Abstract: A layer of polycrystalline silicon is coated with a masking layer leaving at least one edge of the silicon layer exposed. A P-type dopant is diffused into the exposed edge of the silicon layer so that the dopant diffuses laterally along the silicon layer a desired distance. The masking layer is then removed and the undoped portion of the silicon layer is removed by an etchant which does not etch the doped portion of the silicon layer. This leaves the narrow strip of the doped silicon which can be used as the gate electrode of an MOS transistor and/or as an interconnection in an integrated circuit. Since the lateral diffusion of the dopant can be accurately controlled, narrow strips of the doped silicon can be achieved.

Abstract: The thermal profile at the top of an EFG die is improved by including heat radiation deflectors within the crucible to change the level of radiation heating experienced by at least some portions of the die.

Abstract: An apertured mask is formed on a major surface of a semiconductor substrate, and a groove is generated in the semiconductor in an area exposed by the aperture. A layer of electrode material is then formed on the groove surface, the layer extending beyond the groove and onto the mask. The mask is then stripped, and those portions of the electrode material extending beyond the groove are removed.

Abstract: This invention pertains to an electron beam resist method for forming a surface relief pattern in a poly(oelfin sulfone) layer wherein the polymer layer is useful for depositing a metal film thereon and thereby forming a corresponding surface relief pattern in the metal film. The surface relief pattern is formed using poly(3-methyl-1-cyclopentene sulfone) as the poly(olefin sulfone) layer and using a mixture of cycloheptanone and 2-methylcyclohexanol or a mixture of 2-methylcyclohexanone and 3-methylcyclohexanol as the developer for the poly(3-methyl-1-cyclopentene sulfone) layer.

Abstract: A Schottky barrier field effect transistor is made by coating the surface of a body of semiconductor material with a metal layer having good ohmic contact with the semiconductor material and defining the metal layer to form spaced source and drain contacts. A relatively thick layer of an insulating material such as silicon oxide or silicon nitride, is coated over the source and drain contacts and the exposed portions of the surface of the semiconductor material between the source and drain contacts. Using a photoresist mask, an opening is etched through the insulating layer to the surface of the semiconductor material over the space between the source and drain contacts with the opening being etched back slightly from the edges of the photoresist mask. Using the photoresist mask as a deposition mask, a metal film is deposited through the opening in the insulating layer onto the exposed surface of the semiconductor material to form the gate.

Abstract: A method for reducing the diameter of the end of an optical fiber while leaving the fiber end flat or slightly concave so that a lens can be formed thereon. The fiber end is etched in a solution of aqueous hydrofluoric acid to which is added ammonium fluoride, ammonium bifluoride or a combination thereof.

Abstract: A slitted tubular member within a reaction chamber encloses a stack of spaced substrates on the surfaces of which are deposited material by chemical vapor-deposition. The tubular member is formed of susceptor material adapted for heating by RF energy or by electrically heated wire. Oscillating means disposed in the slit direct a gas flow into the spacings between the substrates, the stack of which is spaced from the tubular member. Oscillating means disposed in the slit direct a gas flow into the spacings between the substrates, the stack of which is spaced from the tubular member.

Abstract: A semiconductor device includes a region of polycrystalline silicon on a portion of the surface of a body of semiconductor material. A layer of oxidized polycrystalline silicon is also on the semiconductor material body and extends to the polycrystalline silicon region. The surface of the silicon oxide layer is substantially coplanar with the surface of the polycrystalline silicon region so that a metal film conductor can be easily provided over the semiconductor device. The polycrystalline silicon region may be the gate of an MOS transistor or a conductive region of any type of semiconductor device. The semiconductor device is made by forming a polycrystalline silicon layer over the semiconductor material body, forming a mask on a portion of the polycrystalline silicon layer, reducing the thickness of the unmasked portion of the polycrystalline silicon layer and then oxidizing the unmasked portion of the polycrystalline silicon layer to form the oxide layer.

Abstract: A short channel MOS transistor and the method for fabricating same is described wherein the dopant concentrations of the source and drain regions are maintained at different levels of conductivity modifiers. The method described teaches first doping the source region while maintaining the drain region masked and then doping both the source and drain regions.

Abstract: A method for the manufacture of multi-colored microlithographic displays especially fluorescent screens for cathode ray tubes is provided in which a film of a positive phototackifiable polyacetylene sulfone polymer is applied to the substrate of the display. The film is then exposed in predetermined areas with a sufficient amount of radiation to tackify the exposed areas. The exposed areas are then contacted with a pigment or phosphor which is desired to be applied to the exposed area and it selectively adheres to the exposed areas. The exposure and dusting are repeated for each application of different color pigments, toners or phosphors.

Abstract: A method for the manufacture of multi-colored microlithographic displays especially fluorescent screens for cathode ray tubes is provided in which a film of an olefin sulfone polymer is applied to the substrate of the display. The film is then exposed in predetermined areas with a sufficient amount of radiation to depolymerize and lower the melting point of the polymer in the exposed areas. The film is then heated to a temperature above the softening point of the exposed polymer but below the softening point of unexposed polymer and contacted with the pigment or phosphor which is desired to be applied which selectively adheres to the exposed areas. The exposure and dusting are repeated for each application of different color pigments, toners or phosphors.

Abstract: Silicon wafers are cleaned by first immersing them in a film forming solution which reacts with the dirty wafers to form a film on the wafers and then immersing the wafers in a film stripping solution which removes the film. For silicon wafers both the film forming solution and the film stripping solution may be formed from separate aqueous source solutions comprising 49% HF by weight and 70% HNO.sub.3 by weight, respectively. The film forming solution comprises 99.1% to 99.5% by volume the HF solution and 0.5% to 0.9% by volume the HNO.sub.3 solution. A small quantity of a wetting agent may be present in this solution. The stripping solution comprises 95% to 99% by volume of the HNO.sub.3 solution and 5% to 1% by volume of the HF solution. When utilized at room temperature the film forming solution forms a film on the wafers and the stripping solution removes the film with a minimum of attack on the silicon of the main wafer body.

Abstract: Copolymers of an aziridine and sulfur dioxide are disclosed which are useful as positive radiation resists for use in electron beam and x-ray lithography.

Abstract: A monolithic semiconductor-on-insulator device includes silicon islands in spaced relation on the surface of an insulating substrate, with the spaces between the islands occupied by a passivating material which comprises a layer of a semi-insulating material having finite but low conductivity on the surface of the substrate and extending between adjacent islands into contiguous relation with the side surfaces thereof. The surface of the semi-insulating material has a layer of insulating silicon dioxide thereon. The conductivity of the semi-insulating material is such that charge does not accumulate in this material adjacent to the side edges of the islands, but its conductivity is low enough so that leakage currents between devices remain below an amount which would render the circuit which uses the device non-operative.

Abstract: A recording medium is provided which is comprised of a substrate and a film of a polyacetylene sulfone on the surface of the substrate. The recording medium is especially useful in the microlithographic manufacture of electronic circuits using deep ultraviolet exposure.

Abstract: In a method for the glow discharge deposition of an amorphous, continuous layer from an organosilane and oxygen where the deposition is interrupted, wherein a glow discharge in oxygen is employed prior to resumption of glow discharge layer deposition.

Abstract: An aluminum flux method of preparing binary, ternary, and quaternary single crystal metal hexaborides. The single crystals are prepared by mixing a metal oxide, carbonate, or nitrate compound with boron powder in an amount of aluminum which will solubilize the boron at a reaction temperature of from about 1200.degree. C. to about 1600.degree. C. The mixture is held at the reaction temperature for a sufficient time to form the desired single crystal hexaboride.

Abstract: The radiation resistance of an MOS transistor is improved by making the transistor in a manner such that, after the gate insulation layer is formed, all further steps are carried out at a relatively low temperature, i.e., less than about 900.degree. C. The source and drain regions are preferably formed by ion implantation with very little or no post implant thermal activation, and the metallization is applied by low temperature techniques.

Abstract: In an apparatus for plating the cylindrical flat surface of a metal substrate which is seated in a recess in a substrate case, a shield is mounted on the case around the edge of the surface of the substrate. The shield has an opening therethrough of a diameter adjacent the substrate substantially equal to the diameter of the surface of the substrate, and at the top surface thereof smaller than the diameter of the substrate so as to extend over the substrate. The portion of the opening adjacent the substrate is beveled radially inwardly at an angle of between 45 degrees and 60 degrees.

Abstract: X-ray luminescent glasses comprising a divalent cation such as an alkaline earth metal or other divalent cations such as Pb, Cd, or Zn, and certain rare earth metaphosphates are suitable as vitreous, X-ray phosphors or X-ray luminescent glass fibers in an X-ray intensifying screen. The glasses have the compositionn(MO.multidot.P.sub.2 O.sub.5)[(1-y)Tb.sub.2 O.sub.3 .multidot.yCe.sub.2 O.sub.3 .multidot.3P.sub.2 O.sub.5 ]wherein n is greater than zero but less than or equal to 16, M is an alkaline earth metal or other divalent cation such as Pb, Cd, or Zn, and y is greater than or equal to zero but less than one.