Abstract: According to an embodiment of the present invention, an electrostatic breakdown protection method protects a semiconductor device from a surge current impressed between a first terminal and a second terminal, the semiconductor device including: a diode impressing a forward-bias current from the first terminal to the second terminal; and a bipolar transistor impressing a current in a direction from the second terminal to the first terminal under an ON state, a continuity between a collector terminal and an emitter terminal of the bipolar transistor being attained before a potential difference between the first terminal and the second terminal reaches such a level that the diode is broken down.

Abstract: The present invention provides a manufacturing method for an impeller with which molding and high-quality finishing can be performed extremely easily and quickly through resin molding using a die, and an impeller manufactured by the impeller manufacturing method. A metallic bush is disposed in a die, whereupon a resin material is injected through a gate in the die. A connecting portion between an unnecessary resin portion formed from residual resin material in the gate and a resin impeller main body molded around the bush is formed to be thin, and the unnecessary resin portion is removed from the impeller main body using pushing or withdrawing means.

Abstract: A tilt inspection apparatus which detects tilt of an object to be observed with respect to a placement surface on which the object is placed, including: a light source which irradiates light or projects an image onto the object to be observed; a light shield plate which has a first slit extended in a first direction and a second slit extended in a second direction normal to the first direction, and is disposed between the light source and the object to be observed; and a carriage mechanism which supports the light shield plate so as to be rotatable in the in-plane direction of the light shield plate, and fixes the light shield plate while aligning the first slit normal to the placement surface is provided.

Abstract: A semiconductor manufacturing method includes a determination of, when the heater is controlled using a first output control pattern, an output amount by differential operation, and an output amount by a proportional operation such that a temperature detected by the first thermometer becomes a target temperature from a temperature at a ramp-up start time, patterning a part of an operation amount of the heater by using a first heat amount to determine a second output control pattern, the second heat amount being determined based on a temperature detected by the second thermometer and being defined at a period from the ramp-up start time to a time of maximum temperature, the operation amount of the heater being defined at the period, and a processing of the substrate while controlling the heater by using the second output control pattern.

Abstract: A circuit verifying method is provided for a logic circuit of a first sequential circuit which outputs a first data based on an input data in synchronization with a first clock signal, and a second sequential circuit which outputs a second data based on the first data in synchronization with a second clock signal with a period longer than that of a first clock signal. The circuit verifying method includes detecting a change of the input data in synchronization with the first clock signal; outputting a data indicating a meta stable state during a period longer than one period of the first clock signal based on the change of the input data as the first data; storing the changed input data in a storage unit based on the change of the input data; and outputting the changed input data which has been stored in the storage unit as the first data after stop the output of the data indicating the meta stable state.

Abstract: A delay control circuit in which steady phase error can be eliminated has a first variable delay circuit and a first phase control circuit. The delay control circuit further includes a second variable delay circuit disposed in either a first or second clock path, and a second phase control circuit arranged so as to form an additional feedback loop, which is for canceling steady phase error produced by the first phase control circuit, with respect to the first clock path or second clock path using a delay value applied to the second variable delay circuit.

Abstract: A semiconductor device (and method for making the same) includes a strained-silicon channel formed adjacent a source and a drain, a first gate formed over a first side of the channel, a second gate formed over a second side of the channel, a first gate dielectric formed between the first gate and the strained-silicon channel, and a second gate dielectric formed between the second gate and the strained-silicon channel. The strained-silicon channel is non-planar.

Abstract: A system and method for identifying gapped permutation patterns, includes discovering all clusters in the input data sequence that occur with a predetermined gap.

Abstract: A voltage controlled oscillator circuit comprises a variable current generator to supply an operation current to a voltage controlled oscillator, the voltage controlled oscillator to include a resonance circuit having a variable capacitor and inductor, and to output an output signal having an amplitude based on a current generated by the variable current generator, and a first optimization circuit to which the output signal is inputted, the first optimization circuit generating and outputting a current setting signal based on an amplitude change of the output signal corresponding to a change of a current outputted by the variable current generator to the variable current generator.

Abstract: Disclosed is a semiconductor memory device in which a cell is connected to word lines of at least first and second ports, and control of timing of activation of the word lines of the first and second ports is performed based upon first and second clock signals, respectively, comprising first and second test control signals in correspondence with the first and second clock signals that control the respective timings of activation of the word lines of the first and second ports. With regard to the cell with the first and second ports being selected, when the first test control signal is in an activated state and the second test control signal is in a deactivated state, control is exercised so as to mask the second clock signal and, responsive to the first clock signal, activate the first and second word lines simultaneously.

Abstract: A semiconductor memory device for storing data defining a multidimensional space based on coordinate information of the data, includes: a cell array having memory cells arranged in a lattice pattern, for storing the data; a word line selector selecting and driving any one of a plurality of word lines which activate memory cells arranged in a row direction; write amplifiers/sense amplifiers writing/reading data to/from the memory cells arranged in a column direction; an amplifier selector inputting/outputting the data to/from the selected one of the write amplifiers/sense amplifiers; and an address conversion circuit generating a row address to be supplied to the word line selector based on the coordinate information of the data, and to generate a column address to be supplied to the amplifier selector by converting the coordinate information of the data into one-dimensional information.

Abstract: A MEMs-based system (and method), includes a sensor array including at least two sensors providing a basis for ensemble averaging.

Abstract: A waveform generating circuit includes a constant current circuit that supplies a constant current through a power source; a current mirror circuit that flows an output current that is n times an input current; and a switching circuit that switches a flowing direction of the current in the constant current circuit between the current mirror circuit and the output terminal according to the logical level of the rectangle input signal. The waveform generating circuit generates a triangle wave having a falling slope waveform that is n times the rising slope. On the other hand, the waveform generating circuit that receives an inverted signal of the signal generates a triangle wave and its voltage is compared with another in the comparator to generate an output signal.

Abstract: An exemplary aspect of an embodiment of the present invention is a voltage-current converter converting an input voltage input to an input terminal to a current to output the current, the voltage-current converter including a first current generating circuit including an input transistor having a gate connected to the input terminal and generating an output current according to a current flowing in the input transistor, and a second current generating circuit including a transistor having a gate having a potential different from potential of a source and a drain, the second current generating circuit generating a superimposed current according to the current flowing in the transistor to supply the superimposed current to the input transistor.

Abstract: A node that configures a spanning tree over a network to which a plurality of nodes are connected generates a tree after a cost change using another LAN while continuing to operate the tree that existed before the change, and switches the tree that is used for forwarding after the new tree has been stable.

Abstract: An alignment mark is arranged to be within an image screen and the alignment mark is formed with rectangular patterns having varied dimensions from each other. The signal waveforms from each of the rectangular patterns are measured. The number of the rectangular patterns with normal waveforms is compared to the minimum required number of marks prescribed beforehand. The amount of deviation in alignment is calculated by excluding the abnormal measured result.

Abstract: Disconnection of communication is prevented and a connecting relation is maintained between radio devices even when a communication channel is dynamically switched. Accordingly, when a first radio device switches a communication channel used for radio communication with a second radio device, the first radio device firstly switches to a simultaneously-connectable channel capable of a simultaneous communication with an original channel, and then switches to a destination channel.

Abstract: A frequency synthesizer includes first and second frequency dividers for receiving and frequency-dividing a signal generated by a voltage-controlled oscillator, a frequency mixer for mixing output signals of the first and second frequency dividers, and a third frequency divider for receiving and frequency-dividing a signal having one frequency of two frequencies that are output by the frequency mixer. The first, second third and frequency dividers and the frequency mixer are provided in a feedback loop within a PLL circuit between the voltage-controlled oscillator and the phase comparator. The phase comparator has a first input terminal to which a signal to which a signal that is output by the third frequency divider is input and a second input terminal to which a reference clock signal that is output by a reference signal generator is input. A loop filter supplies the voltage-controlled oscillator with a voltage that is based upon result of the phase comparison by a phase comparator.

Abstract: A nonvolatile semiconductor memory comprises: a semiconductor substrate; a first gate electrode formed on a surface of the semiconductor substrate through a first gate insulating film; a second gate electrode formed on the surface of the semiconductor substrate through a second gate insulating film and being adjacent to the first gate electrode through an insulating film; a charge trapping film formed at least in a trap region surrounded by the semiconductor substrate, the first gate electrode and the second gate electrode; and a tunnel insulating film formed between the charge trapping film and the second gate electrode. In one of programming and erasing, electrons are injected into the charge trapping film from the second gate electrode through the tunnel insulating film by Fowler-Nordheim tunneling.

Abstract: A differential amplifier circuit includes an offset adjuster circuit for varying the active load to adjust the offset caused by the differential pair. The differential amplifier circuit includes fine adjustment cell sections including a plurality of transistors having the substantially same size, and shift cell sections including transistors, whose transistor size is larger than the transistors of the fine adjustment cell sections.