Abstract: Susceptor assemblies comprising a susceptor with a support post are described. The susceptor has a body with a top surface and a bottom surface. The top surface has a plurality of recesses therein. The support post is connected to the bottom surface of the susceptor to rotate the susceptor assembly. The support post includes support post vacuum plenum in fluid communication with a susceptor vacuum plenum in the body of the susceptor. The support post also includes a purge gas line extending through the support post to a purge gas plenum in the body of the susceptor.
Abstract: Embodiments described herein relate to apparatus and coating methods to reduce chamber arcing, for example, in HDP-CVD, PECVD, PE-ALD and Etch chambers. The apparatus include a ring shaped gas distributor used for in-situ deposition of coating materials, and a process chamber including the same. The ring shaped gas distributor includes a ring shaped body having at least one gas entrance port disposed on a first side thereof and a plurality of gas distribution ports disposed on a first surface of the ring shaped body. The plurality of gas distribution ports are arranged in a plurality of evenly distributed rows. The plurality of gas distribution ports in a first row of the plurality of evenly distributed rows is adapted to direct gas at an exit angle different from an exit angle of the plurality of gas distribution ports in a second row of the plurality of evenly distributed rows.
Type:
Grant
Filed:
February 5, 2019
Date of Patent:
May 19, 2020
Assignee:
Applied Materials, Inc.
Inventors:
Lin Zhang, Xuesong Lu, Andrew V. Le, Jang Seok Oh
Abstract: A system and method for generating a plurality of scan profiles based on a desired implant pattern and the uniformity of the spot beam is disclosed. The system scans the spot beam and records the number of ions as a function of position. This is referred to as the linear uniformity array. The desired implant pattern and the linear uniformity array are then combined to generate a composite pattern array. This array contemplates the non-uniformity of the scanned beam and allows the system to create scan profiles that compensate for this. The software may be executed on the controller disposed in the implantation system, or may be executed on a different computing device.
Type:
Grant
Filed:
February 1, 2019
Date of Patent:
May 19, 2020
Assignee:
Applied Materials, Inc.
Inventors:
Stanislav S. Todorov, Jeffrey Morse, John Sawyer
Abstract: In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF3-based plasma clean performed at pressures below 30 mT to remove in-situ deposited SiOx coatings from interior surfaces of a gas nozzle hole. Embodiments include a gas nozzle with bottom holes dimensioned sufficiently small to reduce or prevent the in-situ deposited chamber coatings from building up a SiOx deposits on interior surfaces of a nozzle hole.
Abstract: Apparatus and methods to deposit a film using a batch processing chamber with a plurality of heating zones are described. The film is deposited on one or more substrates and the uniformity of the deposition thickness is determined at a plurality of points. The heating zones set points are applied to a sensitivity matrix and new temperature or power set points for the heating zones are determined and set. One or more substrates are processed using the new set points and the thickness uniformity is determined and may be adjusted again to increase the uniformity.
Type:
Grant
Filed:
May 22, 2018
Date of Patent:
May 19, 2020
Assignee:
Applied Materials, Inc.
Inventors:
Gregory J. Wilson, Paul McHugh, Karthik Ramanathan
Abstract: Embodiments include processing equipment. A processing system having an optical temperature measurement subsystem is described. In an example, the optical temperature measurement subsystem includes a light source to direct an excitation light into a process chamber, and a photosensitive array to detect a response light received from the process chamber. The detected light can be monitored to determine a temperature of a substrate mounted within the process chamber. Other embodiments are also described and claimed.
Abstract: The implementations described herein generally relate to a sensing device for use in the semiconducting industry, which sense process parameters to control semiconductor processes. More specifically, the implementations relate to packaging for a surface acoustic wave (SAW) based devices or wireless or RF-responsive sensors for use in the harsh processing environments of a semiconductor processing chamber such that the neither the sensor and its components nor the chamber components interfere with or contaminate one another. The sensor packaging may include various packaging layers with or without protective coatings and a waveguide. The packaging may have a thickness chosen such that the thickness is less than the electromagnetic wavelength of a SAW sensor radio wave. The sensing devices may be disposed in cavities of the chamber, the processing volume, on chamber components, and/or on the substrate.
Type:
Grant
Filed:
September 10, 2018
Date of Patent:
May 19, 2020
Assignee:
Applied Materials, Inc.
Inventors:
Ramesh Gopalan, Simon Yavelberg, Zubin Huang
Abstract: The present disclosure relates to methods and apparatus for a thin film encapsulation (TFE). In one embodiment a process kit for use in an atomic layer deposition (ALD) chamber is disclosed and includes a dielectric window, a sealing frame, and a mask frame connected with the sealing frame, wherein the mask frame has a gas inlet channel and a gas outlet channel formed therein on opposing sides thereof.
Type:
Grant
Filed:
December 1, 2017
Date of Patent:
May 19, 2020
Assignee:
Applied Materials, Inc.
Inventors:
Shinichi Kurita, Srikanth V. Racherla, Suhas Bhoski, Xiangxin Rui
Abstract: Electroplating processing systems according to the present technology may include a recirculating tank containing a first volume of processing fluid. The recirculating tank may be fluidly coupled with a delivery pump. The systems may include a vessel configured to receive the processing fluid from the pump. The vessel may include an inner chamber and an outer chamber, and the inner chamber may be sized to hold a second volume of processing fluid less than the first volume of processing fluid. A liquid level sensor may be associated with the vessel to provide a liquid level indication in the outer chamber. The systems may include a return line coupled with an outlet of the vessel and coupled with an inlet of the recirculating tank. The systems may also include a return pump fluidly coupled with the return line. The return pump may be electrically coupled with the liquid level sensor.
Type:
Application
Filed:
January 10, 2020
Publication date:
May 14, 2020
Applicant:
Applied Materials, Inc.
Inventors:
Cameron Law, Daniel Durado, Thomas Oberlitner, Richard W. Plavidal
Abstract: Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system.
Type:
Application
Filed:
January 16, 2020
Publication date:
May 14, 2020
Applicant:
Applied Materials, Inc.
Inventors:
Ning Li, Steven D. Marcus, Tai T. Ngo, Kevin Griffin
Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and a modified alcohol with an electron withdrawing group positioned relative to a beta carbon so as to increase the acidity of a beta hydrogen attached to the beta carbon. These methods do not oxidize the underlying metal layer and are able to be performed at lower temperatures than processes performed with water or without modified alcohols.
Type:
Application
Filed:
January 10, 2020
Publication date:
May 14, 2020
Applicant:
Applied Materials, Inc.
Inventors:
Muthukumar Kaliappan, Michael Haverty, Aaron Dangerfield, Stephen Weeks, Bhaskar Jyoti Bhuyan, Mark Saly
Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R? is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.
Type:
Application
Filed:
January 20, 2020
Publication date:
May 14, 2020
Applicant:
Applied Materials, Inc.
Inventors:
Benjamin Schmiege, Jeffrey W. Anthis, David Thompson
Abstract: A method of controlling polishing includes storing a base measurement, the base measurement being a measurement of a substrate after deposition of at least one layer overlying a semiconductor wafer and before deposition of an outer layer over the at least one layer, after deposition of the outer layer over the at least one layer and during polishing of the outer layer on substrate, receiving a sequence of raw measurements of the substrate from an in-situ monitoring system, normalizing each raw measurement in the sequence of raw measurement to generate a sequence of normalized measurements using the raw measurement and the base measurement, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on at least the sequence of normalized measurements.
Type:
Grant
Filed:
June 3, 2016
Date of Patent:
May 12, 2020
Assignee:
Applied Materials, Inc.
Inventors:
Tomohiko Kitajima, Jeffrey Drue David, Jun Qian, Taketo Sekine, Garlen C. Leung, Sidney P. Huey
Abstract: Embodiments disclosed herein include a faceplate having a sensor assembly, a processing chamber having the same, and a method for monitoring a substrate in a processing chamber. In one embodiment, a faceplate is configured to introduce processing gases into a plasma processing chamber. The faceplate has one or more holes. A sensor assembly is disposed in the one or more holes. The sensor assembly has a sensor and a controller.
Abstract: Thermal monitors comprising a substrate with at least one camera position on a bottom surface thereof, a wireless communication controller and a battery. The camera has a field of view sufficient to produce an image of at least a portion of a wafer support, the image representative of the temperature within the field of view. Methods of using the thermal monitors are also described.
Abstract: In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.
Type:
Grant
Filed:
July 18, 2019
Date of Patent:
May 12, 2020
Assignee:
Applied Materials, Inc.
Inventors:
Daniel J. Hoffman, Karl M. Brown, Ying Rui, John Pipitone
Abstract: Methods and apparatuses for processing substrates, such as during silicon-germanium pre-cleans, are provided. A method includes introducing the substrate into a processing system, where the substrate contains a plurality of silicon-containing (e.g., SiGe) fins and a contaminant disposed on the silicon-containing fins, and exposing the substrate to a plasma treatment to remove at least a portion of the contaminant disposed from the silicon-containing fins. The method also includes exposing the substrate to an oxidation treatment to produce an oxide layer on the silicon-containing fins and the remaining contaminant thereon, then exposing the substrate to a dry-clean treatment to remove the oxide layer and the remaining contaminant from the silicon-containing fins and produce a cleaned surface thereon, and depositing an epitaxial layer on the cleaned surface on the silicon-containing fins.
Type:
Application
Filed:
September 17, 2019
Publication date:
May 7, 2020
Applicants:
Applied Materials, Inc., Applied Materials, Inc.
Abstract: Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.
Type:
Application
Filed:
June 6, 2018
Publication date:
May 7, 2020
Applicant:
Applied Materials, Inc.
Inventors:
Rui Cheng, Fei Wang, Abhijit Basu Mallick, Robert Jan Visser
Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.
Type:
Grant
Filed:
September 12, 2018
Date of Patent:
May 5, 2020
Assignee:
Applied Materials, Inc.
Inventors:
Jeffrey W. Anthis, Chang Ke, Pratham Jain, Benjamin Schmiege, Guoqiang Jian, Michael S. Jackson, Lei Zhou, Paul F. Ma, Liqi Wu
Abstract: Methods of forming a lanthanide-containing film comprising exposing a substrate surface to a lanthanide-containing precursor, a metal halide and a nitrogen precursor are described. The lanthanide-containing precursor has the general formula (CpRx)2Ln(N,N-dialkylamidinate) where Cp is a cyclopentadienyl or 6, 7 or 8 membered ring, R is H, C1-C4 alkyl, x=1 to number of C in Cp, alkyl is C1 to C4 alkyl. The metal halide deposits metal halide on the substrate surface and reacts with lanthanide-containing species to convert the lanthanide-containing species to a lanthanide halide. The nitrogen-containing precursor forms a lanthanide-metal-nitride film on the substrate surface.
Type:
Grant
Filed:
June 20, 2018
Date of Patent:
May 5, 2020
Assignee:
Applied Materials, Inc.
Inventors:
Benjamin Schmiege, Jeffrey W. Anthis, David Thompson