Abstract: The present invention provides a video server. In one embodiment, the video server includes a perceptual analyzer configured to analyze frames of a video sequence and provide a video analysis file. The video server also includes a transmitter coupled to the perceptual analyzer and configured to transmit both the video sequence and the video analysis file. The present invention also provides a mobile client. In one embodiment, the mobile client includes a liquid crystal display (LCD) having a backlight and configured to provide a video sequence for the mobile client. The mobile client also includes a display processor, coupled to the LCD, configured to employ a received video analysis file to enhance at least one of a brightness and contrast of the video sequence and correspondingly reduce a backlight intensity of the backlight.

Abstract: A system for, and method of, enhancing I2C bus data rate and an electronic assembly including the system or the method. In one embodiment, the system includes: (1) a modulus register associable with a slave device and configured to contain a modulus and (2) data transfer logic associated with the modulus register and configured to transfer data from at least one memory location in the slave device to the I2C bus based on the modulus and a starting address and at least one acknowledgement signal received via the I2C bus.

Abstract: A serial interface interacting with a transmission pad system circuitry wherein a differential impedance is reckoned across the system voltage source, includes a scheme for controlling transmitter rise-fall transitions (to selectively speed up or slow down transitions) without requiring additional timing controls or affecting reflection coefficient of the transmitter port. The scheme uses at least one pre-charged capacitor, e.g., PMOS capacitor, interacting with the transmitter pad and connected through resistances or otherwise across the differential impedance with a switch. A modified scheme uses first and second parallely connected PMOS capacitors connectable with the transmission pad by switches, which may be NMOS switches. The scheme may be used in a MIPI D-PHY compliant DSI transmitter operating at, for e.g. 800 Mbps, and low signal common-modes. The scheme controls signal transition times of high speed circuitry including transmitters and uses a DATA signal which is already available to the circuitry.

Abstract: The present disclosure describes methods and systems for tiling video or still image data. At least some preferred embodiments include a method for accessing data that includes partitioning a display of graphical data into a plurality of two-dimensional tiles; mapping a two-dimensional tile of the plurality of two-dimensional tiles to a single memory row within a memory; and maintaining the graphical data for the two-dimensional tile in the single memory row.

Abstract: A method for fabricating a CMOS integrated circuit (IC) includes the step of providing a substrate having a semiconductor surface. A gate stack including a metal gate electrode on a metal including high-k dielectric layer is formed on the semiconductor surface. Dry etching is used to pattern the gate stack to define a patterned gate electrode stack having exposed sidewalls of the metal gate electrode. The dry etching forms post etch residuals some of which are deposited on the substrate. The substrate including the patterned gate electrode stack is exposed to a solution cleaning sequence including a first clean step including a first acid and a fluoride for removing at least a portion of the post etch residuals, wherein the first clean step has a high selectivity to avoid etching the exposed sidewalls of the metal gate electrode. A second clean after the first clean consists essentially of a fluoride which removes residual high-k material on the semiconductor surface.

Abstract: An electronic configuration circuit includes a processing circuit (2610) operable for executing instructions and responsive to interrupt requests and operable in a plurality of execution environments (EE) selectively wherein a said execution environment (EE) is activated or suspended, a first configuration register (SCR) coupled to the processing circuit (2610) for identifying the interrupt request as an ordinary interrupt request IRQ when the execution environment (EE) is activated (EE_Active); and a second configuration register (SSM_FIQ_EE_y) for associating an identification of that execution environment (EE) with the same interrupt request, the processing circuit (2610) coupled (5910) to the second configuration register (SSM_FIQ_EE_y) to respond to the same interrupt request as a more urgent type of interrupt request when that execution environment (EE) is suspended (5920).

Abstract: A system comprises a first processor, a second processor coupled to the first processor, an operating system that executes exclusively only on the first processor and not on the second processor, and a middle layer software running on the first processor and that distributes tasks to run on either or both processors. A synchronization unit coupled to the first and second processors also may be provided to synchronize the processors. Further still, a translation lookaside buffer may be included that is shared between the processors. Each entry in the translation lookaside buffer (“TLB”) may include a task identifier to permit the operating system or middle layer software to selectively flush only some of the TLB entries (e.g., the entries pertaining to only one of the processors).

Abstract: A digital system and method of operation is provided in which several processors (440, 450) are connected to a shared memory resource (460). Translation lookaside buffers (TLB) (400, 402) are connected to receive a request address (404a-n) from each respective processor. Each TLB has a set of entries that correspond to pages of address space. Each entry provides a set of task memory attributes (TMA) (412a-n) for the associated page of address space. Task memory attributes are defined by a task control block associated with a currently executing task. For each memory transfer request, the TLB accesses an entry corresponding to the request address and provides a translated physical memory address and a task memory attribute value associated with that requested address space page. Functional circuitry (470) performs pre/post-processing on data that is being transferred between a processor and the memory in accordance with the task memory attribute value provided by the TLB with each memory transfer request.

Abstract: The present invention provides an interconnect structure, a method of manufacture therefore, and a method for manufacturing an integrated circuit including the same. The method for forming the interconnect structure, among other steps, includes subjecting a first portion (510) of a substrate (220) to a first etch process, the first etch process designed to etch at a first entry angle (?1), and subjecting a second portion (610) of the substrate (220) to a second different etch process, the second different etch process designed to etch at a second lesser entry angle (?2).

Abstract: Efficient PAM transmit modulation is provided by a PAM modulator that includes an oscillator (404) that provides a clock signal, CKV, (408). The clock signal 408 and a delayed version (CKV_DLY) 420 of the clock signal are provided to a logic gate (414). The output of logic gate (414) is used as a power amplifier input signal (PA_IN) for radio frequency power amplifier (416). Depending on the relative time delay of the CKV clock signal (408) and the CKV_DLY delayed clock signal (420), the timing and duty cycle of the logic gate (414) duty cycle can be controlled. The duty cycle or pulse-width variation affects the turn-on time of the power amplifier (416); thereby establishing the RF output amplitude.

Abstract: Multiple blanket implantations of one or more p type dopants into a semiconductor substrate are performed to facilitate isolation between nwell regions subsequently formed in the substrate. The blanket implantations are performed through isolation regions in the substrate so that the p type dopants are implanted to depths sufficient to separate the nwell regions. This increased concentration of p type dopants helps to mitigate leakage between the nwell regions as the nwell regions are brought closer together to increase packing densities.

Abstract: A sidewall spacer pullback scheme is implemented in forming a transistor. The scheme, among other things, allows silicide regions of the transistor to be made larger, or rather have a larger surface area. The larger surface area has a lower resistance and thus allows voltages to be applied to the transistor more accurately. The scheme also allows transistors to be made slightly thinner so that the formation of voids in a layer of dielectric material formed over the transistors is mitigated. This mitigates yield loss by facilitating more predictable or otherwise desirable transistor behavior.

Abstract: In a method and system for data retention, a data input is latched by a first latch. A second latch coupled to the first latch receives the data input for retention while the first latch is inoperative in a standby power mode. The first latch receives power from a first power line that is switched off during the standby power mode. The second latch receives power from a second power line. A controller receives a clock input and a retention signal and provides a clock output to the first latch and the second latch. A change in the retention signal is indicative of a transition to the standby power mode. The controller continues to hold the clock output at a predefined voltage level and the second latch continues to receive power from the second power line in the standby power mode, thereby retaining the data input.

Abstract: In an apparatus and method for reducing current leakage in a phase locked loop (PLL), a pair of resistive divider circuit is coupled to receive a pair of differential input signals and provide a pair of differential output signals. A timing control circuit controls a pair of switches, the pair of switches being operable to conduct the pair of differential output signals in response to at least one signal of the pair of differential input signals being present. An operational amplifier (OA) includes a pair of OA input terminals and an OA output terminal. The pair of OA input terminals is coupled to receive the pair of differential output signals conducted by the pair of switches. A feedback circuit is coupled between the OA output terminal and a first one of the pair of OA input terminals. The pair of switches is disabled by the timing control circuit to block a current leakage from the feedback circuit.

Abstract: A method of forming a memory device (e.g., a DRAM) including array and peripheral circuitry. A plurality of undoped polysilicon gates 58 are formed. These gates 58 are classed into three groups; namely, first conductivity type peripheral gates 58p, second conductivity type peripheral gates 58n, and array gates 58a. The array gates 58a and the first conductivity type peripheral gates 58n are masked such that the second conductivity type peripheral gates 58p remain unmasked. A plurality of second conductivity type peripheral transistors can then be formed by doping each of the second conductivity type peripheral gates 58p, while simultaneously doping a first and a second source/drain region 84 adjacent each of the second conductivity type peripheral gates 58p. The second conductivity type peripheral gates 58p are then masked such that the first conductivity type peripheral gates 58n remain unmasked.

Abstract: A method and/or a system of at-speed transition fault testing with low speed scan enable is disclosed. In one embodiment, a digital system includes any number of scan chains. Each scan chain may have any number of scan cells, an at-speed local scan enable signal to control a mode of operation, and any number of last transition generator cells. In addition, each last transition generator cell includes a first flip-flop with an output connected to a second flip-flop input, an input multiplexer to apply any one of a first flip-flop output data and an OR gate having a first flip-flop input based on a state of the at-speed local scan enable signal, and an OR gate having a first flip-flop output and the global scan enable signal as inputs to generate the at-speed local scan enable signal based on a state of the global scan enable signal.

Abstract: The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well (240) within a substrate (210) and forming a suppression implant (420) within the substrate (210). The method for manufacturing the zener diode may further include forming a cathode (620) and an anode (520) within the substrate (210), wherein the suppression implant (420) is located proximate the doped well (240) and configured to reduce threading dislocations.

Abstract: An amplifier comprising an analog amplifier which outputs a first current and a second current. The amplifier also comprises a first digital amplifier coupled to the analog amplifier, the first digital amplifier amplifies a modified version of the first current to produce a third current. The amplifier also comprises a second digital amplifier coupled to the analog amplifier, the second digital amplifier amplifies a modified version of the second current to produce a fourth current. The amplifier also includes connections configured to provide the first, second, third and fourth currents through a load.

Abstract: Method for dynamically compensating probe tip misalignment with a semiconductor wafer. The wafer is located on a handler and the wafer is adjusted to a first temperature. Probe tips of an inspection system are moved to a first position centered above pads of a test module on the wafer. The first position is recorded in a memory of the inspection system at the first temperature. The wafer and the probe tips are adjusted to a second temperature while the wafer remains in the inspection system. A second position of the probe tips is recorded in the memory while the probe tips and the wafer are equilibrated at the second temperature. A difference between the first and second position is calculated. Relative positions of the probe tips or the wafer is compensated based on the calculated difference, such that the probe tips are re-centered above the pads at the second temperature.

Abstract: One aspect of the invention relates to a method for accessing a memory device. One embodiment relates to a method for accessing a memory device. In the method during a read operation, one data value is provided on a local IO line while complimentary local IO line that is associated with the local IO line is inactivated. During a write operation, another data value is provided on the local IO line and a complimentary data value is provided on the complimentary local IO line. Other systems and methods are also disclosed.