Patents Assigned to Applied Material
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Publication number: 20220071037Abstract: Process assemblies and cable management assemblies for managing cables in tight envelopes. A processing assembly includes a top chamber having at least one substrate support, a support shaft, a robot spindle assembly, a stator and a cable management system. The cable management system includes an inner trough assembly and an outer trough assembly configured to move relative to one another, and a plurality of chain links configured to house at least one cable for delivering power to the process assembly.Type: ApplicationFiled: September 1, 2020Publication date: March 3, 2022Applicant: Applied Materials, Inc.Inventors: Akshay Gunaji, Uday Pai, Timothy J. Roggenbuck, Sanjeev Baluja, Kalesh Panchaxari Karadi, Tejas Ulavi
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Publication number: 20220068640Abstract: Examples of the present technology include semiconductor processing methods to form diffusion barriers for germanium in a semiconductor structure. The methods may include forming a semiconductor layer stack from pairs of Si-and-SiGe layers. The Si-and-SiGe layer pairs may be formed by forming a silicon layer, and then forming the germanium barrier layer of the silicon layer. In some embodiments, the germanium-barrier layer may be less than or about 20 ?. A silicon-germanium layer may be formed on the germanium-barrier layer to complete the formation of the Si-and-SiGe layer pair. In some embodiments, the silicon layer may be an amorphous silicon layer, and the SiGe layer may be characterized by greater than or about 5 atom % germanium. Examples of the present technology also include semiconductor structures that include a silicon-germanium layer, a germanium-barrier layer, and a silicon layer.Type: ApplicationFiled: August 27, 2020Publication date: March 3, 2022Applicant: Applied Materials, Inc.Inventors: Huiyuan Wang, Susmit Singha Roy, Takehito Koshizawa, Bo Qi, Abhijit Basu Mallick, Nitin K. Ingle
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Publication number: 20220068917Abstract: Logic devices and methods of forming logic devices are described. An epitaxial channel is formed orthogonally to a horizontal plane of a substrate surface with a stack or horizontal transistors on the substrate surface. The first horizontal transistor having a first length and a first step, the second horizontal transistor having a second length and a second step and a third horizontal transistor has a third length and a third step. Each of the horizontal transistors is separated from adjacent layers by a horizontal isolation layer.Type: ApplicationFiled: October 13, 2021Publication date: March 3, 2022Applicant: Applied Materials, Inc.Inventors: Suketu Arun Parikh, Sanjay Natarajan
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Publication number: 20220068709Abstract: Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.Type: ApplicationFiled: August 25, 2020Publication date: March 3, 2022Applicant: Applied Materials, Inc.Inventors: Feihu Wang, Joung Joo Lee, Xi Cen, Zhibo Yuan, Wei Lei, Kai Wu, Chunming Zhou, Zhebo Chen
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Publication number: 20220064784Abstract: Methods for selective deposition are described herein. Further, methods for improving selectivity comprising an ammonia plasma pre-clean process are also described. In some embodiments, a silyl amine is used to selectively form a surfactant layer on a dielectric surface. A ruthenium film may then be selectively deposited on a conductive surface. In some embodiments, the ammonia plasma removes oxide contaminations from conductive surfaces without adversely affecting the dielectric surface.Type: ApplicationFiled: September 3, 2020Publication date: March 3, 2022Applicant: Applied Materials, Inc.Inventors: Wenjing Xu, Gang Shen, Yufei Hu, Feng Chen, Tae Hong Ha
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Patent number: 11264263Abstract: A substrate rotator configured to rotate one or more substrates includes a body, a body actuator coupled to the body and configured to rotate the body, and a first and second gripper coupled to the body. A substrate edge metrology system that measures side chips or other defects on all sides of the substrate is also described. The metrology system includes two metrology stations and the substrate rotator. Methods for measuring side chips or other defects on a substrate are also provided. The method includes performing metrology on a first set of sides of the first substrate, rotating the first substrate by a first angle, and performing metrology on the second set of sides of the first substrate.Type: GrantFiled: December 12, 2019Date of Patent: March 1, 2022Assignee: Applied Materials, Inc.Inventors: Asaf Schlezinger, Markus J. Stopper
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Patent number: 11264252Abstract: Implementations described herein provide a chamber lid assembly. In one embodiment, a chamber lid assembly includes a heater embedded in a dielectric body forming a boundary of a processing chamber, wherein the heater has one or more heating zones that are independently controlled.Type: GrantFiled: September 5, 2019Date of Patent: March 1, 2022Assignee: Applied Materials, Inc.Inventors: Michael D. Willwerth, Jeffrey Ludwig, Benjamin Schwarz, Roberto Cesar Cotlear
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Patent number: 11262662Abstract: Implementations described herein relate to a platform apparatus for post exposure processing. In one implementation, a platform apparatus includes a plumbing module and a process module. The process module further includes a central region having a robot disposed therein, and a plurality of process stations disposed about the central region and sharing the plumbing module. Each process station includes a process chamber and a post process chamber in a stacked arrangement. The process chamber includes a chamber body defining a process volume, a door coupled to the chamber body, a first electrode coupled to the door, and a power source communicatively coupled to the first electrode.Type: GrantFiled: October 2, 2020Date of Patent: March 1, 2022Assignee: Applied Materials, Inc.Inventors: Viachslav Babayan, Ludovic Godet, Kyle M. Hanson, Robert B. Moore
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Patent number: 11260500Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.Type: GrantFiled: September 3, 2020Date of Patent: March 1, 2022Assignee: Applied Materials, Inc.Inventors: Hung Chih Chen, Steven M. Zuniga, Charles C. Garretson, Douglas R. McAllister, Jian Lin, Stacy Meyer, Sidney P. Huey, Jeonghoon Oh, Trung T. Doan, Jeffrey P. Schmidt, Martin S. Wohlert, Kerry F. Hughes, James C. Wang, Danny Cam Toan Lu, Romain Beau De Lamenie, Venkata R. Balagani, Aden Martin Allen, Michael Jon Fong
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Patent number: 11265971Abstract: A substrate support assembly comprises a plurality of zones, a chuck comprising a ceramic body, and an additional assembly bonded to a lower surface of the chuck. The additional assembly comprises a second body and a plurality of temperature sensors disposed in or on the second body, wherein each zone of the plurality of zones includes at least one of the plurality of temperature sensors. A plurality of spatially tunable heating elements are disposed a) in or on the ceramic body or b) in or on the second body.Type: GrantFiled: January 24, 2020Date of Patent: March 1, 2022Assignee: Applied Materials, Inc.Inventor: Vijay D. Parkhe
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Patent number: 11264258Abstract: Buffer chamber including robots, a carousel and at least one heating module for use with a batch processing chamber are described. Robot configurations for rapid and repeatable movement of wafers into and out of the buffer chamber and cluster tools incorporating the buffer chambers and robots are described.Type: GrantFiled: May 19, 2020Date of Patent: March 1, 2022Assignee: Applied Materials, Inc.Inventors: William T. Weaver, Jason M. Schaller, Robert Brent Vopat, David Blahnik, Benjamin B. Riordon, Paul E. Pergande
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Patent number: 11261538Abstract: The present invention provides methods and apparatus for processing semiconductor substrates in an epitaxy chamber configured to map a temperature profile for both substrates and interior chamber components. In one embodiment, the semiconductor processing chamber has a body having ceiling and a lower portion defining an interior volume. A substrate support is disposed in the interior volume. A mounting plate is coupled to the ceiling outside the interior volume. A movement assembly is coupled to the mounting plate. A sensor is coupled to the movement assembly and moveable relative to the ceiling. The sensor is configured to detect a temperature location in the interior volume.Type: GrantFiled: September 21, 2020Date of Patent: March 1, 2022Assignee: Applied Materials, Inc.Inventors: Ala Moradian, Zuoming Zhu, Patricia M. Liu, Shu-Kwan Lau, Flora Fong-Song Chang, Enle Choo, Zhiyuan Ye
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Patent number: 11263741Abstract: Implementations of the disclosure provide methods for generating an in-die reference for die-to-die defect detection techniques. The inspection methods using in-die reference comprise finding similar blocks of a lithographic mask, the similar blocks are defined by similar CAD information. A comparison distance is selected based on (i) areas of the similar blocks and (ii) spatial relationships between the similar blocks. The similar blocks are aggregated, based on the comparison distance, to provide multiple aggregated areas; and comparable regions of the lithographic mask are defined based on the multiple aggregate blocks. Images of at least some of the comparable regions of the lithographic mask are acquired using an inspection module. The acquired images are compared.Type: GrantFiled: January 24, 2020Date of Patent: March 1, 2022Assignee: Applied Materials Israel Ltd.Inventors: Boaz Cohen, Gadi Greenberg, Sivan Lifschitz, Shay Attal, Oded O. Dassa, Ziv Parizat
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Patent number: 11264203Abstract: A method, a non-transitory computer readable medium and a system for reducing a temperature difference between a sample and a chuck of an electron beam tool. The method may include determining a target temperature of samples located at the load port of the electron beam tool; setting a temperature of the samples, located at the load port, to the target temperature; moving the sample from the load port to the chuck, the chuck is located within a vacuum chamber, the sample belongs to the samples; and positioning the sample on the chuck, wherein when positioned on the chuck, a temperature of the sample substantially equals a temperature of the chuck.Type: GrantFiled: August 17, 2020Date of Patent: March 1, 2022Assignee: Applied Materials Israel Ltd.Inventors: Genadi Gabi Brontvein, Avraham Aboody
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Patent number: 11264213Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.Type: GrantFiled: July 15, 2019Date of Patent: March 1, 2022Assignee: Applied Materials, Inc.Inventors: Qiwei Liang, Xinglong Chen, Kien Chuc, Dmitry Lubomirsky, Soonam Park, Jang-Gyoo Yang, Shankar Venkataraman, Toan Tran, Kimberly Hinckley, Saurabh Garg
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Patent number: 11261533Abstract: The present disclosure generally relates to methods of electro-depositing a crystalline layer of pure aluminum onto the surface of an aluminum alloy article. The methods may include positioning the article and an electrode in an electro-deposition solution. The electro-deposition solution includes one or more of an aluminum halide, an organic chloride salt, an aluminum reducing agent, a solvent such as a nitrile compound, and an alkali metal halide. The solution is blanketed with an inert gas, agitated, and a crystalline layer of aluminum is deposited on the article by applying a bias voltage to the article and the electrode.Type: GrantFiled: January 30, 2018Date of Patent: March 1, 2022Assignee: Applied Materials, Inc.Inventors: David W. Groechel, Gang Peng, Robert Mikkola
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Patent number: 11260498Abstract: Embodiments of the present invention provide a polishing ring assembly suitable for polishing an electrostatic chuck and method of using the same. In one embodiment, the polishing ring assembly has a retaining ring assembly and an electrostatic chuck fixture. The retaining ring assembly includes an inner diameter and a top surface, a plurality of outer drive rings wherein the plurality of outer drive rings are placed on the top surface of the ceramic retaining ring. The electrostatic chuck fixture includes an electrostatic chuck drive plate adjacent to the inner diameter of in the ceramic retaining ring. The electrostatic chuck drive plate has a lock to secure retaining ring assembly with the electrostatic chuck fixture without transferring the weight from one assembly over to the other through the locking mechanism.Type: GrantFiled: July 25, 2014Date of Patent: March 1, 2022Assignee: Applied Materials, Inc.Inventors: William Ming-ye Lu, Wendell Glen Boyd, Jr., Stacy Meyer
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Patent number: 11265085Abstract: There may be provided detection circuit that may include (i) a photodiode that may be configured to convert radiation to a photodiode electrical signal; (ii) a photodiode bias circuit that may be configured to bias the photodiode, wherein the photodiode bias circuit may include a photodiode bias voltage supply and a photodiode bias capacitor; and (iii) a differential transimpedance amplifier that may be configured to amplify the photodiode electrical signal to provide a differential voltage. The differential transimpedance amplifier may include an amplification circuit and an additional circuit, wherein the amplification circuit may include a positive input port, a negative input port, a positive output port, a negative output port and a common mode input port. The photodiode bias voltage supply may be a floating voltage supply.Type: GrantFiled: July 29, 2019Date of Patent: March 1, 2022Assignee: Applied Materials Israel Ltd.Inventor: Pavel Margulis
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Patent number: 11262250Abstract: Implementations described herein generally relate to semiconductor manufacturing, and more specifically to a temperature measurement device. In one implementation, the temperature measurement device includes a substrate and a stack of metal layers coupled to the substrate. Each metal layer of the stack of metal layers extends continuously uninterrupted from edge to edge of the substrate. The first metal layer has a lower electrical resistivity than the second metal layers. The electrical resistivity of the stack is based on the electrical resistivity of the first metal layer, which is temperature dependent. Utilizing a known relationship between temperature measurements and resistivity measurements, the temperature measurement device can measure and store temperature information in various substrate processing processes.Type: GrantFiled: February 8, 2019Date of Patent: March 1, 2022Assignee: Applied Materials, Inc.Inventor: Heiko Weber
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Patent number: 11264198Abstract: An objective lens arrangement that may include a magnetic lens and an electrostatic lens. The magnetic lens may include one or more coils, an upper polepiece and a lower polepiece. The electrostatic lens may include an upper electrode, an internal lower electrode and an external lower electrode. A majority of the internal lower electrode may be surrounded by a majority of the external lower electrode. The upper electrode, the internal lower electrode, and the external lower electrode are arranged in a coaxial relationship along an optical axis of the objective lens arrangement. An area of a bottom aperture of the external lower electrode may not exceed an area of a bottom aperture of the internal lower electrode.Type: GrantFiled: October 15, 2018Date of Patent: March 1, 2022Assignee: Applied Materials Israel Ltd.Inventors: Igor Petrov, Zvika Rosenberg, Arie Bader