Abstract: Systems, apparatus and methods are provided involving a reduced-temperature wet scrubbing system adapted to scrub effluent gases within an abatement system. The reduced-temperature wet scrubbing system may include a wet scrubber adapted to be operated within a range of reduced temperatures and a cooling system adapted to maintain the wet scrubber within the range of reduced temperatures, which is below 23° C. The cooling system may include a coolant, preferably chilled water, adapted to cool the wet scrubber. The wet scrubbing system further may include an indication device, such as a temperature sensor, to indicate whether the wet scrubber is within the temperatures range. A controller in communication with the indication device may be provided to control the cooling system. In addition, the wet scrubbing system may include baffles and nozzles spraying chilled mist along a path of the effluent gas between an abatement tool and the wet scrubber.

Abstract: Methods and apparatus for accommodating thermal expansion of a showerhead. In a first aspect of the invention, the showerhead is movably supported by resting a rim of the showerhead on a support shelf. In a second aspect, the showerhead is suspended from the chamber wall by a plurality of hangers that are connected to the showerhead, the chamber wall, or both by pins that slide within slots so as to permit the hangers to slide radially to accommodate thermal expansion of the showerhead in the radial direction. In a third aspect, the showerhead is suspended from the wall of the vacuum chamber by a plurality of rods or flexible wires. In a fourth aspect, the showerhead is connected near its perimeter to a second material having a greater thermal expansion coefficient than the showerhead. In a fifth aspect, a heater is mounted behind the showerhead to reduce the temperature differential between the top and bottom surfaces of the showerhead or to reduce heat transfer from the workpiece to the showerhead.

Abstract: Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

Abstract: Systems, methods and mediums are provided for dynamic adjustment of sampling plans in connection with a wafer (or other device) to be measured. The invention adjusts the frequency and/or spatial resolution of measurements on an as-needed basis when one or more events occur that are likely to indicate an internal or external change affecting the manufacturing process or results. The dynamic metrology plan adjusts the spatial resolution of sampling within-wafer by adding, subtracting or replacing candidate points from the sampling plan, in response to certain events which suggest that additional or different measurements of the wafer may be desirable. Further, the invention may be used in connection with adjusting the frequency of wafer-to-wafer measurements.

Abstract: Techniques of the present invention are directed to distribution of deposition gases onto a substrate. In one embodiment, a gas distributor for use in a processing chamber is provided. The gas distributor includes a body having a gas deflecting surface and a gas distributor face. The gas deflecting surface defines a cleaning gas pathway. The gas distributor face is disposed on an opposite side of the body from the gas deflecting surface and faces toward a substrate support member. The gas distributor face includes a raised step and at least one set of apertures through the raised step. The at least one set of apertures are adapted to distribute a deposition gas over a substrate positioned on the substrate support member.

Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel.

Abstract: In plasma immersion ion implantation of a polysilicon gate, a hydride of the dopant is employed as a process gas to avoid etching the polysilicon gate, and sufficient argon gas is added to reduce added particle count to below 50 and to reduce plasma impedance fluctuations to 5% or less.

Abstract: A substrate processing system includes a processing chamber, a pedestal for supporting a substrate disposed within the processing chamber, and an optical pyrometry assembly coupled to the processing chamber to measure an emitted light originating substantially from a portion of the pedestal or substrate. The optical pyrometry assembly further includes a light receiver, and an optical detector. The optical pyrometry assembly receives a portion of the emitted light, and a temperature of the substrate is determined from an intensity of the portion of the emitted light near at least one wavelength.

Abstract: Methods and systems for determining a radial differential metrology profile of a substrate heated in a process chamber is provided. Methods and systems for determining an angular or azimuthal differential metrology profile of a rotating substrate in a processing chamber are also provided. The radial and azimuthal differential metrology profiles are applied to adjust a reference metrology profile to provide a Virtual metrology of the process chamber. The virtual metrology is applied to control the performance of the process chamber.

Abstract: A robotic end effector or blade suitable for transferring a substrate in a processing system is provided. In some embodiments, an end effector can include a body having opposing mounting and distal end, the body fabricated from a single mass of ceramic. The body can include a pair of arcuate lips extending upward from an upper surface of the body. Each lip is disposed on a respective finger disposed at the distal end of the body. An arcuate inner wall extends upward from the upper surface at the mounting end of the body. The inner wall and lips define a substrate receiving pocket. A plurality of contact pads extend upward from the upper surface of the body for supporting the substrate thereon. A recess is formed in a bottom surface of the body to accommodate a mounting clamp.

Abstract: A thermal processing system includes a source of laser radiation emitting at a laser wavelength, beam projection optics disposed between the reflective surface and a substrate support capable of holding a substrate to be processed, a pyrometer responsive to a pyrometer wavelength, and a wavelength responsive optical element having a first optical path for light in a first wavelength range including the laser wavelength, the first optical path being between the source of laser radiation and the beam projection optics, and a second optical path for light in a second wavelength range including the pyrometer wavelength, the second optical path being between the beam projection optics and the pyrometer. The system can further include a pyrometer wavelength blocking filter between the source of laser radiation and the wavelength responsive optical element.

Abstract: A method and apparatus for cleaning, rinsing and Marangoni drying substrates is provided. The invention includes spraying a line of fluid to a substrate, thereby creating an air/fluid interface line on the substrate; supplying a line of drying vapors to the air/fluid interface line, thereby creating a Marangoni drying effect along the air/fluid interface line; and moving the substrate relative to the air/fluid line. Numerous other aspects are provided.

Abstract: Systems, tools, and methods are provided in which a first signal is transmitted from a tool to a Fab indicating that all substrates to be processed have been removed from a specific carrier and that the specific carrier may be temporarily unloaded from a loadport of the tool. A second signal is transmitted from the tool to the Fab indicating that the specific carrier may be returned to the tool. While the carrier is unloaded from the tool, other carriers may be loaded on the vacated loadport. Numerous other features and aspects of the invention are disclosed.

Abstract: Methods for removing a BARC layer from a feature are provided in the present invention. In one embodiment, the method includes providing a substrate having a feature filled with a BARC layer in an etching chamber, supplying a first gas mixture comprising NH3 gas into the chamber to etch a first portion of the BARC layer filling in the feature, and supplying a second gas mixture comprising O2 gas into the etching chamber to etch the remaining portion of the BARC layer disposed in the feature.

Abstract: A process to form a copper-silicon-nitride layer on a copper surface on a semiconductor wafer is described. The process may include the step of exposing the wafer to a first plasma made from helium. The process may also include exposing the wafer to a second plasma made from a reducing gas, where the second plasma removes copper oxide from the copper surface, and exposing the wafer to silane, where the silane reacts with the copper surface to selectively form copper silicide. The process may further include exposing the wafer to a third plasma made from ammonia and molecular nitrogen to form the copper silicon nitride layer.

Abstract: A method of fabricating doped quartz component is provided herein. In one embodiment, the doped quartz component is a yttrium doped quartz ring configured to support a substrate. In another embodiment, the doped quartz component is a yttrium and aluminum doped cover ring. In yet another embodiment, the doped quartz component is a yttrium, aluminum and nitrogen containing cover ring.

Abstract: The invention generally provides a ground shield for use in a physical vapor deposition (PVD) chamber. In one embodiment, a ground shield includes a generally cylindrical body comprising an outer wall, an inner upper wall, an inner lower wall having a diameter less than a diameter of the inner upper wall and a reentrant feature coupling the upper and inner lower walls. The reentrant feature advantageously prevents arching between the shield and target, which promotes greater process uniformity and repeatability along with longer chamber component service life.

Abstract: Embodiments of the invention provide a robust bonding material suitable for joining semiconductor processing chamber components. Other embodiments provide semiconductor processing chamber components joined using a bonding material having metal filler disposed in an adhesive layer. Other embodiments include methods for manufacturing a semiconductor processing chamber component having a bonding material that includes metal filled disposed in an adhesive layer. The metal filler is suitable for reacting with halogen containing plasmas such that a halogen based metal layer is formed on the exposed portion of the bonding material upon exposure to the plasma.

Abstract: In an optical inspection tool, an image of an object under inspection, such as a semiconductor wafer, may be obtained using imaging optics defining a focal plane. Light comprising the image can be detected using multiple detectors which each register a portion of the image. The image of the object at the focal plane can be split into two, three, or more parts by mirrors or other suitable reflecting elements positioned tangent to the focal plane and/or with at least some portion at the focal plane with additional portions past the focal plane so that the focal plane lies between the imaging optics and the splitting apparatus. In some embodiments, reflective planes may be arranged to direct different portions to different detectors. Some reflective planes may be separated by a gap so that some portions of the light are directed while some portions pass through the gap.

Abstract: Methods for forming a photomask using a carbon hard mask are provided. In one embodiment, a method of forming a photomask includes etching a chromium layer through a patterned carbon hard mask layer in the presence of a plasma formed from a process gas containing chlorine and carbon monoxide.