Abstract: An amplifier having an input; an output supplying an output signal, and a feedback network connected between the input and the output, and a distortion detection circuit. The feedback network includes a first and a second feedback element arranged in series and forming an intermediate node supplying an intermediate signal in phase with the output signal in absence of distortion, and in phase-opposition with the output signal in presence of distortion. The distortion detection circuit includes a phase-comparating circuit which detects the phase of the output signal and of the intermediate signal, and generates a distortion-indicative signal, when the intermediate signal is in phase opposition with respect to the output signal.

Abstract: An integrated device comprises at least one circuit element and a plurality of trimming elements which can be connected selectively to the at least one circuit element in order to achieve a predetermined tolerance of a characteristic parameter of the at least one circuit element; the integrated device includes a plurality of electronic switches, each of which can be switched between a first state and a second state in which it activates and deactivates a corresponding one of the trimming elements, respectively, and a memory for storing an indication of the states of the electronic switches and for operating each electronic switch in the first state or in the second state according to the indication stored.

Abstract: A voltage generator formed of a charge circuit and a discharge circuit having a common programmable voltage divider with variable resistance; the programmable voltage divider including a plurality of resistors arranged in series and selectively connectable to define alternatively a step-wise increasing program voltage and a fixed verify voltage. The charge circuit formed of a voltage regulator supplying at the output the precise voltage value determined by the programmable voltage divider, and the discharge circuit intervening when the output voltage must be switched in a controlled manner from a higher value to a lower value.

Abstract: The ROM memory cell, not decodable by visual inspection comprises a substrate of semiconductor material having a first conductivity type, in particular P−. A first MOS device having a first threshold voltage is formed in a first portion of the substrate, and a MOS device having a second threshold voltage, greater than the first threshold voltage, is formed in a second portion of the substrate adjacent to the first portion. The second MOS device is a diode reverse biased during a reading phase of the ROM memory cell and comprises a source region having the first conductivity type and a drain region having a second conductivity type. The source region has a level of doping higher than that of the substrate.

Abstract: Described in the disclosure is a method for fabricating high-capacitance capacitive elements that are integrated in a semiconductor substrate. First a dielectric layer is formed over the surface of the substrate and a metal layer is deposited thereon. The metal layer is patterned and etched to form lower plates of the capacitive elements, as well as to form interconnection pads. Then, an intermediate dielectric layer is deposited on the lower plates and interconnection pads, and over the entire exposed surface of the substrate. Following that, a sacrificial conductive layer is deposited onto the intermediate dielectric layer, and the upper plates of the capacitive elements are formed out of the sacrificial conductive layer. Then, an upper dielectric layer is formed over the entire semiconductor, and openings are formed in this layer for the upper plates and the interconnection pads.

Abstract: A non-volatile memory device with configurable row redundancy includes a non-volatile memory having a matrix of memory cells and a matrix of redundant memory cells, both organized into rows and columns. The memory device also includes row and column decoding circuits; read and modify circuits for reading and modifying data stored in the memory cells; and at least one associative memory matrix, also organized into rows and columns, able to store the addresses of faulty rows, and control circuits for controlling the associative memory matrix. The memory device further includes a circuit for recognizing and comparing selected row addresses with faulty row addresses contained in the associative memory matrix, such as to produce de-selection of the faulty row and selection of the corresponding redundant cell row in the event of a valid recognition; and a configuration register, also comprising a matrix of non-volatile memory cells, and associated control circuits.

Abstract: A positioning system for a read/write head of a disk drive includes a rotatable data disk, a read/write head movable over the disk, a voice coil motor (VCM) connected to the head and a source of digital position signals. A control circuit includes means for generating a VCM control current, a sensor for sensing the VCM current and an amplifier having an inverting input connected to a reference voltage source through a resistor and to a sensor output, a non-inverting input connected to the source of digital position signals through a DAC and an output connected to an input of the drive means.

Abstract: Fully-differential, switched-capacitor circuit having a first and second input terminal, and including: an operational amplifier having a first and a second differential input, a first and a second output terminal and a bias control terminal; a feedback network, connected between the differential outputs and the input terminals, and having intermediate nodes connected to the differential inputs of the operational amplifier; and a control circuit, including a detection network and an error amplifier. The error amplifier has a first input receiving a desired common-mode voltage, and an output connected to the bias control terminal and supplying a control voltage. The detection network has a first and a second input connected directly, respectively, to the second input terminal of the operational amplifier, and an output connected to a second input of the error amplifier, and supplying a common-mode drive voltage.

Abstract: Presented is a circuit and method capable to digitally control and, in particular, to control the switching of one or two MOSFETs used as rectifiers in switched mode power supply isolated topologies. Basic circuit implementation of the presented technique is also introduced. A controller has a fixed frequency square wave signal main clock input, generically switching from a low to a high value in two different time intervals. The controller has one or two square wave outputs, swinging from low to high in phase or in opposite with respect to the clock signal. The digital control method is able to generate output signals timed to anticipate output transitions from high to low level with respect to the clock signal transitions. In the control scheme, one or two other secondary inputs set the amount of anticipation time of the respective transitions of the outputs.

Abstract: Presented is a high-efficiency CMOS voltage shifter including a differential cell circuit portion powered between first and second supply voltage references, and a first pair of transistors connected into a cascode configuration. Also included is a first divider of the first supply voltage reference for generating a reference voltage value on a first internal circuit node, which is connected to the gate terminals of the transistors in the first pair. The voltage shifter further includes a second divider of the first supply voltage reference for controlling the value of the reference voltage by means of a control circuit portion acting on the first divider.

Abstract: A memory device having an associative memory for the storage of data belonging to a plurality of classes. The associative memory has a plurality of memory locations aligned along rows and columns for the storage of data along the rows. Each memory row has a plurality of groups of memory locations, each storing a respective datum, wherein groups of memory locations adjacent along one and the same row store data belonging to different classes. Groups of memory locations adjacent in the direction of the columns and disposed on different rows store data belonging to one and the same class. Each class has data having a different maximum lengths. The device is particularly suitable for the storage of words belonging to a dictionary for automatic recognition of words in a written text.

Abstract: A nonvolatile memory having a NOR architecture has a memory array including a plurality of memory cells arranged in rows and columns in NOR configuration, the memory cells arranged on a same column being connected to one of a plurality of bit lines; and a column decoder. The column decoder comprises a plurality of selection stages, each of which is connected to respective bit lines and receives first bit line addressing signals. The selection stages comprise word programming selectors controlled by the first bit line addressing signals and supplying a programming voltage to only one of the bit lines of each selection stage. Each selection stage moreover comprises a string programming selection circuit controlled by second bit line addressing signals thereby simultaneously supplying the programming voltage to a plurality of the bit lines of each selection stage.

Abstract: An SC filter with intrinsic anti-alias function for adjustably decreasing or increasing the amplitude of audio signals in a predetermined frequency range. The SC filter includes a filter module having an RC network with at least one frequency-response-determining RC member whose resistor component R is realized in SC technology. The SC filter also includes a setting means connected to the filter module such that its setting determines the frequency response of the SC filter. The setting means also renders possible a neutral setting in which the effective audio signal path of the SC filter circumvents the filter module so that no decrease or increase of the amplitude of individual frequency portions takes place. An anti-alias low pass filter unit is connected into the audio signal path when the setting means is not set to the neutral setting and the anti-alias low pass filter unit is not located in the audio signal path when the setting means is set to the neutral setting.

Abstract: Presented is a process for manufacturing circuit structures of the SOI type integrated on a semiconductor substrate having a first type of conductivity. The process includes forming at least one well with a second type of conductivity in the semiconductor substrate and forming a hole within the well. The hole is then coated with an insulating coating layer, and an opening is formed through the insulating coating layer at the bottom of the hole. The hole is then filled with an epitaxial layer grown from a seed that was made accessible through the opening in the hole.

Abstract: A process for the manufacturing of an integrated circuit including a low operating voltage, high-performance logic circuitry and an embedded memory device having a high operating voltage higher than the low operating voltage of the logic circuitry, providing for: on first portions of a semiconductor substrate, forming a first gate oxide layer for first transistors operating at the high operating voltage; on second portions of the semiconductor substrate, forming a second gate oxide layer for memory cells of the memory device; on the first and second gate oxide layers, forming from a first polysilicon layer gate electrodes for the first transistors, and floating-gate electrodes for the memory cells; forming over the floating-gate electrodes of the memory cells a dielectric layer; on third portions of the semiconductor substrate, forming a third gate oxide layer for second transistors operating at the low operating voltage; on the dielectric layer and on the third portions of the semiconductor substrate, formin

Abstract: A microactuator comprises a stator element and a rotor element which are capacitively coupled. The rotor element comprises a suspended mass and a plurality of movable drive arms extending radially from the suspended mass and biased at a reference potential. The stator element comprises a plurality of first and second fixed drive arms associated with respective movable drive arms and biased at a first drive potential. A mechanical damping structure is formed by at least one movable damping arm extending radially from the suspended mass and by at least one first and one second fixed damping arm associated with the movable damping arm and biased at said reference potential, to dampen settling oscillations of the rotor element.

Abstract: A process for manufacturing a resistive structure that has a polysilicon strip laid above a semiconductor substrate is presented. The process begins by using a mask to cover the polysilicon strip. Then, several apertures are made in the mask until portions of the semiconductor strip are uncovered. Next, a dopant is implanted in the polysilicon semiconductor strip through the apertures. Finally, the resistive structure is subjected to a thermal process for diffusing the dopant in such a way to obtain a variable concentration profile in the semiconductor strip.

Abstract: A memory device comprises a plurality of independent memory sectors, external address signal inputs for receiving external address signals that address individual memory locations of the memory device, the external address signals including external memory sector address signals allowing for individually addressing each memory sector, and a memory sector selection circuit for selecting one of the plurality of memory sectors according to a value of the external memory sector address signals. A first and a second alternative internal memory sector address signal paths are provided for supplying the external memory sector address signals to the memory sector selection circuit, the first path providing no logic inversion and the second path providing logic inversion.

Abstract: A reading circuit having an array branch connected to a multi-level array memory cell; a reference branch connected to a reference memory cell; a current/voltage converter stage formed of a current mirror having a variable mirror ratio, connected to the array and reference branches, and supplying at an array node and at a reference node respectively an array potential and a reference potential, which are correlated respectively to the currents flowing in the array branch and in the reference branch; and a comparator stage having a first and a second input connected to the array and reference nodes for comparing with one another the array and reference potentials.

Abstract: A varactor has a gate region, first and second biasing regions of N+ type embedded in a well, and first and second extraction regions of P+ type, forming a pair of PN junctions with the well. The PN junctions are inversely biased and extract charge accumulating in the well, below the gate region, when the gate region is biased to a lower voltage than a predetermined threshold value.