Patents Represented by Attorney Birgit E. Morris

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  • Short channel MOS devices and the method of manufacturing same
    Patent number: 4225875
    Abstract: A short channel MOS transistor and the method for fabricating same is described wherein the dopant concentrations of the source and drain regions are maintained at different levels of conductivity modifiers. The method described teaches first doping the source region while maintaining the drain region masked and then doping both the source and drain regions.
    Type: Grant
    Filed: April 19, 1978
    Date of Patent: September 30, 1980
    Assignee: RCA Corporation
    Inventor: Alfred C. Ipri
  • Semiconductor device having integrated diode
    Patent number: 4225874
    Abstract: A semiconductor transistor device comprises a base region having a relatively thin portion with a thicker portion peripherally surrounding the relatively thin portion. A PN junction is between the base region and a collector region and includes at least one radius of curvature having the lowest breakdown voltage of the PN junction. An emitter region is in the thicker portion of the base region and an emitter electrode overlies the relatively thin portion.
    Type: Grant
    Filed: March 9, 1978
    Date of Patent: September 30, 1980
    Assignee: RCA Corporation
    Inventor: Ramon U. Martinelli
  • Etchant solution containing HF-HnO.sub.3 -H.sub.2 SO.sub.4 -H.sub.2 O.sub.2
    Patent number: 4220706
    Abstract: An etchant solution for multilayered metal layers comprising an aqueous solution of from 0.5 to 50 percent by weight of nitric acid, from 0.03 to 1.0 percent by weight of hydrofluoric acid, from 0.05 to 0.5 percent by weight of hydrogen peroxide and from 0.1 to 1.0 percent by weight of sulphuric acid. The solution is compatible with photolithographic techniques and uniformly etches three or more metals.
    Type: Grant
    Filed: May 10, 1978
    Date of Patent: September 2, 1980
    Assignee: RCA Corporation
    Inventor: Mark A. Spak
  • Fabrication of an integrated injection logic device incorporating an MOS/bipolar current injector
    Patent number: 4217688
    Abstract: A novel semiconductor configuration is presented utilizing a narrow, gate-like (base) structure formed of, for example, a floating polycrystalline silicon line, that is capable of modulating both the number and type of carriers (electrons or holes) flowing thereunder, between a pair of similarly doped, separated regions. One particular structure described is a four terminal I.sup.2 L configuration where the inverter transistor can function in either the mode of an MOS device or the mode of a bipolar device.
    Type: Grant
    Filed: December 14, 1978
    Date of Patent: August 19, 1980
    Assignee: RCA Corporation
    Inventor: Alfred C. Ipri
  • Guide wing for a furnace paddle
    Patent number: 4218214
    Abstract: A furnace paddle adapted to hold semiconductor wafers therein and having means attached thereto for supporting the paddle for movement along the inside of a cylindrically-shaped tube of a semiconductor processing furnace has means attached to the paddle adjacent the supporting means for limiting the lateral movement of the supporting means up the inside wall of the tube. The means includes a guide wing having two ends for contacting respectively the inside wall of the tube at intersecting points of a chord thereof and having a stem attached to the paddle adjacent the supporting means for maintaining the ends proximate the inside wall of the tube.
    Type: Grant
    Filed: February 5, 1979
    Date of Patent: August 19, 1980
    Assignee: RCA Corporation
    Inventor: Howard T. Nelson
  • Ablatable medium for optical recording
    Patent number: 4218689
    Abstract: An ablative recording medium comprises a substrate coated with a light reflecting layer which in turn is coated with a light absorptive layer of 6,6'-diethoxythioindigo. During recording, portions of the light absorptive layer are ablated by a modulated focussed light beam, thereby exposing portions of the reflecting layer. Video information is recorded as a reflective-antireflective pattern.
    Type: Grant
    Filed: January 30, 1978
    Date of Patent: August 19, 1980
    Assignee: RCA Corporation
    Inventors: Allen Bloom, Robert A. Bartolini
  • Compensated amorphous silicon solar cell
    Patent number: 4217148
    Abstract: An amorphous silicon solar cell incorporates a region of intrinsic hydrogenated amorphous silicon fabricated by a glow discharge wherein said intrinsic region is compensated by P-type dopants in an amount sufficient to reduce the space charge density of said region under illumination to about zero.
    Type: Grant
    Filed: June 18, 1979
    Date of Patent: August 12, 1980
    Assignee: RCA Corporation
    Inventor: David E. Carlson
  • Method of inducing differential etch rates in glow discharge produced amorphous silicon
    Patent number: 4217393
    Abstract: A method of inducing differential etch rates in glow discharge produced amorphous silicon by heating a portion of the glow discharge produced amorphous silicon to a temperature of about 365.degree. C. higher than the deposition temperature prior to etching. The etch rate of the exposed amorphous silicon is less than the unheated amorphous silicon.
    Type: Grant
    Filed: July 24, 1978
    Date of Patent: August 12, 1980
    Assignee: RCA Corporation
    Inventors: David L. Staebler, Peter J. Zanzucchi
  • Video disc lubricants
    Patent number: 4216970
    Abstract: Siloxanes of the formula ##STR1## wherein R.sub.3 and R.sub.3 ' independently at each occurrence are long chain alkyl groups and m is an integer of 0 or 1, can be employed as lubricants for video discs. The lubricants are stable to long term storage and to wide variations in temperature and humidity.
    Type: Grant
    Filed: March 5, 1979
    Date of Patent: August 12, 1980
    Assignee: RCA Corporation
    Inventors: Chih C. Wang, Lincoln Ekstrom, Henry Wielicki
  • Liquid junction schottky barrier solar cell
    Patent number: 4215185
    Abstract: A mixture of ceric ions (Ce.sup.+4) and cerous ions (Ce.sup.+3) in an aqueous electrolyte solution forms a Schottky barrier at the interface between an active region of silicon and the electrolyte solution. The barrier height obtained for hydrogenated amorphous silicon using the Ce.sup.+4 /Ce.sup.+3 redox couple is about 1.7 eV.
    Type: Grant
    Filed: March 26, 1979
    Date of Patent: July 29, 1980
    Assignee: RCA Corporation
    Inventor: Richard Williams
  • Water soluble adhesive coating for mounting components to printed wiring boards
    Patent number: 4215025
    Abstract: Components can be held down on printed circuit boards by applying compositions comprising a water soluble polymeric compound or mixture of compounds which can be dissolved in water to give a greater than 45% solids content with a viscosity range of about 8 to about 12 poises at about 25.degree. C., a water soluble mono- or polyhydric alcohol, water, a wetting agent, and a water soluble organic acid having a keto oxygen group within 4 carbon atoms of the carboxylic acid group, to the printed circuit board prior to insertion of the components to keep them in place during soldering operations. The mixture can be completely removed after soldering by a water rinse.
    Type: Grant
    Filed: December 27, 1977
    Date of Patent: July 29, 1980
    Assignee: RCA Corporation
    Inventors: Marvin Packer, Otis D. Black
  • Apparatus for the deposition of a material from a liquid phase
    Patent number: 4214550
    Abstract: An apparatus for depositing one or more layers of a material on a substrate by liquid phase epitaxy includes in a furnace tube a furnace boat having a plurality of wells in its upper surface and a substrate-carrying slide movable through the boat and across the wells to bring the substrate into the wells. Over and along the top surface of the boat is an elongated, hollow support rod which is rotatable about its longitudinal axis. A plurality of cup-shaped containers are mounted on or secured to the support end. The containers are positioned along the support rod 30 that each container is over a separate well in the furnace boat. A thermocouple is within and movable along the support rod.
    Type: Grant
    Filed: May 21, 1979
    Date of Patent: July 29, 1980
    Assignee: RCA Corporation
    Inventor: Frank Z. Hawrylo
  • Gate turn-off triac with dual low conductivity regions contacting central gate region
    Patent number: 4214255
    Abstract: A semiconductor triac comprises means for switching the device from a conducting state to a blocking state. The means can be characterized as being a gate region which is substantially aligned with each of two anode regions. Each of the anode regions is adjacent a different one of two major opposing surfaces and are substantially misaligned with respect to each other.
    Type: Grant
    Filed: November 7, 1977
    Date of Patent: July 22, 1980
    Assignee: RCA Corporation
    Inventor: John M. S. Neilson
  • Tellurium schottky barrier contact for amorphous silicon solar cells
    Patent number: 4213798
    Abstract: A Schottky barrier amorphous silicon solar cell incorporates a tellurium layer as the Schottky barrier.
    Type: Grant
    Filed: April 27, 1979
    Date of Patent: July 22, 1980
    Assignee: RCA Corporation
    Inventors: Richard Williams, Yehuda Arie
  • Method for making adherent pinhole free aluminum films on pyroelectric and/or piezoelectric substrates
    Patent number: 4214018
    Abstract: A method of forming an adherent pinhole free aluminum film on a pyroelectric and/or piezoelectric substrate comprising heating said substrate to from about 150.degree. C. to about 350.degree. C. at a pressure of from about 1.times.10.sup.-4 Torr to about 1.times.10.sup.-6 Torr for a sufficient time to desorb any gas molecules on the surface on said substrate, cooling said substrate with dry oxygen to about 125.degree. C. at a pressure of about 1.times.10.sup.-4 Torr and thereafter, terminating the flow of oxygen and further reducing the pressure to about 1.times.10.sup.-5 Torr or lower and evaporating an aluminum film on said substrate.
    Type: Grant
    Filed: August 14, 1978
    Date of Patent: July 22, 1980
    Assignee: RCA Corporation
    Inventors: Bernard Halon, Dorothy M. Hoffman
  • Sealing composition
    Patent number: 4214067
    Abstract: A cured epoxy resin composition containing high concentrations of liquid polysulfide polymers has improved resistance to thermal cycling and degradation by moisture.
    Type: Grant
    Filed: December 14, 1977
    Date of Patent: July 22, 1980
    Assignee: RCA Corporation
    Inventor: Marvin Packer
  • Aqueous photoresist of casein and N-methylol acrylamide
    Patent number: 4211563
    Abstract: The addition of N-methylol acrylamide as an accelerator to casein-based aqueous photoresist compositions reduces the baking temperature required to render the developed resist etch resistant.
    Type: Grant
    Filed: March 23, 1979
    Date of Patent: July 8, 1980
    Assignee: RCA Corporation
    Inventor: Abraham Goldman
  • Photomask alignment system
    Patent number: 4211489
    Abstract: An automatic photomask alignment system includes a monochromatic light source, such as a laser, a series of diffraction patterns which are located on a semiconductor substrate and keys which are located on photomasks with which the substrate is to be aligned. A light beam is directed through the key on a photomask onto the diffraction pattern to provide a pattern of light spots whose intensities at various locations are determined by the relative alignment of the mask and the diffraction grating. A feedback arrangement which employs photocells and means for moving the photomasks relative to the substrate provides the alignment of the photomasks with the substrate.
    Type: Grant
    Filed: January 16, 1978
    Date of Patent: July 8, 1980
    Assignee: RCA Corporation
    Inventors: Hans P. Kleinknecht, Wolfram A. Bosenberg
  • Mercury vapor leaching from microelectronic substrates
    Patent number: 4207138
    Abstract: A method for leaching mercury soluble metals from mercury insoluble substrates such as microelectronic devices without damaging the substrate or contaminating the environment with mercury. A mercury vapor jet is formed by passing mercury vapors through an orifice at residual gas pressure of about 10.sup.-2 Torr and a temperature of from about 65.degree. C. to about 150.degree. C. The mercury vapor jet strikes the substrate at an angle which is substantially perpendicular to the center of the substrate and leaches the mercury soluble metal therefrom.
    Type: Grant
    Filed: January 17, 1979
    Date of Patent: June 10, 1980
    Assignee: RCA Corporation
    Inventor: Thomas T. Hitch
  • Novel ortho-quinone diazide photoresist sensitizers
    Patent number: 4207107
    Abstract: Ortho-quinone diazide compounds of the formula ##STR1## wherein R is an organic radical are useful sensitizers for photoresist compositions and intermediates for novel dyes.
    Type: Grant
    Filed: August 23, 1978
    Date of Patent: June 10, 1980
    Assignee: RCA Corporation
    Inventor: Daniel L. Ross