Abstract: For one or more stages of execution of a software application at a first processor, a remap vector of a second processor is reconfigured to represent a dynamic mapping of virtual address groups to physical address groups for that stage. Each bit position of the remap vector is configured to store a value indicating whether a corresponding virtual address group is actively mapped to a corresponding physical address group. Address translation operations issued during a stage of execution of the software application are selectively processed based on the configuration of the remap vector for that stage, with the particular value at the bit position of the remap vector associated with the corresponding virtual address group controlling whether processing of the address translation operation is continued to obtain a virtual-to-physical address translation sought by the address translation operation or processing of the address translation operation is ceased and a fault is issued.

Abstract: A memory system includes a memory cell array including a first memory area and a second memory area, an input/output circuit including input/output lines for transmitting or receiving data bits and parity bits to or from the first and second memory areas, and an error correction circuit including a plurality of sub error correction circuits including a first sub error correction circuit for performing a first error correction operation on first data bits of the first memory area received through the input/output lines, and a second sub error correction circuit for performing a second error correction operation on second data bits of the second memory area received through the input/output lines. The first memory area has a higher bit error rate than the second memory area.

Abstract: Metadata is dynamically relocated in a DRAM from a virtual page that does not map to the same DRAM row in which the associated data is located, to that same DRAM row. If the target of a data access request is a location in a first page that is configured to store metadata rather than data, then a second location in a second page may be determined, and the requested data may be accessed at the second location. The associated metadata may be accessed at the location in the first page, which is configured in the virtual domain to store data but is configured in the physical domain to store the metadata associated with the data in the first page.

Abstract: Systems, apparatuses, and methods related to extended memory microcode components for performing extended memory operations are described. An example apparatus can include a plurality of computing devices. Each of the computing devices can include a processing unit and a memory array. The example apparatus can include a plurality of microcode components coupled to each of the plurality of computing devices and each comprise a set of microcode instructions. The example apparatus can further include a communication subsystem coupled to a host and to each of the plurality of computing devices. Each of the plurality of computing devices can be configured to receive a request from the host, retrieve at least one of the set of microcode instructions, transfer a command and the at least one of the set of microcode instructions, and receive a result of performing the operation.

Abstract: A memory system includes a printed circuit board, at least one memory chip mounted on the printed circuit board, and a memory controller arranged on the printed circuit board and connected to 2N (where N is an integer of 2 or more) channels, the memory controller configured to perform a write operation and a read operation on the at least one memory chip. In the printed circuit board, a first subset of the channels corresponds to a first channel group configured in a point to point topology, and a remaining subset of the channels corresponds to a second channel group configured in a daisy chain topology.

Abstract: A semiconductor device may include a memory bank and a plurality of mode registers that communicatively couple to each of the plurality of memory banks. The plurality of mode registers may include a pattern of data stored therein. The semiconductor device may also include a bank control that receives a write pattern command that causes the bank control to write the pattern of data into the memory bank, send a signal to a multiplexer to couple the plurality of mode registers to the memory bank, and write the pattern of data to the memory bank via the plurality of mode registers.

Abstract: A system and method for efficiently allocating resources of destinations to sources conveying requests to the destinations. In various embodiments, a computing system includes multiple sources that generate requests and multiple destinations that service the requests. One or more transaction tables store requests received from the multiple sources. Arbitration logic selects requests and stores them in a processing table. When the logic selects a given request from the processing table, and determines resources for the corresponding destination is unavailable, the logic removes the given request from the processing table and allocates the request in a retry handling queue. When the retry handling queue has no data storage for the request, logic updates a transaction table entry and maintains a count of such occurrences. When the count exceeds a threshold, the logic stalls requests for that source. Requests in the retry handling queue have priority over requests in the transaction tables.

Abstract: A semiconductor device includes an error check and scrub (ECS) command generation circuit and a period signal generation circuit. The ECS command generation circuit generates an ECS command based on a refresh command. The period signal generation circuit generates a sampling period signal, during a sampling period, based on the ECS command and generates an operation period signal, during an operation period, based on the ECS command. A latch error flag is generated to include information on whether errors exist in codewords during the sampling period, and an ECS operation is performed based on the latch error flag, during the operation period, for memory cells that store an erroneous codeword among the codewords.

Abstract: A memory module comprises a volatile memory subsystem configured to coupled to a memory channel in computer system and capable of serving as main memory for the computer system, a non-volatile memory subsystem providing storage for the computer system, and a module controller coupled to the volatile memory subsystem, the non-volatile memory subsystem, and the C/A bus. The module controller is configured to control intra-module data transfers between the volatile memory subsystem and the non-volatile memory subsystem. The module controller is further configured to monitor C/A signals on the C/A bus and schedule the intra-module data transfers in accordance with the C/A signals so that the intra-module data transfers do not conflict with accesses to the volatile memory subsystem by the memory controller.

Abstract: A semiconductor device includes an internal command pulse generation circuit and a sense data generation circuit. The internal command pulse generation circuit is configured to generate an internal command pulse based on a write signal, a latency code, and an offset code. The sense data generation circuit is configured to generate a sense data based on the internal command pulse and an internal data strobe signal and configured to generate the sense data based on the internal command pulse and a delayed strobe signal.

Abstract: A memory controller may be configured with command logic that is capable of sending a memory access command having incomplete address information via a command/address bus that connects the memory controller to memory modules. The memory controller may send the memory access command via the bus for accessing data stored at memory locations of the memory modules. The memory locations may correspond to different near-memory generated reflecting that the data is not address aligned across the memory modules. Nonetheless, because of the near-memory address generation, the memory controller can send the memory access command having incomplete address information for accessing the data stored at the different addresses, as opposed to having to send multiple memory access commands specifying complete address information on the bus for accessing the data at the different addresses, thereby conserving usage of the available bus bandwidth, reducing power consumption, and increasing compute throughput.

Abstract: Techniques for setting a 2-level auto-close timer to access a memory device include examples of setting first and second time values for the 2-level auto-close timer to cause accessed rows to auto-close following a cache line access to a row of a bank of memory devices. For these examples, the cache line access is responsive to a multi-channel address interleaving policy that causes either successive or non-successive cache line accesses to the bank of memory devices.

Abstract: Methods, systems, and devices for generating memory array control signals are described. A timing component may be configured to generate signals for operating a memory array. The timing component may include first logic that indicates when input signals are different, second logic that indicates when at least one of the input signals has a particular state, and third logic that indicates when the input signals have the same state. The output of the second logic and third logic may be controllable by other input signals. An output of the timing component may be set by one of the input signals and reset by the other input signals using the first logic, second logic, and third logic.

Abstract: A semiconductor device is provided. The semiconductor device comprises a first memory unit including a first memory area, and a first logic area electrically connected to the first memory area, the first logic area including a cache memory and an interface port. The first memory unit executes a data transmission and reception operation with a memory unit adjacent to the first memory unit via the first interface port and the cache memory.

Abstract: Systems, apparatuses, and methods related to memory management are described. For example, these may include a first memory level including memory pages in a memory array, a second memory level including a cache, a pre-fetch buffer, or both, and a memory controller that determines state information associated with a memory page in the memory array targeted by a memory access request. The state information may include a first parameter indicative of a current activation state of the memory page and a second parameter indicative of statistical likelihood (e.g., confidence) that a subsequent memory access request will target the memory page. The memory controller may disable storage of data associated with the memory page in the second memory level when the first parameter associated with the memory page indicates that the memory page is activated and the second parameter associated with the memory page is greater than or equal to a threshold.

Abstract: A first master receives a first virtual address in a virtual memory, the first virtual address in the virtual memory corresponding, according to a mapping function, to a first physical address of a first physical memory bank which is to be accessed by the first master. The first master accesses the first physical address to perform a first memory operation in the first memory bank. A second master receives a second virtual address in a virtual memory, the second virtual address in the virtual memory corresponding, according to the mapping function, to a second physical address of a second physical memory bank which is to be accessed by the second master. Concurrently with access by the first master to the first physical address, the second master accesses the second physical address to perform a second memory operation in the second physical memory bank.

Abstract: A semiconductor device includes an input control circuit and an internal command generation circuit. The input control circuit is synchronized with a first pulse of an internal clock signal to generate an internal chip selection signal and a first internal command/address signal from a chip selection signal and a command/address signal. In addition, the input control circuit is synchronized with a second pulse of the internal clock signal to inhibit generation of the internal chip selection signal. The internal command generation circuit generates a first active command and a second active command which are sequentially enabled when the internal chip selection signal and the first internal command/address signal have a predetermined logic level combination.

Abstract: Systems, methods, and apparatuses relating to hardware control of processor performance levels are described. In one embodiment, a processor includes a plurality of logical processing elements; and a power management circuit to change a highest non-guaranteed performance level and a highest guaranteed performance level for each of the plurality of logical processing elements, and set a notification in a status register when the highest non-guaranteed performance level is changed to a new highest non-guaranteed performance level.

Abstract: Methods, apparatuses, and systems related to a data storage are described. Data targeted for storage is communicated to a memory device along with a scramble key. The scramble key is used to encode the target data, and the encoded data is stored at the memory device. For read operations, the encoded data is provided instead of the target data, and the target data is recovered outside of the memory device according to the scramble key.

Abstract: Techniques for memory I/O tests using integrated test data paths are provided. In an example, a method for operating input/output data paths of a memory apparatus can include receiving, during a first mode, non-test information at a data terminal of a first channel of the memory apparatus from a memory array of the first channel via a first data path, receiving during a first test mode, first test information at the data terminal of the first channel from a first additional data path coupling the first channel with a second channel of the memory apparatus, and wherein an interface die of the memory apparatus includes the first data path and the additional data path.

Abstract: A command transmitting method, a memory control circuit unit and a memory storage device are provided. The method includes: transmitting a plurality of command sequences and a state read command sequence to a memory interface coupled to a rewritable non-volatile memory module; and storing the plurality of command sequences by the memory interface, and transmitting the state read command sequence to the rewritable non-volatile memory module.

Abstract: The present disclosure includes apparatuses and methods for cache operations. An example apparatus includes a memory device including a plurality of subarrays of memory cells, where the plurality of subarrays includes a first subset of the respective plurality of subarrays and a second subset of the respective plurality of subarrays. The memory device includes sensing circuitry coupled to the first subset, the sensing circuitry including a sense amplifier and a compute component. The first subset is configured as a cache to perform operations on data moved from the second subset. The apparatus also includes a cache controller configured to direct a first movement of a data value from a subarray in the second subset to a subarray in the first subset.

Abstract: A dynamic random access memory (DRAM) component (e.g., module or integrated circuit) can be configured to have multiple rows in the same bank open concurrently. The controller of the component divides the address space of the banks into segments based on row address ranges. These row address ranges do not necessarily correspond to row address ranges of the bank's subarrays (a.k.a. memory array tiles—MATs). When a command is sent to open a row, the controller marks a plurality of the segments as blocked. The controller thereby tracks address ranges in a bank where it will not open a second row unless and until the first row is closed. The memory component may store information about which, and how many, segments should be blocked in response to opening a row. This information may be read by the controller during initialization.

Abstract: A new long-term memory erasing device, referred to as EasyClean, has been invented. In general, EasyClean is a stand-alone, dedicated function device which is designed for an untrained user, who is tasked with removing data from one or more long-term memory storage devices located in one or more computing devices (targets). EasyClean provides one or more target devices with bootable code. After a target is booted, EasyClean communicates with the target device and monitors the status of the data removal operation. EasyClean may communicate this status to the user. EasyClean may generate an Audit Trail and provide it to the user. EasyClean may accept input from a user, such as what type of data removal to perform. EasyClean may write data to a storage device after the data removal operation is complete.

Abstract: Embodiments are described that leverage variability of a chip. Different areas of a chip vary in terms of reliability under a same operating condition. The variability may be captured by measuring errors over different areas of the chip. A physical factor that affects or controls the likelihood of an error on the chip can be varied. For example, the voltage supplied to a chip may be provided at different levels. At each level of the physical factor, the chip is tested for errors within the regions. Some indication of the error statistics for the regions is stored and then used to adjust power used by the chip, to adjust reliability behavior of the chip, to allow applications to control how the chip is used, to compute a signature uniquely identifying the chip, etc.

Abstract: A control assembly for an aircraft system according to an example of the present disclosure includes a multi-core processor that has a plurality of cores coupled to a communications module and to an arbitration module. The communications module is operable to communicate information between the plurality of cores and one or more aircraft modules. The plurality of cores include first and second cores operable to concurrently execute a first discrete set of software instructions to generate respective instances of an output. The arbitration module is operable to communicate each and every one of the respective instances to control the one or more aircraft modules. A method of operating an aircraft system is also disclosed.

Abstract: Disclosed embodiments relate to enhanced auto-precharge memory scheduling. In one example, a system includes a memory having a matrix of storage cells, which, responsive to a row address strobe (RAS) signal, activates a given row, responsive to a column address strobe (CAS) signal, selects storage cells in the given row, and, responsive to a combined auto-precharge (AP) and CAS signal, accesses, then closes the given row. A memory controller selects a memory request from a memory request queue, generates the RAS signal to activate a row, when another memory request to the row is enqueued, generates the CAS signal to select a storage cell, when another memory request to a same bank but a different row is enqueued, generates the combined AP and CAS signal, and, when no memory request to the same bank is enqueued, generates the CAS signal only, allowing a close timer to close the row.

Abstract: There is provided an apparatus that includes a first port that receives first data of a first type from a first storage circuit. A second port receives second data of a second type from a second storage circuit having a lower worst case latency in hardware than the first storage circuit. A third port receives access requests for the first data and the second data from a processing circuit. When one of the access requests is received for the first data, it is forwarded to the first storage circuit and when the one of the access requests is received for the second data, it is forwarded to the second storage circuit. A shared storage circuit stores the first data and the second data and has a storage capacity.

Abstract: A device for detecting an error of data stored in a memory device includes an error detection trigger circuit configured to transmit an error detection trigger information for instructing an error detecting operation for at least a part of the data, at each first cycle, in the case where an error detection performing condition is satisfied; an error detection performing circuit configured to receive the error detection trigger information, instruct an error calculation engine to perform an error detecting operation for part or all of the data, and receive an error detection result information from the error calculation engine; and a reporting circuit configured to transmit reporting information depending on the error detection result information, to a target device.

Abstract: Techniques herein may allow a row of a subarray in a bank of a memory device to be activated before a precharge operation has been completed for a previously opened row of memory cells in the same bank. Each subarray within the bank may be associated with a respective local latching circuit, which may be used to maintain phases at the subarray independent of subsequent commands to the same bank. For example, the latching circuit may internalize timing signals triggered by a precharge command for a first row such that if an activation command is received for a different subarray in the same bank at a time before the precharge operation of the first row is complete, the precharge operation may continue until the first row is closed, as the timing signals triggered by the precharge command may be maintained locally at the subarray using the latching circuit.

Abstract: In a memory module having a plurality of discrete memory die packages, an N-bit data interface and a command/address buffer, a memory access command and chip-select input signals are received within the command/address buffer. In response to the chip-select input signals, the command/address buffer outputs chip-select output signals greater in quantity than the chip-select input signals to exclusively enable one of a plurality of groups of the discrete memory die packages to respond to the memory access command, each of the plurality of groups of the discrete memory die packages having a collective data interface width less than the N-bit data interface width.

Abstract: A system and a method are disclosed for error correction during operations of a memory system. For example, during a read operation, the error correction includes a read retry determination to account for link errors that are detectable by cyclic redundancy check (CRC) but not correctable by error correction coding (ECC). Reducing the number of read retry operations performed may improve system performance by reducing the number of clock cycles spent on retry operations that could have otherwise been allocated for other system services (e.g., completing read and write operations). Additional CRC calculations and checks may be used to determine when to perform a retry in addition to existing CRC and ECC checks, reducing the number of potential retry operations and improving system performance.

Abstract: A chip select training mode (CSTM) enables a memory subsystem to train a chip select signal separately from command bus training. A memory device and a memory controller can connect via a command bus including a chip select signal line. Instead of training the chip select along with other signal lines of the command bus, a CSTM mode enables the memory subsystem to more accurately train the chip select. The memory device can be triggered for CSTM mode with a command, and then train voltage margining for the CS signal line to align chip select signaling with the memory subsystem clock signal.

Abstract: A method and a system for measuring the thermal stability factor of a magnetic tunnel junction device, a semiconductor integrated circuit, and a production management method for the semiconductor integrated circuit, capable of measuring the thermal stability factors of individual devices in a relatively short period of time and quickly performing quality control during material development and at a production site. A meter measures change in resistance value of an evaluation MTJ for a predetermined period while causing a predetermined current to flow into the evaluation MTJ maintained at a predetermined temperature. An analyzer calculates a time constant in which a low-resistance state is maintained and a time constant in which a high-resistance state is maintained from the measured change in resistance value. A thermal stability factor of the evaluation MTJ is calculated on the basis of the calculated time constants and the predetermined current flowing into the evaluation MTJ.

Abstract: A method of memory time division control for a memory system comprising a plurality of memory controllers and memory devices is disclosed. The method comprises assigning a first operation timing to a first memory controller of the plurality of memory controllers and assigning a second operation timing to a second memory controller of the plurality of memory controllers, wherein the first operation timing is interleaved with the time of the second operation timing, transmitting a first chip select signal generated according to the first command signal, to a first memory device of the plurality of memory devices, and transmitting a second chip select signal generated according to the second command signal, to a second memory device of the plurality of memory devices.

Abstract: A memory module includes a plurality of memory integrated circuit (IC) packages to store data and a command buffer IC to buffer one or more memory commands destined for the memory IC packages. The command buffer IC includes a first interface circuit and one or more second interface circuits. The first interface circuit receives the one or more memory commands. The one or more second interface circuits output a pre-programmed command sequence to one or more devices separate from the command buffer IC, the pre-programmed command sequence output in response to the one or more memory commands matching a pre-programmed reference command pattern.

Abstract: A system, method, and computer program product are provided herein to manage DRAM bank activation per cycle. A memory controller with embedded scheduling logic is employed to manage the system, method, and computer program product and to restrict the quantity of active banks in a given cycle, resulting in power savings with minimal performance loss, if any. The scheduling logic provides instructions to manage the state of associated DRAM banks. Each bank is either in an idle state or an active state, with the idle state consuming less power than the active state. The scheduling logic restricts the quantity of active banks in any cycle, with all other banks being in an idle state, which provides power savings to the associated system.

Abstract: A network processor includes a memory subsystem serving a plurality of processor cores. The memory subsystem includes a hierarchy of caches. A mid-level instruction cache provides for caching instructions for multiple processor cores. Likewise, a mid-level data cache provides for caching data for multiple cores, and can optionally serve as a point of serialization of the memory subsystem. A low-level cache is partitionable into partitions that are subsets of both ways and sets, and each partition can serve an independent process and/or processor core.

Abstract: A method of page size aware scheduling and a non-transitory computer-readable storage medium having recorded thereon a computer program for executing the method of page size aware scheduling are provided. The method includes determining a size of a media page; determining if the media page is open or closed; performing, by a memory controller, a speculative read operation if the media page is determined to be open; and performing, by the memory controller, a regular read operation if the media page is determined to be closed.

Abstract: The present disclosure includes apparatuses and methods related to dual speed memory. A memory module can include a number of memory devices that coupled to a host via a number of first ports and coupled to a controller via a number of second ports. The memory module can be configured to transfer data on the first number of ports at a first clock speed and transfer data on the second number of ports at a second clock speed.

Abstract: A memory subsystem enables per device addressability (PDA) to target configuration commands to one of multiple memory devices that share a select line or buffer devices that share an enable line. The system includes a host and multiple memory devices that can be coupled over a command bus and a data bus. The devices include a configuration or mode register to store a value to indicate whether PDA enumeration is enabled. When enabled, the host can provide an enumeration identifier (ID) command via the command bus with a signal via the data bus to assign an enumeration ID. After assignment of the enumeration ID, the host can send PDA commands via the command bus with the enumeration ID, without a signal on the data bus. Devices only process PDA commands that match their assigned enumeration ID, enabling the setting of device-specific configuration settings without needing to use the data bus on every PDA command.

Abstract: The present disclosure includes apparatuses and methods related to memory module interfaces. A memory module, which may include volatile memory or nonvolatile memory, or both, may be configured to communicate with a host device via one interface and to communicate with another memory module using a different interface. Memory modules may thus be added or removed from a system without impacting a PCB-based bus to the host, and memory modules may communicate with one another without accessing a bus to the host. The host interface may be configured according to one protocol or standard, and other interfaces between memory modules may be configured according to other protocols or standards.

Abstract: Systems and methods may involve circuitry that receives a first transition of a clocking signal. The circuitry may also to enable a compensation circuit characterized by a capacitance in response to the first transition of the clocking signal and may receive subsequent transitions of the clocking signal. The circuitry may also apply the capacitance to the subsequent transitions of the clocking signal after enabling the compensation circuit to generate a compensated clocking signal characterized by an adjusted duty cycle relative to a duty cycle of the clocking signal.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a liner on the MTJ; removing part of the liner to form a recess exposing the MTJ; and forming a conductive layer in the recess, wherein top surfaces of the conductive layer and the liner are coplanar. Preferably the MTJ further includes: a bottom electrode on the substrate, a fixed layer on the bottom electrode, and a top electrode on the fixed layer, in which the conductive layer and the top electrode are made of same material.

Abstract: Examples described herein relate to efficient memory access. An example is a system includes a programmable device, and a memory. The programmable device is coupled to the host and receives the read/write requests and the addresses associated therewith. The programmable device interleaves the read/write requests across multiple communication channels based on a subset of bits within each address. The memory receives the read/write requests from the programmable device. The memory stores contents associated with the addresses for write requests and returns contents associated with the addresses for a read request to the programmable device. The programmable device returns the received contents to the host for processing.

Abstract: A method controls a memory device that includes a page buffer circuit comprising a plurality of page buffers each comprising at least one latch. The method includes generating by an internal voltage circuit at least one internal voltage among internal voltages used for an operation of the page buffer circuit, the internal voltage circuit providing the at least one internal voltage to the page buffer circuit; and providing to the page buffer circuit a control signal for forming an electrical connection between the internal voltage circuit and a first electrical node of a first page buffer unused for buffering in the page buffer circuit during a set operation for a first latch of a second page buffer.

Abstract: According to an exemplary embodiment, a memory device may include a memory cell array that includes memory cells connected to word lines arranged in sequential order depending on a sequential change of a row address, a row decoder that, for each row address input to the row decoder, scrambles a first bit of the row address and a second bit of the row address depending on a selection signal, thereby forming a scrambled row address, decodes the scrambled row address, and selects a word line from the word lines based on the scrambled row address, and an anti-fuse array that includes an anti-fuse in which a logical value of the selection signal is programmed. A first word line and a second word line of the word lines may be adjacent to each other, and a difference between a first value of the row address corresponding to the first word line and a second value of the row address corresponding to the second word line may be a value corresponding to the first bit.

Abstract: An apparatus includes a control circuit comprising (i) a first differential data strobe input/output circuit having a first set of driver and termination control inputs and (ii) a second differential data strobe input/output circuit having a second set of driver and termination control inputs. The first and the second sets of driver and termination control inputs are independently programmable. The first and the second differential data strobe input/output circuits operate in a first mode when the first differential data strobe input/output circuit is connected to a first memory device having a first data width and the second differential data strobe input/output circuit is connected to a second memory device having the first data width.

Abstract: A method is described. The method includes receiving notice of a page fault. A page targeted by a memory access instruction that resulted in the page fault residing in persistent memory without system memory status. In response to the page fault, updating page table information to include a translation that points to the page in persistent memory such that the page changes to system memory status without moving the page and system memory expands to include the page in persistent memory.

Abstract: A method and apparatus are provided to enable snoop forwarding to occur together with memory protection. A data processing apparatus in, for instance, the form of a home node forwards a snoop forwarding request on behalf of a requester to a target, the snoop forwarding request being capable of indicating one or more access permissions of the target in relation to the data. A further data processing apparatus in the form of, for instance, a receiver node may receive the snoop forwarding request and based on its own permissions that are provided in the snoop forwarding request, together with the state of the data, either provide a response back to the requester or the home node. In a still further data processing apparatus in the form of, for instance, a Memory Protection Unit (MPU), a regular snoop forwarding request made to a target in relation to data can be forwarded to the target or demoted to a non-forwarding snoop request based on the permissions of the target in relation to the data at the MPU.