Patents Assigned to Applied Material
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Publication number: 20200098586Abstract: Exemplary methods for removing nitride may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may further include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and flowing the plasma effluents into a processing region of the semiconductor processing chamber housing a substrate. The substrate may include a high-aspect-ratio feature. The substrate may further include a region of exposed nitride and a region of exposed oxide. The methods may further include providing a hydrogen-containing precursor to the processing region to produce an etchant. At least a portion of the exposed nitride may be removed with the etchant.Type: ApplicationFiled: September 21, 2018Publication date: March 26, 2020Applicant: Applied Materials, Inc.Inventors: Ming Xia, Dongqing Yang, Ching-Mei Hsu
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Publication number: 20200098628Abstract: Exemplary methods of producing a semiconductor substrate may include characterizing a substrate pattern to identify a zonal distribution of a plurality of vias and a height and a radius of each via of the plurality of vias. The methods may include determining a fill rate for each via within the zonal distribution of the plurality of vias. The methods may include modifying a die pattern to adjust via fill rates between two zones of vias. The methods may also include producing a substrate according to the die pattern.Type: ApplicationFiled: September 17, 2019Publication date: March 26, 2020Applicant: Applied Materials, Inc.Inventors: Paul McHugh, Kwan Wook Roh, Gregory J. Wilson
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Patent number: 10597779Abstract: Apparatus and methods for aligning large susceptors in batch processing chambers are described. Apparatus and methods for controlling the parallelism of a susceptor relative to a gas distribution assembly are also described.Type: GrantFiled: May 25, 2016Date of Patent: March 24, 2020Assignee: Applied Materials, Inc.Inventors: William T. Weaver, Robert Brent Vopat, Joseph Yudovsky, Jason M. Schaller
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Patent number: 10596763Abstract: An additive manufacturing apparatus includes a platform, a first support, a first actuator to create relative motion along a first axis such that the first support scans across the platform, one or more printheads supported on the first support above the platform and configured to dispense successive layers of feed material to form a polishing pad, a second support, a second actuator to create relative motion along a second axis substantially perpendicular to the first axis such that the second support scans across the platform in a direction perpendicular to the first axis, and a plurality of individually addressable energy sources supported on the second support above the platform, and a controller. The energy sources are arranged in an array that extends at least along the first axis and configured to emit radiation toward the platform.Type: GrantFiled: November 10, 2017Date of Patent: March 24, 2020Assignee: Applied Materials, Inc.Inventors: Hou T. Ng, Nag B. Patibandla, Sivapackia Ganapathiappan
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Patent number: 10600611Abstract: An ion source with a crucible is disclosed. In some embodiments, the crucible is disposed in one of the ends of the ions source, opposite the cathode. In other embodiments, the crucible is disposed in one of the side walls. A feed material, which may be in solid form is disposed in the crucible. In certain embodiments, the feed material is sputtered by ions and electrons in the plasma. In other embodiments, the feed material is heated so that it vaporizes. The ion source may be oriented so that the crucible is disposed in the lowest wall so that gravity retains the feed material in the crucible.Type: GrantFiled: November 14, 2018Date of Patent: March 24, 2020Assignee: Applied Materials, Inc.Inventors: Klaus Becker, Daniel Alvarado, Michael St. Peter, Graham Wright
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Patent number: 10600639Abstract: Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon nitride surface on a semiconductor substrate within a processing region of a semiconductor processing chamber. The methods may include forming an inert plasma within the processing region of the processing chamber. Effluents of the inert plasma may be utilized to modify the oxidized silicon nitride. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified oxidized silicon nitride from the semiconductor substrate.Type: GrantFiled: July 16, 2018Date of Patent: March 24, 2020Assignee: Applied Materials, Inc.Inventors: Jungmin Ko, Tom Choi, Nitin Ingle, Kwang-Soo Kim, Theodore Wou
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Publication number: 20200090972Abstract: Exemplary support assemblies may include a top puck defining a substrate support surface, where the top puck is also characterized by a height. The assemblies may include a stem coupled with the top puck on a second surface of the top puck opposite the substrate support surface. The assemblies may include an RF electrode embedded within the top puck proximate the substrate support surface. The assemblies may include a heater embedded within the top puck. The assemblies may also include a ground shield embedded within the top puck. The ground shield may be characterized by an inner region extending radially through the top puck. The ground shield may further be characterized by an outer region extending perpendicular to the inner region.Type: ApplicationFiled: September 14, 2018Publication date: March 19, 2020Applicant: Applied Materials, Inc.Inventors: David Benjaminson, Michael Grace, Soonam Park, Dmitry Lubomirsky, Jaeyong Cho, Nikolai Kalnin, Don Channa K. Kaluarachchi
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Publication number: 20200091018Abstract: Exemplary etching methods may include flowing a hydrogen-containing precursor into a semiconductor processing chamber. The methods may include flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma of the fluorine-containing precursor in the remote plasma region. The methods may include etching a pre-determined amount of a silicon-containing material from a substrate in a processing region of the semiconductor processing chamber. The methods may include measuring a radical density within the remote plasma region during the etching. The methods may also include halting the flow of the hydrogen-containing precursor into the semiconductor processing chamber when the radical density measured over time correlates to a produced amount of etchant to remove the pre-determined amount of the silicon-containing material.Type: ApplicationFiled: September 14, 2018Publication date: March 19, 2020Applicant: Applied Materials, Inc.Inventors: Chirantha P. Rodrigo, Suketu A. Parikh, Tsz Keung Cheung, Satya Gowthami Achanta, Jingchun Zhang, Saravjeet Singh, Tae Won Kim
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Publication number: 20200091002Abstract: Processing methods may be performed to produce three-dimensional interconnects on a substrate. The methods may include forming a first metal interconnect layer over a semiconductor substrate. The methods may include forming a first dielectric layer over the first metal interconnect layer. The methods may include forming a second metal interconnect layer over the first dielectric layer. The methods may include forming a patterning mask overlying the second metal interconnect layer. The methods may also include simultaneously etching each of the first metal interconnect layer, the first dielectric layer, and the second metal interconnect layer to expose the substrate to produce a multilayer interconnect structure in a first lateral direction.Type: ApplicationFiled: September 13, 2019Publication date: March 19, 2020Applicant: Applied Materials, Inc.Inventor: Suketu A. Parikh
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Publication number: 20200090907Abstract: Systems and methods may be used to enact plasma tuning. Exemplary semiconductor processing chambers may include a pedestal positioned within the chamber and configured to support a substrate. The pedestal may include an electrode operable to form a plasma within a processing region of the semiconductor processing chamber, with the processing region at least partially defined by the pedestal. The pedestal may include a heater embedded within the pedestal, and the heater may be coupled with a power supply. An RF filter may be coupled between the power supply and the heater. A shunt capacitor may also be coupled between the RF filter and the heater.Type: ApplicationFiled: September 18, 2018Publication date: March 19, 2020Applicant: Applied Materials, Inc.Inventors: Junghoon Kim, Tae Cho, Theodore Wou, Soonam Park, Dmitry Lubomirsky
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Publication number: 20200091019Abstract: Embodiments of the present technology may include a method of forming a stack of semiconductor layers. The method may include depositing a first silicon oxide layer on a substrate. The method may also include depositing a first silicon layer on the first silicon oxide layer. The method may include depositing a first silicon nitride layer on the first silicon layer. The method may further include depositing a second silicon layer on the first silicon nitride layer. In addition, the method may include depositing a stress layer on a side of the substrate opposite a side of the substrate with the first silicon oxide layer. The operations may form a structure of semiconductor layers, where the structure includes the first silicon oxide layer, the first silicon layer, the first silicon nitride layer, the second silicon layer, the substrate, and the stress layer. Other methods of reducing stress are described.Type: ApplicationFiled: November 19, 2019Publication date: March 19, 2020Applicant: Applied Materials, Inc.Inventors: Liyan Miao, Chentsau Ying, Xinhai Han, Long Lin
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Patent number: 10595365Abstract: Embodiments of the invention generally provide a lid heater for a plasma processing chamber. In one embodiment, a lid heater assembly is provided that includes a thermally conductive base. The thermally conductive base has a planar ring shape defining an inner opening. The lid heater assembly further includes a heating element disposed on the thermally conductive base, and an insulated center core disposed across the inner opening of the thermally conductive base.Type: GrantFiled: October 5, 2011Date of Patent: March 17, 2020Assignee: Applied Materials, Inc.Inventors: Alan H. Ouye, Graeme Scott, Keven Kaisheng Yu, Michael N. Grimbergen
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Patent number: 10589399Abstract: A chemical mechanical polishing system includes a substrate support configured to hold a substrate, a polishing pad assembly include a membrane and a polishing pad portion having a polishing surface, a polishing pad carrier, and a drive system configured to cause relative motion between the substrate support and the polishing pad carrier. The polishing pad portion is joined to the membrane on a side opposite the polishing surface. The polishing surface has a width parallel to the polishing surface at least four times smaller than a diameter of the substrate. An outer surface of the polishing pad portion includes at least one recess and at least one plateau having a top surface that provides the polishing surface. The polishing surface has a plurality of edges defined by intersections between side walls of the at least one recess and a top surface of the at least one plateau.Type: GrantFiled: March 17, 2017Date of Patent: March 17, 2020Assignee: Applied Materials, Inc.Inventors: Jeonghoon Oh, Edwin C. Suarez, Jason Garcheung Fung, Eric Lau, King Yi Heung, Ashwin Murugappan Chockalingam, Daniel Redfield, Charles C. Garretson, Thomas H. Osterheld
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Patent number: 10589397Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.Type: GrantFiled: February 3, 2017Date of Patent: March 17, 2020Assignee: Applied Materials, Inc.Inventors: Alain Duboust, Wen-Chiang Tu, Shih-Haur Shen, Jimin Zhang, Ingemar Carlsson, Boguslaw A. Swedek, Zhihong Wang, Stephen Jew, David H. Mai, Huyen Tran
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Patent number: 10593560Abstract: Exemplary magnetic induction plasma systems for generating plasma products are provided. The magnetic induction plasma system may include a first plasma source including a plurality of first sections and a plurality of second sections arranged in an alternating manner and fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source may circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source. Each of the plurality of second sections may include a dielectric material. The system may further include a plurality of first magnetic elements each of which may define a closed loop. Each of the plurality of second sections may define a plurality of recesses for receiving one of the plurality of first magnetic elements therein.Type: GrantFiled: March 1, 2018Date of Patent: March 17, 2020Assignee: Applied Materials, Inc.Inventors: Tae Seung Cho, Soonwook Jung, Junghoon Kim, Satoru Kobayashi, Kenneth D. Schatz, Soonam Park, Dmitry Lubomirsky
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Patent number: 10595415Abstract: An electronic device manufacturing system may include a mainframe to which one or more process chambers of different size may be coupled. A different number of process chambers may be coupled to each facet (i.e., side wall) of the mainframe. The process chambers coupled to one facet may be of a different size than process chambers coupled to other facets. For example, one process chamber of a first size may be coupled to a first facet, two process chambers each of a second size different than the first size may be coupled to a second facet, and three process chambers each of a third size different than the first and second sizes may be coupled to a third facet. Other configurations are possible. The mainframe may have a square or rectangular shape. Methods of assembling an electronic device manufacturing system are also provided, as are other aspects.Type: GrantFiled: June 20, 2017Date of Patent: March 17, 2020Assignee: Applied Materials, Inc.Inventors: Michael Robert Rice, Jeffrey C. Hudgens
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Patent number: 10593553Abstract: Exemplary methods for etching a germanium-containing material may include forming a plasma of a fluorine-containing precursor in a remote plasma region of a semiconductor processing chamber. The methods may include flowing effluents of the fluorine-containing precursor through apertures defined in a chamber component. The apertures may be coated with a catalytic material. The methods may include reducing a concentration of fluorine radicals in the plasma effluents with the catalytic material. The methods may also include delivering the plasma effluents to a processing region of the semiconductor processing chamber. A substrate having an exposed region of a germanium-containing material may be housed within the processing region. The methods may further include etching the germanium-containing material.Type: GrantFiled: August 6, 2018Date of Patent: March 17, 2020Assignee: Applied Materials, Inc.Inventors: Mikhail Korolik, Nitin Ingle, Dimitri Kioussis
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Patent number: 10593523Abstract: A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.Type: GrantFiled: April 26, 2016Date of Patent: March 17, 2020Assignee: Applied Materials, Inc.Inventors: Soonam Park, Yufei Zhu, Edwin C. Suarez, Nitin K. Ingle, Dmitry Lubomirsky, Jiayin Huang
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Publication number: 20200083452Abstract: The present disclosure provides an apparatus (200) for vacuum processing of a substrate (10). The apparatus (200) includes a vacuum chamber, a first track arrangement (110) configured for transportation of a substrate carrier (120), a second track arrangement (130) configured for transportation of a mask carrier (140), and a holding arrangement configured for positioning the substrate carrier (120) and the mask carrier (140) with respect to each other. The first track arrangement (110) includes a first portion configured to support the substrate carrier (120) at a first end (12) of the substrate (10) and a second portion configured to support the substrate carrier (120) at a second end (14) of the substrate (10) opposite the first end (12) of the substrate (10).Type: ApplicationFiled: February 24, 2017Publication date: March 12, 2020Applicants: Applied Materials, Inc., Applied Materials, Inc.Inventors: Matthias HEYMANNS, Stefan BANGERT, Oliver HEIMEL, Andreas SAUER, Sebastian Gunther ZANG
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Patent number: 10584068Abstract: An article comprises a plasma resistant ceramic material comprising 80-90 mol % of Y2O3, over 0 mol % to 20 mol % of ZrO2, and 10-20 mol % of Al2O3.Type: GrantFiled: October 27, 2017Date of Patent: March 10, 2020Assignee: Applied Materials, Inc.Inventors: Jennifer Y. Sun, Biraja P. Kanungo
