Patents Assigned to Applied Material
  • Patent number: 11043415
    Abstract: In one implementation, a method of forming a cobalt layer on a substrate is provided. The method comprises forming a barrier and/or liner layer on a substrate having a feature definition formed in a first surface of the substrate, wherein the barrier and/or liner layer is formed on a sidewall and bottom surface of the feature definition. The method further comprises exposing the substrate to a ruthenium precursor to form a ruthenium-containing layer on the barrier and/or liner layer. The method further comprises exposing the substrate to a cobalt precursor to form a cobalt seed layer atop the ruthenium-containing layer. The method further comprises forming a bulk cobalt layer on the cobalt seed layer to fill the feature definition.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: June 22, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Zhiyuan Wu, Nikolaos Bekiaris, Mehul B. Naik, Jin Hee Park, Mark Hyun Lee
  • Patent number: 11043361
    Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
    Type: Grant
    Filed: October 25, 2017
    Date of Patent: June 22, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • Publication number: 20210183620
    Abstract: Exemplary processing chambers may include a chamber housing at least partially defining an interior region of the semiconductor processing chamber. The chambers may include a showerhead positioned within the chamber housing. The showerhead may at least partially separate the interior region into a remote region and a processing region. Sidewalls of the chamber housing may at least partially define the processing region. The chambers may include a substrate support extending into the processing region and configured to support a substrate. The chambers may include an inductively-coupled plasma source positioned between the showerhead and the substrate support. The inductively-coupled plasma source may include a conductive material disposed within a dielectric material. The inductively-coupled plasma source may form a portion of the sidewalls of the chamber housing.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 17, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Wei Tian, Toan Q. Tran, Dmitry Lubomirsky, Greg Toland, Satoru Kobayashi
  • Publication number: 20210183678
    Abstract: Exemplary semiconductor processing chambers may include a pedestal comprising a platen configured to support a semiconductor substrate across a surface of the platen. The chambers may include a first conductive mesh incorporated within the platen and configured to operate as a first chucking mesh. The first conductive mesh may extend radially across the platen. The chambers may include a second conductive mesh incorporated within the platen and configured to operate as a second chucking mesh. The second conductive mesh may be characterized by an annular shape. The second conductive mesh may be disposed between the first conductive mesh and the surface of the platen.
    Type: Application
    Filed: December 17, 2019
    Publication date: June 17, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Madhu Santosh Kumar Mutyala, Sanjay Kamath, Deenesh Padhi
  • Patent number: 11037788
    Abstract: The present disclosure relates to a method for creating regions of different device types. The substrate is divided into a first device region and a second device region. A target etch layer is formed on a substrate. A bottom mandrel layer is formed on the target etch layer. A plurality of first pillars of a top mandrel material is formed on the bottom mandrel layer in the first device region, having a first pitch. A plurality of first spacers is formed along sidewalls of each of the plurality of first pillars. An optical planarization layer (OPL) is formed over the plurality of first pillars, the plurality of first spacers, and a top surface of the bottom mandrel layer in the first device region. A plurality of second pillars of the top mandrel material is formed on the bottom mandrel layer in the second device region, having a second pitch.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: June 15, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Min Gyu Sung, Sony Varghese
  • Patent number: 11036125
    Abstract: Described herein are apparatus and methods used to process a substrate in a chamber, in particular to position a non-round substrate in a holding chamber or a processing chamber. Further described herein are methods and apparatus that detect radiation transmitted along the thickness of the substrate between the top surface and the bottom surface, determine a signal strength as the substrate is rotated and obtaining a signal strength pattern to determine a position of the substrate within the chamber with respect to a center position.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: June 15, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Ala Moradian, Travis Tesch
  • Patent number: 11037286
    Abstract: There are provided a classifier and a method of classifying defects in a semiconductor specimen. The classifier enables assigning each class to a classification group among three or more classification groups with different priorities. Classifier further enables setting purity, accuracy and/or extraction requirements separately for each class, and optimizing the classification results in accordance with per-class requirements. During training, the classifier is configured to generate a classification rule enabling the highest possible contribution of automated classification while meeting per-class quality requirements defined for each class.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: June 15, 2021
    Assignee: Applied Materials Israel Ltd.
    Inventors: Assaf Asbag, Ohad Shaubi, Kirill Savchenko, Shiran Gan-Or, Boaz Cohen, Zeev Zohar
  • Patent number: 11035803
    Abstract: There is provided a system and a method comprising obtaining data representative of potential defects in at least one image of a semiconductor specimen, for each potential defect of at least a first subset of potential defects of the semiconductor specimen, obtaining pixel values representative of the potential defect in multiple images of the specimen which differ from each other by at least one parameter, classifying the potential defects into a plurality of first clusters, for each first cluster, building, based on pixel values representative of potential defects, at least one first matching filter for the first cluster, for at least a given potential defect not belonging to the first subset, determining whether it corresponds to a defect based on the first matching filters associated with the plurality of first clusters.
    Type: Grant
    Filed: February 26, 2020
    Date of Patent: June 15, 2021
    Assignee: Applied Materials Israel Ltd.
    Inventors: Ido Almog, Ori Golani
  • Patent number: 11037764
    Abstract: Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.
    Type: Grant
    Filed: May 6, 2017
    Date of Patent: June 15, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Philip Allan Kraus, Thai Cheng Chua, Mani Subramani
  • Publication number: 20210172054
    Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising a deposition ring assembly comprising an inner and outer deposition ring which reduces particle defects.
    Type: Application
    Filed: December 3, 2020
    Publication date: June 10, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Sanjay Bhat, Vibhu Jindal
  • Publication number: 20210175078
    Abstract: An exemplary method may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The method may also include forming a plasma within the processing region of the semiconductor processing chamber from the boron-containing precursor. The method may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber. The boron-containing material may include greater than 50% of boron. In some embodiments, the boron-containing material may include substantially all boron. In some embodiments, the method may further include delivering at least one of a germanium-containing precursor, an oxygen-containing precursor, a silicon-containing precursor, a phosphorus-containing precursor, a carbon-containing precursor, and/or a nitrogen-containing precursor to the processing region of the semiconductor processing chamber.
    Type: Application
    Filed: December 4, 2019
    Publication date: June 10, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bo Qi, Zeqing Shen, Abhijit Mallick
  • Publication number: 20210173295
    Abstract: Provided herein are apparatus, systems and methods for processing reticle blanks. A reticle processing system includes a support assembly having a plate coupled to a frame, and a carrier base assembly supported on the support assembly. The carrier base assembly comprises a wall extending from a top surface of the carrier base and defining a containment region for a reticle.
    Type: Application
    Filed: December 3, 2020
    Publication date: June 10, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Sanjay Bhat, Vibhu Jindal
  • Publication number: 20210175103
    Abstract: Exemplary semiconductor processing chambers may include a chamber body defining a substrate processing region. The chambers may include a substrate support positioned within the substrate processing region. The substrate support may include a ceramic or polymeric insulator plate positioned between a cathode assembly and an electrostatic chuck assembly. The chambers may include an acoustic emission probe in contact with the insulator plate of the substrate support.
    Type: Application
    Filed: December 6, 2019
    Publication date: June 10, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Srivatsa Madananth, Dhananjai Kumar, Yogananda Sarode Vishwanath, Jacob Andrews
  • Publication number: 20210175070
    Abstract: Methods of conformally doping three dimensional structures are discussed. Some embodiments utilize conformal silicon films deposited on the structures. The silicon films are doped after deposition to comprise halogen atoms. The structures are then annealed to dope the structures with halogen atoms from the doped silicon films.
    Type: Application
    Filed: April 5, 2019
    Publication date: June 10, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Rui CHENG, Yi YANG, Karthik JANAKIRAMAN
  • Patent number: 11030557
    Abstract: Methods, systems, and non-transitory computer readable medium for predicting arrival time of components based on historical receipt data. A method includes receiving historical receipt data corresponding to features. The method further includes performing feature analysis to generate additional features for the historical receipt data. The method further includes selecting a first set of features including at least one of the additional features. The method further includes predicting, based on the first set of features, an arrival time for one or more components of a manufacturing facility. The method further includes causing, based on the predicted arrival time, modification of a schedule in a file associated with the one or more components of the manufacturing facility.
    Type: Grant
    Filed: June 22, 2018
    Date of Patent: June 8, 2021
    Assignee: Applied Materials, Inc.
    Inventor: Kriteshwar Kaur Kohli
  • Patent number: 11031233
    Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: June 8, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Kyeong Tae Lee, Sang Wook Kim, Daehee Weon, Sang-jun Choi, Sreekar Bhaviripudi, Jahyong Kuh
  • Patent number: 11028477
    Abstract: Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: June 8, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Mark Saly, Keiichi Tanaka, Eswaranand Venkatasubramanian, Mandyam Sriram, Bhaskar Jyoti Bhuyan, Pramit Manna, David Thompson, Andrew Short
  • Patent number: 11029297
    Abstract: Methods and systems for determining concentrations of gases within a process chamber are provided. In one or more embodiments, a method includes introducing a first gas into a first cavity of a gas monitoring module, where the first cavity is thermally coupled to a second cavity of the gas monitoring module, and where the first cavity contains a first inlet and the first gas is introduced via the first inlet. The method includes introducing a gas mixture containing the first gas and a second gas into a second cavity, where the second cavity contains a second inlet and the gas mixture is introduced via the second inlet. The method also includes determining a first speed of sound inside the first cavity, determining a second speed of sound inside the second cavity, and determining a concentration of the second gas in the second cavity based on the first and second speeds of sound.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: June 8, 2021
    Assignee: Applied Materials, Inc.
    Inventor: Zhiyuan Ye
  • Patent number: 11032464
    Abstract: A depth measuring apparatus includes a camera assembly, a position sensor, and a controller. The camera assembly is configured to capture a plurality of images of a target at a plurality of distances from the target. The position sensor is configured to capture, for each of the plurality of images, corresponding position data associated with a relative distance between the camera assembly and the target. The controller is configured to, for each of a plurality of regions within the plurality of images: determine corresponding gradient values within the plurality of images; determine a corresponding maximum gradient value from the corresponding gradient values; and determine a depth measurement for the region based on the corresponding maximum gradient and the corresponding position data captured for an image from the plurality of images that includes the corresponding maximum gradient.
    Type: Grant
    Filed: October 30, 2019
    Date of Patent: June 8, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Ozkan Celik, Patricia A. Schulze, Gregory J. Freeman, Paul Z. Wirth, Tommaso Vercesi
  • Patent number: 11032945
    Abstract: Disclosed herein is a heat shield assembly for a processing chamber. The processing chamber includes a body having sidewalls, a bottom and a lid that define an interior volume. The heat shield assembly is disposed in the interior volume, and includes a heat shield and a preheat member. The preheat member includes an inner circumference, and is positioned below the heat shield. A susceptor is disposed in the interior volume and configured to support a substrate, and is positioned within the inner circumference of the preheat member. An opening is positioned between the susceptor and the preheat member. A first section of the opening is proximate to a gas inlet, and is covered by the heat shield. A second section of the annular opening is proximate a gas outlet, and is not covered by the heat shield member.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: June 8, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Shinichi Oki, Yoshinobu Mori