Abstract: In a memory circuit, the word line decoder includes a memorization logic circuit that provides for the memorizing of the selection of the word lines. This memorization provides for the simultaneous erasure of all the words lines for which the selection has been memorized.

Abstract: A power supply in which control of the switch-on instant of a power device of a boost-circuit (operating in a discontinuous mode) is implemented by monitoring the current which actually flows through the "fly-back" inductance. The current is monitored on a sensing resistance, and, by the use of a comparator, a signal is produced for enabling/disabling the transfer to an input of a PWM driving circuit of a switch-on signal produced by a null detector. This configuration provide good noise immunity, which is particularly useful in power-factor-correction applications, and reduced power dissipation.

Abstract: In an integrated circuit, a diode is interposed between the semiconductor substrate and the contact pad to an external bias voltage, and the substrate is biased at an internal voltage reference. Between each contact pad of the integrated circuit and semiconductor substrate, there is positioned a protection device against permanent overloads and a protection device against electrostatic discharges. By isolating the semiconductor substrate from the external voltages source and by placing a protection device between each contact pad and the substrate, a broad, general protection of the integrated circuit is obtained against all the destructive phenomena such as overloads, positive and negative overvoltages, polarity reversal and electrostatic discharges.

Abstract: A windshield wiper system in which a dedicated microcontroller controls not only the wiper motor, but also a solenoid which provides dynamically variable downforce on the wiper blade.

Abstract: A method for eliminating the bird's beak from selective oxidations of semiconductor electronic devices having a semiconductor substrate (1) which is covered by a pad oxide layer (2) covered, in turn, by a first layer (3) of nitride, and wherein at least one vertical-walled pit (11) is defined for growing an isolation region, comprises the sequential steps of: selectively etching the oxide layer (2) within the pit (11) to define peripheral recesses (6,8) between the substrate (1) and the nitride; filling the recesses (6,8) with nitride; and growing oxide in the pit (11) so as to form the isolation region contrasting the nitride portions (9,10) which occlude the recesses (6,8).

Abstract: Memories in integrated circuit form can have several amplifiers per data contact. To increase the possibilities of redundancy with a given number of redundancy columns without, causing too much space near the memory zone to be occupied by complicated multiplexers, the address AP used to select a single amplifier for each contact is used also to select one group of memories among several groups (as many groups as there are amplifiers per contact) in a defective address storage register. Only the defective addresses of this group are applied to a comparator used to detect whether a defective column address is received by the memory. A correlation is thus set up between the place where the defective column is located and the place where the redundancy column, which will be used to replace it, is located. This correlation results from the simultaneous selection by AP of a group of amplifiers and of a group of defective column addresses connected to these amplifiers.

Abstract: A bipolar power transistor and a low voltage bipolar transistor are combined in an emitter switching or a semibridge configuration in an integrated structure. In a version with non-isolated components, the components of the structure are totally or partially superimposed on each other, partly in a first epitaxial layer and partly in a second epitaxial layer, and the low voltage bipolar transistor is situated above the emitter region of the bipolar power transistor which is thus a completely buried active structure. In a version with isolated components, there are two P+ regions in an N- epitaxial layer. The first P+ region constitutes the power transistor base and encloses the N+ emitter region of the power transistor. The second P+ region encloses two N+ regions and one P+ region, constituting the collector, emitter, and base regions respectively of the low voltage transistor.

Abstract: A current generator which includes a first bipolar transistor, the base of which is connected to a reference voltage and the emitter to ground through a first resistor. A first current mirror is connected to mirror the emitter current of this first transistor. The mirrored current is augmented by the base current of a second transistor (matched to the first transistor), and by current Vbe/R passed by a second resistor (matched to the first transistor), which is connected between the base and emitter of the second transistor. The current thus augmented drives a second current mirror. The output of the second mirror provides a precise reference current, determined by the reference voltage and the resistor magnitude.

Abstract: A brushless DC motor in which increased rotor resistance is used to facilitate very frequent reversals. The rotor endcap is thinned down to the point where the resistance seen by the path of the current loop through one of said endcaps, is at least one-half as much as the resistance seen by the portion of said current loop which flows along the length of one of said rotor bars.

Abstract: A transconductor stage for high-frequency filters operated on a low voltage supply, being of a type which comprises an input circuit portion having signal inputs, further comprises a pair of interconnected differential cells (2,3) being associated each with a corresponding signal input. Each cell incorporates at least one pair of bipolar transistors (Q1,Q2;Q3,Q4) having at least one corresponding terminal thereof (e.g. the emitter terminal) connected in common.

Abstract: A method is provided for forming a field programmable device of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A first conductive layer is formed. A first, fusible, dielectric layer is formed over the first conductive layer. The dielectric layer is patterned and etched to form a plurality of dielectric regions exposing portions of the first conductive layer. A second dielectric layer is then formed over the dielectric regions and the exposed portions of the first conductive layer. A plurality of contact openings through the second dielectric layer are formed to expose portions of the first conductive layer and portions of the dielectric regions. A second conductive layer is then formed over the second dielectric layer and in the contact openings.

Abstract: The amplifier includes a pair of bipolar input transistors (Q1, Q2), each having a base adapted to receive a differential input signal, a collector and an emitter which is biased by a first fixed current source (M7, M8) of its own and a degeneration resistor (R) which connects the emitters of the two bipolar transistors. The collector of each bipolar transistor is also biased by a second fixed current source (M5, M6) with a smaller current than that of the first source, and the collectors of the two bipolar transistors are furthermore connected to the input terminals of respective MOS amplifier devices (M1, M2, M3, M4, R.sub.L). The amplifier can be made in BCD, BiCMOS or purely CMOS technology, in which case the bipolar transistors are obtained as lateral bipolar transistors.

Abstract: The PSRR (power supply rejection ratio) of a current mirror circuit is increased by cascoding the output transistor of the current mirror, and the precision of the circuit is enhanced by employing a frequency compensated gain stage utilizing a field effect transistor to drive a bipolar current output transistor.

Abstract: A stage of both input and output configurable for operation with low and high voltages, comprises:first (M1), second (M2) and third (M3) transistors, each having first and second terminals and a control terminal, the first and second terminals and control terminal of the first transistor (M1) being respectively connected to a first terminal of a voltage supply, the first terminal of the second transistor (M2), and a drive circuit means, the second terminal and control terminal of the second transistor (M2) being respectively connected to a circuit node (A), forming an input/output terminal of the stage (1), and to the drive circuit means, the first and second terminals and control terminal of the third transistor (M3) being respectively connected to a second terminal of the voltage supply, the circuit node (A), and the drive circuit means;at least one diode (D2) connected between the first and the second terminal of the second transistor (M2); andan input circuit (3) having a first input terminal connected to

Abstract: Microelectronic semiconductor integrated circuit devices integrated on a common substrate with molecular electronic devices, having barrier-well-barrier structure with the well being conductive oligomer.

Abstract: A manufacturing process for an integrated circuit which includes at least one vertical-current-flow MOS transistor. The patterned photoresist which screens the body implant is also used to mask the etching of a nitride layer over a pad oxide. After the photoresist is cleared, the nitride pattern is transferred into the oxide, and the resulting oxide/nitride stack is used to mask the source implant. The nitride/oxide stack is then removed, the gate oxide is grown, and the gate layer is then deposited.

Abstract: A circuit for protecting nonvolatile memories against loss of Vcc while Vpp is high. An NMOS gated by Vcc is connected, in series with a load element, between Vpp and ground. The node between the NMOS and the load element gates a PMOS which is interposed between Vpp and the memory. Thus when Vcc fails while Vpp is high, the NMOS will turn off, and the load element will pull up the gate of the PMOS to turn it off, interrupting the Vpp supply. This prevents spurious write or erase operations under these circumstances. The circuit can be designed to trigger at threshold voltages as low as V.sub.TN, and is thus particularly advantageous for operation with specified Vcc values of 3 Volts or less.

Abstract: A circuit for the generation of a time-stabilized output pulse Iout comprises a capacitor biased by two completely independent voltages whose bias voltages are fixed by a current generator through current mirrors and are therefore very stable.

Abstract: In a half-bridge output stage employing a complementary pair of output power transistors, each driven through an integrating stage for controlling the slew-rate, a single integration capacitance is conveniently shared by the two integrating stages that drive the power transistors. A pair of switches connect the single integrating capacitance to the input of either one of the two integrating stages and are controlled by a pair of nonoverlapping signals that have a certain advance with respect to the pair of logic signals that drive the half-bridge stage. In the case of a driving system of a multi-phase machine, the two configuring switches of the single integration capacitor may be driven by a pair of control signals that drive a different phase winding of the multi-phase machine, thus eliminating the need for dedicated circuitry for generating said pair of anticipated signals to control the configuration switches.

Abstract: A fast-discharge switch is controlled by a comparator sensing the voltage difference between the output node and the input node of a driving integrator stage that controls the slew-rate of a power switching output transistor. The fast-discharge switch turns off automatically when the output power transistor reaches (in the case of a MOS transistor) or exits (in the case of a bipolar transistor) saturation. The circuit of the invention accelerates the discharge thus reducing the turn-off delay and is insensitive of load conditions and does not affect the performance of the integrating (driver) stage that control the slew-rate.