Abstract: A light emitting device comprises a substrate, a first confining layer overlying the substrate, an active layer overlying the first confining layer, a second confining layer overlying the active layer and a capping layer overlying the second confining layer. The improvement is the interposition of an absorber layer which absorbs light at the wavelength of the emission between the substrate and the first confining layer and a capping layer which absorbs light at the wavelength of the emission. The improved device exhibits an output beam which has a narrow angular intensity pattern in the plane perpendicular to the plane of the layers and to the end surfaces of the device.
Abstract: A method of forming a blazed grating in a surface of a body comprising the steps of forming a patterned layer having a grating therein overlying the surface of the body, non-uniformly coating the surface of the grating with a masking layer and exposing the non-uniformly coated surface to a material removal means which preferentially removes the patterned layer where it is uncoated and the surface of the body producing an asymmetric groove pattern in the surface of the body.
Abstract: A method of selectively removing a portion of a layer of material on a substrate by oxygen plasma etching utilizing a mask of a resist material comprising a poly(silane sulfone) copolymer.
Type:
Grant
Filed:
November 10, 1981
Date of Patent:
November 2, 1982
Assignee:
RCA Corporation
Inventors:
Kurt B. Kilichowski, Thomas R. Pampalone
Abstract: An improvement in the formation of multilayer metallization systems wherein vias are formed in a dielectric insulating layer of polyimide which overlies a layer of metal such as aluminum. In accordance with the invention, the residual film remaining after oxygen plasma etching of the polyimide is efficiently removed by a second plasma etching utilizing a mixture of argon and hydrogen.
Abstract: An improved method is provided for the manufacture of records, molds, and stampers in which the matrix on which the molds and stampers are electroformed is subjected to demagnetization prior to electroforming to prevent tramp metal particles from adhering to the surface of the matrix and thereby causing microdefects in the electroformed parts.
Abstract: An improved liner for crucibles and dies used to melt silicon comprising one or more sheets of graphite each of which has on at least the surface facing the silicon melt a layer of silicon nitride or silicon oxynitride.
Type:
Grant
Filed:
March 13, 1981
Date of Patent:
October 26, 1982
Assignee:
RCA Corporation
Inventors:
Samuel Berkman, Michael T. Duffy, Harold E. Temple
Abstract: A method of forming a mesa in a semiconductor device comprises forming a plurality of such devices on a wafer, mechanically cutting relatively wide channels to a predetermined depth in said wafer at positions around individual ones of the devices to partially separate the devices from each other. The mechanical cutting technique defines mesa walls and plain surfaces between individual devices. These channels are then etched to repair scars caused by the cutting technique and, thereafter, the wafer is broken along the center line of the channels to separate the devices from each other.
Type:
Grant
Filed:
October 29, 1980
Date of Patent:
October 26, 1982
Assignee:
RCA Corporation
Inventors:
Salvadore P. Barlett, Daniel J. Dougherty, Frederick P. Lokuta
Abstract: A thin film thickness monitor uses the successive reflection of polychromatic light from a reference or standard thin film having a varying optical thickness (n.sub.1 t.sub.1) and then from a thin film of unknown thickness (t.sub.f) or optical thickness (n.sub.f t.sub.f). The reflected intensity of light from the thin film is detected to provide a signal indicating when the optical thickness of the unknown film is equal to the optical thickness of the reference.
Abstract: Partially devitrified porcelain compositions are provided which are comprised of a mixture, based on its oxide content, of barium oxide (BaO), magnesium oxide (MgO) or a mixture of magnesium oxide with certain other oxides (CaO,ZnO), boron trioxide (B.sub.2 O.sub.3) and slicon dioxide (SiO.sub.2). In accordance with this invention the porcelain compositions are applied to the metal core and fired to provide a partially devitrified porcelain coating on the metal core. The coating has a very low viscosity at its initial fusion point and then almost instantaneous high viscosity due to partial devitrification. The fired coating has a deformation temperature of at least 700.degree. C. and a high coefficient of thermal expansion of at least about 110.times.10.sup.-7 /.degree.C.
Abstract: This invention relates to novel terpolymers of 3-methylcyclopentene, an omega alkynoic acid and sulfur dioxide. Positive radiation sensitive films prepared from the subject terpolymers adhere well to the substrate, demonstrate resistance to cracking and erosion during development and possess excellent edge definition.
Type:
Grant
Filed:
March 16, 1981
Date of Patent:
October 19, 1982
Assignee:
RCA Corporation
Inventors:
Thomas R. Pampalone, Kurt B. Kilichowski
Abstract: A semiconductor laser diode includes a substrate of indium phosphide of one conductivity type having on a surface thereof an indium phosphide first confinement layer of the same conductivity type followed by an active layer of indium gallium arsenide phosphide and an indium phosphide second confinement layer of the opposite conductivity type. On the second confinement layer is an indium gallium arsenide phosphide capping layer of either conductivity type having a stripe shaped opening therethrough. In the opening in the capping layer is a contact layer of indium gallium arsenide phosphide of the opposite conductivity type. The confinement layers, the active layer and the capping layer are formed by liquid phase epitaxy and the contact layer is formed by vapor phase epitaxy.
Abstract: Borosilicate glass frit with MgO as a major component for forming partially devitrified porcelain compositions are provided which are comprised of a mixture, based on its oxide content, of barium oxide (BaO), magnesium oxide (McO) or a mixture of magnesium oxide with certain other oxides, boron trioxide (B.sub.2 O.sub.3) and silicon dioxide (SiO.sub.2). In accordance with this invention the porcelain compositions are applied to the metal core and fired to provide a partially devitrified porcelain coating on the metal core. The coating has a very low viscosity at its initial fusion point and then almost instantaneous high viscosity due to partial devitrification. The fired coating has a deformation temperature of at least 700.degree. C. and a high coefficient of thermal expansion of at least about 110.times.10.sup.-7 /.degree.C.
Abstract: Bis(hydroxyalkyl)disiloxane lubricants of the formula ##STR1## wherein R.sub.1 and R.sub.3 are methyl or ethyl and R.sub.2 and R.sub.4 are linear alkyl groups of up to 20 carbon atoms. These compounds are useful as additives to methyl alkyl siloxane lubricants for conductive high density information discs. Discs lubricated with the lubricant mixture exhibit improved stability to environments of high temperature and high relative humidity.
Abstract: An improved method for preparing an abrasive SiO.sub.x coating wherein 1.ltoreq.x.ltoreq.2. The method includes the steps of submitting SiH.sub.4 and N.sub.2 O to glow discharge and depositing the SiO.sub.x product of the glow discharge onto a substrate. The improvement includes the additional step of adjusting the refractive index and thickness of the SiO.sub.x coating by means of the glow discharge deposition process parameters so as to maximize the abrasiveness of the SiO.sub.x coating.
Abstract: A variable sweep means connects the rotating shaft of an electric motor to a rotatable gas manifold in a rotary disc reactor to convert rotation of the shaft into reciprocating oscillation of the gas manifold. A cycle timing control means for varying electric motor speed at two independent speeds is connected to the electric motor. The control means varies the oscillation speed of the gas manifold at two sweep rates by varying electric motor speed automatically during each sweep cycle.
Abstract: A method of forming buried contacts that eliminates the possibility of the inadvertent removal of portions of the silicon body is described wherein a patterned nitride masking layer is formed on portions of conductive interconnects and gate lines. Thereafter, a second oxide layer is grown in order to surround the masking nitride layer. The nitride layer may now be easily removed using a hot phosphoric acid dip which will etch away only the nitride layer to form contact openings in the oxide layer without affecting the underlying layer.
Abstract: A method of preparing an abrasive silicon oxide coating on a substrate which includes glow discharging silane and N.sub.2 O in the presence of a substrate whereby a first silicon oxide layer having a refractive index of between about 1.0 and 1.2 as measured by ellipsometry is deposited. A second silicon oxide layer having a refractive index of between about 1.30 and 1.48 as measured by ellipsometry is glow discharge deposited onto the first layer.
Abstract: The surface quality of a semiconductor material is determined by exposing the semiconductor surface to two light beams of different wavelengths or wavelength ranges (e.g. ultraviolet and near ultraviolet). A portion of each of the respective light beams is reflected from the semiconductor surface. The intensity of each reflected beam is measured to obtain an intensity difference whereby the magnitude of the difference is a measure of the quality of the semiconductor material.
Type:
Grant
Filed:
September 22, 1980
Date of Patent:
September 28, 1982
Assignee:
RCA Corporation
Inventors:
Michael T. Duffy, John F. Corboy, Jr., Peter J. Zanzucchi
Abstract: The surface quality of a semiconductor material is determined by exposing the semiconductor surface to two light beams of different wavelengths or wavelength ranges (e.g. ultraviolet and near ultraviolet). A portion of each of the respective light beams is reflected from the semiconductor surface. The intensity of each reflected beam is measured to obtain an intensity difference whereby the mangitude of the difference is a measure of the quality of the semiconductor material.
Abstract: High density information discs are lubricated with a silyl quaternary ammonium salt of the formula ##STR1## wherein R is a lower alkyl group of 1-5 carbon atoms; R.sub.3 is methyl or ethyl; R.sub.4 is an alkyl group of 1-12 carbon atoms and X is --OSO.sub.2 --(CH.sub.2).sub.n CH.sub.3 wherein n is an integer of 5-12. Discs lubricated with this lubricant exhibit improved stability to high temperature, high relative humidity environments.