Abstract: An ASIC book comprising a gate-array format of ESD components is provided. A customized, optimized and tuned ESD network can be constructed from the ASIC book. Novel ESD circuitry having inter-rail ESD circuitry and single-rail ESD circuitry can be constructed. The inter-rail ESD circuitry is scaleable and comprises one or more diode strings for interconnecting a pair of power rails. The ESD trigger voltage for a diode string is set by the number of diodes within the customized diode string and preferably a sufficient number of diodes are provided within each diode string for power-up and power-down sequence independence. The single-rail ESD circuitry is connected to a level-shifter and may comprise an RC discriminator comprising a customizable plurality of NFET transistors connected in series. The RC discriminator may be connected to a clamping transistor via a buffering circuit, such as an inverter stage, that isolates the gate capacitance of the clamping transistor from the RC discriminator.

Abstract: A photoresist having both positive and negative tone components resulting in a lower “k” factor than the single tone photoresist is disclosed. The hybrid resist may either have the negative tone resist or the positive tone resist as the major portion, while the other tone is a relatively minor portion. For examples, a positive tone resist may include a minor portion of a negative tone cross-linker or a negative tone resist may include positively acting functional groups. The hybrid resist of the present invention allows for wider exposure dosage windows, therefore increasing the yield or performance and line is density.

Abstract: The preferred embodiment of the present invention overcomes the limitations of the prior art by providing a method to form unlinked features using hybrid resist. The method uses a trim process in order to trim the linking features from the “loops” formed by the hybrid resist. This allows the method to form a plurality of unlinked features rather than the loops. In order to trim the ends, a relatively larger trim area is formed adjacent the narrow feature line, either by a second exposure step or by utilizing a grey scale reticle. The broader or wider open area allows features to be formed in the narrow feature lines and being trimmed from the relatively large areas, thereby resulting in district features rather than loops.

Abstract: Offset alignment marks and a method of forming offset alignment marks within a kerf region of a semiconductor wafer in the manufacture of semiconductor devices includes the steps of forming a first track of a kerf and forming a second track of the kerf. The first track includes at least one alignment mark region having a first alignment mark disposed therein for use in an alignment of a first field of a first semiconductor chip active area. The second track includes at least one alignment mark region having a second alignment mark disposed therein for use in an alignment of a second field of a second semiconductor chip active area. The alignment mark regions of the first track and the second track are complementary and interlocking alignment mark regions extending across a centerline of the kerf and arranged in an offset manner with respect to one another along the kerf.

Abstract: The preferred embodiment of the present invention overcomes the limitations of the prior art by providing a method to form unlinked features using hybrid resist. The method uses a trim process in order to trim the linking features from the “loops” formed by the hybrid resist. This allows the method to form a plurality of unlinked features rather than the loops. In order to trim the ends, a relatively larger trim area is formed adjacent the narrow feature line, either by a second exposure step or by utilizing a grey scale reticle. The broader or wider open area allows features to be formed in the narrow feature lines and being trimmed from the relatively large areas, thereby resulting in district features rather than loops.

Abstract: Method of improving the resistance of a metal against degradation from exposure to fluorine released from a fluorine-containing material by forming a fluorine-barrier layer between the insulator material and the metal. The invention is especially useful in improving corrosion and poisoning resistance of metallurgy, such as aluminum metallurgy, in semiconductor structures. The invention also covers integrated circuit structures made by this method.

Abstract: A shared path phase detector and phase indicator circuit provide a phase locked loop circuit for which loading and wiring dependencies are greatly reduced. The phase detector circuit is provided for receiving a reference clock and a second clock. The phase detector circuit provides a separate and unique signal for indicating the magnitude of the difference between the phase of the reference clock and the second clock, regardless of whether the second clock is leading or lagging the first clock. The phase indicator circuit detects whether the second clock is leading or lagging the first clock, and routes the pulses on a first internal signal path to generate either increment or decrement pulses depending on whether the second clock is lagging or leading, respectively.

Abstract: A photoresist having both positive and negative tone components resulting in a lower “k” factor than the single tone photoresist is disclosed. The hybrid resist may either have the negative tone resist or the positive tone resist as the major portion, while the other tone is a relatively minor portion. For examples, a positive tone resist may include a minor portion of a negative tone cross-linker or a negative tone resist may include positively acting functional groups. The hybrid resist of the present invention allows for wider exposure dosage windows, therefore increasing the yield or performance and line density.

Abstract: A method for forming square shape images in a lithographic process is disclosed wherein a first plurality of lines running in a first direction is defined in a first, usually sacrificial, layer, and then a second resist is defined wherein the lines run in an intersecting pattern to those of the first layer, thereby creating cornered images wherever the first and second layer intersect and in the open areas between the lines. Methods are proposed for developing the square intersecting areas and the square angle areas defined by the openings. Additionally, a photomask is disclosed in which the length and width of the cornered images are independently patterned using the two-exposure process.

Abstract: Various alignment targets are disclosed having improved visibility. A first embodiment includes an alignment target having a first reflective layer of a first material such as tungsten having a roughened surface; and a second layer of a second material, such as aluminum, deposited on the first layer. The surface of the second layer is roughened by conforming with the roughened surface of the first layer to provide both layers with a uniform optical layers. The edges of the second layer provides an optical signal to contrast between the two layers for alignment. A second embodiment includes an alignment target with a plurality of parallel elongated trenches; a first material fills each of the trenches; and a patterned layer of a second material is deposited on top the elongated trenches and the insulator layer.

Abstract: A self biased differential amplifier has a switching point accurately set according to a reference voltage. DC hysteresis is provided, by a circuit internal to the differential amplifier. The amplifier has an input circuit having first and second series connected transistors, wherein the beta ratio of these first and second transistors is changed by enabling an additional transistor of a hysteresis circuit according to an output state of the differential amplifier. When the output state is "high", the switching point is decreased in order that temporary small drops (due to noise or glitches) in the input signal are ignored. Conversely, when the output state is "low", the switching point is increased in order that temporary small increases in the input signal are ignored.

Abstract: A shared path phase detector circuit for receiving a reference clock and an oscillator clock, the phase detector circuit providing an output signal for indicating a magnitude difference between a phase of the reference and oscillator clocks. The output signal is independently derived from the leading or lagging edge relationship of the reference and oscillator clocks. The output signal does not describe which signal leads, but only the width magnitude difference. The design provides a single path over which the output signal travels, without feedback, such that the circuit dependencies are greatly reduced.

Abstract: Offset alignment marks and a method of forming offset alignment marks within a kerf region of a semiconductor wafer in the manufacture of semiconductor devices includes the steps of forming a first track of a kerf and forming a second track of the kerf. The first track includes at least one alignment mark region having a first alignment mark disposed therein for use in an alignment of a first field of a first semiconductor chip active area. The second track includes at least one alignment mark region having a second alignment mark disposed therein for use in an alignment of a second field of a second semiconductor chip active area. The alignment mark regions of the first track and the second track are complementary and interlocking alignment mark regions extending across a centerline of the kerf and arranged in an offset manner with respect to one another along the kerf.

Abstract: An invention is disclosed which implements bit line redundancy in a memory module, such as a dynamic random access memory (DRAM), in accordance with a block write operation. The block write operation is commonly used in dual port RAMs, sometimes referred to as video random access memories (VRAM). Specifically, a block write operation allows a plurality of bits of data to be written to a plurality of adjacent bit lines defined by a column address. The precise combination of adjacent bit lines selected by the column address is designated by an address mask. The invention provides a memory module with a redundant bit decoder that incorporates an address masking function into the redundant bit decoder during block write operations and also bypasses a masking function during normal read and write operations. This redundant bit decoder allows a single redundant bit line to replace any single defective bit line of the selected group of block write bit lines.

Abstract: The present invention is directed to an apparatus and method for reliability testing of an integrated circuit. The present invention provides a test structure and method for testing gate and node dielectrics of an integrated circuit wherein a self-heating gate structure is integrated with the product structure itself. Selected conductive lines within the product structure are used as heater elements to provide temperature stressing of the integrated circuit. The localized self-heating gate structure is an integral part of the product chip. Thus, etch and deposition characteristics of the test structure are kept identical to the etch and deposition characteristics of the product itself. As low-voltage technologies make it harder to obtain significant acceleration due to voltage stressing, temperature stressing may be used instead to increase acceleration.

Abstract: A highly functional built in self test circuit for embedded compiled macros is useful for testing embedded compiled macros having differing parameters. The built in self test circuit receives a scan vector that describes the parameters of the embedded compiled macro that is to be tested. For, example, the number and width of words stored in a read only memory (ROM) are scanned into the built in self test circuit for controlling the test sequences. A state machine within the built in self test circuit cycles through test vector generation, test vector application, data output scanning and compression for signature analysis. Parallel outputs of the embedded compiled devices are serialized so that regardless of the number of outputs, a serial input shift register can be used for signature generation.

Abstract: A schematic modifier editor that works in concert with a shapes modifier editor so that changes to a design layout are reflected in the schematic. The shapes modifier editor tracks the changes made to the cell hierarchy and saves the changes to a list file. The schematic modifier editor processes the list file and edits the schematic file so that its cell hierarchy corresponds with that of the modified shapes file. The modified schematic file and modified shapes file can then be compared by a conventional verification program to ensure that the modified shapes file implements the desired circuit.

Abstract: An integrated cache architecture that has low power consumption, high noise immunity, and full support of an integrated validity/least recently used (LRU) cache write mode. The cache stores TAG, index and LRU information directly on a master word line, and cache line data on local word lines. The access information is made available early in the cycle, allowing the cache to disable local word lines that are not needed. The master word lines and local word lines having approximately the same cycle time. By laying out the master and local word lines in a metal layer that substantially renders the stored data immune to overlaying noise sources, high frequency interconnections can be made over the cache without disturbing the stored data. The architecture circuitry efficiently updates the stored LRU information, such that a combined data validity/full LRU cache update protocol is supported.

Abstract: Disclosed is a process for depositing a conformal polymer coating on selected areas of a silicon substrate. The substrate is first exposed through a mask to a gaseous plasma so as to form a film of desired pattern, the plasma comprising a compound having strong electron donating characteristics. Then, the patterned film and the remaining substrate not covered by the film are exposed to the vapor of a monomer, which condenses and polymerizes on the exposed substrate surfaces, but not on the film. The film serves to inhibit substantial deposition of the coating, so as to provide a selective deposition, where the coating is formed only on those areas of the substrate where desired.

Abstract: A sputtering deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures. The resulting film thickness at the bottom of the aperture is at least 2.times. what can be achieved using conventional sputtering methods. The amount of material deposited at the bottom of the apertures can be further enhanced by elevating the temperature of the substrate (e.g. 450.degree. C.) during the deposition process.