Patents Represented by Attorney Birgit E. Morris

Find this attorney in the Justia Lawyer Directory

  • Metallized video disc having an insulating layer thereon
    Patent number: 4206256
    Abstract: Methyl alkyl siloxanes can be employed as the dielectric coating on metallized video disc replicas when the metal surface on the disc has a high surface energy.
    Type: Grant
    Filed: August 21, 1975
    Date of Patent: June 3, 1980
    Assignee: RCA Corporation
    Inventors: Dennis L. Matthies, Robert M. Mehalso, Grzegorz Kaganowicz
  • Laser beam apparatus and method for analyzing solar cells
    Patent number: 4205265
    Abstract: A laser beam apparatus and method for analyzing, inter alia, the current versus voltage curve at the point of illumination on a solar cell and the open circuit voltage of a solar cell. The apparatus incorporates a lock-in amplifier, and a laser beam light chopper which permits the measurement of the AC current of the solar cell at an applied DC voltage at the position on the solar cell where the cell is illuminated and a feedback scheme which permits the direct scanning measurements of the open circuit voltage. The accuracy of the measurement is a function of the intensity and wavelength of the laser light with respect to the intensity and wavelength distribution of sunlight and the percentage the dark current is at the open circuit voltage to the short circuit current of the solar cell.
    Type: Grant
    Filed: August 21, 1978
    Date of Patent: May 27, 1980
    Assignee: RCA Corporation
    Inventor: David L. Staebler
  • Transistor using liquid crystal
    Patent number: 4204217
    Abstract: A transistor comprises two spaced apart electrodes, a body of semiconductor material between and in contact with the two electrodes, a layer of liquid crystal material in contact with and on said semiconductor body, and a third electrode in contact with the layer of liquid crystal material. Integrated optologic devices are made from these liquid crystal transistors.
    Type: Grant
    Filed: July 19, 1978
    Date of Patent: May 20, 1980
    Assignee: RCA Corporation
    Inventor: Lawrence A. Goodman
  • Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon
    Patent number: 4201603
    Abstract: A method for fabricating a short channel MOS device is described wherein the conductivity of the gate member is increased by a factor of about 2.5 by counterdoping a P-type doped polycrystalline line with an N-type dopant.
    Type: Grant
    Filed: December 4, 1978
    Date of Patent: May 6, 1980
    Assignee: RCA Corporation
    Inventors: Joseph H. Scott, Jr., Alfred C. Ipri
  • Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer
    Patent number: 4200473
    Abstract: Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.
    Type: Grant
    Filed: March 12, 1979
    Date of Patent: April 29, 1980
    Assignee: RCA Corporation
    Inventor: David E. Carlson
  • Method of fabricating MNOS transistors having implanted channels
    Patent number: 4197630
    Abstract: The method of forming an MNOS transistor having a stepped channel oxide region utilizes intentional undercutting of the oxide in the channel region to provide a self-aligned mask for ion implanting a region of the same conductivity type, but more heavily doped which will be centrally located beneath the thin portion of the channel region in order to increase the threshold window of the device while saving a photomask operation.
    Type: Grant
    Filed: August 25, 1978
    Date of Patent: April 15, 1980
    Assignee: RCA Corporation
    Inventor: Theodore Kamprath
  • Method of fabricating MNOS transistors having implanted channels
    Patent number: 4196507
    Abstract: The method of forming an MNOS transistor having a stepped channel oxide region utilizes intentional undercutting of the oxide in the channel region to provide a self-aligned mask for ion implanting a region of the same conductivity type, but more heavily doped which will be centrally located beneath the thin portion of the channel region in order to increase the threshold window of the device while saving a photomask operation.
    Type: Grant
    Filed: August 25, 1978
    Date of Patent: April 8, 1980
    Assignee: RCA Corporation
    Inventor: Burchell B. Baptiste
  • Article and device having an amorphous silicon containing a halogen and method of fabrication
    Patent number: 4196438
    Abstract: An amorphous silicon capable of the formation of a semiconductor junction. The amorphous silicon can be fabricated by a glow discharge in a gas atmosphere including hydrogen and a deposition gas. The deposition gas has therein the elements silicon and a halogen selected from the group consisting of chlorine, bromine and iodine.
    Type: Grant
    Filed: September 29, 1976
    Date of Patent: April 1, 1980
    Assignee: RCA Corporation
    Inventor: David E. Carlson
  • Water based photoresist
    Patent number: 4194912
    Abstract: A positive-acting water-based photoresist comprising a polyethylene imine, a dichromate sensitizer and the balance water.
    Type: Grant
    Filed: September 28, 1977
    Date of Patent: March 25, 1980
    Assignee: RCA Corporation
    Inventor: Edmund B. Davidson
  • Novel liquid crystal dyestuffs and electro-optic devices incorporating same
    Patent number: 4184750
    Abstract: Novel liquid crystal dyestuffs of the formula ##STR1## wherein Y and Z are different and can be nitro or cyano and --N(R).sub.2 wherein R is alkyl or alkylene, preferably of 1 to 4 carbon atoms, and X can be hydrogen, methyl, fluoro or chloro, can be added to known liquid crystal compositions to impart color to the mixtures and improve contrast in a liquid crystal electro-optic device containing such mixtures.
    Type: Grant
    Filed: April 24, 1978
    Date of Patent: January 22, 1980
    Assignee: RCA Corporation
    Inventors: Allen Bloom, Ling K. Hung
  • Low cost high efficiency gallium arsenide homojunction solar cell incorporating a layer of indium gallium phosphide
    Patent number: 4179308
    Abstract: A new low cost high efficiency gallium arsenide homojunction solar cell incorporating a passivating surface layer of indium gallium phosphide. The thickness of the indium gallium phosphide layer is selected so that it is transmissive to photons having wavelengths shorter than its bandgap energy.
    Type: Grant
    Filed: June 23, 1978
    Date of Patent: December 18, 1979
    Assignee: RCA Corporation
    Inventors: Gregory H. Olsen, Michael Ettenberg
  • Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes
    Patent number: 4174252
    Abstract: A p-n junction silicon semiconductor device passivated with a first layer of oxygen-doped polycrystalline silicon and a second layer of silicon nitride, is treated to provide contact openings through to the silicon substrate by first depositing an undoped polycrystalline silicon layer over the silicon nitride layer, coating with photoresist, exposing and developing the photoresist to provide an opening to the polycrystalline silicon layer, etching through said latter layer with a particular etchant solution that etches large diameter openings at a faster rate than small diameter openings, and etching through the passivating layers whereby the desired contact opening is etched through to the substrate but pinhole openings less than about 2 microns in diameter in the photoresist layer are not propagated through the passivating layers.
    Type: Grant
    Filed: July 26, 1978
    Date of Patent: November 13, 1979
    Assignee: RCA Corporation
    Inventors: Henry Kressel, Mark A. Spak
  • Printed circuit board with increased arc track resistance
    Patent number: 4174531
    Abstract: This invention pertains to increasing the arc track resistance of printed circuit boards by applying an acrylic resin to the printed circuit board wherein the acrylic resin is a polymer having the recurring unit: ##STR1## wherein x of each unit is independently selected from integers of 0 to 15 and each R.sub.1, R.sub.2, R.sub.3, R.sub.4 and R.sub.5 is independently selected from the group consisting of H, --CH.sub.3 and --C.sub.2 H.sub.5.
    Type: Grant
    Filed: November 14, 1977
    Date of Patent: November 13, 1979
    Assignee: RCA Corporation
    Inventors: Donald C. McCarthy, Martin Rayl
  • Novel solvent drying agent
    Patent number: 4169807
    Abstract: Mixtures of 1-propanol, water and certain perfluoro compounds form excellent drying agents for silicon based devices. The mixtures have good wetting properties and form azeotropic mixtures in the vapor phase.
    Type: Grant
    Filed: March 20, 1978
    Date of Patent: October 2, 1979
    Assignee: RCA Corporation
    Inventor: John R. Zuber
  • PVC molding composition
    Patent number: 4168256
    Abstract: Compounds of the formula ##STR1## wherein n independently at each occurrence and m are integers are excellent lubricants for PVC molding compositions.
    Type: Grant
    Filed: January 13, 1978
    Date of Patent: September 18, 1979
    Assignee: RCA Corporation
    Inventor: Sarwan K. Khanna
  • Method of depositing a silicon oxide layer
    Patent number: 4168330
    Abstract: This invention pertains to a method of depositing a silicon oxide, such as silicon dioxide, layer on a substrate by utilizing a glow discharge in oxygen and a dielectric precursor having the formula ##STR1## wherein x is an integer of 1 to 4 and each R is independently selected from the group consisting of H, --CH.sub.3, and --C.sub.2 H.sub.5.
    Type: Grant
    Filed: October 13, 1977
    Date of Patent: September 18, 1979
    Assignee: RCA Corporation
    Inventor: Grzegorz Kaganowicz
  • Amorphous silicon solar cell allowing infrared transmission
    Patent number: 4166919
    Abstract: An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.
    Type: Grant
    Filed: September 25, 1978
    Date of Patent: September 4, 1979
    Assignee: RCA Corporation
    Inventor: David E. Carlson
  • Cermet layer for amorphous silicon solar cells
    Patent number: 4167015
    Abstract: A transparent high work function metal cermet forms a Schottky barrier in a Schottky barrier amorphous silicon solar cell and adheres well to the P+ layer in a PIN amorphous silicon solar cell.
    Type: Grant
    Filed: April 24, 1978
    Date of Patent: September 4, 1979
    Assignee: RCA Corporation
    Inventor: Joseph J. Hanak
  • Method of removing the effects of electrical shorts and shunts created during the fabrication process of a solar cell
    Patent number: 4166918
    Abstract: A method of removing the effects of electrical shorts and shunts created during the fabrication process and improving the performance of a solar cell with a thick film cermet electrode opposite to the incident surface by applying a reverse bias voltage of sufficient magnitude to burn out the electrical shorts and shunts but less than the break down voltage of the solar cell.
    Type: Grant
    Filed: July 19, 1978
    Date of Patent: September 4, 1979
    Assignee: RCA Corporation
    Inventors: Gerald E. Nostrand, Joseph J. Hanak
  • Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
    Patent number: 4163677
    Abstract: A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.
    Type: Grant
    Filed: April 28, 1978
    Date of Patent: August 7, 1979
    Assignee: RCA Corporation
    Inventors: David E. Carlson, Christopher R. Wronski