Patents Assigned to Applied Material
  • Patent number: 10879038
    Abstract: Provided herein are approaches for reducing particles in an ion implanter. In some embodiments, an electrostatic filter of the ion implanter may include a housing and a plurality of conductive beam optics within the housing, the plurality of conductive beam optics arranged around an ion beam-line. At least one conductive beam optic of the plurality of conductive beam optics may include a conductive core element, a resistive material disposed around the conductive core, and a conductive layer disposed around the resistive material.
    Type: Grant
    Filed: July 2, 2019
    Date of Patent: December 29, 2020
    Assignee: Applied Materials, Inc.
    Inventor: Scott E. Peitzsch
  • Patent number: 10879094
    Abstract: An electrostatic chucking force tool is described that may be used on workpiece carriers for micromechanical and semiconductor processing. One example includes a workpiece fitting to hold a workpiece when gripped by an electrostatic chucking force by an electrostatic chuck, an arm coupled to the workpiece fitting to pull the workpiece through the workpiece fitting laterally across the chuck, and a force gauge coupled to the arm to measure an amount of force with which the workpiece fitting is pulled by the arm in order to move the workpiece.
    Type: Grant
    Filed: November 23, 2016
    Date of Patent: December 29, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Srinivas D. Nemani, Gautam Pisharody, Seshadri Ramaswami, Shambhu N. Roy, Niranjan Kumar
  • Patent number: 10877368
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a an absorber layer on the capping layer, the absorber layer made from an alloy of at least two absorber materials.
    Type: Grant
    Filed: July 18, 2017
    Date of Patent: December 29, 2020
    Assignee: Applied Materials, Inc.
    Inventor: Vibhu Jindal
  • Patent number: 10875093
    Abstract: Additive manufacturing includes successively forming a plurality of layers on a support. Depositing a layer from the plurality of layers includes dispensing first particles, selectively dispensing second particles in selected regions corresponding to a surface of the object, and fusing at least a portion of the layer. The layer has the first particles throughout and the second particles in the selected regions. Alternatively or in addition, forming the plurality of layers includes depositing multiple groups of layers. Depositing a group of layers includes, for each layer in the group of layers dispensing a feed material to provide the layer, and after dispensing the feed material and before dispensing a subsequent layer fusing a selected portion of the layer. After all layers in the group of layers are dispensed, a volume of the group of layers that extends through all the layers in the group of layers is fused.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: December 29, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Hou T. Ng, Nag B. Patibandla, Ajey M. Joshi, Bharath Swaminathan, Ashavani Kumar, Eric Ng, Bernard Frey, Kasiraman Krishnan
  • Patent number: 10879042
    Abstract: Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.
    Type: Grant
    Filed: January 24, 2017
    Date of Patent: December 29, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Anantha K. Subramani, Farzad Houshmand, Philip A. Kraus, Abhishek Chowdhury, John C. Forster, Kallol Bera
  • Publication number: 20200400990
    Abstract: Embodiments described herein relate to flat optical devices and methods of forming flat optical devices. One embodiment includes a substrate having a first arrangement of a first plurality of pillars formed thereon. The first arrangement of the first plurality of pillars includes pillars having a height h and a lateral distance d, and a gap g corresponding to a distance between adjacent pillars of the first plurality of pillars. An aspect ratio of the gap g to the height h is between about 1:1 and about 1:20. A first encapsulation layer is disposed over the first arrangement of the first plurality of pillars. The first encapsulation layer has a refractive index of about 1.0 to about 1.5. The first encapsulation layer, the substrate, and each of the pillars of the first arrangement define a first space therebetween. The first space has a refractive index of about 1.0 to about 1.5.
    Type: Application
    Filed: June 18, 2020
    Publication date: December 24, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Ludovic GODET, Tapashree ROY, Prerna Sonthalia GORADIA, Srobona SEN, Robert Jan VISSER, Nitin DEEPAK, Tapash CHAKRABORTY
  • Publication number: 20200402549
    Abstract: A memory circuit may include a memory array, and the memory array may include a plurality of data columns. The plurality of data columns may be configured to store data bits and provide data signals when selected by a read operation. The memory array may also include one or more reference columns distributed in the memory array and configured to provide a reference signal. The reference signal may track with process, voltage, and temperature variations that are specific to the memory array, and may be used to remove a common signal component and adjust the signal level to distinguish between logic 0 and logic 1 data signals.
    Type: Application
    Filed: September 1, 2020
    Publication date: December 24, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Frank Tzen-Wen Guo, Bhuvaneshwari Ayyagari-Sangamalli, Angada B. Sachid, Blessy Alexander
  • Publication number: 20200402772
    Abstract: Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp2 to sp3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.
    Type: Application
    Filed: June 3, 2020
    Publication date: December 24, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Laksheswar Kalita, Son Nguyen, Dmitry Lubomirsky, Kenneth D. Schatz
  • Patent number: 10872800
    Abstract: An electrostatic chuck assembly includes a puck and a cooling plate. The puck includes an electrically insulative upper puck plate comprising one or more heating elements and one or more electrodes to electrostatically secure a substrate and further includes a lower puck plate bonded to the upper puck plate by a metal bond, the lower puck plate comprising a plurality of features distributed over a bottom side of the lower puck plate at a plurality of different distances from a center of the lower puck plate, wherein each of the plurality of features accommodates one of a plurality of fasteners. The cooling plate is coupled to the puck by the plurality of fasteners, wherein the plurality of fasteners each apply an approximately equal fastening force to couple the cooling plate to the puck.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: December 22, 2020
    Assignee: Applied Materials, Inc.
    Inventor: Vijay D. Parkhe
  • Patent number: 10872778
    Abstract: Exemplary etching methods may include flowing a hydrogen-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include flowing a fluorine-containing precursor into the substrate processing region. The methods may include contacting a substrate housed in the substrate processing region with the hydrogen-containing precursor and the fluorine-containing precursor. The substrate may define a trench. A spacer may be formed along a sidewall of the trench, and the spacer may include a plurality of layers including a first layer of a carbon-containing material, a second layer of an oxygen-containing material, and a third layer of a carbon-containing material. The second layer of the spacer may be disposed between the first layer and third layer of the spacer. The methods may also include removing the oxygen-containing material.
    Type: Grant
    Filed: July 6, 2018
    Date of Patent: December 22, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Zhijun Chen, Chia-Ling Kao, Anchuan Wang, Nitin Ingle
  • Patent number: 10870911
    Abstract: Embodiments disclosed herein generally related to system for forming a semiconductor structure. The processing chamber includes a chamber body, a substrate support device, a quartz envelope, one or more heating devices, a gas injection assembly, and a pump device. The chamber body defines an interior volume. The substrate support device is configured to support one or more substrates during processing. The quartz envelope is disposed in the processing chamber. The quartz envelope is configured to house the substrate support device. The heating devices are disposed about the quartz envelope. The gas injection assembly is coupled to the processing chamber. The gas injection assembly is configured to provide an NH3 gas to the interior volume of the processing chamber. The pump device is coupled to the processing chamber. The pump device is configured to maintain the processing chamber at a pressure of at least 10 atm.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: December 22, 2020
    Assignee: Applied Materials, Inc.
    Inventor: Christopher S. Olsen
  • Patent number: 10872763
    Abstract: Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include delivering a nitrogen-containing precursor or an oxygen-containing precursor to a substrate contained in a semiconductor processing chamber. The methods may include forming reactive ligands on an exposed surface of the substrate with the nitrogen-containing precursor or the oxygen-containing precursor. The methods may also include forming a high-k dielectric material overlying the substrate.
    Type: Grant
    Filed: May 3, 2019
    Date of Patent: December 22, 2020
    Assignee: Applied Materials, Inc.
    Inventors: David Chu, Steven C. Hung, Malcolm J. Bevan, Charles Chu, Tatsuya E. Sato, Shih-Chung Chen, Patricia M. Liu, Johanes Swenberg
  • Patent number: 10872749
    Abstract: A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber has a base component body. The base component body has an exterior surface configured to face a processing environment of the processing chamber. A textured skin is conformable to the exterior surface. The textured skin has a first side configured to be disposed against the exterior surface and a second side facing away from the first side. The second side has a plurality of engineered features configured to enhance adhesion of material deposited on the textured skin during use of the processing chamber.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: December 22, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Gangadhar Sheelavant, Cariappa Achappa Baduvamanda, Kaushik Vaidya, Bopanna Ichettira Vasantha
  • Publication number: 20200392621
    Abstract: Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.
    Type: Application
    Filed: August 25, 2020
    Publication date: December 17, 2020
    Applicant: Applied Materials, Inc
    Inventors: Joseph AuBuchon, Sanjeev Baluja, Dhritiman Subha Kashyap, Jared Ahmad Lee, Tejas Ulavi, Michael Rice
  • Publication number: 20200395222
    Abstract: Embodiments of this disclosure provide methods for etching oxide materials. Some embodiments of this disclosure provide methods which selectively etch oxide materials over other materials. In some embodiments, the methods of this disclosure are performed by atomic layer etching (ALE). In some embodiments, the methods of this disclosure are performed within a processing chamber comprising a nickel chamber material.
    Type: Application
    Filed: June 11, 2020
    Publication date: December 17, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Keenan N. Woods, Zhenjiang Cui, Mark Saly
  • Publication number: 20200393242
    Abstract: A diagnostic disc includes a disc body having a sidewall around a circumference of the disc body and at least one protrusion extending outwardly from a top of the sidewall. A non-contact sensor is attached to an underside of each of the at least one protrusion. A a printed circuit board (PCB) is positioned within an interior formed by the disc body. Circuitry is disposed on the PCB and coupled to each non-contact sensor, the circuitry including at least a wireless communication circuit, a memory, and a battery. A cover is positioned over the circuitry inside of the sidewall, wherein the cover seals the circuitry within the interior formed by the disc body from an environment outside of the disc body.
    Type: Application
    Filed: June 8, 2020
    Publication date: December 17, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Yogananda Sarode Vishwanath, Phillip A. Criminale
  • Publication number: 20200395218
    Abstract: Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.
    Type: Application
    Filed: June 12, 2020
    Publication date: December 17, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Sean M. Seutter, Mun Kyu Park, Hien M Le, Chih-Chiang Chuang
  • Publication number: 20200395538
    Abstract: Exemplary semiconductor structures for neuromorphic applications may include a first layer overlying a substrate material. The first layer may be or include a first oxide material. The structures may include a second layer disposed adjacent the first layer. The second layer may be or include a second oxide material. The structures may also include an electrode material deposited overlying the second layer.
    Type: Application
    Filed: May 26, 2020
    Publication date: December 17, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Deepak Kamalanathan, Archana Kumar, Siddarth Krishnan
  • Publication number: 20200395194
    Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap.
    Type: Application
    Filed: September 1, 2020
    Publication date: December 17, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Kallol Bera, Dmitry A. Dzilno, Anantha K. Subramani, John C. Forster, Tsutomu Tanaka
  • Publication number: 20200392623
    Abstract: Metal coordination complexes comprising an iridium atom coordinated to at least one diazabutadiene based ligand having a structure represented by: where R1 and R4 are independently selected from the group consisting of C1-C4 alkyl and amino groups, and each of R2 and R3 are independently selected from the group consisting of H, C1-C3 alkyl, or amino groups are described. Processing methods using the metal coordination complexes are also described.
    Type: Application
    Filed: June 29, 2020
    Publication date: December 17, 2020
    Applicant: Applied Materials, Inc.
    Inventor: Thomas Knisley