Patents Represented by Attorney Birgit E. Morris

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  • Method for determining silicon content in layers of aluminum and silicon
    Patent number: 4282266
    Abstract: The method provides an extremely fast and non-destructive method for determining whether an integrated circuit will have good bonding characteristics. The method entails immersion plating of copper onto aluminum areas. Then, the aluminum areas are observed visually to see if the copper plated thereon is continuous or discontinuous. If the copper is discontinuous, the aluminum film will have good bonding characteristics.
    Type: Grant
    Filed: May 29, 1980
    Date of Patent: August 4, 1981
    Assignee: RCA Corporation
    Inventor: Albert W. Fisher
  • Input protection device for insulated gate field effect transistor
    Patent number: 4282556
    Abstract: An input protection device comprising at least one pair of N and P type MOSFETs having their conduction paths series connected between a source of operating potential and the input of the circuit to be protected. Another variation includes a second pair of similarly connected N and P type MOSFETs with one pair connected between the input to be protected and the most negative source of operating potential while the second pair is connected between the most positive source of operating potential and the input to be protected.
    Type: Grant
    Filed: May 21, 1979
    Date of Patent: August 4, 1981
    Assignee: RCA Corporation
    Inventor: Alfred C. Ipri
  • Video discs and molding compositions therefor
    Patent number: 4280941
    Abstract: A polyvinyl chloride based molding composition containing polymer grafted conductive carbon particles has good processability, low heat distortion temperature and good dispersion of the conductive particles and can be molded to form video discs of improved electrical properties.
    Type: Grant
    Filed: May 8, 1980
    Date of Patent: July 28, 1981
    Assignee: RCA Corporation
    Inventors: Pabitra Datta, Ronald N. Friel
  • Method of improving silicon crystal perfection in silicon on sapphire devices
    Patent number: 4279688
    Abstract: A process for forming a relatively defect free layer of silicon on an insulating substrate wherein as soon as growth islands are formed on the substrate, to a point just prior to the complete coverage of the substrate with silicon, the formation of the layer is temporarily terminated. The growth islands are maintained at a given temperature for a predetermined period, to allow any defects, which may have started during the initial formation of the growth island, to be self-cured or to annihilate themselves. Thereafter, the growth of silicon is continued until the desired layer thickness is achieved.
    Type: Grant
    Filed: March 17, 1980
    Date of Patent: July 21, 1981
    Assignee: RCA Corporation
    Inventors: Marvin S. Abrahams, Joseph Blanc
  • Method for releasing printed wiring boards from printed wiring board racks
    Patent number: 4279073
    Abstract: A release coating for printing wiring board racks comprises 100 parts by weight of a polyethylene glycol having a molecular weight range of from about 3000 to 3700, about 20 to about 200 parts by weight of a liquid polyethylene glycol having a molecular weight range of from about 380 to about 420, and from 0 to about 35 parts by weight of water.
    Type: Grant
    Filed: December 10, 1979
    Date of Patent: July 21, 1981
    Assignee: RCA Corporation
    Inventor: Marvin Packer
  • Method for forming an electrical contact to a solar cell
    Patent number: 4278704
    Abstract: A method of forming an electrical contact to a shallow junction silicon semiconductor device such as a solar cell comprises evaporating a sufficient amount of a metal which upon heating will form a silicide with the silicon to a predetermined depth and thereafter oxidizing the surface of the silicon so as to form a shallower junction in the unoxidized portions of said silicon. The portion of the silicon device which has formed the silicide does not oxidize and forms an electrical contact to the silicon. In addition, the metal silicide can have additional metal plated thereto to lower the sheet resistivity and resistance of the electrical contact.
    Type: Grant
    Filed: January 30, 1980
    Date of Patent: July 14, 1981
    Assignee: RCA Corporation
    Inventor: Brown F. Williams
  • Method for forming an improved gate member utilizing special masking and oxidation to eliminate projecting points on silicon islands
    Patent number: 4277884
    Abstract: A novel process is described for forming a gate member for an SOS device wherein the objectionable point that appears at the top of the silicon island is removed. The point results when an anisotropic etch is utilized to form the island. The process includes first forming a relatively thick layer of CVD oxide around sides at the base portion of the island while the remainder of the sides of the island, including the objectionable point, remain exposed for further processing in order to remove the point. The point is then heavily oxidized to form a bird beak which bird beak joins the gate oxide with the CVD oxide to produce a rounded edge.
    Type: Grant
    Filed: August 4, 1980
    Date of Patent: July 14, 1981
    Assignee: RCA Corporation
    Inventor: Sheng T. Hsu
  • Method of detecting a cathodic corrosion site on a metallized substrate
    Patent number: 4278508
    Abstract: A method of detecting a cathodic corrosion site on a metallized substrate comprises depositing molecules of a pH sensitive fluorescent dye adjacent a metallic surface of the substrate, the metallic surface having a corrosion site thereon characterized by a reduction of the hydronium ion to hydrogen (2H.sup.+ +2e.sup.- .fwdarw.H.sub.2). An electrical bias is then applied across the metallic surface, and the fluorescent dye is exposed to ultraviolet (UV) radiation, whereby fluorescence is activated at the cathodic corrosion site.
    Type: Grant
    Filed: November 13, 1979
    Date of Patent: July 14, 1981
    Assignee: RCA Corporation
    Inventors: Lawrence K. White, Robert B. Comizzoli, George L. Schnable
  • Photodiode having enhanced long wavelength response
    Patent number: 4277793
    Abstract: The light entry surface or back surface of an avalanche or p-i-n photodiode is contoured in a regular array of indentations which are hemispherical or almost hemispherical in shape. Light incident on the photodiode undergoes multiple interactions with the contoured surface, thus reducing the entry surface reflectivity and increasing the optical path length in the photodiode, and thereby enhancing its long wavelength response.
    Type: Grant
    Filed: July 16, 1979
    Date of Patent: July 7, 1981
    Assignee: RCA Corporation
    Inventor: Paul P. Webb
  • Method for forming buried contact complementary MOS devices
    Patent number: 4276688
    Abstract: A method for fabricating a complementary MOS device, applicable to either silicon-on-sapphire or bulk silicon, is described wherein a buried contact is formed that is comprised of a region of doped silicon, a layer of MoSi.sub.2, a thin layer of Mo and a layer of doped polycrystalline silicon.
    Type: Grant
    Filed: January 21, 1980
    Date of Patent: July 7, 1981
    Assignee: RCA Corporation
    Inventor: Sheng T. Hsu
  • Video disc lubricants
    Patent number: 4275101
    Abstract: Molecular distillation of methyl alkyl siloxanes of the formula ##STR1## wherein R.sub.1 and R.sub.2 are alkyl groups of 4-20 carbon atoms and m and p are integers to produce a distillate having a molecular weight fraction wherein the sum of m and p is about 4, produces an improved lubricant for the video disc, a lubricant that is stable to long term storage and to wide variations in temperature and relative humidity.
    Type: Grant
    Filed: August 9, 1979
    Date of Patent: June 23, 1981
    Assignee: RCA Corporation
    Inventors: Chih C. Wang, Lincoln Ekstrom, Thomas C. Lausman, Henry Wielicki
  • Video disc processing
    Patent number: 4275100
    Abstract: A conductive video disc replica is cleaned by washing with an aqueous solution comprising an oxidizing agent, a base and a surfactant of a fluorocarbon added in an amount so that the solution has a surface energy of about 35 dynes/cm.sup.2 or less. This solution removes metallic and oxygen-containing impurities from the surface of the disc and leaves a fluorinated surface.
    Type: Grant
    Filed: January 4, 1980
    Date of Patent: June 23, 1981
    Assignee: RCA Corporation
    Inventor: Pabitra Datta
  • Method for making a closed gate MOS transistor with self-aligned contacts
    Patent number: 4274193
    Abstract: A method of manufacturing a closed gate MOS transistor having a self-aligned drain contact is presented which insures that the drain contact will have the minimum required geometry. The method employs a self-aligned procedure which insures that the drain contact will have the minimum dimensions to insure a high speed device.
    Type: Grant
    Filed: July 5, 1979
    Date of Patent: June 23, 1981
    Assignee: RCA Corporation
    Inventor: Rodney L. Angle
  • Centering support for a rotatable wafer support susceptor
    Patent number: 4275282
    Abstract: A support mechanism for a rotatable wafer-support susceptor adapted for rotation by a shaft in a vertical orientation. The support mechanism comprises a quartz pedestal tube resting with frictional engagement on a metallic table fixed to the shaft. The pedestal supports, with frictional engagement, the base of the susceptor and is rotated by frictional engagement with the table. Means disposed within an aperture of the base and within the tube constrain the base, and thus the susceptor, and the tube to symmetrical rotation about the shaft passing through a centrally located aperture in the base.
    Type: Grant
    Filed: March 24, 1980
    Date of Patent: June 23, 1981
    Assignee: RCA Corporation
    Inventor: Edward A. Miller
  • Method of laying out an integrated circuit with specific alignment of the collector contact with the emitter region
    Patent number: 4272882
    Abstract: The method entails laying out NPN transistors in a bipolar integrated circuit in a manner which prevents crystal dislocations from making the transistor unreliable. The long edges of the collector contacts are aligned in a direction substantially perpendicular to the direction between the collector contact and the emitter-base junction.
    Type: Grant
    Filed: May 8, 1980
    Date of Patent: June 16, 1981
    Assignee: RCA Corporation
    Inventor: Albert W. Fisher
  • Bulk glass having improved properties
    Patent number: 4273828
    Abstract: Shaped bulk glass is provided which has improved properties and in particular improved compressive strength. The improvement is obtained by plasma depositing a film of amorphous polymeric hydrogenated silicon-silicon nitride on the surface of the bulk glass.
    Type: Grant
    Filed: August 14, 1979
    Date of Patent: June 16, 1981
    Assignee: RCA Corporation
    Inventors: Chester E. Tracy, Werner Kern
  • Method for making a closed gate MOS transistor with self-aligned contacts with dual passivation layer
    Patent number: 4272881
    Abstract: A method of manufacturing a closed gate MOS transistor having a self-aligned drain contact is presented which insures that the drain contact will have the minimum required geometry. The method employs a self-aligned procedure which insures that the drain contact will be the minimum dimensions to insure a high speed device. Also, the completed device includes a dual layer passivation overcoat which insures a hermetically sealed device.
    Type: Grant
    Filed: July 20, 1979
    Date of Patent: June 16, 1981
    Assignee: RCA Corporation
    Inventor: Rodney L. Angle
  • Glazing paste for bonding a metal layer to a ceramic substrate
    Patent number: 4273822
    Abstract: A glazing paste comprising glass frit, a metal oxide powder selected from the group consisting of aluminum oxide (Al.sub.2 O.sub.3), magnesium oxide (MgO), calcium oxide (CaO), and zinc oxide, (ZnO), and an organic vehicle.
    Type: Grant
    Filed: July 18, 1977
    Date of Patent: June 16, 1981
    Assignee: RCA Corporation
    Inventor: Kenneth R. Bube
  • Passivating composite for a semiconductor device comprising a silicon nitride (Si.sub.1 3N.sub.4) layer and phosphosilicate glass (PSG) layer
    Patent number: 4273805
    Abstract: The semiconductor device includes a layer of silicon nitride (Si.sub.3 N.sub.4) beneath a phosphosilicate glass (PSG) layer. A silicon nitride impervious layer prevents the oxidation of underlying, exposed silicon regions during a "flow" step and any "reflow" step. Accordingly, the flow of the PSG layer can be conducted in an atmosphere containing steam, which means that the PSG layer can contain less than about 7% phosphorus by weight. The reduction of the phosphorus content of the PSG layer provides increased reliability for the semiconductor device. The method of manufacturing such a device is also disclosed.
    Type: Grant
    Filed: June 19, 1978
    Date of Patent: June 16, 1981
    Assignee: RCA Corporation
    Inventors: Robert H. Dawson, George L. Schnable
  • Tandem junction amorphous silicon solar cells
    Patent number: 4272641
    Abstract: An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.
    Type: Grant
    Filed: January 4, 1980
    Date of Patent: June 9, 1981
    Assignee: RCA Corporation
    Inventor: Joseph J. Hanak