Abstract: A method is provided for electroforming metal integrated circuit structures. The method comprises: forming an opening such as a via or line through an interlevel insulator, exposing a substrate surface; forming a base layer overlying the interlevel insulator and substrate surface; forming a strike layer overlying the base layer; forming a top layer overlying the strike layer; selectively etching to remove the top layer overlying the substrate surface, exposing a strike layer surface; and, electroforming a metal structure overlying the strike layer surface. The electroformed metal structure is deposited using an electroplating or electroless deposition process. Typically, the metal is Cu, Au, Ir, Ru, Rh, Pd, Os, Pt, or Ag. The base, strike, and top layers can be deposited using physical vapor deposition (PVD), evaporation, reactive sputtering, or metal organic chemical vapor deposition (MOCVD).

Abstract: A system and method are provided for updating a speculative global history prediction record in a microprocessor system using pipelined instruction processing. The method accepts microprocessor instructions with consecutive operations, including a conditional branch operation with an associated first branch address. A speculative global history record (SGHR) of conditional branch resolutions and predictions is accessed and hashed with the first branch address, creating a first hash result. The first hash result is used to index a branch history table (BHT) of previous first branch resolutions. As a result, a first branch prediction is made, and the SGHR is updated with the first branch prediction. A non-speculative global history record (NSGHR) of branch resolutions is updated with the resolution of the first branch operation, and if the first branch prediction is incorrect, the SGHR is corrected using the NSGHR.

Abstract: An electronic signal level detection system and method are provided. The method receives an analog input signal having a variable voltage and compares the input signal voltage to a threshold. A detection signal is generated for input signal voltages exceeding the threshold in a periodic first time frame. In a second periodic time frame (following the first time frame), a count is updated in response to the generated detection signals. The count is used to create a metric representative of the difference between the input signal voltage and the threshold. The count is incremented in response to the generating a detection signal (“1”) in the first time frame, and decremented in response to not generating a detection signal (“0”) in the first time frame.

Abstract: A multi-layer PrxCa1-xMnO3 (PCMO) thin film capacitor and associated deposition method are provided for forming a bipolar switching thin film. The method comprises: forming a bottom electrode; depositing a nanocrystalline PCMO layer; depositing a polycrystalline PCMO layer; forming a multi-layer PCMO film with bipolar switching properties; and, forming top electrode overlying the PCMO film. If the polycrystalline layers are deposited overlying the nanocrystalline layers, a high resistance can be written with narrow pulse width, negative voltage pulses. The PCMO film can be reset to a low resistance using a narrow pulse width, positive amplitude pulse. Likewise, if the nanocrystalline layers are deposited overlying the polycrystalline layers, a high resistance can be written with narrow pulse width, positive voltage pulses, and reset to a low resistance using a narrow pulse width, negative amplitude pulse.

Abstract: A system and method are provided for processing a semiconductor film using a digital light valve. The method enables pixel elements from an array of selectable pixel elements; gates a light in response to enabling the pixel elements; exposes selected areas of a semiconductor film, such as Si, to the gated light; and, creates light-related reactions in the semiconductor film, in response to the light exposure. More specifically, enabling pixel elements from an array of selectable pixel elements may include: exposing a digital light valve array of selectable pixel elements to the light; enabling a pattern of pixel elements; and, transmitting light from the pattern of enabled pixel elements. Examples of light-related reactions include changing the topology of a film surface, creating a chemical reaction, diffusing a dopant, activating a dopant, alloying the semiconductor film, and changing the semiconductor crystalline structure.

Abstract: A wide dynamic range charge pump is provided for use in a phase-locked loop (PLL) circuit. The charge pump includes a first, second, and third set of current sources. The charge pump further includes a first capacitor having an input connected to the first set. A first operational amplifier (op amp) has an input connected to the first set output, and an output connected to the second set output and to a voltage controlled oscillator (VCO) input. A first resistor has a first end connected to the first op amp output and a second end connected to the third set. A second capacitor has an input connected to the first resistor second end, and an output connected to the second reference voltage.

Abstract: A system and method are provided for crystallizing a semiconductor film using a digital light valve. The method comprises: enabling pixel elements from an array of selectable pixel elements; in response to enabling the pixel elements, gating a light; sequentially exposing adjacent areas of a semiconductor film, such as Si, to the gated light; annealing the light-exposed areas of semiconductor film; and, in response to the annealing, laterally growing crystal grains in the semiconductor film. For example, the method may sequentially expose adjacent areas of semiconductor film to gated light in a first direction; and, simultaneously exposing adjacent areas of semiconductor film to gated light in a second direction, different than the first direction. For example, the second direction may be perpendicular to the first direction. As a result, crystal grains can be laterally grown simultaneously in the first and second directions.

Abstract: A method of fabricating a grayscale mask includes preparing a quartz wafer; depositing a layer of Si3N4 on the quartz wafer; depositing a layer of titanium/TEOS directly on the Si3N4 layer on the backside of the quartz wafer; removing the layer of Si3N4 from the front side of the quartz wafer; depositing a layer of SRO directly on the front side of the quartz wafer; patterning a microlens array on the SRO layer; etching the SRO layer to form a microlens array in the SRO layer; depositing a layer of titanium; patterning and etching the titanium layer; depositing a layer of SiOxNy on the SRO microlens array; CMP to planarize the layer of SiOxNy removing the titanium/TEOS layer from the backside of the quartz wafer; bonding the planarized SiOxNy to a quartz reticle plate; and etching to remove Si3N4 from the bonded structure to form a grayscale mask reticle.

Abstract: A method of fabricating a grayscale reticle includes preparing a quartz wafer substrate; depositing a layer of SRO on the top surface of the quartz substrate; patterning and etching the SRO to form an initial microlens pattern using step-over lithography; patterning and etching the SRO to form a recessed pattern in the SRO; depositing an opaque film on the SRO; patterning and etching the opaque film; depositing and planarizing a planarizing layer; cutting the quartz wafer into rectangular pieces sized to be smaller than a selected blank reticle; bonding the a piece a to selected reticle blank to form a grayscale reticle; and using the grayscale reticle to form a microlens array on a photoimager.

Abstract: A floating body germanium (Ge) phototransistor and associated fabrication process are presented. The method includes: providing a silicon (Si) substrate; selectively forming an insulator layer overlying the Si substrate; forming an epitaxial Ge layer overlying the insulator layer using a liquid phase epitaxy (LPE) process; forming a channel region in the Ge layer; forming a gate dielectric, gate electrode, and gate spacers overlying the channel region; and, forming source/drain regions in the Ge layer. The LPE process involves encapsulating the Ge with materials having a melting temperature greater than a first temperature, and melting the Ge using a temperature lower than the first temperature. The LPE process includes: forming a dielectric layer overlying deposited Ge; melting the Ge; and, in response to cooling the Ge, laterally propagating an epitaxial growth front into the Ge from an underlying Si substrate surface.

Abstract: A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate, including a silicon (Si) active layer and buried oxide (BOX) layer overlying a Si substrate; forming a circuit in the Si active layer; forming a blocking mask over selected circuit areas; implanting H in the Si substrate; annealing; removing the blocking mask; in response to the H implanting, forming a cleaving plane in the Si substrate; bonding the circuit the top oxide layer to the carrier substrate; and, cleaving the Si substrate. More specifically, the cleaving plane is formed along a horizontal peak concentration (Rp) H layer in the Si substrate and along the buried oxide layer interface.

Abstract: A thermal electric (TE) binary NOR gate logic circuit is provided with a method for NOR logic gating. The method accepts a first input voltage representing an input binary logic state and generates a first thermal electric (TE) temperature in response to the first input voltage. A second input voltage is accepted representing an input binary logic state, and a second TE temperature is generated in response to the second input voltage. In response to the first and second TE temperatures, a NOR logic state output voltage is generated. More explicitly, a first control voltage is generated in response to the first TE temperature, and a second control voltage is generated in response to the second TE temperature. Then, a third TE temperature is generated in response to the first and second control voltages, which in turn generates the output voltage.

Abstract: A four-transistor Schmitt trigger inverter is provided. The Schmitt trigger inverter is made from an n-channel MOS (NMOS) dual-gate thin-film transistor (DG-TFT) and a p-channel MOS (PMOS) DG-TFT, both DG-TFTs having a top gate, a back gate, and source/drain regions. A (conventional) NMOS TFT has a gate connected to an NMOS DG-TFT first S/D region and a PMOS DG-TFT first S/D region. The NMOS TFT also has a first S/D region connected to the NMOS DG-TFT back gate and the PMOS DG-TFT back gate. A (conventional) PMOS TFT has a gate connected to the NMOS TFT gate, and a first S/D region connected to the NMOS TFT first S/D region.

Abstract: An array of fully isolated multi-junction complimentary metal-oxide-semiconductor (CMOS) filterless color imager cells is provided, with a corresponding fabrication process. The color imager cell array is formed from a bulk silicon (Si) substrate without an overlying epitaxial Si layer. A plurality of color imager cells are formed in the bulk Si substrate, where each color imager cell includes a photodiode set and a U-shaped well liner. The photodiode set includes first, second, and third photodiode formed as a stacked multi-junction structure, while the U-shaped well liner fully isolates the photodiode set from adjacent photodiode sets in the array. The U-shaped well liner includes a physically interfacing doped well liner bottom and first wall. The well liner bottom is interposed between the substrate and the photodiode set, and the first wall physically interfaces each doped layer of each photodiode in the photodiode set.

Abstract: A germanium (Ge) short wavelength infrared (SWIR) imager and associated fabrication process are provided. The imager comprises a silicon (Si) substrate with doped wells. An array of pin diodes is formed in a relaxed Ge-containing film overlying the Si substrate, each pin diode having a flip-chip interface. There is a Ge/Si interface, and a doped Ge-containing buffer interposed between the Ge-containing film and the Ge/Si interface. An array of Si CMOS readout circuits is bonded to the flip-chip interfaces. Each readout circuit has a zero volt diode bias interface.

Abstract: Systems and methods are provided for receiving and encoding 3D video. The receiving method comprises: accepting a bitstream with a current video frame encoded with two interlaced fields, in a MPEG2, MPEG4, or H.264 standard; decoding a current frame top field; decoding a current frame bottom field; and, presenting the decoded top and bottom fields as a 3D frame image. In some aspects, the method presents the decoded top and bottom fields as a stereo-view image. In other aspects, the method accepts 2D selection commands in response to a trigger such as receiving a supplemental enhancement information (SEI) message, an analysis of display capabilities, manual selection, or receiver system configuration. Then, only one of the current frame interlaced fields is decoded, and a 2D frame image is presented.

Abstract: A system and method are provided for maximum likelihood estimation in a channel receiving data with inter-symbol interference (ISI). The method receives a serial stream of digital information bits. Decisions are made concerning the received information bit values, which the method accepts as processed information, with soft decisions (SDs) and corresponding initial hard decisions (HDs). The method then identifies a sequence of processed information in a correction matrix, and uses the correction matrix to cross-reference the sequence to a HD look-up value. In response to accessing the HD look-up value, a modified HD is created. The modified HD is decoded, for example, by using forward error correction (FEC), creating a decoded HD. The method compares the decoded HD to the initial HD, and updates the correction matrix HD look-up value in response to the comparison.

Abstract: A system and method are provided for generating client-side virtual radio stations. The method comprises: receiving server-supplied radio stations at an network-connected radio service client; establishing radio filter characteristics; analyzing the server-supplied radio stations using the filter characteristics; generating a client-side virtual radio station service; supplying the virtual radio station service from a virtual radio station; and, presenting the virtual radio station services on a client-side user interface. The radio filter characteristics may be established using automatic, semi-automatic, or manual selection mechanisms. For example, characteristics may be selected automatically, as learned from an analysis of a user's past and present behavior. The radio filter characteristics may include criteria such as musical genre, song title, artist information, or server source, to name just a few.

Abstract: A nanotip capacitor and associated fabrication method are provided. The method provides a bottom electrode and grows electrically conductive nanotips overlying the bottom electrode. An electrically insulating dielectric is deposited overlying the nanotips, and an electrically conductive top electrode is deposited overlying dielectric-covered nanotips. Typically, the dielectric is deposited by forming a thin layer of dielectric overlying the nanotips using an atomic layer deposition (ALD) process. In one aspect, the electrically insulating dielectric covering the nanotips forms a three-dimensional interface of dielectric-covered nanotips. Then, the electrically conductive top electrode overlying the dielectric-covered nanotips forms a three-dimensional top electrode interface, matching the first three-dimensional interface of the dielectric-covered nanotips.

Abstract: A system and method are provided for controlling information flow from a channel service module (CSM) in an asymmetric channel environment. The method provides information for transmission to an OSI model PHY (physical) layer device with a channel buffer. The PHY device channel buffer current capacity is estimated. Information is sent to the channel buffer responsive to estimating the channel buffer capacity, prior to receiving a Polling Result message from the PHY device. Initially, Polling Request messages are sent to the PHY device, and Polling Result messages received from the PHY device, as is conventional. In response to analyzing the Polling messages, a transmission pattern is determined, which includes the amount of information to transmit and a period between transmissions.