Abstract: Techniques for reducing post-routing delay variance are described herein. In an example embodiment, an initial netlist includes multiple instances that represent digital components of an electronic design. An base signature is assigned to each instance in the initial netlist, where the base signature is based on two or more design or connectivity attributes of the instance. The base signatures are then used to generate an initial instance ordering of the instances in the initial netlist. A subsequent netlist, different from the initial netlist but representing the same electronic design, is received. Base signatures are assigned to the instances on the subsequent netlist and a subsequent instance ordering is generated. The subsequent instance ordering preserves the same order as the initial instance ordering for those instances that are included in both the initial netlist and the subsequent netlist. In this manner, any later netlist-based processing (e.g.

Abstract: A programmable analog tile integrated circuit is configured over a standardized bus by communicating tile configuration information from a first integrated circuit tile, through a second integrated circuit tile, to a third integrated circuit tile. Each of the three integrated circuit tiles is part of an integrated circuit. The standardized bus is formed when the tiles are placed adjacent one another. Data bus and control signal conductors of the adjacent tiles line up and interconnect such that each signal conductor is electrically connected to every tile. Tile configuration information may be written to a selected register identified by an address in any selected one of the tiles using the data bus and control lines, regardless of the relative physical locations of the tile sending and the tile receiving the information. Thus, tile configuration information may pass from one tile to another tile, through any number of intermediate tiles.

Abstract: A lumped aggressor model is used to simulate multiple aggressor nets acting on a victim net. By lumping the aggressor nets together into a single input port, a single voltage excitation may be applied to the input port to simulate the model during static timing analysis. However, a record of each individual aggressor net and several associated attributes for each aggressor net is maintained such that the individual lumped aggressor nets may still be modeled as separate contributions to the attack on the victim net.

Abstract: Methods for converting planar designs to FinFET designs in the design and fabrication of integrated circuits are provided. In one embodiment, a method for converting a planar integrated circuit design to a non-planar integrated circuit design includes identifying a rectangular silicon active area in the planar integrated circuit design, superimposing a FinFET design grid comprising a plurality of equidistantly-spaced parallel grid lines over the rectangular silicon active area such that two sides of the rectangular silicon active area are parallel to the grid lines, and generating a rectangular active silicon marker area encompassing the silicon active area. Furthermore, the method includes generating fin mandrels longitudinally along every other grid line of the plurality of grid lines and within the active silicon marker area and the silicon active area, and removing the fin mandrels from areas of the design grid outside of the active silicon marker area.

Abstract: Defective artifact removal is described in photolithography masks corrected for optical proximity. In one example a method is described in which partitions are identified in a mask design for independent optimization. The partitions are grouped and ordering into stages. The first stage is processed. Geometries are extracted from the periphery of the first stage partitions. The extracted geometries are added to the peripheries of second stage partitions. Then the second stage partitions are processed.

Abstract: One embodiment relates to a method of achieving an circuit dimension which is greater than a size of an exposure field of an illumination tool. A first area of a first reticle field and a second area of a second reticle field are defined. An extension zone is created as a region outside the first area, and includes a first layout shape formed on a first design level. A corresponding forbidden zone is created for the second reticle field as a region inside the second area where no layout shape on the first design level is permitted. A second layout shape is formed on a second design level within the forbidden zone. The first and second areas are then abutted. Upon abutment of the first and second areas, the second layout shape overlaps the first layout shape to form a connection between circuitry of the first and second reticle fields.

Abstract: A method of detailed placement for ICs is provided. The method receives an initial placement and iteratively builds sets of constraints for placement of different groups of cells in the IC design and uses a satisfiability solver to resolve placement violations. In some embodiments, the constraints include mathematical expressions that express timing requirements. The method in some embodiments converts the mathematical expressions into Boolean clauses and sends the clauses to a satisfiability solver that is only capable of solving Boolean clauses. In some embodiments, the method groups several cells in the user design and several sites on the IC fabric and uses the satisfiability solver to resolve all placement issues in the group. The satisfiability solver informs placer after each cell is moved to a different site. The method then dynamically builds more constraints based on the new cell placement and sends the constraints to the satisfiability solver.

Abstract: Using an adaptive square mesh for parasitic extraction, small squares of a predetermined minimum size will be placed where accuracy in the parasitic calculations is most critical—around edges, contacts and vias, and corners. Then, in areas where the parasitic analysis is less critical, for example in open spaces, a more coarse grid consisting of larger squares may be used to calculate the parasitic values in those spaces. Squares in the mesh may increase in size gradually to provide more accurate results.

Abstract: A semiconductor device has first wiring layers and a plurality of dummy wiring layers that are provided on the same level as the first wiring layers. The semiconductor device defines a row direction, and first virtual linear lines extending in a direction traversing the row direction. The row direction and the first virtual linear lines define an angle of 2-40 degrees, and the dummy wiring layers are disposed in a manner to be located on the first virtual linear lines. The semiconductor device also defines a column direction perpendicular to the row direction, and second virtual linear lines extending in a direction traversing the column direction. The column direction and the second virtual linear lines define an angle of 2-40 degrees, and the dummy wiring layers are disposed in a manner to be located on the second virtual linear lines.

Abstract: Some embodiments include a DRAM array layout. Wordlines extend along a first direction, and bitlines extend along a second direction that crosses the first direction. Cell active material structures are at intersections of the wordlines and bitlines. The cell active material structures have a first side coupled to a bitline and a second side coupled to a capacitor. The second side is on an opposite side of a wordline passing through a cell active material structure relative to the first side. Each cell active material structure has a connection to a bitline which is not shared with any other cell active material structures. Some embodiments include DRAM arrays and semiconductor constructions.

Abstract: The present disclosure relates to an arrangement and a method of performance-aware buffer zone placement for a high-density array of unit cells. A first feature density of the array is measured and maximum variation for a parameter within a unit cell is determined. A look-up table of silicon data is consulted to predict a buffer zone width and gradient value that achieves a variation that is less than the maximum variation for the unit cell. The look-up table contains a suite of silicon test cases of various array and buffer zone geometries, wherein variation of the parameter within a respective test structure is measured and cataloged for the various buffer zone geometries, and is also extrapolated from the suite of silicon test cases. A buffer zone is placed at the border of the array with a width that is less than or equal to the buffer zone width.

Abstract: A library of cells for designing an integrated circuit, the library comprises continuous diffusion compatible (CDC) cells. A CDC cell includes a p-doped diffusion region electrically connected to a supply rail and continuous from the left edge to the right edge of the CDC cell; a first polysilicon gate disposed above the p-doped diffusion region and electrically connected to the p-doped diffusion region; an n-doped diffusion region electrically connected to a ground rail and continuous from the left edge to the right edge; a second polysilicon gate disposed above the n-doped diffusion region and electrically connected to the n-doped diffusion region; a left floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the left edge; and a right floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the right edge.

Abstract: One embodiment relates to a method of achieving an circuit dimension which is greater than a size of an exposure field of an illumination tool. A first area of a first reticle field and a second area of a second reticle field are defined. An extension zone is created as a region outside the first area, and includes a first layout shape formed on a first design level. A corresponding forbidden zone is created for the second reticle field as a region inside the second area where no layout shape on the first design level is permitted. A second layout shape is formed on a second design level within the forbidden zone. The first and second areas are then abutted. Upon abutment of the first and second areas, the second layout shape overlaps the first layout shape to form a connection between circuitry of the first and second reticle fields.

Abstract: An approach and apparatus are provided for optimizing and combining different semiconductor technologies into a single graphic data system. Embodiments include generating a planar semiconductor layout design, generating a three-dimensional (e.g., FinFET) semiconductor layout design, and combining the planar design and the FinFET design in a common graphic data system.

Abstract: A semiconductor chip is defined to include a logic block area having a first chip level in which layout features are placed according to a first virtual grate, and a second chip level in which layout features are placed according to a second virtual grate. A rational spatial relationship exists between the first and second virtual grates. A number of cells are placed within the logic block area. Each of the number of cells is defined according to an appropriate one of a number of cell phases. The appropriate one of the number of cell phases causes layout features in the first and second chip levels of a given placed cell to be aligned with the first and second virtual grates as positioned within the given placed cell.

Abstract: A layout of a standard cell is stored on a non-transitory computer-readable medium and includes a first conductive pattern, a second conductive pattern, a plurality of active area patterns and a first central conductive pattern. The plurality of active area patterns is isolated from each other and arranged in a first row and a second row between the first and second conductive patterns. The first row is adjacent the first conductive pattern and includes a first active area pattern and a second active area pattern among the plurality of active area patterns. The second row is adjacent the second conductive pattern and includes a third active area pattern and a fourth active area pattern among the plurality of active area patterns. The first central conductive pattern is arranged between the first and second active area patterns. The first central conductive pattern overlaps the first conductive pattern.

Abstract: A method and system for improving the yield of integrated devices is invented by adaptively selecting contact and via sizes. According to this invention, the drawn size of via holes in a design layout is selected based on its neighboring layout geometries. The invention comprises identifying the minimal space required for placing a via; analyzing available free space for potential via size increase; identifying the proximity configuration of the via with other vias on the via layer; selecting an appropriate via size based on the free space and proximity configuration to create an improved design layout; and fabricate the new layout with model based proximity correction such that vias of a plurality of sizes are reproduced on silicon within predetermined tolerances.

Abstract: A method of generating an integrated circuit layout comprises a step of determining a placement of standard cells selected from a standard cell library while permitting boundary conflicts in which incompatible boundary regions of standard cells are placed next to each other. After determining routing connections between the standard cells, the integrated circuit layout is generated. The generation of the integrated circuit layout includes a mapping step of mapping at least one incompatible boundary region to an alternative boundary region to resolve at least one boundary conflict.

Abstract: A method that determines the maximum number of logic cells that can be placed in a predetermined area on the base of an integrated circuit, and meet a voltage drop requirement. The method iteratively changes the logic cell spacing until the voltage drop requirement is made. This is done prior to the placement and extraction design phases as was done in previous methods. The predetermined area may be extrapolated across the base of the integrated circuit and meet the voltage drop requirements without the need to change the power grid, or to redo the placement and extraction phases. An integrated circuit designed according to the method, and an integrated circuit design system for using the method is also disclosed.

Abstract: An improved method for the placement and routing of compound elements, each comprising a series/parallel combination of nominally identical elements, is disclosed. The method treats each compound element as a separate cell (the sub-circuit construct commonly used in silicon chip design) so as to treat as a unit all the nominally identical elements that make up a compound value, and place them as a single group in the design of a chip. This results in the compound elements being placed as units and routed in such a way that all of the nominal elements are located together and any effects between compound values are thus relatively localized and optimally isolated.

Abstract: A finFET block architecture uses end-to-end finFET blocks. A first set of semiconductor fins having a first conductivity type and a second set of semiconductor fins having a second conductivity type can be aligned end-to-end. An inter-block isolation structure separates the semiconductor fins in the first and second sets. The ends of the fins in the first set are proximal to a first side of the inter-block isolation structure and ends of the fins in the second set are proximal to a second side of the inter-block isolation structure. A patterned gate conductor layer includes a first gate conductor extending across at least one fin in the first set of semiconductor fins, and a second gate conductor extending across at least one fin in the second set of semiconductor fins. The first and second gate conductors are connected by an inter-block conductor.

Abstract: A test circuit includes a substrate, a wiring section having a plurality of pieces of wiring, and a device-under-test section formed on the substrate, and having a device-under-test main body and a plurality of connecting electrodes for establishing connection between the main body and the plurality of pieces of wiring, an extending direction of a straight line connecting a position of a center of rotation in a plane of pattern formation of the main body and each electrodes being inclined at a predetermined angle to an extending direction of the pieces of wiring, and the connecting electrodes being arranged at positions such that connection relation between the electrodes and the plurality of pieces of wiring is maintained even when the main body and the electrodes are rotated about the position of the center of rotation by 90 degrees relative to the wiring section in the plane of the pattern formation.

Abstract: A layout for an integrated circuit is designed by assigning physical design attributes including locations to a selected subset of placeable objects in the circuit netlist, prior to any physical synthesis. A layout abstract is displayed in a graphical user interface to allow the designer to visually inspect a layout abstract which shows the selected objects at their assigned locations. After making any desired modifications to the object locations, the location information can be formatted as a synthesis input file. Physical synthesis is then carried out while maintaining fixed locations for the selected objects according to the assigned locations. Physical design attributes can include coordinates and an orientation. The selected subset of placeable objects can constitute an identified datapath of the integrated circuit design.

Abstract: In one embodiment of the invention, a physical layout wire-load algorithm is used to generate a wire-load model based on physical data including aspect ratio and wire definitions defined in a physical library. The physical layout estimator is utilized to dynamically produce the physical layout wire-load model and to calculate net length and delay for each optimization iteration.

Abstract: Integrated circuit design uses a library of structured soft blocks (SSBs) composed of pre-defined sets of cells with their logic implementation and placement templates with their relative placement information. A compiler receives a circuit description which includes an instance of an SSB and unfolds the instance according to the placement template to generate a modified circuit description which includes the relative placement information. The placement of circuit objects is optimized while maintaining relative locations for cells of the SSB instance according to the relative placement information. The SSB may be hierarchical. Gate resizing of cells in the SSB instance may result in a change in its bounds. A timing optimization procedure for the modified circuit description may be carried out while hiding internal details of the SSB instance. For example, buffers may be inserted in nets external to the SSB instance while preventing insertion of buffers in any internal nets.

Abstract: Methods for modifying a layout design of an integrated circuit are provided. In one embodiment, a method for modifying an integrated circuit layout design includes providing an initial circuit layout design comprising a lower metal layer, an upper metal layer, and a first via electrically connecting the lower metal layer to the upper metal layer. The method further includes altering the initial circuit layout design by providing a second via, the second via being in electrical contact with no more than one of the upper metal layer and the lower metal layer, and the second via further being in proximity to the first via. Further, the method includes further altering the initial circuit layout design by providing a subresolution assist feature in proximity to the second via.

Abstract: An integrated circuit layout includes a first active region, a second active region, a first PODE (poly on OD edge), a second PODE, a first transistor and a second transistor. The first transistor, on the first active region, includes a gate electrode, a source region and a drain region. The second transistor, on the second active region, includes a gate electrode, a source region and a drain region. The first active region and the second active region are adjacent and electrically disconnected with each other. The first PODE and the second PODE are on respective adjacent edges of the first active region and the second active region. The source regions of the first and second transistor are adjacent with the first PODE and the second PODE respectively. The first PODE and the second PODE are sandwiched between source regions of the first transistor and the second transistor.

Abstract: A computer-implemented method of configuring a semiconductor device includes identifying an interconnect having an interconnect path length greater than a stress-induced void formation characteristic length of the semiconductor device, and placing, with a processor, a conductive structure adjacent the interconnect to define a pair of segments of the interconnect. Each segment has a length no greater than the stress-induced void formation characteristic length of the interconnect, and the conductive structure is selected from the group consisting of a decoy via connected to the interconnect, a floating tile disposed along the interconnect, a tab that laterally extends outward from the interconnect, and a jumper from a first metal layer in which the interconnect is disposed to a second metal layer.

Abstract: A device includes a static random access memory (SRAM) cell and a read buffer coupled to an output of the SRAM cell. The read buffer includes an inverter and a switch. An input of the inverter is responsive to the output of the SRAM cell. A control terminal of the switch is responsive to an output of the inverter.

Abstract: A standard cell library is disclosed. The standard cell library contains cells wherein at least one transistor in at least one cell is annotated for gate length biasing. Gate length biasing includes the modification of the gate length, so as to change the speed or power consumption of the modified gate length. The standard cell library is one used in the manufacturing of semiconductor devices (e.g., that result as semiconductor chips), by way of fabricating features defined on one or more layouts of geometric shapes. The annotations serve to identify which ones of the transistor gate features are to be modified before using the geometric shapes for manufacturing the semiconductor device.

Abstract: A computer-based system and method for modeling integrated circuit congestion and wire distribution determines a boundary where a tile congestion corresponding to a first layer group is equivalent to a first blockage ratio corresponding to a second layer group, formulates a piece-wise linear formula that relates the tile congestion to a number of wires of a two-dimensional tile, and distributes a portion of the number of wires to a layer of the tile based on the tile congestion.

Abstract: Methods for standard cells using finFET standard cell structures with polysilicon on OD edges. Standard cells are defined using finFET transistors and having gate structures forming a transistor at an intersection with a semiconductor fin. Polysilicon dummy structures are formed on the edges of the active areas or OD areas of the standard cells. In a design flow, a pre-layout netlist schematic for the standard cells includes a three terminal MOS device corresponding to the polysilicon dummy structure on the edges of the standard cell. After an automated place and route process forms a device layout using the standard cells, a post layout netlist is extracted. Where two standard cells abut one another, a single polysilicon dummy structure is formed on the common boundary. A layout versus schematic comparison is then performed comparing the pre-layout netlist and the post-layout netlist to verify the layout obtained. Additional methods are disclosed.

Abstract: A system or process for providing complete electrical designs through: computer-automated circuiting; computer automated service device selection, placement, and interconnection; and computer-automated branch circuit wiring, wherein the complete electrical design complies with regulatory, industry standard practice, and client criteria.

Abstract: A fixed-outline floorplanning approach for mixed-size modules is disclosed. Firstly, evenly distribute mixed-size circuit modules to whole chip area based on different requirements such as wire-length, routability, or thermal in the global distribution stage. To maintain the global distribution result and satisfy the fixed-outline constraint, generate a slicing tree by recursively applying partition algorithm to divide modules distributed in a given region into several sub-regions. Then, to remove overlap between circuit modules and find a best solution, use bottom-up shape curve merging and top-down back tracing procedure to generate a slicing tree. The shape curve for each leaf in the tree is built first by enumerated packing. Then, the curves in the tree are merged iteratively from bottom to top, and feasible solutions in the shape curve of the root node are identified according to the fixed-outline constraint. Finally, the best solution is determined by a top-down back tracing procedure.

Abstract: Aspects of the invention relate to yield analysis techniques for generating root cause distribution information. Suspect information for a plurality of failing dies is first generated using a layout-aware diagnosis method. Based on the suspect information, potential root causes for the plurality of failing dies, and suspect feature weights and total feature weights for each of the potential root causes may then be determined. Next, the probability information of observing a particular suspect that is related to a particular root cause may be extracted. Finally, an expectation-maximization analysis may be conducted for generating the root cause distribution information based on the probability information and the suspect information. Heuristic information may be used to prevent the analysis from over-fitting.

Abstract: Scheduling of parallel processing for regionally-constrained object placement selects between different balancing schemes. For a small number of movebounds, computations are assigned by balancing the placeable objects. For a small number of objects per movebound, computations are assigned by balancing the movebounds. If there are large numbers of movebounds and objects per movebound, both objects and movebounds are balanced amongst the processors. For object balancing, movebounds are assigned to a processor until an amortized number of objects for the processor exceeds a first limit above an ideal number, or the next movebound would raise the amortized number of objects above a second, greater limit. For object and movebound balancing, movebounds are sorted into descending order, then assigned in the descending order to host processors in successive rounds while reversing the processor order after each round. The invention provides a schedule in polynomial-time while retaining high quality of results.

Abstract: Methods and apparatuses for routing traces in a layout design, such as for example a layout design for an integrated circuit, are disclosed. In various implementations, a group of netlines within a layout design and a freeform sketch are identified. Subsequently, the netlines are routed as traces according to the freeform sketch. More particularly, the geometry of the traces is determined by approximating the geometry of the freeform sketch. Various implementations of the invention provide for the netlines to be routed by an automated trace routing engine. With further implementations of the invention, ball grid array escapes and trace fanouts are additionally routed. For example, ball grid array escapes may be routed prior to netlines being routed according to the freeform sketch. In further implementations of the invention, the freeform sketch is deleted after the traces have been routed.

Abstract: Embodiments of present invention include a method and apparatus of estimating power supply of a 3D IC. The method particularly includes obtaining current information and layout information of circuit modules contained in a specific region of the 3D IC, gridding the specific region so as to form at least one three-dimensional grid having a plurality of side edges along chip stacking direction of the 3D IC, determining current of at least one of the plurality of side edges based on the current information and layout information of the circuit modules, and estimating power supply of the 3D IC based on the current of the at least one side edge. With the method and apparatus embodiments of the invention, power supply of a 3D IC may be effectively estimated and analyzed.

Abstract: An island-based network flow processor (IB-NFP) integrated circuit includes rectangular islands disposed in rows. In one example, the configurable mesh data bus is configurable to form a command/push/pull data bus over which multiple transactions can occur simultaneously on different parts of the integrated circuit. The rectangular islands of one row are oriented in staggered relation with respect to the rectangular islands of the next row. The left and right edges of islands in a row align with left and right edges of islands two rows down in the row structure. The data bus involves multiple meshes. In each mesh, the island has a centrally located crossbar switch and six radiating half links, and half links down to functional circuitry of the island. The staggered orientation of the islands, and the structure of the half links, allows half links of adjacent islands to align with one another.

Abstract: A method of designing a charge trapping memory array including designing a floating gate memory array layout. The floating gate memory layout includes a first type of transistors, electrical connections between memory cells of the floating gate memory array layout, a first input/output (I/O) interface, a first type of charge pump, and an I/O block. The method further includes modifying the floating gate memory array layout, using a processor, to replace the first type of transistors with a second type of transistors different than the first type of transistors. The method further includes determining an operating voltage difference between the I/O block and the second type of transistors. The method further includes modifying the floating gate memory array layout, using the processor, to modify the first charge pump based on the determined operating voltage difference.

Abstract: A nonvolatile memory (“NVM”) bitcell with one or more active regions capacitively coupled to the floating gate but that are separated from both the source and the drain. The inclusion of capacitors separated from the source and drain allows for improved control over the voltage of the floating gate. This in turn allows CHEI (or IHEI) to be performed with much higher efficiency than in existing bitcells, thereby the need for a charge pump to provide current to the bitcell, ultimately decreasing the total size of the bitcell. The bitcells may be constructed in pairs, further reducing the space requirements of the each bitcell, thereby mitigating the space requirements of the separate capacitor/s. The bitcell may also be operated by CHEI (or IHEI) and separately by BTBT depending upon the voltages applied at the source, drain, and capacitor/s.

Abstract: A finFET block architecture suitable for use of a standard cell library, is based on an arrangement including a first set of semiconductor fins in a first region of the substrate having a first conductivity type, and a second set of semiconductor fins in a second region of the substrate, the second region having a second conductivity type. A patterned gate conductor layer including gate traces in the first and second regions, arranged over channel regions of the first and second sets of semiconductor fins is used for transistor gates. Patterned conductor layers over the gate conductor layer are arranged in orthogonal layout patterns, and can include a plurality of floating power buses over the fins in the first and second regions.

Abstract: A method for migrating a hierarchical layout between manufacturing processes is accomplished without specification of a technology file and design rules. Different scaling factors and bias values in the X and Y directions may be applied to each layer in the source hierarchical layout during the migration. In addition, the target hierarchical layout maintains connectivity, and is free of notches, jogs and small edges. A cell hierarchy tree is created, which guides expansion of the target hierarchical database to resolve issues related to rounding of floating point numbers to integers. Boolean operations are performed to determine the differences between target flat database and the target hierarchical database. The differences are eliminated by modifying the target hierarchical database to match the layout in the flat database.

Abstract: A method is disclosed for defining an integrated circuit. The method includes generating a digital data file that includes both electrical connection information and physical topology information for a number of circuit components. The method also includes operating a computer to execute a layout generation program. The layout generation program reads the electrical connection and physical topology information for each of the number of circuit components from the digital data file and automatically creates one or more layout structures necessary to form each of the number of circuit components in a semiconductor device fabrication process, such that the one or more layout structures comply with the physical topology information read from the digital data file. The computer is also operated to store the one or more layout structures necessary to form each of the number of circuit components in a digital format on a computer readable medium.

Abstract: A non-transitory computer-readable memory including first data representative of a topology of a circuit including a first circuit element and a second circuit element, and second data representative of a scaling rule for the first circuit element as a function of the second circuit element. A data processing method comprising retrieving first data representative of a topology of a circuit comprising a first circuit element and a second circuit element from a memory, retrieving second data representative of a scaling rule for the first circuit element as a function of the second circuit element from the memory, receiving a user input representative of a scaling factor, generating third data representative of an instance of the second circuit element using the scaling factor, and generating data representative of an instance of the first circuit element using the scaling factor, the scaling rule and the third data.

Abstract: Methods and apparatus for routing signal paths in an integrated circuit. One or more signal routing paths for transferring signals of the integrated circuit may be determined. A dummy fill pattern for the integrated circuit may be determined based on the one or more metal density specifications and at least one design rule for reducing cross coupling capacitance between the dummy fill pattern and the routing paths. The signal routing paths and/or the dummy fill pattern may be incrementally optimized to meet one or more timing requirements of the integrated circuit.

Abstract: A library of cells for designing an integrated circuit, the library comprises continuous diffusion compatible (CDC) cells. A CDC cell includes a p-doped diffusion region electrically connected to a supply rail and continuous from the left edge to the right edge of the CDC cell; a first polysilicon gate disposed above the p-doped diffusion region and electrically connected to the p-doped diffusion region; an n-doped diffusion region electrically connected to a ground rail and continuous from the left edge to the right edge; a second polysilicon gate disposed above the n-doped diffusion region and electrically connected to the n-doped diffusion region; a left floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the left edge; and a right floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the right edge.

Abstract: At least nine linear-shaped conductive structures (LCS's) are positioned in accordance with a first pitch. Five of the at least nine LCS's collectively form three transistors of a first transistor type and three transistors of a second transistor type. Transistors of the first transistor type are collectively separated from transistors of the second transistor type by an inner region. Two transistors of the first transistor type and two transistors of the second transistor type are cross-coupled transistors. Each of four LCS's corresponding to the cross-coupled transistors has a respective electrical connection area located within the inner region. The two LCS's corresponding to the two transistors of the first transistor type of the cross-coupled transistors have electrical connections areas that are not aligned with each other. The four LCS's corresponding to the cross-coupled transistors include at least two different inner extension distances beyond their respective electrical connection areas.

Abstract: Various embodiments identify a design including circuit features and identify an operation that produces an aggressor for victim(s). The operation on the aggressor and the set of victims are implemented using local maximally spanning spacetile(s) while satisfying some design requirements. Where the set of victims includes interconnects, the design may allow no bend in some interconnects. One or more spacetiles are used to perform the operation on the aggressor and implement the interconnects while introducing no bends in the interconnects by using local maximally spanning spacetile(s). Some implementation may perform block modeling for the aggressor to perform the operation on the aggressor and implement a set of victims while preserving the relative order of the interconnects by using the block modeling for the aggressor.

Abstract: Systems and techniques for creating a netlist abstraction are described. During operation, an embodiment can receive a netlist for a circuit design, wherein circuit elements in the circuit design are organized in a logical hierarchy (LH). Next, the embodiment can receive a set of LH nodes in the LH. The embodiment can then create the netlist abstraction by, for each LH node in the set of LH nodes, replacing a portion of the netlist that is below the LH node by a star netlist, wherein the star netlist includes a center object that is electrically connected to a set of satellite objects, wherein each satellite object corresponds to a port of the LH node.