Abstract: A processor including a virtual memory paging mechanism. The virtual memory paging mechanism enables an operating system operating on the processor to use pages of a first size and a second size, the second size being greater than the first size. The mechanism further enables the operating system to use superpages including two or more contiguous pages of the first size. The size of a superpage is less than the second size. The processor further includes a page table having a separate entry for each of the pages included in each superpage. The operating system accesses each superpage using a single virtual address. The mechanism interprets a single entry in a translation lookaside buffer TLB as referring to a region of memory comprising a set of pages that correspond to a superpage in response to detecting a superpage enable indicator associated with the entry in the TLB is asserted.

Abstract: A method for fabricating a MOSFET (e.g., a PMOS FET) includes providing a semiconductor substrate having surface characterized by a (110) surface orientation or (110) sidewall surfaces, forming a gate structure on the surface, and forming a source extension and a drain extension in the semiconductor substrate asymmetrically positioned with respect to the gate structure. An ion implantation process is performed at a non-zero tilt angle. At least one spacer and the gate electrode mask a portion of the surface during the ion implantation process such that the source extension and drain extension are asymmetrically positioned with respect to the gate structure by an asymmetry measure.

Abstract: A system and method are disclosed for correlating instruction sequences. A plurality of instructions is processed to parse a first sequence of instructions comprising a first area of interest. A first instruction sequence pattern is then generated from the first sequence of instructions. Pattern matching operations are performed with the first instruction sequence pattern. A second sequence of instructions are parsed, comprising a second instruction sequence pattern and a second address of interest that is a substantially equivalent match to the first instruction sequence pattern.

Abstract: A first address is received and is used to determine a first address range. The first address range includes a second address range and a third address range. If the first address is in the second address range, a fourth address range is determined. The fourth address range is different from the first address range. Information is retrieved from a memory in response to determining that a second address is in the first address range or the fourth address range. If the first address is in the third address range, a fifth address range is determined. The fifth address range is different from the first address range. Other information is retrieved from the memory in response to determining the second address is in the first address range or the fifth address range.

Abstract: A method of manufacturing includes connecting a first end of a first through-silicon-via to a first die seal proximate a first side of a first semiconductor chip. A second end of the first thu-silicon-via is connected to a second die seal proximate a second side of the first semiconductor chip opposite the first side.

Abstract: A device and method for transferring data is disclosed that facilitates data transfers between devices having different clock domains. The data transfer from one device to another occurs through a First In First Out memory (FIFO). The relative number of FIFO access cycles to the FIFO is controlled to maintain a desired FIFO fullness. Setting the desired FIFO fullness to a desired value allows control of data transfer latency between devices.

Abstract: A shader pipe texture filter utilizes a level one cache system as a primary method of storage but with the ability to have the level one cache system read and write to a level two cache system when necessary. The level one cache system communicates with the level two cache system via a wide channel memory bus. In addition, the level one cache system can be configured to support dual shader pipe texture filters while maintaining access to the level two cache system. A method utilizing a level one cache system as a primary method of storage with the ability to have the level one cache system read and write a level two cache system when necessary is also presented. In addition, level one cache systems can allocate a defined area of memory to be sharable amongst other resources.

Abstract: Apparatus and methods for a bilinear filter system comprising a pre-formatter module, a bilinear module, an accumulator module, and a format module. The pre-formatter module is configured to receive texel data and convert it to a normalized fixed point format. The bilinear module is dynamically reconfigurable to perform an interpolation or an extended precision interpolation on the normalized fixed point texel data from the pre-formatter module and generate re-normalized floating point texel data. The interpolator analyzes the exponent range of fixed point texel data from the pre-formatter module to determine if an extended precision calculation is appropriate. The accumulator module is configured to accumulate floating point texel data from the bilinear module to achieve the desired level of bilinear, trilinear, and anisotropic filtering. The format module is configured to convert texel data from the accumulator module into a standard floating point representation.

Abstract: Techniques are disclosed relating to reducing wander created by AC couplers. In one embodiment, an integrated circuit is disclosed that includes an AC coupler and a DC-level shifter. The AC coupler is configured to receive a differential input signal at first and second nodes, and to shift a common-mode voltage of the differential input signal. The DC-level shifter is coupled to the first and second nodes, and configured to reduce wander of the AC coupler. In various embodiments, the DC-level shifter is configured to supply a differential reference signal to the AC coupler, and to create the differential reference signal from the differential input signal at the first and second nodes by changing a common-mode voltage of the differential input signal.

Abstract: In a memory cell, the drive current capabilities of the transistors may be adjusted by locally providing an increased gate dielectric thickness and/or gate length of one or more of the transistors of the memory cell. That is, the gate length and/or the gate dielectric thickness may vary along the transistor width direction, thereby providing an efficient mechanism for adjusting the effective drive current capability while at the same time allowing the usage of a simplified geometry of the active region, which may result in enhanced production yield due to enhanced process uniformity. In particular, the probability of creating short circuits caused by nickel silicide portions may be reduced.

Abstract: Systems and methods for pipelined synchronization in a write-combining cache are described herein. An embodiment to transmit data to a memory to enable pipelined synchronization of a cache includes obtaining a plurality of synchronization events for transactions with said memory, calculating one or more matches between said events and said data stored in one or more cache-lines of said cache, storing event time stamps of events associated with said matches, generating one or more priority values based on said event time stamps, concurrently transmitting said data to said memory based on said priority values.

Abstract: Systems and methods for synchronizing thread wavefronts and associated events are disclosed. According to an embodiment, a method for synchronizing one or more thread wavefronts and associated events includes inserting a first event associated with a first data output from a first thread wavefront into an event synchronizer. The event synchronizer is configured to release the first event before releasing events inserted subsequent to the first event. The method further includes releasing the first event from the event synchronizer after the first data is stored in the memory. Corresponding system and computer readable medium embodiments are also disclosed.

Abstract: A switching device and methods of making and operating the same are provided. In one aspect, a method of operating a switching device is provided that includes providing a MOS transistor that has a gate, a source region, a drain region and a body region. A bipolar transistor is provided that has a collector, a base and an emitter. The body region of the MOS transistor serves as the base of the bipolar transistor and the drain region of the MOS transistor serves as the collector of the bipolar transistor. Activation of the MOS transistor causes the bipolar transistor to turn on. The MOS transistor is activated to turn on the bipolar transistor and the bipolar transistor delivers current to the source region.

Abstract: A system and method for selectively transmitting probe commands and reducing network traffic. Directory entries are maintained to filter probe command and response traffic for certain coherent transactions. Rather than storing directory entries in a dedicated directory storage, directory entries may be stored in designated locations of a shared cache memory subsystem, such as an L3 cache. Directory entries are stored within the shared cache memory subsystem to provide indications of lines (or blocks) that may be cached in exclusive-modified, owned, shared, shared-one, or invalid coherency states. The absence of a directory entry for a particular line may imply that the line is not cached anywhere in a computing system.

Abstract: A method includes providing a set of initial characteristic values associated with the semiconductor device. A first fabrication process is performed on the semiconductor device. Fabrication data associated with the first fabrication process is collected. At least one of the initial characteristic values is replaced with the fabrication data collected for the first fabrication process to generate a first modified set of characteristic values. A first value for at least one electrical characteristic of the semiconductor device is predicted based on the modified set of characteristic values. A system includes a first process tool, a first data collection unit, and a prediction unit. The first process tool is configured to perform a first fabrication process on the semiconductor device. The first data collection unit is configured to collect fabrication data associated with the first fabrication process.

Abstract: By recessing portions of the drain and source areas on the basis of a spacer structure, the subsequent implantation process for forming the deep drain and source regions may result in a moderately high dopant concentration extending down to the buried insulating layer of an SOI transistor. Furthermore, the spacer structure maintains a significant amount of a strained semiconductor alloy with its original thickness, thereby providing an efficient strain-inducing mechanism. By using sophisticated anneal techniques, undue lateral diffusion may be avoided, thereby allowing a reduction of the lateral width of the respective spacers and thus a reduction of the length of the transistor devices. Hence, enhanced charge carrier mobility in combination with reduced junction capacitance may be accomplished on the basis of reduced lateral dimensions.

Abstract: Described are a video graphics system, graphics processor, and methods for rendering three-dimensional objects. A buffer is partitioned into tiles of pixels. Each pixel of each tile includes at least one sample. A primitive is received and determined to cover fully one of the tiles. A section of the primitive that maps to the fully covered tile is tested to determine if every sample within the fully covered tile is to undergo the same stencil operation. The stencil operation is performed on the fully covered tile in the buffer if every sample within the fully covered tile is to undergo the same stencil operation.

Abstract: By creating a temperature profile across a polishing pad, a respective temperature profile may be obtained in a substrate to be polished, which may result in a respective varying removal rate across the substrate for a chemically reactive slurry material or for an electro-chemically activated polishing process. Hence, highly sensitive materials, such as material comprising low-k dielectrics, may be efficiently polished with a high degree of controllability.

Abstract: In sophisticated semiconductor devices, a strain-inducing semiconductor alloy may be positioned close to the channel region by forming cavities on the basis of a wet chemical etch process, which may have an anisotropic etch behavior with respect to different crystallographic orientations. In one embodiment, TMAH may be used which exhibits, in addition to the anisotropic etch behavior, a high etch selectivity with respect to silicon dioxide, thereby enabling extremely thin etch stop layers which additionally provide the possibility of further reducing the offset from the channel region while not unduly contributing to overall process variability.

Abstract: Described are a video graphics system, graphics processor, and methods for rendering three-dimensional objects. A buffer is partitioned into tiles of pixels. Each pixel of each tile includes at least one sample. A primitive is received and determined to fully cover one of the tiles of the buffer. A section of the primitive that maps to the fully covered tile is tested to determine whether that section of the primitive may be drawn in its entirety. A value is stored in the buffer for the fully covered tile in response to determining that the section of the primitive may be drawn in its entirety. The value indicating that every sample of the fully covered tile has a depth value determined by the primitive.