Abstract: Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.

Abstract: Methods of processing a semiconductor substrate and apparatus to process semiconductor substrates are described. The methods and apparatus described enable the repetitive cyclic low temperature application of a chemistry and high temperature treatment step to a substrate.

Abstract: Embodiments of the present disclosure generally relate to a substrate processing chamber, and components thereof, for forming semiconductor devices. The processing chamber comprises a substrate support, and an edge ring is disposed around the substrate support. The edge ring comprises a material selected from the group consisting of quartz, silicon, cross-linked polystyrene and divinylbenzene, polyether ether ketone, Al2O3, and AlN. The material of the edge ring is selected to modulate the properties of hardmask films deposited on substrates in the processing chamber. As such, hardmask films having desired film properties can be deposited in the processing chamber without scaling up the RF power to the chamber.

Abstract: A method of forming a metal oxide is disclosed herein. The methods are performed by atomic layer deposition without the use of plasma. The methods utilize a heated substrate exposed to a co-flow of H2 and O2 to form radical species which react with metal precursors to form metal oxides.

Abstract: A method of fabricating a polishing pad using an additive manufacturing system includes depositing a first set of successive layers onto a support by droplet ejection. Depositing the first set of successive layers includes dispensing a polishing pad precursor to first regions corresponding to partitions of the polishing pad and dispensing a sacrificial material to second regions corresponding to grooves of the polishing pad. A second set of successive layers is deposited by droplet ejection over the first set of successive layers. The second set of successive layers corresponds to a lower portion of the polishing pad. The first set of successive layer and the second set of successive layers provide a body. The body is removed from the support. Removing the sacrificial material from the body provides the polishing pad with a polishing surface that has the partitions separated by the grooves.

Abstract: The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor package. In one embodiment, a glass or silicon substrate is structured by micro-blasting or laser ablation to form structures for formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor package with embedded dies therein.

Abstract: Embodiments of the disclosure generally relate to a system, apparatus and method for testing a coating over a semiconductor chamber component. In one embodiment, a test station comprises a hollow tube, a sensor coupled to a top end of the tube and a processing system communicatively coupled to the sensor. The hollow tube has an open bottom end configured for sealingly engaging a coating layer of the semiconductor chamber component. The sensor is configured to detect the presence of a gaseous byproduct of a reaction between a reagent disposed in the hollow tube and a base layer disposed under the coating layer. The processing system is configured to determine exposure of the base layer through the coating layer in response to information about the presence of the gaseous byproduct. In another embodiment, the processing system is communicatively coupled to each sensor of a plurality of test stations.

Abstract: An additive manufacturing apparatus includes a dispensing system positionable over a platen to deliver a powder, an actuator to move the dispensing system along a scan axis, and an energy source to fuse a portion of the powder. The dispensing system has a hopper to hold the powder and a dispenser. The dispenser includes a channel extending along a longitudinal axis from a proximal end to a distal end. The proximal end of the channel of the dispenser is configured to receive the powder from the powder source. A powder conveyor is positioned within the channel to move the powder from the proximal end along a length of the channel, and a plurality of apertures are arranged along the longitudinal axis of the channel. The dispenser is configured such that flow of powder through each aperture is independently controllable.

Abstract: Exemplary methods for selective etching of semiconductor materials may include flowing a fluorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may also include flowing a silicon-containing suppressant into the processing region of the semiconductor processing chamber. The methods may further include contacting a substrate with the fluorine-containing precursor and the silicon-containing suppressant. The substrate may include an exposed region of silicon nitride and an exposed region of silicon oxide. The methods may also include selectively etching the exposed region of silicon nitride to the exposed region of silicon oxide.

Abstract: Described herein are methods and systems for chamber matching in a manufacturing facility. A method may include receiving a first chamber recipe advice for a first chamber and a second chamber recipe advice for a second chamber. The chamber recipe advices describe a set of tunable inputs and a set of outputs for a process. The method may further include adjusting at least one of the set of first chamber input parameters or the set of second chamber input parameters and at least one of the set of first chamber output parameters or the set of second chamber output parameters to substantially match the first and second chamber recipe advices.

Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.

Abstract: Methods of etching film stacks to from gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.

Abstract: An FI having an in-situ particle detector and a method for particle detection therein are provided. In one aspect, the FI includes a fan, a substrate support, a particle detector, and an exhaust outlet. The fan, substrate support, and particle detector are arranged such that, in operation, the fan directs air towards the exhaust outlet and over a substrate on the substrate support to create laminar flow. The particle detector, positioned downstream from the substrate support and upstream from the exhaust outlet, analyzes the air and detects particle concentration before the particles are exhausted. The collected particle detection data may be combined with data from other sensors in the FI and used to identify the source of particle contamination. The particle detector may also be incorporated into other system components, including but not limited to, a load-lock or buffer chamber to detect particle concentration therein.

Abstract: Additive manufacturing includes successively forming a plurality of layers on a support. Depositing a layer from the plurality of layers includes dispensing first particles, selectively dispensing second particles in selected regions corresponding to a surface of the object, and fusing at least a portion of the layer. The layer has the first particles throughout and the second particles in the selected regions. Alternatively or in addition, forming the plurality of layers includes depositing multiple groups of layers. Depositing a group of layers includes, for each layer in the group of layers dispensing a feed material to provide the layer, and after dispensing the feed material and before dispensing a subsequent layer fusing a selected portion of the layer. After all layers in the group of layers are dispensed, a volume of the group of layers that extends through all the layers in the group of layers is fused.

Abstract: A method and apparatus for forming an optical stack having uniform and accurate layers is provided. A processing tool used to form the optical stack comprises, within an enclosed environment, a first transfer chamber, an on-board metrology unit, and a second transfer chamber. A first plurality of processing chambers is coupled to the first transfer chamber or the second transfer chamber. The on-board metrology unit is disposed between the first transfer chamber and the second transfer chamber. The on-board metrology unit is configured to measure one or more optical properties of the individual layers of the optical stack without exposing the layers to an ambient environment.

Abstract: Apparatus and methods for providing backside pressure control and edge purge gas to a substrate in a processing chamber. A seal band within a pocket of a substrate support defines an inner pocket region and an outer pocket region. The seal band has a pressure dependent controlled leakage rate so that a backside gas flow to the inner pocket region can diffuse through the seal band to the outer pocket region to create an edge purge while providing backside pressure to the substrate. Processing chambers, methods of processing a substrate and non-transitory computer-readable medium containing instructions to process a substrate are also disclosed.

Abstract: Methods of forming semiconductor device with fluorine-incorporated metal nitride films are described. A substrate surface is exposed to a metal fluoride precursor to form a metal-fluorine species on the substrate surface. The substrate surface is exposed to a nitriding agent to react with the metal-fluorine species to form a fluorine-incorporated metal nitride film.

Abstract: Lid assemblies for processing chamber and processing chambers including the lid assemblies are described. The lid assemblies include a high temperature lid module and a housing. The high temperature lid module being positioned adjacent a process liner of a processing chamber. The flexible housing positioned around the high temperature lid module and joined to the high temperature lid module with an elastomeric ring.

Abstract: Implementations of the present disclosure generally relate to methods and apparatus for generating and controlling plasma, for example RF filters, used with plasma chambers. In one implementation, a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber body, a powered gas distribution manifold enclosing a processing volume and a radio frequency (RF) filter. A pedestal having a substrate-supporting surface is disposed in the processing volume. A heating assembly comprising one or more heating elements is disposed within the pedestal for controlling a temperature profile of the substrate-supporting surface. A tuning assembly comprising a tuning electrode is disposed within the pedestal between the one or more heating elements and the substrate-supporting surface. The RF filter comprises an air core inductor, wherein at least one of the heating elements, the tuning electrode, and the gas distribution manifold is electrically coupled to the RF filter.