Patents Assigned to Applied Material
  • Publication number: 20200371431
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer embedded in the multilayer stack of reflective layers.
    Type: Application
    Filed: May 19, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Wen Xiao, Vibhu Jindal
  • Publication number: 20200373309
    Abstract: Electronic devices and methods of forming electronic devices using a reduced number of hardmask materials and reusing lithography reticles are described. Patterned substrates are formed using a combination of etch selective hardmask materials and reusing reticles to provide a pattern of repeating trapezoidal and rhomboidal openings.
    Type: Application
    Filed: May 7, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventor: Russell Chin Yee Teo
  • Publication number: 20200373200
    Abstract: A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal, the metal cap comprising one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.
    Type: Application
    Filed: May 18, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Srinivas Gandikota, Steven C.H. Hung, Srinivas D. Nemani, Yixiong Yang, Susmit Singha Roy, Nikolaos Bekiaris
  • Publication number: 20200371430
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from bismuth and iron.
    Type: Application
    Filed: May 19, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Vibhu Jindal
  • Publication number: 20200373411
    Abstract: Method of forming an electronic device with a bottom isolation dielectric between a pair of gate stacks is described. Each of the gate stacks comprises a plurality of gate layers. A sacrificial film having a liner on a top and side thereof is on top of the gate layers. A capping layer is on the top of the liner.
    Type: Application
    Filed: May 15, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Byeong Chan Lee, Tejinder Singh, Bencherki Mebarki
  • Publication number: 20200373178
    Abstract: Apparatus and methods to process one or more substrate are described. A processing chamber comprises a support assembly, a chamber lid, and a controller. The chamber lid has a front surface facing the support assembly, a first sensor on the front surface and a second sensor on the front surface, the first sensor positioned at a first distance from the central rotational axis, and the second sensor positioned at a second distance from the central rotational axis greater than the first distance. The controller is configured to determine if a substrate is within or outside of the substrate support region of the support assembly.
    Type: Application
    Filed: May 18, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Sanggyum Kim, Prasanth Narayanan, Subramanian Tamilmani, Mandyam Sriram
  • Publication number: 20200373318
    Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an ?-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).
    Type: Application
    Filed: May 18, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Jacqueline S. Wrench, Yixiong Yang, Yong Wu, Wei V. Tang, Srinivas Gandikota, Yongjing Lin, Karla M. Barnal Ramos, Shih Chung Chen
  • Publication number: 20200371427
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tellurium and antimony.
    Type: Application
    Filed: May 19, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Vibhu Jindal
  • Publication number: 20200371423
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from iron and tellurium.
    Type: Application
    Filed: May 19, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Vibhu Jindal
  • Publication number: 20200373404
    Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).
    Type: Application
    Filed: May 18, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Yongjing Lin, Karla M. Bernal Ramos, Luping Li, Shih Chung Chen, Jacqueline S. Wrench, Yixiong Yang, Steven C.H. Hung, Srinivas Gandikota, Naomi Yoshida, Lin Dong
  • Publication number: 20200373168
    Abstract: A method may include forming a plasma of a fluorine-containing precursor and contacting a semiconductor substrate with plasma effluents. The semiconductor substrate may include a layer of a first silicon-containing material having a first germanium content formed over the semiconductor substrate, and alternating layers of a second silicon-containing material and a third silicon-containing material over the layer of the first silicon-containing material. The third silicon-containing material may have a second germanium content. The method may further include laterally recessing the third silicon-containing material relative to the first and second silicon-containing materials. The method may further include depositing a spacer material adjacent to the third silicon-containing material relative to the first and second silicon-containing materials. The method may also include etching the first silicon-containing material relative to the second silicon-containing material and the spacer material.
    Type: Application
    Filed: April 16, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventor: Byeong Chan Lee
  • Publication number: 20200370180
    Abstract: Provided are gas distribution apparatus with a showerhead having a front plate and a back plate spaced to form a gas volume, the front plate having an inner surface adjacent the gas volume and an outer surface with a plurality of apertures extending therethrough, the gas volume having a center region and an outer region; a first inlet in fluid communication with the center region of the gas volume, the inlet having an inside and an outside; and a mixer disposed on the inside of the inlet to increase gas flow temperature. Also provided are processing chamber apparatus and methods of depositing a film.
    Type: Application
    Filed: May 18, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Ashutosh Agarwal, Sanjeev Baluja, Dhritiman Subha Kashyap, Kartik Shah, Yanjun Xia
  • Patent number: 10843306
    Abstract: A method of fabricating a polishing layer of a polishing pad includes successively depositing a plurality of layers with a 3D printer, each layer of the plurality of polishing layers deposited by ejecting a pad material precursor from a nozzle and solidifying the pad material precursor to form a solidified pad material.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: November 24, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Rajeev Bajaj, Barry Lee Chin, Terrance Y. Lee
  • Patent number: 10845317
    Abstract: A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: November 24, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Todd Egan, Mehdi Vaez-Iravani, Samer Banna, Kyle Tantiwong, Gregory Kirk, Abraham Ravid, Yaoming Shen
  • Patent number: 10845249
    Abstract: An apparatus for processing substrates includes a continuum radiation source, a source manifold optically coupled to the continuum radiation source and comprising: a plurality of beam guides, each having a first end that optically couples the beam guide to the continuum radiation source; and a second end. The apparatus also includes a detector manifold to detect radiation originating from the source manifold and transmitted through a processing area, and one or more transmission pyrometers configured to analyze the source radiation and the transmitted radiation to determine an inferred temperature proximate the processing area.
    Type: Grant
    Filed: May 25, 2018
    Date of Patent: November 24, 2020
    Assignee: Applied Materials, Inc.
    Inventor: Samuel C. Howells
  • Patent number: 10847393
    Abstract: Embodiments disclosed herein include a sensor wafer. In an embodiment, the sensor wafer comprises a substrate, wherein the substrate comprises a first surface, a second surface opposite the first surface, and an edge surface between the first surface and the second surface. In an embodiment, the sensor wafer further comprises a plurality of sensor regions formed along the edge surface, wherein each sensor region comprises a self-referencing capacitive sensor.
    Type: Grant
    Filed: September 4, 2018
    Date of Patent: November 24, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Charles G. Potter, Eli Mor
  • Patent number: 10847360
    Abstract: Methods and systems relating to processes for treating a silicon nitride film on a workpiece including supporting the workpiece in a chamber, introducing an amine gas into the chamber and establishing a pressure of at least 5 atmospheres, and exposing the silicon nitride film on the workpiece to the amine gas while the pressure in the chamber is at least 5 atmospheres.
    Type: Grant
    Filed: May 25, 2017
    Date of Patent: November 24, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Keith Tatseun Wong, Sean Kang, Srinivas D. Nemani, Ellie Y. Yieh
  • Patent number: 10847368
    Abstract: A coating layer is deposited on a patterned feature on a first portion of a substrate. A second portion of the substrate outside the patterned feature is etched. The etching and the depositing are performed in a single pulsed plasma process using at least one of a pulsed source power signal and a pulsed bias power signal.
    Type: Grant
    Filed: April 7, 2017
    Date of Patent: November 24, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Byungkook Kong, Sangwook Kim, SeungHyun Park, Abhjeet Bagal, Kyoungjin Lee, Daksh Agarwal
  • Patent number: 10847386
    Abstract: Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: November 24, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Jennifer Y. Sun, Ren-Guan Duan, Jie Yuan, Li Xu, Kenneth S. Collins
  • Patent number: 10847402
    Abstract: A method and structure for a bonding layer are disclosed. The bonding structure includes a first portion surrounding an opening in a body defining a dam thereabout. A second portion surrounds the first portion. The first portion is formed from a material resistant to degradation from exposure to a process gas. The second portion is formed from a different material than the material of the first portion. The first portion further includes one or more additives to change properties thereof.
    Type: Grant
    Filed: April 2, 2018
    Date of Patent: November 24, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Wendell Glenn Boyd, Jr., Sumanth Banda