Patents Assigned to Applied Material
  • Publication number: 20220028795
    Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.
    Type: Application
    Filed: July 22, 2021
    Publication date: January 27, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Wenjing Xu, Feng Chen, Tae Hong Ha, Xianmin Tang, Lu Chen, Zhiyuan Wu
  • Publication number: 20220028710
    Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures defined through the first lid plate. The systems may include a plurality of isolators. An isolator of the plurality of isolators may be positioned between each lid stack of the plurality of lid stacks and a corresponding aperture of the plurality of apertures defined through the first lid plate. The systems may include a plurality of dielectric plates. A dielectric plate of the plurality of dielectric plates may be seated on each isolator of the plurality of isolators.
    Type: Application
    Filed: July 21, 2020
    Publication date: January 27, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Anantha K. Subramani, Yang Guo, Seyyed Abdolreza Fazeli, Nitin Pathak, Badri N. Ramamurthi, Kallol Bera, Xiaopu Li, Philip A. Kraus, Swaminathan T. Srinivasan
  • Patent number: 11232561
    Abstract: An imaging system includes a microscope to generate magnified images of regions of interest of a tissue sample, a camera to capture and store the magnified images, and a controller. The controller is configured to, for each magnification level in a sequence of increasing magnification levels, image one or more regions of interest of the tissue sample at the current magnification level. For each region of interest, data is generated defining one or more refined regions of interest based on the magnified image of the region of interest of the tissue sample at the current magnification level. Each refined region of interest corresponds to a proper subset of the tissue sample, and the refined regions of interest of the tissue sample provide the regions of interest to be imaged at a next magnification level from the sequence of increasing magnification levels.
    Type: Grant
    Filed: January 17, 2020
    Date of Patent: January 25, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Parijat P. Prabhudesai, Ganesh Kumar Mohanur Raghunathan, Aditya Sista, Sumit Kumar Jha, Narasimha Murthy Chandan
  • Patent number: 11232550
    Abstract: There is provided a system and method of generating a training set for training a Deep Neural Network usable for examination of a specimen. The method includes: for each given training image in a group: i) generating a first batch of training patches, including cropping the given training image into a first plurality of original patches; and augmenting at least part of the first plurality of original patches in order to simulate variations caused by a physical process of the specimen; and ii) generating a second batch of training patches, including: shifting the plurality of first positions on the given training image to obtain a second plurality of original patches, and repeating the augmenting to the second plurality of original patches to generate a second plurality of augmented patches; and including at least the first second batches of training patches corresponding to each given training image in the training set.
    Type: Grant
    Filed: June 29, 2020
    Date of Patent: January 25, 2022
    Assignee: Applied Materials Israel Ltd.
    Inventors: Elad Ben Baruch, Shalom Elkayam, Shaul Cohen, Tal Ben-Shlomo
  • Patent number: 11230793
    Abstract: Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.
    Type: Grant
    Filed: October 7, 2020
    Date of Patent: January 25, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Paul R. McHugh, Gregory J. Wilson
  • Patent number: 11232925
    Abstract: An IHC ion source that employs a negatively biased cathode and one or more side electrodes is disclosed. The one or more side electrodes are left electrically unconnected in certain embodiments and are grounded in other embodiments. The floating side electrodes may be beneficial in the formation of certain species. In certain embodiments, a relay is used to allow the side electrodes to be easily switched between these two modes. By changing the configuration of the side electrodes, beam current can be optimized for different species. For example, certain species, such as arsenic, may be optimized when the side electrodes are at the same voltage as the chamber. Other species, such as boron, may be optimized when the side electrodes are left floating relative to the chamber. In certain embodiments, a controller is in communication with the relay so as to control which mode is used, based on the desired feed gas.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: January 25, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Shengwu Chang, Frank Sinclair, Michael St. Peter
  • Publication number: 20220020599
    Abstract: Exemplary processing methods may include depositing a boron-containing material or a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include etching portions of the boron-containing material or the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate. The methods may also include removing remaining portions of the boron-containing material or the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor.
    Type: Application
    Filed: July 18, 2021
    Publication date: January 20, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Takehito Koshizawa, Karthik Janakiraman, Rui Cheng, Krishna Nittala, Menghui Li, Ming-Yuan Chuang, Susumu Shinohara, Juan Guo, Xiawan Yang, Russell Chin Yee Teo, Zihui Li, Chia-Ling Kao, Qu Jin, Anchuan Wang
  • Publication number: 20220020612
    Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The processing systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The processing systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The processing systems may include a faceplate heater seated on the faceplate. The faceplate heater may include a first heater coil extending proximate a first area of the faceplate. The faceplate heater may include a second heater coil extending proximate a second area of the faceplate.
    Type: Application
    Filed: July 19, 2020
    Publication date: January 20, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Sungwon Ha, Runyun Pan
  • Publication number: 20220018024
    Abstract: Exemplary semiconductor processing systems may include a pumping system, a chamber body that defines a processing region, and a pumping liner disposed within the processing region. The pumping liner may define an annular member characterized by a wall that defines an exhaust aperture coupled to the pumping system. The annular member may be characterized by an inner wall that defines a plurality of apertures distributed circumferentially along the inner wall. A plenum may be defined in the annular member between interior surfaces of the walls. A divider may be disposed within the plenum, where the divider separates the plenum into a first plenum chamber and a second plenum chamber, wherein the first plenum chamber is fluidly accessible from the apertures defined through the inner wall, and wherein the divider defines at least one aperture providing fluid access between the first plenum chamber and the second plenum chamber.
    Type: Application
    Filed: July 19, 2020
    Publication date: January 20, 2022
    Applicant: Applied Materials, Inc.
    Inventor: Mingle Tong
  • Publication number: 20220020583
    Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by less than or about 3% hydrogen incorporation.
    Type: Application
    Filed: July 19, 2020
    Publication date: January 20, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Rui Cheng, Diwakar Kedlaya, Karthik Janakiraman, Gautam K. Hemani, Krishna Nittala, Alicia J. Lustgraaf, Zubin Huang, Brett Spaulding, Shashank Sharma, Kelvin Chan
  • Publication number: 20220020557
    Abstract: An ion beam processing system including a plasma chamber, a plasma plate, disposed alongside the plasma chamber, the plasma plate defining a first extraction aperture, a beam blocker, disposed within the plasma chamber and facing the extraction aperture, a blocker electrode, disposed on a surface of the beam blocker outside of the plasma chamber, and an extraction electrode disposed on a surface of the plasma plate outside of the plasma chamber.
    Type: Application
    Filed: July 15, 2020
    Publication date: January 20, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Jay R. Wallace, Costel Biloiu, Kevin M. Daniels
  • Publication number: 20220020594
    Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The semiconductor substrate may define a feature within the semiconductor substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. A bias power may be applied to the substrate support from a bias power source. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.
    Type: Application
    Filed: July 19, 2020
    Publication date: January 20, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Shishi Jiang, Praket Prakash Jha, Abhijit Basu Mallick
  • Publication number: 20220020615
    Abstract: Exemplary substrate processing systems may include a plurality of processing regions. The systems may include a transfer region housing defining a transfer region fluidly coupled with the plurality of processing regions. The systems may include a plurality of substrate supports. Each substrate support of the plurality of substrate supports may be vertically translatable between the transfer region and an associated processing region of the plurality of processing regions. The systems may include a transfer apparatus including a rotatable shaft extending through the transfer region housing. The transfer apparatus may also include an end effector coupled with the rotatable shaft. The systems may include an exhaust foreline including a plurality of foreline tails. Each foreline tail of the plurality of foreline tails may be fluidly coupled with a separate processing region of the plurality of processing regions. The systems may include a plurality of throttle valves.
    Type: Application
    Filed: July 19, 2020
    Publication date: January 20, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Nitin Pathak, Vinay K. Prabhakar, Badri N. Ramamurthi, Viren Kalsekar, Juan Carlos Rocha-Alvarez
  • Publication number: 20220020570
    Abstract: Exemplary semiconductor processing systems may include a processing chamber including a lid stack having an output manifold. The systems may include a gas panel. The systems may include an input manifold. The input manifold may fluidly couple the gas panel with the output manifold of the processing chamber. A delivery line may extend from the input manifold to the output manifold. The systems may include a first transmission line extending from a first set of precursor sources of the gas panel to the delivery line. The systems may include a second transmission line extending from a second set of precursor sources of the gas panel to the delivery line. The second transmission line may be switchably coupled between the delivery line and an exhaust of the semiconductor processing system.
    Type: Application
    Filed: July 19, 2020
    Publication date: January 20, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Sai Susmita Addepalli, Yue Chen, Abhigyan Keshri, Qiang Ma, Zhijun Jiang, Shailendra Srivastava, Daemian Raj Benjamin Raj, Ganesh Balasubramanian
  • Publication number: 20220020593
    Abstract: Disclosed are approaches for forming a semiconductor device. In some embodiments, a method may include providing a patterned hardmask over a substrate, and providing, from an ion source, a plasma treatment to a first section of the patterned hardmask, wherein a second section of the patterned hardmask does not receive the plasma treatment. The method may further include etching the substrate to form a plurality of fins in the substrate, wherein the first section of the patterned hardmask is etched faster than the second section of the patterned hardmask.
    Type: Application
    Filed: July 14, 2020
    Publication date: January 20, 2022
    Applicant: Applied Materials, Inc.
    Inventor: Min Gyu Sung
  • Publication number: 20220020589
    Abstract: Exemplary methods of semiconductor processing may include forming a first plasma of a silicon-containing precursor and an oxygen-containing precursor within a processing region of a semiconductor processing chamber. The methods may also include depositing a coating from first effluents of the first plasma on surfaces defining the processing region to a target thickness greater than or about 0.5 ?m. Forming the first plasma may occur at a first power greater than or about 300 W. The surfaces defining the processing region may include a surface of a faceplate that faces the processing region.
    Type: Application
    Filed: July 19, 2020
    Publication date: January 20, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Lu Xu, Ratsamee Limdulpaiboon, Kwangduk Douglas Lee
  • Patent number: 11225027
    Abstract: An additive manufacturing apparatus including a platform and a dispenser configured to deliver successive layers of feed material onto the platform. One or more light sources generate multiple light beams to selectively fuse feed material in a layer on the platform and multiple optical assemblies receive the multiple light beams, where each respective optical assembly transmits a respective light beam along a respective optical path through the optical assembly. Each light beam is directed to a scan spot on the layer of feed material on the platform to scan the light beam to sweep the scan spot along a controllable path across the layer of feed material on the platform. An optical multiplexer selectively transmits the return light emitted or reflected from the respective scan spot from a respective optical path of a selected respective optical assembly of the multiple optical assemblies to the measurement device.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: January 18, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Kamala Chakravarthy Raghavan, Jeffrey L. Franklin
  • Patent number: 11227746
    Abstract: Embodiments described herein provide a backside gas delivery assembly that prevents inert gas from forming parasitic plasma. The backside gas delivery assembly includes a first gas channel disposed in a stem of a substrate support assembly. The substrate support assembly includes a substrate support having a second gas channel extending from the first gas channel. The backside gas delivery assembly further includes a porous plug disposed within the first gas channel positioned at an interface of the stem and the substrate support, a gas source connected to the first gas channel configured to deliver an inert gas to a backside surface of a substrate disposed on an upper surface of the substrate support, and a gas tube in the first gas channel extending to the porous plug positioned at the interface of the stem and the substrate support.
    Type: Grant
    Filed: February 20, 2019
    Date of Patent: January 18, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Luke Bonecutter, Abhijit Kangude
  • Patent number: 11226234
    Abstract: Implementations disclosed describe a system comprising a first optical device to receive an input beam of light, the input beam having a plurality of spectral components of light, and cause the input beam to disperse into a plurality of spectral beams, wherein each of the plurality of spectral beams corresponds to one of the plurality of spectral components and propagates along a spatial path that is different from spatial paths of other spectral beams, and a second optical device to collect a portion of each of the spectral beams, wherein the collected portion depends on the spatial path of the respective spectral beam, and form an output beam of light from the collected portion of each of the spectral beams, wherein a spectral profile of the output beam is different from a spectral profile of the input beam of light.
    Type: Grant
    Filed: January 22, 2020
    Date of Patent: January 18, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Guoheng Zhao, Edward W. Budiarto, Todd J. Egan
  • Patent number: D941787
    Type: Grant
    Filed: March 3, 2020
    Date of Patent: January 25, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Sultan Malik, Srinivas D. Nemani, Adib M. Khan, Qiwei Liang