Abstract: To reduce the risk of breakage of the moving parts of an integrated microstructure during manufacture steps causing mechanical stresses to the moving parts, a temporary immobilization and support structure is formed, whereby a moving region of the microstructure is temporarily integral with the fixed region. The temporary structure is removed at the end of the assembly operations by non-mechanical removal methods. According to one solution, the temporary structure is formed by a fusible element removed by melting or evaporation, by applying a sufficient quantity of energy thereto. Alternatively, a structural region of polymer material is formed in the trench separating the moving part from the fixed part, or an adhesive material layer sensitive to ultraviolet radiation is applied.

Abstract: A flash EEPROM memory cell comprises source and drain regions defining a channel region therebetween, a floating gate and a control gate. The source and drain regions are first and second doped semiconductor regions of a first conductivity type formed in a first active area region of a semiconductor material layer of a second conductivity type; the control gate comprises a third doped semiconductor region of the first conductivity type formed in a second active area region of the semiconductor material layer; and the floating gate comprises a polysilicon strip insulatively disposed over the channel region and insulatively extending over the third doped semiconductor region.

Abstract: A method and apparatus for decoding a bitstream (100) of transform coded multi-channel audio data. The bitstream is subjected to a block decoding process (101) to obtain for each input audio channel within the multi-channel audio data a corresponding block of frequency coefficients (102). Each block of frequency coefficients (102) is assigned a higher precision inverse transform or a lower precision inverse transform according to predetermined characteristics of the audio data represented by the block. The blocks of frequency coefficients are subsequently subjected to the assigned transform (105, 106) and an output audio signal (108) is generated in response to each of the higher and lower precision inverse transform processes.

Abstract: The invention relates to a process for manufacturing a light sensor device in a standard CMOS process, including, implanting active areas on a semiconductor substrate to obtain a first integrated region of a corresponding photosensor; and forming a stack of layers having different thickness and refractive index layers over the photosensor to provide interferential filters for the same photosensor. At least one of the above mentioned layers is formed by a transparent metallic oxide having a high refraction index and a corresponding high dielectric constant. In this manner, due to the transparency of the high refraction index material, the design of interferential resonators is rendered more flexible making possible the use of a stack of layers including more than one high refraction index layer.

Abstract: The invention relates to a Class AB operational amplifier providing both output gain enhancement and adaptative output bias. The operational amplifier includes first and second output terminals; a main differential stage having first and second differential inputs and a first differential output stage; a first adaptatively biased, boosted output stage coupling the first differential output stage to the output terminal. Each output stage includes a first NMOS output transistor having a control terminal, a first terminal coupled to the respective output terminal, and a second terminal, and includes a first output amplifier having a first input coupled to the second terminal of the first output transistor, a second input coupled to the first differential output stage to provide adaptative bias for the first boosted output stage, and an output coupled to the control terminal of the first output transistor.

Abstract: The memory array comprises a plurality of cells, grouped together in sectors and arranged in sector rows and columns, and has both hierarchical row decoding and hierarchical column decoding. Global word lines are connected to at least two word lines in each sector, through local row decoders; global bit lines are connected to at least two local bit lines in each sector, through local column decoders. The global column decoder is arranged in the center of the memory array, and separates from each other an upper half and a lower half of the memory array. Sense amplifiers are also arranged in the middle of the array, thus saving space. This architecture also provides lesser stress of the cells, better reliability, and better production performance. In addition, each sector is completely disconnected from the remaining sectors, and only the faulty row or column of a single sector should be doubled.

Abstract: A drive architecture for electric loads, and in particular for loads of light sources is presented. The architecture includes first and second drive circuit blocks connected in series with each other into a half-bridge configuration between first and second terminals of a rectified electric power supply network for the light source. Each drive circuit block has a respective secondary winding of a transformer associated therewith and includes at least a power device and a control circuit portion for controlling the power device. Each control circuit portion of each drive circuit block is subjected to a trigger action directly by its associated secondary winding to generate a high-frequency AC current for driving the light source.

Abstract: A semiconductor device includes at least two pads for the input of external signals and/or for the output of signals from said semiconductor device, at least two uncoupling buffers each connected to each one of said pads, at least one multiplexer connected to said pads by means of said uncoupling buffers and at least one memory element suitable to generate a configuration signal operating on said multiplexer and said uncoupling buffers to selectively enable one or the other of said pads.

Abstract: A comparator of a first digital value of n bits having CMOS voltage levels with a second digital value of n bits having ECL, or CML voltage levels, including a decoder in CMOS technology provided to provide 2n CMOS signals, each of which corresponds to a different product of n bits, each of the n bits being a respective bit of the first digital value or its complement; 2n AND gates in ECL or CML technology respectively associated with the 2n CMOS signals, connected to implement an OR function of 2n ECL or CML signals, each of which corresponds to a different product of n bits taken from among the bits of the second value or their complements, according to the same choice as for the product of n bits of the respective CMOS signal; and means for deactivating the AND gates associated with the CMOS signals to 0.

Abstract: A method for identifying fingerprints includes the steps of acquiring a primary image and a secondary image; determining notable points in the primary image; comparing with one another the primary image and the secondary image in order to identify the correspondences between the primary image and the secondary image; and validating the possible correspondences. The comparison between the primary image and the secondary image is based on comparison of the regions which surround the notable points on the primary image, with all the points of the secondary image, through a flash cell array, such as to obtain lists of points in the secondary image which are probably associated with the notable points.

Abstract: A process formes a structure incorporating at least one circuitry transistor and at least one non-volatile memory cell of the EEPROM type with two self-aligned polysilicon levels having a storage transistor and an associated selection transistor in a substrate of semiconductor material including field oxide regions bounding active area regions. The process comprises the steps of in the active area regions, forming a gate oxide layer and defining a tunnel oxide region included in the gate oxide layer depositing and partly defining a first polysilicon layer forming an interpoly dielectric layer and removing the interpoly dielectric layer at least at the circuitry transistor depositing a second polysilicon layer selectively etching away the second polysilicon layer at the cell, and the first and second polysilicon layers at the circuitry transistor and selectively etching away the interpoly dielectric layer and the first polysilicon layer at the cell.

Abstract: The read circuit comprises an array branch having an input array node connected, via an array bit line, to an array cell; a reference branch having an input reference node connected, via a reference bit line, to a reference cell; a current-to-voltage converter connected to an output array node of the array branch and to an output reference node of the reference branch to supply on the output array node and the output reference node the respective electric potentials correlated to the currents flowing in the array memory cell and, respectively, in the reference memory cell; and a comparator connected at input to the output array node and output reference node and supplying as output a signal indicative of the contents stored in the array memory cell; and an array decoupling stage arranged between the input array node and the output array node to decouple the electric potentials of the input and output array nodes from one another.

Abstract: A method and computer for processing an incoming data stream, for example of video or audio data is described. A system memory is divided into first and second memory spaces, the first memory space for holding a data stream and the second memory space for holding a set of program data. A cache has first and second partitions allocated exclusively respectively to the first and second memory spaces. In this manner, when the data stream is transferred between an execution unit and the main memory, program data is not evicted from the cache.

Abstract: An output buffer device having first and second supply voltage references, the first voltage reference being lower in value than the second voltage reference. The output buffer device includes first and second complementary MOS transistors, which transistors are connected in series together between one of the supply voltage references and a further voltage reference, have gate terminals connected together and to an input terminal of this buffer device, and have drain terminals connected together and to an output terminal of the buffer device. Advantageously, the first transistor is connected to the first supply voltage reference. Furthermore, the output buffer device comprises at least one additional drive MOS transistor of the same type as the first MOS transistor and placed between the second supply voltage reference and the output terminal of the buffer device.

Abstract: The read circuit includes a biasing stage connected to the memory cell to be read and having the purpose of biasing the drain terminal of the memory cell at a preset operating potential, typically 1 V; and a regulating circuit connected to a supply line set at a supply voltage and supplying to the biasing stage a bias current which is stable as the temperature and the supply voltage vary.

Abstract: The structure allows checking an integrated electronic device comprising an oxide layer to be measured located above a doped pocket of a wafer of doped semiconductor material and arranged adjacent to a gate region of polycrystalline semiconductor material. The structure is formed at a suitable point of the wafer and comprises an oxide test region of the same material, having the same thickness and the same electrical characteristics as the oxide layer to be measured and a polycrystalline region of the same material, having the same thickness and the same electrical characteristics as the gate region. The polycrystalline region extends preferably along the perimeter of a square and delimits laterally the oxide test region, the area of which is greater than the area of the oxide layer to be measured so as to allow non-destructive testing, on-line, of the oxide layer to be measured during an early stage of the manufacturing process.

Abstract: Presented is a method of enhancing the rate of removal of a photoresist layer from wafers of semiconductor material after the latter have gone through various process steps to define the patterns of integrated circuits. The method includes heating the wafer and treating it with low-pressure steam in a vacuum environment before starting to remove the photoresist by plasma or wet solutions. This pre-treatment of the photoresists allows the time for removing the photoresist to be reduced substantially and eliminates problems from residue.

Abstract: A method for addressing redundant columns in a nonvolatile memory, which receives, at inputs, selection addresses and comprises a plurality of redundant columns, each including a respective bit line and a plurality of memory cells connected to the bit line. The addressing method comprises the steps of: detecting a transition in the selection addresses; starting charging of all the bit lines upon detection of the transition in the addresses; then detecting whether one of the redundant columns is addressed; should one of the redundant columns be found to be addressed, proceeding with charging of the bit line of the redundant column addressed and interrupting charging of the bit lines of the redundant columns not addressed; and should none of the redundant columns be found to be addressed, interrupting charging of all the bit lines.

Abstract: Presented is a DC/DC converting circuit adapted to convert a DC input voltage to a DC output voltage. The converting circuit uses, as its synchronous rectifier member, a PMOS bipolar power transistor of the PMOS type, and allows it to be turned on by a control logic circuit capable of quickly sensing automatically the difference in electric potential between a conduction terminal and the body terminal of the transistor.

Abstract: A low-consumption TTL-CMOS input buffer stage includes a chain of inverters cascade connected between an input receiving electric signals at a TTL logic level and an output reproducing electric signals at a CMOS logic level, and powered between a first or supply voltage reference and a second or ground reference. Advantageously, the first inverter in the chain includes a means of selecting the delivery path to the stage according to an activate signal for a low-consumption operation mode. In essence, the first inverter of the buffer has two signal paths: one for normal operation and the other for low consumption operation.