Abstract: A semiconductor packaging subassembly is described in which a plurality of modules or chips, repsonsive to a plurality of common input signals, are provided with input signal redriver circuits. Each redriver circuit is responsive to an input and provides an output signal to each the of chips in the subassembly. The preferred embodiment is directed to a multi-module memory arrangement in which input signals including CAS, RAS, W and address signals are received and redriven.

Abstract: A semiconductor memory device is described in which wordline redundancy is implemented without impacting the access time. A redundant decoder circuit generates a wordline drive inhibit signal which inhibits the generation of a normal wordline signal. Deselection also deselects the normally accessed reference cells, requiring that the redundant cells provide their own reference signal. This last requirement is accomplished by utilization of twin cells for the redundant memory. Placing the redundant memory cells on the sense node side of the bit line isolators enables the effective doubling of the number of redundant cells available to each of a plurality of sub-arrays of normal memory.

Abstract: A semiconductor memory device is described in which wordline redundancy is implemented without impacting the access time. A redundant decoder circuit generates a wordline drive inhibit signal which inhibits the generation of a normal wordline signal. Deselection also deselects the normally accessed reference cells, requiring that the redundant cells provide their own reference signal. This last requirement is accomplished by utilization of twin cells for the redundant memory. Placing the redundant memory cells on the sense node side of the bit line isolators enables the effective doubling of the number of redundant cells available each of a plurality of sub-arrays of normal memory.

Abstract: This invention relates to semiconductor memories and includes a sense amplifier architecture in which sensed data bit or column lines are electrically isolated and shielded from their immediately adjacent active neighbors by utilization of non-selected bit lines as an AC ground bus. In its simplest embodiment, shielded bit line (SBL) architecture includes two pairs of opposed bit lines associated with a common sense amplifier. One of each of the bit line pairs is multiplexed into the sense amplifier and the other unselected bit line pair is clamped to AC ground to shield the selected bit line pair from all dynamic line-to-line coupling.

Abstract: A method for reducing the susceptibility of integrated circuit dynamic memory devices to environmentally produced radiation, such as alpha particles, in which a buried layer, having a majority carrier concentration substantially equal to or greater than the concentration of free carriers generated by the radiation and being between one and four orders of magnitude greater concentration than that of the semiconductor substrate, is ion implanted within a few microns of the substrate surface after at least one major high temperature processing step in the manufacturing process has been completed.

Abstract: A programmable PLA circuit in which an interlaced AND/OR array is provided which has both common input and common output lines. Separate AND and OR functions are generated during two different timing intervals such that both of the logical arrays can physically share input and output circuit elements. A binary adder is described in which pairs of array output lines are applied to the same Exclusive-NOR circuits during the two time intervals to provide the Exclusive-NOR of product terms during the AND array time interval and to provide the Exclusive-NOR of sum of product terms or the sum of the Exclusive-NOR of product terms during the second time interval.

Abstract: A level sensitive switching circuit particularly useful as a data detecting sense amplifier for a Read-Only Memory integrated circuit. The switching circuit includes a pair of IGFET inverter circuits coupled between a drain supply voltage and a common voltage node. The signal to be sensed is applied to the input of the first inverter, the output of which is the circuit output. Two feedback loops are established between the output of the first inverter and the source electrode of an IGFET input device in the first inverter. The first feedback loop includes a source follower responsive to the output of the first inverter and the second feedback loop includes the second inverter having its output coupled to the gate of one of two series-connected devices between the common voltage node and the source supply voltage. The other series-connected device is responsive to an amplifier set clock pulse to selectively enable the circuit.

Abstract: A signal generating circuit for an integrated circuit device responsive to first and second externally applied input signals occurring at a predetermined time interval in which the performance of a first input signal responsive circuit is made to vary inversely with respect to the performance of other internal signal generating circuits such that internally generated signals will occur at a predetermined time with respect to the external input signals regardless of the influence of variable parameters. Power dissipation of the first input signal responsive circuit also varies inversely with respect to that of other circuits present on the integrated circuit device so that total power dissipation is minimized.

Abstract: A method for providing high density multiple level metallurgy for integrated circuit devices in which a relatively thin layer of plasma produced silicon nitride is deposited over a first level of interconnection metallurgy formed on a layer of silicon oxide. Overlap via holes are etched in the nitride layer followed by deposition of a thicker layer of polyimide forming polymer. A second set of via holes larger than the first are provided in the polymer layer and a second layer of interconnection metallurgy is then deposited by a lift-off deposition technique.

Abstract: A method of providing self-passivating interconnection electrodes for semiconductor devices which provides low resistivity composite polysiliconsilicide electrodes. In the method the formation of oxidation induced voids in polysilicon underlying the silicide is eliminated by deposition of polysilicon and stoichiometric proportions of silicon and a silicide-forming metal. These steps are followed by deposition of a silicon layer having a thickness determined to provide between 30 and 100 percent of the silicon required to form a silicon dioxide passivation layer. Subsequent thermal oxidation of the layered electrode structure provides a self-passivated structure useful for fabrication of silicon gate MOSFET devices as well as other integrated circuit structures.

Abstract: An electron beam exposure system for forming integrated circuit patterns in which pattern data provided by either a control processor or a mass storage device is transferred through a pattern buffer interface which contains a large buffer memory, the reading and writing of which is automatically controlled by read and write logic contained within the interface. Data is transferred to the interface over busses having a data width less than the data width capable of being stored at an addressable location in the buffer memory. Automatic assembly of larger units of data is controlled by logic within the interface which requires only initialization by the control processor. Automatic address sequencing for subsequent data transfers is carried out under control of self-incrementing storage address registers and self-decrementing word count registers.

Abstract: A method of providing less than one micron p-n junction regions for IGFET devices in which a high concentration of arsenic is implanted so that its peak lies near the surface of a semiconductor substrate. Phosphorus is also implanted with an energy to provide a maximum concentration below that of the arsenic and of a magnitude at least one order of magnitude less than that of arsenic. An oxidation/anneal step thermally diffuses the implanted ions to form a junction less than one micron in thickness.

Abstract: High density VMOSFET devices, particularly single transistor memory cells, are provided by use of a series of simplified self-aligning process steps. Gate electrodes, source/drain regions and source/drain contacts are provided with the aid of an initial mask-less photoresist removal process in which a relatively thick layer of self-leveling photoresist is uniformly removed in order to define portions of a gate electrode within the recess of a V-groove. The gate electrode subsequently acts as a self-aligned mask to define implanted source/drain regions also within the V-groove and to enable second level interconnecting metallurgy contacts to be formed along the sidewalls of the V-groove.

Abstract: A known FET driver circuit which is to be controlled at the gate by means of relatively low TTL signals, is improved in such a manner that the source potential of the input transistors is shifted oppositely to the input signal. This leads to an increase in the effective potential difference in the signal level applied to the input transistors and thus to an improved switching speed.

Abstract: A method for forming shallow low leakage ion implanted source/drain regions in an integrated circuit environment including semirecessed oxide isolation regions in which high parasitic device threshold voltages are provided by an oxidizing/annealing post implant process. Arsenic ions are implanted into a recessed oxide isolated substrate followed by a wet oxidation process and a non-oxidizing annealing process for a period of time to provide a passivating dielectric over low leakage source/drain regions of less than one micron junction depth and to provide adequate high temperature annealing to reduce the charge effects in the oxide isolation regions caused by the implanted arsenic ions.

Abstract: A method for providing self-aligned conductors in vertically integrated semiconductor devices which includes providing recesses in the surface of a semiconductor substrate for the fabrication of V-groove devices, providing a conductive layer over the surface and then applying a layer of masking material over the conductive layer to form a planar upper surface, selectively etching the masking material until it remains only in the recesses and then selectively etching the exposed portion of the conductive layer.

Abstract: A field effect transistor driver circuit responsive to a single input pusle generates a highly loadable output clock pulse with short rise and fall times, the rising edge being shifted relative to said input pulse by a controllable delay time but the trailing edge remaining practically undelayed. This advantageous pulse form is achieved through an improved controlling of a bootstrap output stage. Two preceding stages, i.e., a transmission gate and a delay stage supply two out-of-phase control pulses with high amplitudes and steep edges. Of essential importance is the novel delay stage which is designed as push-pull stage with a load FET and a driver FET. The gate of the load FET is controlled by the output pulse of the bootstrap stage 2 fed back via a third FET and by a capacitively coupled-in input pulse at the drain, whereas the gate of driver FET is controlled from the bootstrapped output of the transmission gate. The connecting point of load and driver FET represents the output of the delay stage.

Abstract: To the known sense latch already existing in a bit line pair in an FET memory, and to the two bit switches in each bit line another latch is arranged in series which furthermore is coupled to the common data input and output via a write driver on the one side and a read driver on the other. Both latches are of an identical structure and controlled by the same pulses in the read as well as in the write phase. The data path via the write driver and the read driver up to, or from, the additional latch is respectively designed as unidirectional double rail line, and selectively connectable via the bit switches with the bidirectional double rail line to the respective bit line pair.

Abstract: A charge-coupled device shift register is formed in V-grooves provided by anisotropically etching in a substrate. insulated conductive electrodes are provided perpendicular to the V-grooves to form a plurality of parallel shift registers which transfer charges along the length of the V-grooves.

Abstract: A method for reducing parasitic capacitance in semiconductor devices, particularly for the removal of raised portions of conductive layers overlying and capable of being capacitively coupled to other conductors in semiconductor memory integrated circuits. The method provides for the application of a masking or photoresist layer over the surface of a substrate containing portions of a conductor to be removed such that the masking layer completely covers the conductor. Next a uniform thickness of the masking layer is removed to expose only the raised portions of the conductor which are subsequently selectively etched through the remainder of the masking layer. Application of the method to a manufacturing process for a dynamic MOSFET memory array is also described in which bit sense line capacitance is substantially reduced.