Abstract: To achieve a constant control range in an integrator-filter circuit for filtering a push-pull signal, having at least two integrator elements (1) this second control current being having resistors (11, 12) arranged at its inputs, a subsequent current multiplier (13) having two signal inputs (14, 15) and preceding a push-pull amplifier (18) with an inverting input (20) and a non-inverting input (19), having inverting output (21) fed back to the non-inverting input (19) and a non-inverting output (23) fed back to the inverting input (20) via capacitances (22, 24), the current multiplier (13) receiving, at two control inputs (37, 38), a first and a second control current (I.sub.1, I.sub.2) for adjusting the integration time constant of the integrator element (1) is adjustable and from which the second control current (I.sub.2) flows in substantially two halves through the signal inputs (14, 15) of the current multiplier (13), an associated third control current (I.sub.

Abstract: An optical scanning device for scanning an optically readable record carrier (1) includes a radiation source (5), a radiation-sensitive detection system (7), and an optical scanning unit for focusing a scanning beam (3) produced by the radiation source to a scanning spot (9) on the record carrier. The scanning unit including a lens system having an optical axis (13), which lens system includes a first lens unit having a main lens (15) and a second lens unit having an auxiliary lens (17). The scanning device further includes a first detection unit involved in detection of the main lens with respect to the record carrier, and a second detection unit involved in detection of the auxiliary lens.

Abstract: A multi-standard receiver is which is particularly suited for reception of B/G-PAL and D/K-PAL TV signals. In the receiver, a tuner (TUN) selects a desired TV signal which is passed to a multi-standard demodulator (DEM) via an intermediate-frequency filter circuit (IFF). To obtain good performance, particularly in view of EN 55020 requirements, at moderate costs, the intermediate-frequency filter circuit (IFF) includes a main filter (FIL1) and an auxiliary filter (FIL2). The main filter (FIL1) may have a relatively narrow band, for example, just capable of passing a full B/G-PAL TV IF signal to the demodulator circuit. For D/K-PAL reception, the auxiliary filter (FIL2) is effectively switched (SW) in parallel with the main filter (FIL1). The auxiliary filter (FIL2) transfers the D/K-PAL sound carrier to the demodulator circuit (DEM), which transfer is not possible via the relatively narrow-band main filter (FIL1).

Abstract: A lateral thin-film Silicon-On-Insulator (SOI) PMOS device includes a semiconductor substrate, a buried insulating layer on the substrate and a lateral PMOS transistor device in an SOI layer on the buried insulating layer and having a source region of p-type conductivity formed in a body region of n-type conductivity. A lateral drift region of n-type conductivity is provided adjacent the body region, and a drain region of p-type conductivity is provided laterally spaced apart from the body region by the drift region. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and extending over a part of the lateral drift region adjacent the body region, with the gate electrode being insulated from the body region and drift region by an insulation region.

Abstract: This device includes a main signal path in which a capacitor is included upstream of an analog/digital converter in which a conversion is triggered by a clock. According to the invention, the output of the analog/digital converter is connected to inputs of several threshold detectors which have positive detection thresholds in a progression proportional to consecutive powers of two, and several other threshold detectors which have negative detection thresholds which also progress proportionally to consecutive powers of two, which threshold detectors control current generators whose currents are added together into the capacitor.

Abstract: Generally speaking, steep signal edges are required for the processing of digital signals; however, notably externally supplied signals which are conducted, for example, via long cables are liable to have comparatively flat signal edges. By selecting appropriate switching thresholds, delays between an input signal and an output signal of a circuit can be minimized. The circuit selects the first switching threshold at a low value of the input signal and switches the first threshold value to a second, higher threshold value when the input signal exceeds a further, higher threshold value. Thus, an output signal is generated comparatively quickly after the beginning of the positive-going or negative-going edge of the input signal. This can be realized by switching over the switching threshold of a comparator or by utilizing two comparators.

Abstract: A fingerprint sensing device comprises an array of sense elements (12) which each include a sense electrode (33), providing in combination with an overlying fingerprint part a capacitance (35), and first and second diode devices (30, 31) connected respectively between the sense electrode and associated ones (18, 20) of first and second sets (e.g. row and column) address conductors. An address circuit (22, 24) connected to the address conductors biases the diode devices in a respective address period such that a potential is applied via the first address conductor and the first diode device to the sense electrode and thereafter stored charge, indicative of the capacitance, is transferred via the second diode device to the second address conductor. The device offers fast, reliable, scanning and can conveniently be implemented using thin film technology for low cost and compactness.

Abstract: A description is given of an optical switching device (1) comprising a transparent substrate (3), a switching film (5) of a hydride compound of a trivalent transition or rare earth metal having a thickness of 300 nm, and a palladium capping layer (7) having a thickness of 30 nm. The capping layer is in contact with hydrogen. An electric current through the switching film (5) can be switched on and off between the terminals (9, 11). Joule heating of the switching film (5) causes a rapid transition from the transparent trihydride state to the absorbing dihydride state. By switching off the current, the switching film (5) cools down, which results in the formation of the absorbing dihydride state. The conversion between both states is reversible and can be repeated many times. The device can be used for controlling light beams, or it can be used in or for a display. Optionally, cooling of the switching film (5) is obtained with a Peltier element in thermal contact with the switching film (5).

Abstract: The invention relates to a method of manufacturing a discrete or integrated bipolar transistor comprising a base (1A), an emitter (2) and a collector (3). The base (1A) and a connecting region (1B) of the base (1A) are formed by providing a semiconductor body (10) with a doped semiconducting layer (1) which locally borders on a monocrystalline part (3) of the semiconductor body which forms the collector (3). Outside said base, the layer (1) borders on a non-monocrystalline part (4) of the semiconductor body (10) and forms a non-monocrystalline connecting region (1B) of the base (1A). By means of a mask (5), the doping concentration of the layer (1) outside the mask (5) is selectively increased, resulting in a highly conducting connection region (1B) and a very fast transistor. In the known method, an ion implantation is used for this purpose.

Abstract: A frequency-independent voltage divider includes a series arrangement of resistors connected between an input terminal and a reference terminal for receiving an input signal. An output terminal for supplying an output signal is coupled to a tap of the series arrangement. The influence of parasitic capacitances is eliminated by compensation capacitors.

Abstract: A method for the analog/digital conversion and an arrangement for the analog-to-digital conversion of an analog signal, particularly a picture signal, into a digital signal by at least two analog-to-digital converters which are clocked by at least two phase-shifted clock signals and whose output signals are combined to a digital picture signal by a multiplexer is disclosed. In order to achieve an individual adaptation to different characteristics of the analog-to-digital converters, each analog-to-digital converter is preceded by an automatic gain control circuit and a clamping stage, which clamps the picture signal at a given amplitude value, the analog signal being applied to the automatic gain control circuit and the clamping stage.

Abstract: An oscillator is formed by a resonator (RES) coupled to an amplifier (AMP) via a coupling path (COP). In order to counter unwanted oscillations due to parasitic resonances in the coupling path (COP), the coupling path (COP) includes a series resistance (RS). This allows better performance in terms of noise for countering unwanted oscillations, despite the fact that the series resistance is in itself a source of noise. An even better noise-performance is obtained if the coupling path (COP) also includes a series capacitance. Such a series capacitance will also effectively widen a frequency range over which the oscillator can be tuned.

Abstract: The invention relates to a synchronous sigma-delta modulator with a feedback loop which comprises an integrating filter followed by a polyphase sampler generating a plurality of phase shifted samples and an adder to add the plurality of phase shifted samples and to feed the added samples back to the input of the integrating filter.

Abstract: A description is given of a precision resistor. The resistor comprises a substrate having two connections which are electrically interconnected via a resistance path, said resistance path comprising a first path portion having a positive TCR and a second path portion having a negative TCR. The resistor is characterized in that the resistance material of both path portions is selected so that the resistance values and the absolute TCRs of both path portions are comparable and in that both path portions are trimmed so that the resistor has desired resistance and TCR values. Preferably, the resistance materials used for the path portions consist of an alloy of substantially the same composition on the basis of CuNi or NiCrAl. The invention makes it possible to very accurately and reproducibly mass-produce precision resistors.

Abstract: A method of forming a laterally-varying charge profile in a silicon carbide substrate includes the steps of forming a silicon nitride layer on a polysilicon layer formed on the silicon carbide substrate, and patterning the silicon nitride layer to provide a plurality of silicon nitrite layer segments which are spaced apart in the lateral direction and which are provided with openings therebetween which are of varying widths. The polysilicon layer is oxidized using the layer segments as an oxidation mask to form a silicon dioxide layer of varying thickness from the polysilicon layer and to form a polysilicon layer portion therebeneath of varying thickness. The silicon dioxide layer and silicon nitride layer segments are removed, and a dopant is ion implanted into the silicon carbide substrate using the polysilicon layer portion of varying thickness as an implantation mask to form a laterally-varying charge profile in the silicon carbide substrate.

Abstract: A method of providing a gettering scheme in the manufacture of individual Silicon-On-Insulator (SOI) integrated circuits from an SOI wafer containing a number of such integrated circuits includes the steps of providing a gettering material in scribe lanes along which the SOI wafer is to be diced to obtain the individual SOI integrated circuits. The SOI wafer is then diced along the scribe lanes, leaving a portion of the gettering material on the diced edges of the individual integrated circuits. This method provides a simple and effective method for gettering in SOI technology in which diffusing impurities can be trapped before diffusing into the active area of the integrated circuits.

Abstract: An A/D conversion device, for converting an analog input voltage Vin into a digital output signal encoded in N bits OUT(0:N-1), includes a first decoder (FNE) for generating the least significant bits OUT(0:K) of the output signal, and a second decoder (CRS) for generating signals which are representative of transitions to which the most significant bits OUT(i+1) of the output signal are to be submitted, for i=k to N-2. Each transition of the bit OUT(i+1) is signaled by signals referred to as antecedent signals A(i+1) and subsequent signals P(i+1), while an encoder (ENC) is provided for synchronizing each transition with a transition of the bit OUT(i) of the next lower weight.

Abstract: An electronic apparatus contains a bus conductor, a load circuit connected to the bus conductor for pulling a potential of the bus conductor towards a quiescent level and stations interconnected by the bus conductor. At least one of the stations contains a wired logic drive circuit and an arbitration circuit connected to the wired logic drive circuit for executing an arbitration wherein the wired logic drive circuits of different ones of the stations may each pull the potential against the load circuit. The electronic apparatus comprises a detector for producing a detection signal when the at least one station wins the arbitration. In response to the detection signal the load circuit is switched to an increased current supply capability state. In the increased current supply capability state the load circuit supplies a greater current to the bus conductor than during arbitration at least at times when the potential starts changing towards the quiescent level.

Abstract: A resonant mode power supply includes a d.c. voltage source and switching elements for alternatively connecting an oscillating circuit, including the primary winding of a transformer, to the d.c. voltage source and to ground. In order to detect faults in the load on a secondary side of the transformer which would cause the resonant mode power supply to attempt to supply and inordinate amount of power, the power on the primary side is detected and if this primary power exceeds a predetermined threshold value, the frequency of oscillation is increased to reduce the power. If the fault condition persists, the switching of the switching elements is discontinued.

Abstract: The manufacture of a trench-gate semiconductor device, for example a MOSFET or IGBT, includes the steps of forming at a surface (10a) of a semiconductor body (10) a first mask (51) having a first window (51a), and later forming a second mask (52) having a smaller window (52a) by providing sidewall extensions (52b) on the first mask (51). A source region (13) is formed by dopant (63) introduced via the first window (51a), whereas a trench (20) is etched at the smaller window (52a) to extend through a body region (15) and into an underlying portion of a drain region (14). The gate (11) is provided in the trench (20) adjacent to where the channel (12) of the device is accommodated. After removing the second mask (52), a source electrode (23) is provided to contact the source region (13) and an adjacent region (15) of the body (10) at the surface (10a).