Patents Assigned to Applied Material
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Patent number: 11043415Abstract: In one implementation, a method of forming a cobalt layer on a substrate is provided. The method comprises forming a barrier and/or liner layer on a substrate having a feature definition formed in a first surface of the substrate, wherein the barrier and/or liner layer is formed on a sidewall and bottom surface of the feature definition. The method further comprises exposing the substrate to a ruthenium precursor to form a ruthenium-containing layer on the barrier and/or liner layer. The method further comprises exposing the substrate to a cobalt precursor to form a cobalt seed layer atop the ruthenium-containing layer. The method further comprises forming a bulk cobalt layer on the cobalt seed layer to fill the feature definition.Type: GrantFiled: September 9, 2019Date of Patent: June 22, 2021Assignee: Applied Materials, Inc.Inventors: Zhiyuan Wu, Nikolaos Bekiaris, Mehul B. Naik, Jin Hee Park, Mark Hyun Lee
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Patent number: 11043361Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.Type: GrantFiled: October 25, 2017Date of Patent: June 22, 2021Assignee: Applied Materials, Inc.Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
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Publication number: 20210183620Abstract: Exemplary processing chambers may include a chamber housing at least partially defining an interior region of the semiconductor processing chamber. The chambers may include a showerhead positioned within the chamber housing. The showerhead may at least partially separate the interior region into a remote region and a processing region. Sidewalls of the chamber housing may at least partially define the processing region. The chambers may include a substrate support extending into the processing region and configured to support a substrate. The chambers may include an inductively-coupled plasma source positioned between the showerhead and the substrate support. The inductively-coupled plasma source may include a conductive material disposed within a dielectric material. The inductively-coupled plasma source may form a portion of the sidewalls of the chamber housing.Type: ApplicationFiled: December 13, 2019Publication date: June 17, 2021Applicant: Applied Materials, Inc.Inventors: Wei Tian, Toan Q. Tran, Dmitry Lubomirsky, Greg Toland, Satoru Kobayashi
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Publication number: 20210183678Abstract: Exemplary semiconductor processing chambers may include a pedestal comprising a platen configured to support a semiconductor substrate across a surface of the platen. The chambers may include a first conductive mesh incorporated within the platen and configured to operate as a first chucking mesh. The first conductive mesh may extend radially across the platen. The chambers may include a second conductive mesh incorporated within the platen and configured to operate as a second chucking mesh. The second conductive mesh may be characterized by an annular shape. The second conductive mesh may be disposed between the first conductive mesh and the surface of the platen.Type: ApplicationFiled: December 17, 2019Publication date: June 17, 2021Applicant: Applied Materials, Inc.Inventors: Madhu Santosh Kumar Mutyala, Sanjay Kamath, Deenesh Padhi
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Patent number: 11037788Abstract: The present disclosure relates to a method for creating regions of different device types. The substrate is divided into a first device region and a second device region. A target etch layer is formed on a substrate. A bottom mandrel layer is formed on the target etch layer. A plurality of first pillars of a top mandrel material is formed on the bottom mandrel layer in the first device region, having a first pitch. A plurality of first spacers is formed along sidewalls of each of the plurality of first pillars. An optical planarization layer (OPL) is formed over the plurality of first pillars, the plurality of first spacers, and a top surface of the bottom mandrel layer in the first device region. A plurality of second pillars of the top mandrel material is formed on the bottom mandrel layer in the second device region, having a second pitch.Type: GrantFiled: November 18, 2019Date of Patent: June 15, 2021Assignee: Applied Materials, Inc.Inventors: Min Gyu Sung, Sony Varghese
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Patent number: 11036125Abstract: Described herein are apparatus and methods used to process a substrate in a chamber, in particular to position a non-round substrate in a holding chamber or a processing chamber. Further described herein are methods and apparatus that detect radiation transmitted along the thickness of the substrate between the top surface and the bottom surface, determine a signal strength as the substrate is rotated and obtaining a signal strength pattern to determine a position of the substrate within the chamber with respect to a center position.Type: GrantFiled: July 16, 2019Date of Patent: June 15, 2021Assignee: Applied Materials, Inc.Inventors: Ala Moradian, Travis Tesch
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Patent number: 11037286Abstract: There are provided a classifier and a method of classifying defects in a semiconductor specimen. The classifier enables assigning each class to a classification group among three or more classification groups with different priorities. Classifier further enables setting purity, accuracy and/or extraction requirements separately for each class, and optimizing the classification results in accordance with per-class requirements. During training, the classifier is configured to generate a classification rule enabling the highest possible contribution of automated classification while meeting per-class quality requirements defined for each class.Type: GrantFiled: September 28, 2017Date of Patent: June 15, 2021Assignee: Applied Materials Israel Ltd.Inventors: Assaf Asbag, Ohad Shaubi, Kirill Savchenko, Shiran Gan-Or, Boaz Cohen, Zeev Zohar
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Patent number: 11035803Abstract: There is provided a system and a method comprising obtaining data representative of potential defects in at least one image of a semiconductor specimen, for each potential defect of at least a first subset of potential defects of the semiconductor specimen, obtaining pixel values representative of the potential defect in multiple images of the specimen which differ from each other by at least one parameter, classifying the potential defects into a plurality of first clusters, for each first cluster, building, based on pixel values representative of potential defects, at least one first matching filter for the first cluster, for at least a given potential defect not belonging to the first subset, determining whether it corresponds to a defect based on the first matching filters associated with the plurality of first clusters.Type: GrantFiled: February 26, 2020Date of Patent: June 15, 2021Assignee: Applied Materials Israel Ltd.Inventors: Ido Almog, Ori Golani
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Patent number: 11037764Abstract: Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.Type: GrantFiled: May 6, 2017Date of Patent: June 15, 2021Assignee: Applied Materials, Inc.Inventors: Philip Allan Kraus, Thai Cheng Chua, Mani Subramani
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Publication number: 20210172054Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising a deposition ring assembly comprising an inner and outer deposition ring which reduces particle defects.Type: ApplicationFiled: December 3, 2020Publication date: June 10, 2021Applicant: Applied Materials, Inc.Inventors: Sanjay Bhat, Vibhu Jindal
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Publication number: 20210175078Abstract: An exemplary method may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The method may also include forming a plasma within the processing region of the semiconductor processing chamber from the boron-containing precursor. The method may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber. The boron-containing material may include greater than 50% of boron. In some embodiments, the boron-containing material may include substantially all boron. In some embodiments, the method may further include delivering at least one of a germanium-containing precursor, an oxygen-containing precursor, a silicon-containing precursor, a phosphorus-containing precursor, a carbon-containing precursor, and/or a nitrogen-containing precursor to the processing region of the semiconductor processing chamber.Type: ApplicationFiled: December 4, 2019Publication date: June 10, 2021Applicant: Applied Materials, Inc.Inventors: Bo Qi, Zeqing Shen, Abhijit Mallick
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Publication number: 20210173295Abstract: Provided herein are apparatus, systems and methods for processing reticle blanks. A reticle processing system includes a support assembly having a plate coupled to a frame, and a carrier base assembly supported on the support assembly. The carrier base assembly comprises a wall extending from a top surface of the carrier base and defining a containment region for a reticle.Type: ApplicationFiled: December 3, 2020Publication date: June 10, 2021Applicant: Applied Materials, Inc.Inventors: Sanjay Bhat, Vibhu Jindal
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Publication number: 20210175103Abstract: Exemplary semiconductor processing chambers may include a chamber body defining a substrate processing region. The chambers may include a substrate support positioned within the substrate processing region. The substrate support may include a ceramic or polymeric insulator plate positioned between a cathode assembly and an electrostatic chuck assembly. The chambers may include an acoustic emission probe in contact with the insulator plate of the substrate support.Type: ApplicationFiled: December 6, 2019Publication date: June 10, 2021Applicant: Applied Materials, Inc.Inventors: Srivatsa Madananth, Dhananjai Kumar, Yogananda Sarode Vishwanath, Jacob Andrews
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Publication number: 20210175070Abstract: Methods of conformally doping three dimensional structures are discussed. Some embodiments utilize conformal silicon films deposited on the structures. The silicon films are doped after deposition to comprise halogen atoms. The structures are then annealed to dope the structures with halogen atoms from the doped silicon films.Type: ApplicationFiled: April 5, 2019Publication date: June 10, 2021Applicant: Applied Materials, Inc.Inventors: Rui CHENG, Yi YANG, Karthik JANAKIRAMAN
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Patent number: 11030557Abstract: Methods, systems, and non-transitory computer readable medium for predicting arrival time of components based on historical receipt data. A method includes receiving historical receipt data corresponding to features. The method further includes performing feature analysis to generate additional features for the historical receipt data. The method further includes selecting a first set of features including at least one of the additional features. The method further includes predicting, based on the first set of features, an arrival time for one or more components of a manufacturing facility. The method further includes causing, based on the predicted arrival time, modification of a schedule in a file associated with the one or more components of the manufacturing facility.Type: GrantFiled: June 22, 2018Date of Patent: June 8, 2021Assignee: Applied Materials, Inc.Inventor: Kriteshwar Kaur Kohli
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Patent number: 11031233Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.Type: GrantFiled: September 19, 2019Date of Patent: June 8, 2021Assignee: Applied Materials, Inc.Inventors: Kyeong Tae Lee, Sang Wook Kim, Daehee Weon, Sang-jun Choi, Sreekar Bhaviripudi, Jahyong Kuh
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Patent number: 11028477Abstract: Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.Type: GrantFiled: October 19, 2016Date of Patent: June 8, 2021Assignee: Applied Materials, Inc.Inventors: Mark Saly, Keiichi Tanaka, Eswaranand Venkatasubramanian, Mandyam Sriram, Bhaskar Jyoti Bhuyan, Pramit Manna, David Thompson, Andrew Short
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Patent number: 11029297Abstract: Methods and systems for determining concentrations of gases within a process chamber are provided. In one or more embodiments, a method includes introducing a first gas into a first cavity of a gas monitoring module, where the first cavity is thermally coupled to a second cavity of the gas monitoring module, and where the first cavity contains a first inlet and the first gas is introduced via the first inlet. The method includes introducing a gas mixture containing the first gas and a second gas into a second cavity, where the second cavity contains a second inlet and the gas mixture is introduced via the second inlet. The method also includes determining a first speed of sound inside the first cavity, determining a second speed of sound inside the second cavity, and determining a concentration of the second gas in the second cavity based on the first and second speeds of sound.Type: GrantFiled: June 21, 2019Date of Patent: June 8, 2021Assignee: Applied Materials, Inc.Inventor: Zhiyuan Ye
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Patent number: 11032464Abstract: A depth measuring apparatus includes a camera assembly, a position sensor, and a controller. The camera assembly is configured to capture a plurality of images of a target at a plurality of distances from the target. The position sensor is configured to capture, for each of the plurality of images, corresponding position data associated with a relative distance between the camera assembly and the target. The controller is configured to, for each of a plurality of regions within the plurality of images: determine corresponding gradient values within the plurality of images; determine a corresponding maximum gradient value from the corresponding gradient values; and determine a depth measurement for the region based on the corresponding maximum gradient and the corresponding position data captured for an image from the plurality of images that includes the corresponding maximum gradient.Type: GrantFiled: October 30, 2019Date of Patent: June 8, 2021Assignee: Applied Materials, Inc.Inventors: Ozkan Celik, Patricia A. Schulze, Gregory J. Freeman, Paul Z. Wirth, Tommaso Vercesi
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Patent number: 11032945Abstract: Disclosed herein is a heat shield assembly for a processing chamber. The processing chamber includes a body having sidewalls, a bottom and a lid that define an interior volume. The heat shield assembly is disposed in the interior volume, and includes a heat shield and a preheat member. The preheat member includes an inner circumference, and is positioned below the heat shield. A susceptor is disposed in the interior volume and configured to support a substrate, and is positioned within the inner circumference of the preheat member. An opening is positioned between the susceptor and the preheat member. A first section of the opening is proximate to a gas inlet, and is covered by the heat shield. A second section of the annular opening is proximate a gas outlet, and is not covered by the heat shield member.Type: GrantFiled: September 10, 2019Date of Patent: June 8, 2021Assignee: Applied Materials, Inc.Inventors: Shinichi Oki, Yoshinobu Mori