Abstract: A system for interconnecting a set of device chips by means of an array of microjoints disposed on an interconnect carrier is taught. The carrier is provided with a dense array of microjoint receptacles with an adhesion layer, barrier layer and a noble metal layer; the device wafers are fabricated with an array of microjoining pads including an adhesion layer, barrier layer and a fusible solder layer with pads being located at matching locations in reference to the barrier receptacles; the device chips are joined to the carrier through the microjoint arrays resulting in interconnections capable of very high input/output density and inter-chip wiring density.

Abstract: An arrangement and method for enhancing the cooling capacity of portable personal computers. More particularly, disclosed is the provision of an arrangement for increasing the cooling capacity of laptop computers which are constrained in size, weight and power consumption, through which transfers and dissipates heat from semiconductor chips located in the computer and which are to be cooled, to the rear side of a liquid-crystal display of the laptop computer.

Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula: where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

Abstract: Deaggregated substituted and unsubstituted polyparaphenylenes, polyparaphenylevevinyles, polyanilines, polyazines, polythiophenes, poly-p-phenylene sulfides, polyfuranes, polypyrroles, polyselenophene, polyacetylenes formed from soluble precursors and combinations thereof and copolymers thereof and methods of fabrication are described. The deaggregated polymer molecules when subsequently doped show higher electrical conductivity. Agents such as lithium chloride, m-cresol and nonylphenol are used to deaggregate the polymer molecules. The deaggregating agents can be added prior to or during doping the molecules.

Abstract: The present invention comprises a method for forming a hardmask including the steps of depositing a polymeric preceramic precursor film atop a substrate; converting the polymeric preceramic precursor film into at least one ceramic layer, where the ceramic layer has a composition of SivNwCxOyHz where 0.1≦v≦0.9, 0≦w≦0.5, 0.05≦x≦0.9, 0≦y≦0.5, 0.05≦z≦0.8 for v+w+x+y+z=1; forming a patterned photoresist atop the ceramic layer; patterning the ceramic layer to expose regions of the underlying substrate, where a remaining region of the underlying substrate is protected by the patterned ceramic layer; and etching the exposed region of the underlying substrate. Another aspect of the present invention is a buried etch stop layer having a composition of SivNwCxOyHz where 0.05<v<0.8, 0<w<0.9, 0.05<x<0.8, 0<y<0.8, 0.05<z<0.8 for v+w+x+y+z=1.

Abstract: A fan module including: two or more individual fans, each fan having an air movement means and a motor engaged with the air movement means for accelerating air entering each of the two or more individual fans; a temperature sensor for sensing a temperature associated with the two or more fans and for outputting a first signal corresponding to the temperature; rotational speed sensor for outputting a second signal corresponding to a rotational speed of each of the two or more fans; and a processor for receiving the first and second signals and controlling the two or more individual fans based on the first and second signals.

Abstract: To provide connecting means between an antenna structure, which is in a PC main body, and a PC card that does not have an extruding section. There are included a housing 8, an antenna structure, a slot 10 of the housing into which a PC card is inserted, a high frequency cable 5 one end of which is connected to the antenna structure electrically and part of which is pulled outside the housing, a connector plug 6 that is connected to the other end of the high frequency cable 5 electrically and is outside the housing, and an elastic body such as rubber 13 which is configured so that the high frequency cable is pulled inside the housing.

Abstract: A system and method for annotating resource results obtained in a customer self service system that performs resource search and selection. The method comprising the steps of: receiving a resource response set of results obtained in response to a current user query and receiving a user context vector associated with the current user query, the user context vector comprising data associating an interaction state with the user; applying an ordering and annotation function for mapping the user context vector with the resource response set to generate an annotated response set having one or more annotations; and, controlling the presentation of the resource response set to the user according to the annotations, wherein the ordering and annotation function is executed interactively at the time of each user query.

Abstract: A structure useful for electrical interconnection comprises a substrate; a plurality of porous dielectric layers disposed on the substrate; an etch stop layer disposed between a first of the dielectric layers and a second of the dielectric layers; and at least one thin, tough, non-porous dielectric layer disposed between at least one of the porous dielectric layers and the etch stop layer. A method for forming the structure comprising forming a multilayer stack of porous dielectric layers on the substrate, the stack including the plurality of porous dielectric layers, and forming a plurality of patterned metal conductors within the multilayer stack. Curing of the multilayer dielectric stack may be in a single cure step in a furnace. The application and hot plate baking of the individual layers of the multi layer dielectric stack may be accomplished in a single spin-coat tool, without being removed, to fully cure the stack until all dielectric layers have been deposited.

Abstract: A semiconductor device containing a diffusion barrier layer is provided. The semiconductor device includes at least a semiconductor substrate containing conductive metal elements; and, a diffusion barrier layer applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer having an upper surface and a lower surface and a central portion, and being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is more concentrated near the lower and upper surfaces of the diffusion barrier layer as compared to the central portion of the diffusion barrier layer. Methods for making the semiconductor devices are also provided.

Abstract: A process of making a high precision microcontact printing stamp in which an elastomeric monomer or oligomer is introduced into a mold wherein a photoresist master imprinted with a microcircuit design in negative relief is predisposed. The monomer or oligomer is cured at a temperature no higher than about ambient temperature whereby a distortion-free microcontact printing stamp having the microcircuit design of the photoresist master in positive relief is formed.

Abstract: A porous, low-k dielectric film that has good mechanical properties as well as a method of fabricating the film and the use of the film as a dielectric layer between metal wiring features are provided. The porous, low-k dielectric film includes a first phase of monodispersed pores having a diameter of from about 1 to about 10 nm that are substantially uniformly spaced apart and are essentially located on sites of a three-dimensional periodic lattice; and a second phase which is solid surrounding the first phase. Specifically, the second phase of the film includes (i) an ordered element that is composed of nanoparticles having a diameter of from about 1 to about 10 nm that are substantially uniformly spaced apart and are essentially arranged on sites of a three-dimensional periodic lattice, and (ii) a disordered element comprised of a dielectric material having a dielectric constant of about 2.8 or less.

Abstract: A cooling device having a common cooling distribution unit with multiple compliant cooling elements. Mechanisms are built in to ensure the cooling elements are in good thermal contact with heat generating semiconductor chips of different heights and sizes on a common carrier. The cooling distribution unit has protection structures to prevent the leakage of coolant from the unit. Further reduction of the risk of accidental coolant leakage is provided with the onboard storage of coolant absorbent materials in the coolant distribution unit. The cooling elements have serpentine coolant channels to enhanced the cooling capacity. The compliance of the cooling elements can also be achieved by using concentric tubing to connect the coolant distribution unit to cooling heads on the cooling elements.

Abstract: A graphical user interface for a customer self service system that performs resource search and selection.

Abstract: Reworkable thermally conductive adhesive composition including a cured reaction product from a diepoxide wherein the epoxy groups are connected through an acyclic acetal moiety, a cyclic anhydride and a thermally conductive filler are provided and used to bond semiconductive devices to a chip carrier or heat spreader.

Abstract: In a Field Effect Transistor (FET) with a semiconductor channel the use of a high Tc oxide superconductor material in the gate electrode provides both control of parasitic resistance and capacitance and a proper work function when operated at a temperature below the Tc. The 1-2-3 compound oxide superconductors with the general formula Y1Ba2Cu3O7-y where y is approximately 0.1 have the ability in use in FET's to provide convenient work functions, low resistance and capacitance, and to withstand temperatures encountered in processing as the FET is being manufactured.

Abstract: A method of forming an electrical interconnection between a first electrical device and a second electrical device comprises the steps of providing contacts in an uncompressed state. The uncompressed contacts are then deformed to a compressed state and then the contacts are positioned in a device adapted to hold the contacts between the first and second electrical devices. Or alternatively, the uncompressed contacts are positioned in the device and then compressed to the compressed state. The contacts are then activated to substantially expand to the uncompressed state wherein each contact expands to substantially its uncompressed state for establishing the electrical interconnection between the first and second electrical devices.

Abstract: A cooling mechanism having a heat sink, a first conduction device, and a convection device is provided. The first conduction device conducts heat from a heat source to the heat sink. The convection device has a first side, a second side, a peripheral dimension. The heat sink is disposed about the peripheral dimension of the convection device. The convection device draws in air through the first and second sides and forces the air radially outward across the heat sink. A cooling mechanism is also provided wherein the cooling mechanism has a ratio of heat removal in watts to volume in cubic centimeters from about 1:1 to about 3:11 at a sound level of between about 20 and 40 decibels.

Abstract: Deaggregated substituted and unsubstitued polyparaphenylenes, polyparaphenylevevinyles, polyanilines, polyazines, polythiophenes, poly-p-phenylene sulfides, polyfuranes, polypyrroles, polyselenophene, polyacetylenes formed from soluble precursors and combinations thereof and copolymers thereof and methods of fabrication are described. The deaggregated polymer molecules when subsequently doped show higher electrical conductivity. Agents such as lithium chloride, m-cresol and nonylphenol are used to deaggregate the polymer molecules. The deaggregating agents can be added prior to or during doping the molecules.

Abstract: Electrically conductive and abrasion resistant polymeric compositions, methods of fabrication thereof and uses thereof are described. Admixtures of abrasion resistant materials and electrically conductive polymeric materials are formed. Many of these admixtures arc light transmitting and can be used as an abrasion resistant light transmitting electrostatic discharge layers. The light transmitting discharge layer is useful as a surface coating for visual displays such as CRT screens to avoid electrostatic accumulation of dust and scratching.