Patents Represented by Attorney, Agent or Law Firm Steven R. Biren
  • Patent number: 6621400
    Abstract: An electronic part and a complex electronic device each include a substrate that contains at least one material selected from a dielectric material and a magnetic material and two or more coils that are formed in the inside of the substrate. The coils are in the form of spirals and extend in a predetermined direction. The electronic part and the complex electronic device each also include two grounding electrodes that are located in the inside or the outer surface of the substrate, the two grounding electrodes being aligned in the predetermined direction in such a way that the two or more coils are located between the two ground electrodes. Additionally the electronic part and the complex electronic device each include first filter and a second filter located in the inside of the substrate. The first filter contains at least one of the two or more coils, and the second filter contains at least one other of the two or more coils. The first filter and the second filter have the mutually different pass-bands.
    Type: Grant
    Filed: September 26, 2001
    Date of Patent: September 16, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventor: Kenichi Horie
  • Patent number: 6621440
    Abstract: A digital to analogue converter comprising at least two resistor ladders (A, B) and at least two banks of switches (SwA, SwB etc.), means for controlling said switches in accordance with at least the MSBs of a digital input signal, connecting means (Rx) for connecting the two resistor ladders at their ends to form a ring topology, said connecting means comprising means for deriving two analogue output signals to form a differential analogue output signal. The output means may include further resistance ladders and switch banks (C, D) to provide higher resolution in segmented fashion. The first and second banks of switches are on the supply side of the ladders, to avoid loading effects. Optionally each switch forms one of a matched pair of switches controlled to be closed and opened as a pair, the second switch in operation providing feedback to an amplifier (AMPA, AMPB) such that a reference voltage can be imposed on the ladder independently of the resistance of the switches.
    Type: Grant
    Filed: April 2, 2002
    Date of Patent: September 16, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventor: Christopher M. Gorman
  • Patent number: 6621163
    Abstract: An electronic device includes an electronic component 2, 3, such as a SAW (=Surface Acoustic Wave) filter 2, 3 having connection areas 4, 5. The filter 2, 3 is sealed off from the environment by means of a cover 6 forming a cavity 7 above the filter 2, 3. According to the invention, the cover 6 is formed by a lacquer layer 6A which is provided, at the location of the filter 2, 3, with an opening 7′ and which is covered with a photoresist layer 6B closing the opening 7′ such that the cavity 7 thus formed has a thickness above zero everywhere above the filter 2, 3. This enables an accurate and stable frequency selection by means of the filter 2, 3 and allows the device according to the invention to be very compact and easy to manufacture. Thus, the device according to the invention is very suitable for use in an application such as a mobile telephone, also after integration of the device with a semiconductor device.
    Type: Grant
    Filed: July 3, 2002
    Date of Patent: September 16, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Johannus Wilhelmus Weekamp, Jorrit Jorritsma, Edwin Petrus Alois Maria Tijssen, Marc Andre De Samber
  • Patent number: 6620669
    Abstract: A vertical power transistor trench-gate semiconductor device has an active area (100) accommodating transistor cells and an inactive area (200) accommodating a gate electrode (25) (FIG. 6). While an n-type layer (14) suitable for drain regions still extends to the semiconductor body surface (10a), gate material (11) is deposited in silicon dioxide insulated (17) trenches (20) and planarised to the top of the trenches (20) in the active (100) and inactive (200) areas. Implantation steps then provide p-type channel-accommodating body regions (15A) in the active area (100) and p-type regions (15B) in the inactive area (200), and then source regions (13) in the active area (100). Further gate material (111) is then provided extending from the gate material (11) in the inactive area (200) and onto a top surface insulating layer (17B) for contact with the gate electrode (25).
    Type: Grant
    Filed: May 21, 2002
    Date of Patent: September 16, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Erwin A. Hijzen, Michael A. A. in't Zandt
  • Patent number: 6620697
    Abstract: A silicon carbide lateral metal-oxide-semiconductor field-effect transistor (SiC LMOSFET) having a self-aligned drift region and method for forming the same is provided. Specifically, the SiC LMOSFET includes a source region, a drift region and a drain region. The source and drain regions are implanted using non self-aligned technology (i.e., prior to formation of the gate electrode and the gate oxide layer), while the drift region is implanted using self-aligned technology (i.e., after formation of the gate electrode and the gate oxide layer). By self-aligning the drift region to the gate electrode, the overlap between the two is minimized, which reduces the capacitance of the device. When capacitance is reduced, performance is improved.
    Type: Grant
    Filed: September 24, 2001
    Date of Patent: September 16, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Dev Alok, Rik Jos
  • Patent number: 6605862
    Abstract: A semiconductor device, such as a MOSFET or PN diode rectifier, has a p-n junction (24) between a first device region (23) and an underlying voltage-sustaining zone (20). Trenched field-shaping regions (40) extend through the voltage-sustaining zone (20) to improve the voltage-blocking and on-resistance characteristics of the device. The trenched field-shaping region (40) comprises a resistive path (42) accommodated in a trench (41) that has an insulating layer (44) at its side-walls. The insulating layer (44) dielectrically couples potential from the resistive path (42) to the voltage-sustaining zone (20) that is depleted in a voltage-blocking mode of operation of the device. The insulating layer (44) extends at the side-walls of the trench (41) to an upper level (81) that is higher than a lower level (82) at which the resistive path (42) starts in the trench (41).
    Type: Grant
    Filed: February 7, 2002
    Date of Patent: August 12, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Rob Van Dalen, Christelle Rochefort, Godefridus A. M. Hurkx
  • Patent number: 6606043
    Abstract: A method and arrangement for bit-synchronizing a &Sgr;&Dgr;-modulator uses a pre-filter to filter an incoming single bit bitstream. One or more of the integrator states of the &Sgr;&Dgr;-modulator are corrected by a signal which is calculated from the incoming bitstream and at least one of the pre-filtered input signal and the output bitstream of the &Sgr;&Dgr;-modulator.
    Type: Grant
    Filed: August 9, 2001
    Date of Patent: August 12, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventor: Derk Reefman
  • Patent number: 6603291
    Abstract: An integrated driver circuit includes a low side component and a synchronous dc voltage converter circuit. A sync FET (8) is controlled by a driver (32) powered between high and low voltage power connections (134, 138). A timing circuit (150) controls the driver circuit in accordance with a signal on a control input. The driver circuit (32) is isolated from the timing circuit (150), for example by a level shift circuit (136) and the low voltage power connection (138) of the driver circuit is directly connected to the source (108) of the sync FET (8). This arrangement is intended to reduce transient voltage effects.
    Type: Grant
    Filed: February 4, 2002
    Date of Patent: August 5, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Nicolas J. Wheeler, Leonardus A. De Groot, Philip Rutter
  • Patent number: 6600386
    Abstract: A thin-film coupler with a carrier substrate (1) and two strip lines disposed thereon, of which one represents the main coupler loop (2) and one the auxiliary coupler loop (3). The use of inexpensive carrier substrate materials and a compact construction are made possible through an integration of a strip line, a coil, or an LC combination into the auxiliary coupler loop (3). The integration of these components (4) achieves a phase shift in the frequency of the signal coupled out so that a broadband coupler is obtained which exhibits an identical coupling at at least two frequencies.
    Type: Grant
    Filed: March 31, 2000
    Date of Patent: July 29, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Hans-Peter Löbl, Rainer Kiewitt, Mareike Klee
  • Patent number: 6597306
    Abstract: A communication device includes detection a detector (28) adapted to detect a value (V) which represents a maximum amplitude value of a data carrier signal (DS) produced by a data carrier as it moves through a communication range (KB) of the communication device along a predetermined path and received with the aid of a receiver (23) of the communication device. The detector is adapted to supply a detection signal (RS) upon detection of the value (V) representing the maximum amplitude value.
    Type: Grant
    Filed: June 25, 2001
    Date of Patent: July 22, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventor: Peter Raggam
  • Patent number: 6597052
    Abstract: The invention relates to a so-called punch-through diode comprising a stack of, for example, an n++, p−, p+, n++ region (1, 2, 3, 4). In the known diode, these regions (1, 2, 3, 4) are arranged on a substrate (11) in said order. The diode is provided with connection conductors (5, 6). Such a diode does not have a steep I-V characteristic and hence is less suitable as a TVSD (=Transient Voltage Suppression Device). Particularly at voltages below 5 volts, a punch-through diode could form an attractive alternative for use as a TVSD. A punch-through diode according to the invention has an inverted structure, which means that the regions (1, 2, 3, 4) are positioned in reverse order on the substrate (11) and thus, the first region (1) adjoins the surface, and the fourth region (4) adjoins the substrate (11). Such a diode has a very steep I-V characteristic, is very suitable as a TVSD and functions very well at an operating voltage below 5 volts.
    Type: Grant
    Filed: February 13, 2001
    Date of Patent: July 22, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Godefridus Adrianus Maria Hurkx, Erwin Adolf Hijzen
  • Patent number: 6597893
    Abstract: A data carrier (1) on which a carrier signal (TS) can be applied to an electric circuit (3), comprises supply voltage generation means (6) which are arranged for generating a DC supply voltage (U) that can be tapped from a supply tapping point (10) while use is made of the carrier signal (TS), and further includes control means (11) for controlling the DC supply voltage (U) in accordance with a controlled variable signal (CV) that represents the carrier signal (TS) occurring at a control means circuit point (20), and further includes decoupling means (49) with the aid of which the control means circuit point (20) and the supply circuit point (10) can be decoupled from each other.
    Type: Grant
    Filed: August 17, 2001
    Date of Patent: July 22, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventor: Werner Zettler
  • Patent number: 6597250
    Abstract: A frequency synthesizer comprising a phase-locked loop that includes a phase-frequency comparator (16), at least a voltage-controlled oscillator (12) associated with a selection apparatus (50, 80, 82) of an oscillation frequency band, and a frequency divider (14) connected between the oscillator and the comparator. A voltage source proper (90) is connected to the selection apparatus for supplying it with a control voltage proper.
    Type: Grant
    Filed: September 27, 2001
    Date of Patent: July 22, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventor: Fabrice Jovenin
  • Patent number: 6596964
    Abstract: The present invention concerns a method of attaching at least one component (12) provided with a plurality of electrical connection terminals (18), to a connection support (10), in which: a) a connection support is provided, made of a material transparent to at least one wavelength of a laser beam, the support having terminals for receiving the component, b) the component (12) is disposed on the connection support (10), making the connection terminals of the component coincide with the reception terminals of the support, c) the connection terminals of the component are welded directly to the reception terminals of the support by applying a welding laser beam to the reception terminals, through the transparent material of the support.
    Type: Grant
    Filed: July 3, 2002
    Date of Patent: July 22, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventor: Jan Firmin Accou
  • Patent number: 6593797
    Abstract: A high-frequency integrated transistor module includes a bipolar transistor having at least one emitter finger, which is internally connected in series with a resistor to provide a DC current path for the circuit, and is internally connected in series with a capacitor to provide an RF current path for the module separate from the DC current path. The capacitor may be coupled to an RF ground connection, and the value of the capacitor may be selected to resonate with the value of the RF ground connection inductance in order to provide gain enhancement at a selected operating frequency range. In order to provide gain enhancement over a broader frequency bandwidth, two or more emitter fingers can be connected in series with respective capacitors of different values in order to provide at least two RF current paths having different resonant frequencies.
    Type: Grant
    Filed: June 18, 2002
    Date of Patent: July 15, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventor: Tirdad Sowlati
  • Patent number: 6593594
    Abstract: A lateral metal-oxide-semiconductor field effect transistor (LMOSFET) includes a layer of silicon carbide semiconductor material having a p-type conductivity, source and drain regions having n-type conductivities disposed in the silicon carbide semiconductor layer, and an insulated gate electrode disposed on the silicon carbide semiconductor layer. A silicon carbide semiconductor substrate having an n-type conductivity, supports the silicon carbide semiconductor layer. A second layer of silicon carbide semiconductor material having a p-type conductivity, is disposed between the substrate and the first silicon carbide semiconductor layer to prevent parasitic transistor effects. A sinker region having an n-type conductivity extends from the source contact to the silicon carbide semiconductor substrate to ground the substrate.
    Type: Grant
    Filed: December 21, 1999
    Date of Patent: July 15, 2003
    Assignee: Koninklijke Philips Electonics N.V.
    Inventor: Dev Alok
  • Patent number: 6593976
    Abstract: A method of returning to a program that is being received on a first channel is disclosed. The method includes storing data that characterizes at least one portion of the program. After storing this data, the user is free to change channels. The system automatically switches back to the first channel when data that characterizes a subsequent portion of the program matches the stored data.
    Type: Grant
    Filed: February 14, 2000
    Date of Patent: July 15, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventor: William P. Lord
  • Patent number: 6593974
    Abstract: A circuit arrangement for demodulating an intermediate-frequency video signal, comprising a video demodulator (1) and a phase-locked loop (5) formed as a Costas loop, in which an output signal of a controllable oscillator (12) arranged in the Costas loop and the intermediate frequency video signal are coupled to the video demodulator (1), should always supply a demodulated video signal of a predetermined polarity, independent of overmodulation occurring in the intermediate-frequency video signal.
    Type: Grant
    Filed: October 6, 2000
    Date of Patent: July 15, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Joachim Brilka, Thomas Hafemeister
  • Patent number: 6594531
    Abstract: A modular optimizer, for use in determining a configuration of a production line with one or more component placement machines, is configured to learn a foreign optimizer module associated with a component placement machine type foreign to the modular optimizer. The modular optimizer includes an adapting estimator which estimates an output value, such as a placement cycle time measure, for the foreign optimizer module. The estimated output value may be used in determining the configuration of the production line.
    Type: Grant
    Filed: December 22, 2000
    Date of Patent: July 15, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Larry J. Eshelman, J. David Schaffer
  • Patent number: 6593664
    Abstract: In a data carrier (1) with a chip module (3), the chip (5) of the chip module (3) is provided, in the region of its chip connecting layers (8), with a respective wire connecting means which is formed by a flat metal layer (10) and whereto an end (13), bonded in a wedge-shape fashion, of a bond wire (11) is connected.
    Type: Grant
    Filed: March 15, 2002
    Date of Patent: July 15, 2003
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Joachim Schober, Marcus Toth