from each other by a first pixel defining layer. The display also includes a first pixel electrode connected to the TFT for each sub-pixel, a tuning layer on the first pixel electrode, where the tuning layer has a thickness for each sub-pixel such that each sub-pixel has a optical-path length different from another sub-pixel. The display further includes an organic light emitting layer disposed over the tuning layer, and a second pixel defining layer covering a first end of the tuning layer and a second end of the tuning layer opposing to the first end of the tuning layer, and exposing the light emitting layer.

Abstract: A low-loss GaN-based semiconductor device is provided. The semiconductor device has the InzGa1-zN layer (where 0?z<1), the AlxGa1-xN layer (where 0<x<1), the InyGa1-yN layer (where 0?y<1) and the p-type InwGa1-wN layer (where 0?w<1) which are sequentially stacked on a base substrate of a C-plane sapphire substrate, etc. At a non-operating time, the two-dimensional hole gas is formed in the InyGa1-yN layer in the vicinity part of a hetero-interface between the AlxGa1-xN layer and the InyGa1-yN layer, and the two-dimensional electron gas is formed in the InzGa1-zN layer in the vicinity part of a hetero-interface between the InzGa1-zN layer and the AlxGa1-xN layer.

Abstract: An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern.

Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.

Abstract: A method for forming a thin film transistor includes joining a crystalline substrate to an insulating substrate. A doped layer is deposited on the crystalline substrate, and the doped layer is patterned to form source and drain regions. The crystalline substrate is patterned to form an active area such that a conductive channel is formed in the crystalline substrate between the source and drain regions. A gate stack is formed between the source and drain regions, and contacts are formed to the source and drain regions and the gate stack through a passivation layer.

Abstract: An LED module is disclosed containing an integrated driver transistor (e.g, a MOSFET) in series with an LED. In one embodiment, LED layers are grown over a substrate. The transistor regions are formed over the same substrate. After the LED layers, such as GaN layers, are grown to form the LED portion, a central area of the LED is etched away to expose a semiconductor surface in which the transistor regions are formed. A conductor connects the transistor in series with the LED. Another node of the transistor is electrically coupled to an electrode on the bottom surface of the substrate. In one embodiment, an anode of the LED is connected to one terminal of the module, one current carrying node of the transistor is connected to a second terminal of the module, and the control terminal of the transistor is connected to a third terminal of the module.

Abstract: Provided is a method of manufacturing an organic light-emitting display apparatus which may reduce white angular dependency (WAD). The method includes forming a common layer on each of subpixel areas at the same time without discretion within one pixel area, the common layer not being formed on connection areas between pixel areas.

Abstract: The present invention relates to an organic light-emitting device capable of suppressing deterioration of organic EL elements at the corners of an emission region. The organic light-emitting device includes a planarization film which planarizes thin film transistors arranged in an emission region where pixels are arranged, an element separation film which defines the pixels formed on the planarization film, a charge transport layer formed on the planarization film in each pixel. The charge transport layer contains any one of alkali metals and alkaline-earth metals and extends to outside of the emission region so as to cover the side surface of a peripheral portion of the planarization film, which is disposed in a peripheral region, the planarization film being formed in the emission region.

Abstract: In some aspects, a display device comprising a substrate, an organic film positioned on the substrate, an inorganic film positioned on the organic film and having at least one hole for exposing at least a part of the organic film, a first electrode positioned on the inorganic film, a second electrode positioned on the first electrode, an emission layer positioned between the first electrode and the second electrode to emit light by the first electrode and the second electrode, and an organic pattern positioned on the organic film that is exposed by the hole is provided.

Abstract: A transparent light emitting display is described. A display has a transparent substrate, a plurality of light emitting elements on the substrate, and transparent wires on the substrate to provide an electrical connection to each light emitting element.

Abstract: An organic light emitting diode display device comprises: first and second substrates facing and spaced apart from each other; a gate line and a data line on the first substrate, the gate line and the data line crossing each other to define a plurality of pixel regions; at least one thin film transistor coupled to the gate line and the data line; a light emitting diode coupled to the at least one thin film transistor, the light emitting diode including a first electrode, an emitting layer and a second electrode; and a passivation layer on the light emitting diode, the passivation layer having a smaller area than the second electrode.

Abstract: Embodiments of the present invention disclose a method for manufacturing an array substrate comprising: forming patterns of a thin film transistor structure and a passivation layer on a base substrate to define a plurality of pixel units on the base substrate; forming subsequently patterns of a transflective layer and a color filter in a pixel region of the pixel unit, the color filter being disposed above the transflective layer; forming an organic light-emitting diode in the pixel region of the pixel unit so that the transflective layer and the color filter are disposed between the organic light-emitting diode and the thin film transistor structure. Embodiments of the present invention also provide an array substrate.

Abstract: An array substrate, a manufacturing method thereof and an OLED display device are provided. The array substrate comprises a plurality of pixel units disposed on a substrate, wherein each pixel unit includes a TFT structure formed on the substrate and an OLED driven by the TFT structure; the TFT structure includes a drive TFT. A drain electrode of the drive TFT is connected with the OLED; a gate electrode and the drain electrode of the drive TFT are at least partially overlapped to form a storage capacitor. A recess is formed in an insulating layer interposed between the gate electrode and the drain electrode corresponding to the overlapped area, so that the distance between the gate electrode and the drain electrode is less than the thickness of the insulating layer corresponding to the non-overlapped area.

Abstract: A system includes a plurality of light emitting diodes (LEDs) and a control module configured to generate pulse width modulated (PWM) pulses to drive the LEDs. The LEDs and the control module are integrated in an integrated circuit (IC) package.

Abstract: An organic light emitting diode (OLED) display device and a method of manufacturing the same. The device includes a substrate, a thin film transistor (TFT) on the substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode, a first pixel electrode coupled to one of the source and drain electrodes, a rough portion on the first pixel electrode, a second pixel electrode on the rough portion and having a rough pattern, an intermediate layer on the second pixel electrode including an organic emission layer (EML), and an opposing electrode on the intermediate layer.

Abstract: The present invention relates to an organic light emitting display device which can prevent a light compensation layer from cracking and a method for fabricating the same.

Abstract: There are an array substrate (32), and a dual view field display device and a manufacturing method thereof. The array substrate (32) comprises: a plurality of pixel units (43) defined by gate lines (41) and data lines (42) which intersect each other, each of the pixel units (43) including a pixel electrode (431) and a TFT circuit (432); the pixel electrode (43) of each of the pixel units (43) comprises at least two first pixel electrodes (4311) and at least two second pixel electrodes (4322), which are spaced from each other; the TFT circuit (432) of each of the pixel units (43) comprises a first sub-TFT circuit (4321) connected to the first pixel electrodes (4311) and a second sub-TFT circuit (4322) connected to the second pixel electrodes (4312). According to the above array substrate (32), a dual view barrier (31) can be produced within the display device, and the production costs can be reduced.

Abstract: A method of manufacturing a thin film transistor (TFT), including forming an oxide semiconductor pattern including a first region, a second region and a third region on a substrate, directly plasma processing the first region and the second region of the oxide semiconductor pattern, forming an insulating layer on the substrate to cover the oxide semiconductor pattern, forming a gate electrode on the insulating layer to overlap the third region, and forming a source electrode and a drain electrode that are insulated from the gate electrode and that contact the first region, the second region being disposed between the first region and the third region.

Abstract: An array substrate for a liquid crystal display device includes a substrate, a gate line and a data line on the substrate and crossing each other to define a pixel region, a thin film transistor connected to the gate line and the data line, a first passivation layer on the thin film transistor and having a first unevenness structure at its top surface, an auxiliary unevenness layer on the first passivation layer and having a first roughness structure at its top surface, and a reflector on the auxiliary unevenness layer, the reflector having a second unevenness structure due to the first unevenness structure of the first passivation layer and a second roughness structure due to the first roughness structure of the auxiliary unevenness layer, the second roughness structure having smaller patterns than the second unevenness structure.

Abstract: Disclosed is an organic light-emitting diode (OLED) display panel. An OLED display panel comprises a plurality of signal lines and a thin film transistor formed on a substrate, an interlayer insulating layer, a first electrode, a bank, an organic light-emitting layer, a second electrode, a first passivation layer, an organic layer, a second passivation layer and a barrier film, wherein the bank is formed to completely cover the interlayer insulating layer, and an inclination formed by side surfaces of the bank and the interlayer insulating layer is made to be gradual.

Abstract: A method for manufacturing a display device includes: forming a deformed layer on a support substrate by a silane coupling agent; performing UV treatment on the deformed layer; forming a thin film substrate on the deformed layer; forming a pixel and an encapsulation member on the thin film substrate; and separating the support substrate from the thin film substrate.

Abstract: In one aspect, a back plane for a flat panel display apparatus include: a substrate; a source electrode and a drain electrode formed on the substrate; a capacitor bottom electrode formed on a same layer as the source/drain electrodes; an active layer formed on the substrate in correspondence to the source electrode and the drain electrode; a blocking layer interposed between the source electrode and the drain electrode and the active layer; a first insulation layer formed on the substrate to cover the active layer; a gate electrode formed on the first insulation layer in correspondence to the active layer; a capacitor top electrode formed on a same layer as the gate electrode in correspondence to the capacitor bottom electrode; and a second insulation layer formed on the first insulation layer to cover the gate electrode and the capacitor top electrode is provided.

Abstract: Provided is an organic EL display panel that improves aperture ratio by providing a contact hole beneath an aperture in a bank, and that prevents shortening of the display panel's lifetime by avoiding electric field concentration. An organic EL display panel includes a TFT layer; an interlayer insulation film on the TFT layer and having a plurality of contact holes one per pixel; a plurality of first electrodes, one per pixel, on the interlayer insulation film; a bank defining a plurality of apertures, at least one per pixel, and at least one contact hole is located beneath each aperture; a plurality of organic light-emitting layers each in an aperture; and a second electrode above the organic light-emitting layers. In each aperture, a thickness of the organic light-emitting layer is greater at a portion within the contact hole region than at a portion outside the contact hole region.

Abstract: An organic electroluminescent display device in which a plurality of light-emitting cells each having an organic electroluminescent portion are arranged on a substrate, wherein, for each of the light-emitting cells, a first transistor which controls energization on the organic electroluminescent portion, and a second transistor which switches a signal to be given to an input of the first transistor are disposed, active layers of the first and second transistors are formed by an amorphous oxide semiconductor, and, the first and second transistors are formed so that, when the first and second transistors are driven under same conditions, an amount of an output current of the first transistor is smaller than an amount of an output current of the second transistor.

Abstract: A driving device of a display apparatus, and a method of manufacturing the driving device. The driving device may have a specific structure, and be manufactured in such a manner, because a first electrode of a micro optical switch device may be formed simultaneously with the formation of at least a source region and a drain region, or a gate electrode of an active device and a capacitor electrode.

Abstract: An organic light emitting display device includes: a substrate; a thin film transistor (TFT) on the substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; an organic light emitting device including a pixel electrode that contacts at least one of the source electrode or the drain electrode of the TFT, an interlayer including a light emitting layer, and a counter electrode facing the pixel electrode, the pixel electrode, the interlayer, and the counter electrode being stacked; and a cathode contact part including a first contact layer and a second contact layer, the first contact layer being at a same layer as the active layer and being doped with ion impurities, the second contact layer including a same material as the source electrode and the drain electrode and coupling the first contact layer and the counter electrode to each other.

Abstract: Devices and methods for increasing the aperture ratio and providing more precise gray level control to pixels in an active matrix organic light emitting diode (AMOLED) display are provided. By way of example, one embodiment includes disposing a gate insulator between a gate of a driving thin-film transistor and a gate of a circuit thin-film transistor. The improved structure of the display facilitates a higher voltage range for controlling the gray level of the pixels, and may increase the aperture ratio of the pixels.

Abstract: An organic light emitting diode display includes a pixel portion displaying an image and a peripheral portion surrounding the pixel portion, a semiconductor layer including a pixel switching semiconductor layer on the pixel portion on the substrate, a being driving semiconductor layer, and a peripheral switching semiconductor layer on the peripheral portion, a first gate insulating layer on the semiconductor layer, a peripheral switching gate electrode on the first gate insulating layer of the peripheral portion, a second gate insulating layer covering the peripheral switching gate electrode and the first gate insulating layer, a pixel switching gate electrode and a driving gate electrode on the second gate insulating layer of the pixel portion, and a third gate insulating layer covering the pixel switching gate electrode, the driving gate electrode, and the second gate insulating layer.

Abstract: A radiation-emitting semiconductor chip includes: a carrier and a semiconductor body with a semiconductor layer sequence including an active region that generates radiation, a first semiconductor layer and a second semiconductor layer; wherein the active region is arranged between the first semiconductor layer and the second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the semiconductor body comprises at least one recess which extends through the active region; the first semiconductor layer is electrically conductively connected to a first connection layer extending in the recess from the first semiconductor layer in a direction of the carrier; and the first connection layer is electrically connected to the second semiconductor layer via a protective diode.

Abstract: There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented.

Abstract: A light emitting diode (LED) package and a method of manufacturing a LED package is provided. The LED package includes a case having first and second lead frames disposed through the case; an LED chip disposed on the case, the LED chip having first and second electrodes directly connected to the first and second lead frames through a eutectic bond, respectively; and a lens disposed over the case covering the LED chip.

Abstract: An organic light-emitting display apparatus includes: a substrate; a plurality of thin film transistors on the substrate, each of the thin film transistors including an active layer, a gate electrode, and source and drain electrodes; first electrodes electrically connected to the plurality of thin film transistors, respectively, and being on respective pixels corresponding to the plurality of thin film transistors; organic layers on the first electrodes, respectively, and including light-emitting layers; auxiliary electrodes each of which is on at least a portion between adjacent organic layers of the organic layers; and a second electrode facing the first electrodes and covering the organic layers and the auxiliary electrodes.