Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) assembly including a VCSEL structure having a light-emitting region located on its surface, a relatively wettable region of a surface modifier coating formed over the light emitting region, and a microlens formed on the relatively wettable region. A relatively non-wettable region of the surface modifier coating is formed around the light-emitting region (e.g., on the electrode surrounding the light-emitting region). The surface modifier coating is formed, for example, from one or more organothiols that change the surface energies of the light-emitting region and/or the electrode to facilitate self-assembly and self-registration of the microlens material. The microlens material is printed, microjetted, or dip coated onto the VCSEL structure such that the microlens material wets to the relatively wettable region, thereby forming a liquid bead that is reliably positioned over the light-emitting region. The liquid bead is then cured to form the microlens.

Abstract: A method of forming spring structures using a single lithographic operation is described. In particular, a single lithographic operation both defines the spring area and also defines what areas of the spring will be uplifted. By eliminating a second lithographic operation to define a spring release area, processing costs for spring fabrication can be reduced.

Abstract: Statistical timing analysis techniques can be used to lead to the construction of robust circuits in a consistent manner through the entire design flow of synthesis, placement and routing. An exemplary technique can include receiving library data for a design including timing models. By comparing implementations of this data, a robust circuit can be defined based on a set of criteria, which can include worst negative slack, endpoint slack distribution, timing constraint violations, and total negative slack. At this point, statistical timing analysis can be used to drive logic changes that generate improved robustness in the design. The statistical timing analysis can use a static timing delay associated with the arc in statistical timing analysis as a mean and a specified percentage of the mean as the standard deviation.

Abstract: An electronic device includes multiple IC dies stacked in an offset stacking arrangement on a substrate. Each IC die includes electrically isolated step pads that facilitates transmitting a dedicated signal between a (beginning) substrate bonding pad and a selected (terminal) contact pad of any die by way of short bonding wires that extend up the stack between the electrically isolated step pads. A memory devices includes stacked memory IC die, wherein “shared” signal transmission paths are formed by associated bonding wires that link corresponding contact pads of each memory die, and dedicated select/control signals are transmitted to each memory die by separate transmission paths formed in part by associated electrically isolated step pads. Substrate space overhung by the stack is used for passive components and IC dies. Memory controller die may be mounted on the stack and connected by dedicated transmission paths utilizing the electrically isolated step pads.

Abstract: An impedance matching logic generates code values that define pull-up and pull-down transistors to be enabled with output buffers. The output buffers store the code values using a two-stage latch configuration, such that updated code values are always stored within the output buffer, even if the output buffer is driving an output signal when the updated code values are received. The impedance matching logic uses previously determined code values to shorten the time required to calculate updated code values. The impedance matching logic may be operated in response to a clock signal having a frequency lower than the frequency of the output clock signal used to control the output buffers. The impedance matching logic may adjust the code values by certain percentages using a multiplication function, thereby allowing for design fine tuning (e.g., due to layout mismatch).

Abstract: An electronic data flash card with fingerprint capability is accessible by an host computer, and includes a processing unit connected to a flash memory device that stores a data file and reference fingerprint data of a person authorized to access the data file, a fingerprint sensor for scanning the fingerprint of a user and for generating input fingerprint data that can be compared with the stored reference fingerprint data, and an input-output interface circuit activated so as to establish a communication with the host computer. In an embodiment, the electronic data flash card uses a USB input/output interface circuit for communication with the host computer.

Abstract: A reference image is generated from a subject image of at least a portion of a photolithography mask to enable a photolithography mask inspection and analysis system that otherwise cannot generate a reference image from a reference die or digitized design data, for example, to perform a mask analysis using the reference image. A mask inspection and analysis system may then be enhanced to perform one or more additional mask analyses to analyze the mask. The reference image is generated by identifying a defect or contaminant of the mask in the subject image and modifying the subject image to remove the defect or contaminant from the mask to generate the reference image. For one embodiment, a system using a STARlight inspection tool that captures transmitted and reflected images of a portion of a mask may then be enhanced to perform one or more mask analyses that use a reference image.

Abstract: A method and apparatus for scaling an embedded DRAM array from a first process to a second process, wherein the scaling involves reducing the linear dimensions of features by a constant scale factor. From the first process to the second process, DRAM cell capacitor layout area is reduced by the square of the scale factor, while cell capacitance is reduced by the scale factor. The voltage used to supply the logic transistors is scaled down from the first process to the second process. However, the voltage used to supply the sense amplifiers remains constant in both processes. Thus, in an embedded DRAM array of the second process, sense amplifiers are supplied by a greater voltage than the logic transistors. This allows the sensing voltage of DRAM cells to be maintained from one process generation to another, while allowing memory size to scale with the square of the process scale factor.

Abstract: A nonvolatile memory integrated circuit arrayed in rows and columns is disclosed. Parallel lines of implant N-type regions are formed in a P-well of a semiconductor substrate, with lines of oxide material isolating each pair of the lines. Columns of memory cells straddle respective pairs of the implant region lines, with one line of the pair forming the source region and one line of the pair forming the drain region of each memory cell of the column. Each memory cell has a floating polysilicon storage gate. One of plural wordlines overlies each row of the memory cells. The portion of the wordline overlying each memory cells forms the control gate of the memory cell. Programming and erase operations occur by Fowler-Nordheim tunneling of electrons through a tunnel oxide layer between the floating gate and the source of the cell.

Abstract: A CMOS image sensor (CIS) device includes an array of pixels, each pixel including a sensing element (e.g., a photodiode) and access circuitry. To facilitate the passage of light to the photodiode, each pixel includes a via wave guide (VWG) defined in the metallization layer formed over the pixel's photodiode. The VWG includes an upper light concentrator having a curved (e.g., parabolic) surface extending from a relatively wide upper opening to a relatively small lower opening. The VWG also includes a lower section extending between the lower opening of the light concentrator and the associated photodiode. A mirror coating is optionally formed on the surface of the VWG. An optional light-guiding material and/or color filter materials are disposed inside the VWG. An optional microlens is formed over the VWG.

Abstract: A structure and method of using a reusable master printing plate is described. In one embodiment, the viscosity of an electrorheological fluid is adjusted using an electric field to control its flow and create the desired relief pattern in a flexible printed surface. After creating the relief pattern, the pattern is fixed and used for printing. After completion of printing, the relief pattern is removed from the master printing plate and the printing plate may be reused by applying a new pattern.

Abstract: A single-poly electrically erasable/programmable CMOS logic memory cell for mobile applications includes a CMOS inverter that share a single polysilicon floating gate, and an enhanced control capacitor including a control gate capacitor and an optional isolated P-well (IPW) capacitor formed below the control gate capacitor. The control gate capacitor includes a polysilicon control gate that is interdigitated with the floating gate and serves as a capacitor plate to induce Fowler-Nordheim (F-N) injection or Band-to-Band Tunneling (BBT) to both program and erase the floating gate. The IPW capacitor is provided in the otherwise unused space below the control gate capacitor by a IPW that is separated from the control/floating gates by a dielectric layer and is electrically connected to the control gate. Both F-N injection and BBT program/erase are performed at 5V or less.

Abstract: A level shifter circuit includes two parallel current paths respectively controlled by switch transistors, a Wilson current mirror circuit, and a slew rate control circuit to selectively couple an output node either to a high (first) voltage source or to a ground (second voltage) source in response to differential input control signals signal. When the output node reaches a stable (high or low) voltage level, the low voltage on one of the current paths turns off a Wilson current mirror transistor in the other current path, thereby preventing quiescent current during stable periods. An optional cascode transistor is added to facilitate fabrication using low threshold voltage transistors.

Abstract: A method for detecting saturation in a cascaded ?? ADC can include receiving an output of the cascaded ?? ADC, determining a magnitude of the output, and squaring the magnitude. The squared magnitude can be added to a feedback signal, wherein the sum represents a saturation signal. The saturation signal can be filtered and then amplified, wherein the amplified, filtered saturation signal is the feedback signal. The saturation signal can then be compared to a threshold to determine whether the cascaded ?? ADC is in saturation.

Abstract: A compact constant current generator that can operate with a positive supply voltage of 1.22 V (or lower) and minimize noise is provided. The constant current generator can include a bandgap reference circuit and a single gain stage. Notably, the bandgap reference circuit can advantageously generate differential node voltages. The gain stage can amplify those differential node voltages and generate a constant current having a temperature coefficient substantially equal to zero. Advantageously, this single gain stage can minimize the number of components, thereby resulting in a compact and efficient current generator.

Abstract: A structure and method of using a reusable master printing plate is described. In one embodiment, the method uses an electric field to control a series of microvalves. The microvalves control a fluid flow that raises or lowers selected regions on a flexible printing surface to create a desired relief pattern. After creating the relief pattern, the pattern is fixed and used for printing. After completion of printing, the relief pattern is removed from the master printing plate and the printing plate may be reused by applying a new pattern.

Abstract: A differential circuit layout can advantageously use step symmetry for inductors and mirror symmetry for the rest of the circuit. Interconnect segments can be used to connect the terminals of the inductors to other components in the circuit. These interconnect segments facilitate the transition from the step symmetry of the inductors to the mirror symmetry of the other components. To provide this transition, the terminals of an inductor and its associated interconnect segments are formed on a middle axis of the inductor. This mixed symmetry can advantageously cancel the common-mode magnetic field, reduce the parasitic inductor coupling, and balance parasitic wiring capacitances between the two sides of the differential circuit.

Abstract: A capacitor for a single-poly floating gate device is fabricated on a semiconductor substrate along with low and high voltage transistors. Each transistor has a gate width greater than or equal to a minimum gate width of the associated process. A dielectric layer is formed over the substrate, and a patterned polysilicon structure is formed over the dielectric layer. The patterned polysilicon structure includes one or more narrow polysilicon lines, each having a width less than the minimum gate width. The LDD implants for low and high voltage transistors of the same conductivity type are allowed to enter the substrate, using the patterned polysilicon structure as a mask. A thermal drive-in cycle results in a continuous diffusion region that merges under the narrow polysilicon lines. Contacts formed adjacent to the narrow polysilicon lines and a metal-1 trace connected to the contacts may increase the resulting capacitance.

Abstract: Systems and methods for passively calibrating and correcting for I/Q mismatch in a quadrature receiver without the necessity of modifying the analog portion of the receiver by adding calibration signals or correction circuitry are presented. The passive I/Q mismatch calibration system proceeds using normally received incoming transmitted data signals to obtain statistical information on which to base I/Q mismatch compensation factors. The I/Q mismatch compensation factors can be used to adjust the magnitude and phase response in the time domain or the frequency domain, the analog or the digital portion of the receiver. Depending on the embodiment, the passive I/Q mismatch calibration system can calibrate frequency dependent gain or magnitude imbalance, frequency independent magnitude imbalance, frequency dependent phase imbalance, and frequency independent phase imbalance or combinations or these.

Abstract: A high-speed universal serial bus (USB) transceiver includes a voltage-mode architecture for generating a USB signal. The voltage mode architecture reduces power consumption by reducing the current requirements for high-speed USB communications. The USB transceiver can include a reference voltage generator, a resistive element, and a switching element for completing and breaking a circuit including the reference voltage generator, the resistive element, and a data pin of a USB port to generate half of the differential USB signal (e.g., the D+ signal). A similar circuit can be used to generate the other half of the differential USB signal (i.e., the D? signal). The resistive element can be a set of parallel resistors in the transceiver, with the set of parallel resistors being specifically selected from a larger population of resistors to provide the specified resistance (45 ?±10%) in the USB transceiver.