Patents Assigned to Applied Material
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Patent number: 10969029Abstract: Embodiments of the disclosure generally relate to a flapper valve. The flapper valve may be used with processing chambers, such as semiconductor substrate processing chambers. In one embodiment, a flapper valve includes a housing having a first opening at a first end thereof and a second opening at a second end thereof, a first flapper pivotably disposed in the housing, and a second flapper pivotably disposed in the housing. The first and second flappers are movable to selectively open and close at least one of the first opening and the second opening.Type: GrantFiled: December 1, 2017Date of Patent: April 6, 2021Assignee: Applied Materials, Inc.Inventors: Charles T. Carlson, Tammy Jo Pride, Benjamin B. Riordon, Aaron Webb
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Patent number: 10971357Abstract: A method of modifying a layer in a semiconductor device is provided. The method includes depositing a low quality film on a semiconductor substrate, and exposing a surface of the low quality film to a first process gas comprising helium while the substrate is heated to a first temperature, and exposing a surface of the low quality film to a second process gas comprising oxygen gas while the substrate is heated to a second temperature that is different than the first temperature. The electrical properties of the film are improved by undergoing the aforementioned processes.Type: GrantFiled: October 4, 2018Date of Patent: April 6, 2021Assignee: Applied Materials, Inc.Inventors: Wei Liu, Theresa Kramer Guarini, Linlin Wang, Malcolm Bevan, Johanes S. Swenberg, Vladimir Nagorny, Bernard L. Hwang, Kin Pong Lo, Lara Hawrylchak, Rene George
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Patent number: 10971364Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about ?100 MPa to about 100 MPa.Type: GrantFiled: December 13, 2018Date of Patent: April 6, 2021Assignee: Applied Materials, Inc.Inventors: Prashant Kumar Kulshreshtha, Ziqing Duan, Karthik Thimmavajjula Narasimha, Kwangduk Douglas Lee, Bok Hoen Kim
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Patent number: 10967483Abstract: An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface.Type: GrantFiled: June 19, 2017Date of Patent: April 6, 2021Assignee: Applied Materials, Inc.Inventors: Yen-Chu Yang, Stephen Jew, Jianshe Tang, Haosheng Wu, Shou-Sung Chang, Paul D. Butterfield, Alexander John Fisher, Bum Jick Kim
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Patent number: 10971366Abstract: Methods for depositing a metal silicide are provide and include heating a substrate having a silicon-containing surface to a deposition temperature, and exposing the substrate to a deposition gas to deposit a silicide film on the silicon-containing surface during a chemical vapor deposition process. The deposition gas contains a silicon precursor, a titanium or other metal precursor, and a phosphorus or other non-metal precursor.Type: GrantFiled: May 20, 2019Date of Patent: April 6, 2021Assignee: Applied Materials, Inc.Inventors: Xuebin Li, Patricia M. Liu
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Patent number: 10971354Abstract: Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.Type: GrantFiled: July 14, 2017Date of Patent: April 6, 2021Assignee: Applied Materials, Inc.Inventors: Eric J. Bergman, John L. Klocke, Paul McHugh, Stuart Crane, Richard W. Plavidal
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Patent number: 10972280Abstract: Profile_ID files, containing proprietary hardware operating details of an originating user who originates a process recipe, are encrypted before dissemination of the process recipe to an end user. Blockchain technology is used to enable the end user to validate the encrypted process recipe and control uniform validated process across multiple chambers and locations.Type: GrantFiled: October 9, 2018Date of Patent: April 6, 2021Assignee: Applied Materials, Inc.Inventors: Adolph Miller Allen, Paul Kiely, Noufal Kappachali
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Publication number: 20210097131Abstract: Various arrangements for performing successive vector-matrix multiplication may include sequentially performing a first vector-matrix multiplication operation for each bit-order of values in an input vector. The first vector-matrix multiplication operation for each bit-order may generate an analog output. For each analog output generated by the vector-matrix multiplication operation, an analog output may be converted into one or more digital bit values, and the one or more digital bit values may be sent to a second vector-matrix multiplication operation.Type: ApplicationFiled: November 19, 2019Publication date: April 1, 2021Applicant: Applied Materials, Inc.Inventors: Tzen Wen Guo, She-Hwa Yen
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Publication number: 20210098581Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-K dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).Type: ApplicationFiled: September 28, 2020Publication date: April 1, 2021Applicant: Applied Materials, Inc.Inventors: Yongjing Lin, Karla M. Bernal Ramos, Shih Chung Chen, Yixiong Yang, Lin Dong, Steven C.H. Hung, Srinivas Gandikota
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Publication number: 20210098315Abstract: A detection circuit that may include a solid state photosensor that may include a junction, a controller, and a measurement circuit. The measurement circuit is configured to generate a measurement result that is indicative of a temperature of the junction during a curing period of the solid state photosensor. The controller is configured to control, during the curing period, the temperature of the junction, based on the measurement result.Type: ApplicationFiled: September 26, 2019Publication date: April 1, 2021Applicant: Applied Materials Israel Ltd.Inventor: Pavel Margulis
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Patent number: 10964544Abstract: Methods for selective silicide formation are described herein. The methods are generally utilized in conjunction with contact structure integration schemes and provide for improved silicide formation characteristics. In one implementation, a silicide material is selectively formed on source/drain (S/D) regions at a temperature less than about 550° C. The resulting silicide is believed to exhibit desirable contact resistance and applicability in advanced contact integration schemes.Type: GrantFiled: October 12, 2018Date of Patent: March 30, 2021Assignee: Applied Materials, Inc.Inventor: Matthias Bauer
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Patent number: 10960605Abstract: A dispensing system for an additive manufacturing includes a powder source that contains powder to form an object, and an array of nozzles positioned at a base of the powder source over a top surface of a platen where the object is to be formed. The powder flows from the powder source through the nozzles to the top surface. A respective powder wheel in each nozzle controls a flow rate of the powder. Each wheel has multiple troughs on surface of the wheel. When a motor rotates the wheel, the troughs transport the powder through the nozzle. The rotation speed of the wheel controls the flow rate. For solid parts of the object, the wheel rotates and allows the powder to be deposited on the top surface. For empty parts of the object, the wheel remains stationary to prevent the powder from flowing to the surface.Type: GrantFiled: October 9, 2018Date of Patent: March 30, 2021Assignee: Applied Materials, Inc.Inventors: Raanan Zehavi, Hou T. Ng, Nag B. Patibandla, Eric Ng, Ajey M. Joshi, Kashif Maqsood, Paul J. Steffas
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Patent number: 10964584Abstract: A process kit ring adaptor includes a rigid carrier. The rigid carrier includes an upper surface and a lower surface. The upper surface includes a first distal portion and a second distal portion to support a process kit ring. The lower surface includes a first region to interface with an end effector configured to support wafers and a solid planar central region to interface with a vacuum chuck.Type: GrantFiled: May 20, 2019Date of Patent: March 30, 2021Assignee: Applied Materials, Inc.Inventors: Leon Volfovski, Andreas Schmid, Denis Martin Koosau, Nicholas Michael Kopec, Steven Babayan, Douglas R. McAllister, Helder Lee, Jeffrey Hudgens, Damon K. Cox
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Patent number: 10964527Abstract: Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.Type: GrantFiled: May 2, 2019Date of Patent: March 30, 2021Assignee: Applied Materials, Inc.Inventors: Jong Mun Kim, Biao Liu, Cheng Pan, Erica Chen, Chentsau Ying, Srinivas Nemani, Ellie Yieh
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Patent number: 10963990Abstract: Methods, systems, and non-transitory computer readable medium are described for automated image measurement for process development and optimization. A method includes receiving original images including a first original image. Each original image is of a corresponding product associated with a manufacturing process. The method further includes performing, based on process information about the manufacturing process, feature extraction to identify features of the first original image that are expected to change based on manufacturing parameters of the manufacturing process. The method further includes generating a first synthetic image of synthetic images by performing targeted deformation of one or more of the features of the first original image.Type: GrantFiled: January 28, 2019Date of Patent: March 30, 2021Assignee: Applied Materials, Inc.Inventors: Abhinav Kumar, Benjamin Schwarz, Charles Hardy
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Patent number: 10964512Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.Type: GrantFiled: March 30, 2018Date of Patent: March 30, 2021Assignee: Applied Materials, Inc.Inventors: Mehmet Tugrul Samir, Dongqing Yang, Dmitry Lubomirsky
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Patent number: 10963753Abstract: Methods, systems, and non-transitory computer readable medium are described for automated image measurement for process development and optimization. A method includes receiving an image of a product associated with a manufacturing process; determining, using a trained machine learning model, an image classification for the image; selecting, based on the image classification, one or more image processing algorithms for the image; pre-processing the image based on at least one of the one or more image processing algorithms to generate an enhanced image; measuring, using a first image processing algorithm of the one or more image processing algorithms, one or more attributes of the enhanced image to determine image measurements; and reporting the image measurements. The manufacturing parameters of the manufacturing process are to be updated based on the image measurements.Type: GrantFiled: January 28, 2019Date of Patent: March 30, 2021Assignee: Applied Materials, Inc.Inventors: Abhinav Kumar, Benjamin Schwarz, Charles Hardy
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Publication number: 20210086239Abstract: Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.Type: ApplicationFiled: September 18, 2020Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: Tejas Ulavi, Arkaprava Dan, Sanjeev Baluja, Wei V. Tang
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Publication number: 20210087689Abstract: Process chambers and methods for leveling a motor shaft and substrate support plane are described. The process chamber includes a motor shaft connected to the process chamber with a plurality of motor bolts. A first plurality of sensors is arranged at about the same radial distance from the rotational axis and at different angular positions relative to the rotational axis and a second plurality of sensors are arranged to measure the support plane. An angle-dependent motor leveling profile is determined and shim values for the motor bolts are determined to level the motor shaft. The support plane is measured using the second plurality of sensors to level the support plane perpendicular to the motor shaft.Type: ApplicationFiled: September 18, 2020Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: Ashutosh Agarwal, Tejas Ulavi, Sanjeev Baluja
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Publication number: 20210087686Abstract: Process chamber lids having a pumping liner with a showerhead and gas funnel within an open central region are described. The showerhead is spaced a distance from the gas funnel to form a gap and the gas funnel has an opening to provide a flow of gas into the gap. The gas funnel includes a plurality of apertures extending from the front surface to a common region adjacent the back surface of the gas funnel. A purge ring is in contact with the back surface of the gas funnel and aligned so that a circular channel formed in the bottom surface of the purge ring body is positioned adjacent the common area of the apertures in the gas funnel.Type: ApplicationFiled: September 22, 2020Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: Muhannad Mustafa, Muhammad M. Rasheed, Mario D. Sanchez, Anqing Cui
