Abstract: A reversible optical recording medium is comprised of an electrically conductive layer overlain by a thermoplastic layer containing a light absorptive compound selected from the group consisting of metal complexes of substituted ethylene dithiols having the structure ##STR1## where M is Pt, Pd, or Ni and R and R' are independently alkyl, phenyl or substituted phenyl groups. Information is recorded by sequentially charging the recording medium and then heating it above its softening temperature by absorption of the recording light beam in the thermoplastic layer.

Abstract: The method involves the formation of conductive, polycrystalline silicon lines and vias by the conversion of amorphous silicon in contact with the underlying silicon substrate through the use of a laser annealing process.

Abstract: A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorous. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells.

Abstract: A gas drying system for use in removing a liquid from a substrate comprises a carrier adapted to support the substrate wherein the parts of the carrier that make contact with the substrate have a surface wettable by the liquid and the wettable surface has a roughened surface of a material that is capable of being hydroxylated, and a dryer for exposing the substrate to a stream of ambient-temperature gas.

Abstract: A Metal-Oxide-Semiconductor-Field Effect Transistor (MOSFET) is described wherein a body of semiconductor material is provided with source, drain and channel regions. A gate structure is provided over the interstitial channel region of the semiconductor body between the drain and source regions, one edge of which is aligned with the source region. The remainder of the channel region, between the other edge of the gate structure and the adjacent edge of the drain region is provided with a drift region of a conductivity type that is the same as the source and drain.

Abstract: An amorphous silicon material, fabricated by the process of a glow discharge in silane, is utilized as the body of semiconductor devices.

Abstract: A vapor phase deposition apparatus includes a coaxially mounted reactor tube, jacketed assembly tube, bearing/plug assembly, and rod/substrate holder. Gas inlets are provided in the reactor tube, and assembly tube and a vent is provided on the jacketed portion of the assembly tube, such that a double counterflow gas pattern can be established in the apparatus. The apparatus permits controllable deposition cycle and it can be readily disassembled for periodic maintenance.

Abstract: Amphoteric fluorocarbon surfactants when added to acid copper plating baths which contain brighteners will substantially reduce or eliminate occluded hydrogen in the deposited copper without adversely affecting the properties of the copper and in particular the brightness of the copper.

Abstract: A spacer for use between two adjacent recorded discs in a stack of the discs includes a flat, circular, relatively rigid plate having opposed major surfaces and a hole through the center thereof. The plate has portions around its peripheral edge and the edge of the hole which are thicker than the rest of the plate and project beyond the major surfaces of the plate. The thicker portions of the spacer engage unrecorded surface portions of the adjacent recorded discs so as to space the recorded portions of the adjacent recorded discs from the major surfaces of the spacer plate to prevent dust, dirt and other contaminating particles from being pressed into or against the recorded portions of the recorded discs which may damage the recorded discs.

Abstract: A device and method for forming the device formed of semiconductor material provides metallization for the circuit and passivation of a rectifying junction in but a single photolithographic etching step. The device may be formed of silicon, gallium arsenide or silicon-on-sapphire. The rectifying junctions may be formed of material of opposite conductivity types or may be of the Schottky barrier type in which metal in contact with a semiconductor material forms a rectifying junction. Metal is initially deposited at suitable temperatures over all the surface of a body of material having rectifying junctions. The metal over the junctions is removed by a photolithographic resist process leaving the rectifying junctions clear of metal. The metal or metals are then heat treated at high temperatures. The rectifying junction is passivated by amorphization and hydrogenation at relatively low temperatures to provide the device with a passivated junction of graded crystallinity.

Abstract: A method is provided for the manufacture of a capacitive pickup stylus. In the method of this invention an elongated stylus blank is prepared from a hard dielectric material such as diamond. The blank is formed into an elongated bar having substantially symmetrical diagonal cross-sectional halves along the length thereof and having opposing polished surfaces with one of the polished surfaces being on each of the diagonal cross-sectional halves. Thereafter, one of the cross-sectional halves is masked by a jig or the like and the other half which remains exposed is sputter coated with a conductive material. The coated stylus blank is then machined to provide a tip on a terminal end thereof with the coated polished surface positioned as the rearward electrode carrying surface of the stylus.

Abstract: A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

Abstract: An optical recording medium comprises a light reflecting material which is coated with a light absorbing layer and overcoated with a 0.05-1 millimeter thick layer of an optically transparent and chemically and thermally stable material such as a silicone resin. During recording, portions of the light absorbing layer are ablated or melted by a modulated focussed light beam, thereby exposing portions of the reflecting layer while leaving the overcoat layer intact. Information is recorded in the form of a reflective-antireflective pattern. Dust particles and other surface contaminants settle on the upper surface of the overcoat layer, so far removed from the focal plane of the recording lens that their effect on the recording or playback signal is considerably reduced, and no defect is noticeable on the playback monitor.

Abstract: A novel process for improving the operation of silicon-on-sapphire devices by removing or minimizing edge current leakage. The reduction in leakage current is accomplished by subjecting the completed device to a sputtering operation and depositing thereon a layer of, for example, aluminum which is subsequently removed prior to scribing and dicing.

Abstract: A Schottky barrier contact is formed by depositing the conductor portion of the Schottky barrier contact on a surface of a semiconductor from which a conductivity determining dopant has been leached to create a surface region of reduced dopant concentration. This process is compatible with the formation of an ohmic contact to an increased conductivity portion of the semiconductor material, an unleached portion of the semiconductor material or to a leached portion of the semiconductor material.

Abstract: A method for fabricating a submicron short channel MOS device is described wherein a plural or multilevel insulator layer, having a thickness of about 100-200 angstroms, is interposed between the polycrystalline silicon gate member and the substrate to function as a gate insulator and in addition, serving to protect the body of the semiconductor from becoming inadvertently doped during the processing steps.

Abstract: A short channel insulated gate field effect transistor, suitable for use in high speed integrated circuits is described as being manufactured by a self-aligned process in which the gate electrode is formed by a selective etching technique. In practicing the process, an etch limiting element is laterally diffused from an adjacent solid source into a polycrystalline silicon layer. In one embodiment, a portion of the solid source serves as a mask in another step of the process to define the length of a drain extension region.

Abstract: An ablative optical recording medium comprises a substrate coated with a light reflecting coating of passivated aluminum which in turn is coated with a light absorbing ablative layer. During recording, portions of the light absorbing layer are ablated, or vaporized, by a modulated focussed light beam, thereby exposing portions of the reflective layer. Information is recorded in the form of a reflective-antireflective pattern.

Abstract: A cathode mask knob is disclosed which has a metal insert for holding a matrix in mechanical and electrical contact with the end of the cathode of an electroforming apparatus. The knob further has a resiliant seal around the insert and an outer shield of a dielectric material.

Abstract: A light detector housing in which the light detector is mounted directly on the central conductor of a coaxial transmission line and in which an electrically conducting sheet extends around the light detector forming an rf ground plane in close proximity to the detector. One or a plurality of capacitors provide a low impedance electrical connection at rf frequencies and a high impedance at zero frequency between the header of the housing and the electrically conducting sheet.