Abstract: An ablative recording medium comprises a substrate coated with a light reflecting coating which in turn is coated with a light absorptive layer selected from the group consisting of lead phthalocyanine, chloroaluminum phthalocyanine, vanadyl phthalocyanine, stannic phthalocyanine and chloroaluminum chlorophthalocyanine. During recording, portions of the dye layer are ablated or vaporized by an intensity modulated focussed light beam, thereby exposing portions of the reflective layer and recording video information as a reflective-antireflective pattern.

Abstract: A polyvinyl chloride based molding composition containing polymer grafted conductive carbon particles has good processability, low heat distortion temperature and good dispersion of the conductive particles and can be molded to form video discs of improved electrical properties.

Abstract: A complementary MOS integrated circuit device, adapted for fabrication with relatively high circuit density, includes relatively fast transistors with a closed gate geometry. Permanently-off gates surround transistors to isolate them from other transistors.A method of making this structure involves self-aligned gate techniques in which the sources and drains are defined as regions which surround the gates and are surrounded by the gates, respectively.

Abstract: The method entails vibrating the wafer during the exposure of the photoresist in order to eliminate standing waves which occur in layers parallel to the surface of the photoresist layer and which cause alternately exposed and unexposed layers of the photoresist to be present.

Abstract: The invention is a memory device which includes a metal-nitride-oxide semiconductor (MNOS) insulated gate field effect transistor (IGFET) which is built in series with the emitter of a bipolar transistor to provide both bipolar collector-to-emitter breakdown voltage capability and bipolar radiation hardness while retaining MNOS memory performance.

Abstract: Recording media comprising a film of a polymer having a repeating unit of the formula ##STR1## wherein R is an alkyl or acyl group and n is an integer are suitable for recording information with electron beams.

Abstract: A method of inspecting electrical devices such as integrated circuit devices which have conductors covered by a protective layer of passivating material to determine the quality of the protective layer includes treating the circuit with a fluorescein containing dye and exposing the treated device to UV radiation while applying a voltage between two conductors. Fluorescence is observable in well passivated areas of the device but not in unpassivated or inadequately passivated areas. When a device is tested before dicing from a wafer, adjacent devices to which no voltage is applied fluoresce in both passivated and unpassivated areas.

Abstract: A process of producing a photoresist pattern on a circuit board including applying a casein based photoresist film of a thickness of at least 4.0 micrometers to a circuit board, air drying the film, exposing the dried film to actinic radiation through a photomask and developing the exposed photoresist film with soft water to wash away the unexposed areas of the film, thereby leaving an etch resistant pattern of photoresist on the circuit board.

Abstract: A Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) is described wherein a body of semiconductor material is provided with source, drain and channel regions and a gate structure located over the interstitial channel portion of the semiconductor body, between the source and drain regions. A stepped or dual thickness oxide layer, having one portion of minimum thickness formed over only a portion of the channel region and another portion of maximum thickness formed over the remaining portion of the channel region. This stepped oxide layer, together with the gate electrode, forms the gate structure. That portion of the channel region covered by the portion of minimum thickness oxide is separated from the drain region, and the portion of maximum thickness oxide is also located over both a portion of the drain region and that portion of the channel region adjacent the drain region.

Abstract: In making a laser diode by a method which includes epitaxially depositing a plurality of layers of a semiconductor material on a substrate, the final outermost layer deposited is of a material which has a band-gap lower than the preceding adjacent layer, which readily accepts a conductivity modifier, which can be selectively etched from the preceding adjacent layer and which preferably has a lattice parameter substantially equal to that of the preceding adjacent layer. A conductivity modifier is then diffused along a narrow stripe into and through the outermost layer, into the preceding adjacent layer. The outermost layer is then etched away to expose the surface of the preceding adjacent layer and a metal contact is applied to the exposed surface.

Abstract: A light emitting diode includes a substrate having a body of single crystalline semiconductor material, preferably a Group III-V compound or alloy thereof, on a surface of the substrate. The body includes a window layer directly on the substrate and one or more other layers on the window layer. The layers of the body are of appropriate conductivety types to form a recombination region in which light can be generated. The substrate has an opening therethrough to the window layer. The window layer is of a material which is substantially transparent to the light generated in the recombination region and is of a thickness, 15 to 30 microns, to provide rigidity to the diode.

Abstract: A light pipe is inserted through the cap of a light detector housing and bonded to this cap. Light from a light transmitting fiber which impinges on the external end of the light pipe is transmitted with reduced loss of light to the light detector inside the housing.

Abstract: A Metal-Oxide-Semiconductor-Field Effect Transistor (MOSFET) is described wherein a body of semiconductor material is provided with source, drain and channel regions. A gate structure is provided over the interstitial channel region of the semiconductor body between the drain and source regions, one edge of which is aligned with the source region. The remainder of the channel region, between the other edge of the gate structure and the adjacent edge of the drain region is provided with a drift region of a conductivity type that is opposite to that of the source and drain.

Abstract: A method of making an Impatt diode capable of operating at millimeter wave frequencies in which an epitaxial layer of the thickness desired for the diode is deposited on a substrate. Conductivity modifiers are implanted into the epitaxial layer to form one active region and a high conductivity region between the one active region and the surface of the epitaxial layer. A heat sink which also serves as a handle is formed on the epitaxial layer. The substrate is removed and conductivity modifiers are implanted into the other side of the epitaxial layer to the other active region and a high conductivity region between the other active region and the other surface of the epitaxial layer. After the implants the epitaxial layer is annealed. After the first implants the epitaxial layer may be annealed by either thermal or laser annealing. However, after the second implants the epitaxial layer must be laser annealed.

Abstract: The etch resistance of a casein-based photoresist pattern to low specific gravity ferric chloride based etchant solutions is increased by treating the photoresist pattern with a formaldehyde solution containing at least 10 percent formaldehyde by volume by a period of at least 30 seconds, and thereafter drying the photoresist pattern.

Abstract: An apparatus for accurately and precisely cleaving crystalline material comprising a platform having an edge over which a workpiece projects, and a rotatable member having a scribing point and protrusion extending substantially radially therefrom. Upon rotation of the rotatable member, the arcs described by the scribing point and protrusion are substantially parallel to the platform edge, and intersect that portion of the workpiece which projects over the platform edge.

Abstract: The quality of the as-sawn surfaces of a wafer is improved by preventing the saw blade from striking the wafer surfaces during the blade return stroke by leaning the just-sawn wafer away from the blade and by slightly retracting the face of the ingot from the plane of the saw blade. A fluid-jet-induced deformation of the binding compound portion of the ingot is preferred as a means of leaning the wafer away from the saw blade. Using this technique a number of wafers may be successively sawn from an ingot and kept attached to the ingot by the binding compound without the surfaces of the wafers being scored during the return strokes of the blade.

Abstract: An improved molding composition having a bulk resistivity below about 500 ohm-cm at 900 megahertz for compression molding video discs comprising sufficient conductive carbon black particles to obtain the desired conductivity, from about 1.5 to 4 percent by weight of stabilizers, from about 1 to 3 percent by weight of at least two lubricants, up to 10 percent by weight of plasticizers and processing aids, the remainder being a polyvinylchloride based resin, with the proviso that not more than about 5 percent by weight of liquid additives are present in said molding composition. Video discs molded from said composition have improved dimensional stability.

Abstract: A cadmium boracite crystal electronic device, having at least one silver containing electrode, which is useful as a symmetric current controlling device for DC, DC pulse and AC circuits, an asymmetric current controlling device for DC and DC pulse circuits, a current rectifier for low frequency, AC, and as a temperature sensor.

Abstract: The dark conductivity and photoconductivity of an N-type and/or undoped hydrogenated amorphous silicon layer fabricated by an AC or DC proximity glow discharge in silane can be increased through the incorporation of argon in an amount from 10 to about 90 percent by volume of the glow discharge atmosphere which contains a silicon-hydrogen containing compound in an amount of from about 90 to about 10 volume percent.