Abstract: Embodiments provide systems, apparatus, and methods for an improved load port that includes a frame supporting a dock and a carrier opener; an elevator operable to raise and lower the carrier opener; an isolation compartment within which the elevator is operable to move, the isolation compartment including a volume isolated from a volume of an equipment front end module (EFEM); and a purge supply within the isolation compartment operable to purge the isolation compartment of reactive gas trapped within the isolation compartment. Numerous additional aspects are disclosed.

Abstract: Methods of forming fully aligned vias connecting two metal lines extending in two directions are described. The fully aligned via is aligned with the first metal line and the second metal line along both directions. A third metal layer is patterned on a top of a second metal layer in electrical contact with a first metal layer. The patterned third metal layer is misaligned from the top of the second metal layer. The second metal layer is recessed to expose sides of the second metal layer and remove portions not aligned sides of the third metal layer.

Abstract: Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include delivering a nitrogen-containing precursor or an oxygen-containing precursor to a substrate contained in a semiconductor processing chamber. The methods may include forming reactive ligands on an exposed surface of the substrate with the nitrogen-containing precursor or the oxygen-containing precursor. The methods may also include forming a high-k dielectric material overlying the substrate.

Abstract: Methods for selectively depositing on non-metallic surfaces are disclosed. Some embodiments of the disclosure utilize an unsaturated hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked non-metallic surfaces. Some embodiments of the disclosure relate to methods of forming metallic vias with decreased resistance.

Abstract: Embodiments of the disclosure include apparatus and methods for modifying a surface of a substrate using a surface modification process. The process of modifying a surface of a substrate generally includes the alteration of a physical or chemical property and/or redistribution of a portion of an exposed material on the surface of the substrate by use of one or more energetic particle beams while the substrate is disposed within a particle beam modification apparatus. Embodiments of the disclosure also provide a surface modification process that includes one or more pre-modification processing steps and/or one or more post-modification processing steps that are all performed within one processing system.

Abstract: The present invention discloses a hybrid (mixed) formulation composition for 3D additive manufacturing and a manufacturing process. The hybrid formulation composition possesses capability of UV radiation curing and thermal curing. The hybrid formulation composition is designed to be cured by UV radiation in the 3D printing/additive manufacturing process and then post cure by heat to get its final properties. The hybrid formulation composition consists of acrylates (oligomer, monomer, and diluent), photoinitiators, and isocyanate-containing prepolymers which comprises poly-ols (di-ol, tri-ol), urea, urethane, and isocyanates. The hybrid formulation composition may also include reaction accelerator, dye, pigment, and fillers. The finished products of the hybrid formulation composition possess rubber-like properties and can be used in the applications such as shoe sole, toys, medical, and wearables goods . . . etc.

Abstract: Methods of producing gratings with trenches having variable height are provided. In one example, a method of forming a diffracted optical element may include providing an optical grating layer over a substrate, patterning a hardmask over the optical grating layer, and forming a sacrificial layer over the hardmask, the sacrificial layer having a non-uniform height measured from a top surface of the optical grating layer. The method may further include etching a plurality of angled trenches into the optical grating layer to form an optical grating, wherein a first depth of a first trench of the plurality of trenches is different than a second depth of a second trench of the plurality of trenches.

Abstract: Embodiments of the present disclosure generally relate to protective coatings on an aerospace component and methods for depositing the protective coatings. In one or more embodiments, a method for depositing a coating on an aerospace component includes depositing one or more layers on a surface of the aerospace component using an atomic layer deposition or chemical vapor deposition process, and performing a partial oxidation and annealing process to convert the one or more layers to a coalesced layer having a preferred phase crystalline assembly. During oxidation cycles, an aluminum depleted region is formed at the surface of the aerospace component, and an aluminum oxide region is formed between the aluminum depleted region and the coalesced layer. The coalesced layer forms a protective coating, which decreases the rate of aluminum depletion from the aerospace component and the rate of new aluminum oxide scale formation.

Abstract: An indirectly heated cathode ion source having a cylindrical housing with two open ends is disclosed. The cathode and repeller are sized to fit within the two open ends. These components may be inserted into the open ends, creating a small radial spacing that provides electrical isolation between the cylindrical housing and the cathode and repeller. In another embodiment, the repeller may be disposed from the end of the cylindrical housing creating a small axial spacing. In another embodiment, insulators are used to hold the cathode and repeller in place. This design results in a reduced distance between the cathode column and the extraction aperture, which may be beneficial to the generation of ion beams of certain species.

Abstract: Methods of cleaning a photomask may include heating residual coupling material on a surface of the photomask. The photomask may be characterized by active regions and edge regions. The residual coupling material may be located on portions of the edge regions of the photomask. The methods may include applying an etchant to the residual coupling material. The methods may also include rinsing the etchant from the photomask. A portion of the active regions of the photomask may be maintained substantially free of the etchant during the method.

Abstract: An article such as a susceptor includes a body of a thermally conductive material coated by a first protective layer and a second protective layer over a surface of the body. The first protective layer is a thermally conductive ceramic. The second protective layer covers the first protective layer and is a plasma resistant ceramic thin film that is resistant to cracking at temperatures of 650 degrees Celsius.

Abstract: Implementations described herein generally relate to methods for forming a low-k dielectric material on a semiconductor substrate. More specifically, implementations described herein relate to methods of forming a silicon oxide film at high pressure and low temperatures. In one implementation, a method of forming a silicon oxide film is provided. The method comprises loading a substrate having a silicon-containing film formed thereon into a processing region of a high-pressure vessel. The method further comprises forming a silicon oxide film on the silicon-containing film. Forming the silicon oxide film on the silicon-containing film comprises exposing the silicon-containing film to a processing gas comprising steam at a pressure greater than about 1 bar and maintaining the high-pressure vessel at a temperature between about 100 degrees Celsius and about 500 degrees Celsius.

Abstract: Data indicative of a group of defect candidates may be obtained. The data may be indicative of a group of defect candidates and may include values of attributes for each defect candidate of the group of defect candidates. Sub-groups of defect candidates may be iteratively selected for review using a review recipe to classify the defect candidates in each selected sub-group based on the values of attributes of respective defect candidates and classification results of previously reviewed defect candidates. The sub-groups may be selected until a sampling stop condition is fulfilled to obtain a classification output for the wafer. Instructions specifying at least one of the sampling stop condition, the inspection recipe, or the review recipe may be altered and additional defect candidates in a next wafer may be classified by using the altered instructions.

Abstract: Methods and apparatus for processing a substrate are provided herein. In one implementation, the apparatus includes a load lock chamber coupled to a transfer chamber. The transfer chamber is coupled to a thermal process chamber and a substrate is transferred between each of the load lock chamber, the transfer chamber, and the thermal process chamber. In other implementations, a process platform having a load lock chamber, a transfer chamber, and a thermal process chamber is disclosed. Methods of measuring oxygen concentration in a load lock chamber via evacuation of a transfer chamber are also described herein.

Abstract: Embodiments include process monitoring devices and methods of using such process monitoring devices. In one embodiment, the process monitoring device includes a substrate. The process monitoring device may also include a plurality of sensors formed on a support surface of the substrate. According to an embodiment, each sensor is capable of producing an output signal that corresponds to a processing condition. Furthermore, embodiments include a process monitoring device that includes a network interface device that is formed on the substrate. According to an embodiment each of the plurality of sensors is communicatively coupled to the network interface device. The network interface device allows for the output signals obtained from the sensors to be wirelessly transmitted to an external computer during processing operations.

Abstract: A method includes generating, based on a process recipe, a first electrical control signal by a processing device external to a particular radio frequency (RF) environment. The method further includes converting the first electrical control signal into an alternative control signal, transmitting the alternative control signal to a converter within the particular RF environment over a non-conductive communication link, and converting the alternative control signal into a second electrical control signal by the converter. The method further includes controlling a first plurality of elements via one or more switching devices using the second electrical control signal. The method further includes generating, based on the process recipe, a third signal by the processing device and controlling a second plurality of elements disposed outside of the RF environment using the third signal.

Abstract: Embodiments include devices and methods for detecting material deposition and material removal performed by a wafer processing tool. In an embodiment, one or more micro sensors mounted on a process chamber of the wafer processing tool are capable of operating under vacuum conditions and/or may measure material deposition and removal rates in real-time during a plasma-less wafer fabrication process. Other embodiments are also described and claimed.

Abstract: Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (SAM) is used to achieve selective area deposition. Methods described herein relate to alternating SAM molecule and hydroxyl moiety exposure operations which may be utilized to form SAM layers suitable for blocking deposition of subsequently deposited materials.

Abstract: Robots including spaced upper arms are described. The robot includes first and second upper arms rotatable about a shoulder axis wherein the second upper arm is spaced from the first upper arm. The other robot components (first and second forearms, first and second wrist members, and first and second end effectors) are interleaved in the space between the first and second upper arms. Each of the first and second upper arms may be individually and independently controlled. Methods of operating the robot and electronic device processing systems including the robot are provided, as are numerous other aspects.

Abstract: Implementations of the present disclosure provide an adapter for use in a processing chamber. In one implementation, the adapter comprises a hollow body having a first end and a second end opposing the first end, a first block and a second block symmetrically disposed within the hollow body about a longitudinal axis of the body, wherein the first block and the second block define a central opening therebetween, and a retention device disposed in contact with the first and second blocks to confine the movement of the first and second blocks with respect to the hollow body. The central opening is sized so that the first block and the second block provide direct contact with a press seal of the lamp.