Patents Assigned to Applied Material
  • Patent number: 7398693
    Abstract: The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.
    Type: Grant
    Filed: March 30, 2006
    Date of Patent: July 15, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Joseph Michael Ranish, Tarpan Dixit, Dean Jennings, Balasubramanian Ramachandran, Aaron Hunter, Wolfgang Aderhold, Bruce Adams, Wen Teh Chang
  • Patent number: 7401066
    Abstract: One embodiment of the present invention is a process tool optimization system that includes: (a) a data mining engine that analyzes end-of-line yield data to identify one or more process tools associated with low yield; and (b) in response to output from the analysis, analyzes process tool data from the one or more process tools to identify one or more process tool parameters associated with the low yield.
    Type: Grant
    Filed: March 21, 2002
    Date of Patent: July 15, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Israel Beinglass, Amir Feili, Amos Dor
  • Patent number: 7399647
    Abstract: Bright and dark field imaging operations in an optical inspection system occur along substantially the same optical path using the same light source by producing either a circular or an annular laser beam. Multiple beam splitting is achieved through the use of a diffractive optical element having uniform diffraction efficiency. A confocal arrangement for bright field and dark field imaging can be applied with multiple beam scanning for suppressing the signal from under-layers. A scan direction not perpendicular to the direction of movement of a target provides for improved die-to-die comparisons.
    Type: Grant
    Filed: October 7, 2005
    Date of Patent: July 15, 2008
    Assignee: Applied Materials, Inc.
    Inventor: Silviu Reinhorn
  • Patent number: 7399707
    Abstract: A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.
    Type: Grant
    Filed: January 13, 2005
    Date of Patent: July 15, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Padmanabhan Krishnaraj, Pavel Ionov, Canfeng Lai, Michael Santiago Cox, Shamouil Shamouilian
  • Patent number: 7399364
    Abstract: A method of forming a cap layer over a dielecrtic layer on a substrate including forming a plasma from a process gas including oxygen and tetraethoxysilane, and depositing the cap layer on the dielectric layer, where the cap layer comprises a thickness of about 600 ? or less, and a compressive stress of about 200 MPa or more. Also, a method of forming a cap layer over a dielectric layer on a substrate including forming a process gas by flowing together about 200 mgm to about 8000 mgm of tetraethoxysilane, about 2000 to about 20000 sccm of oxygen (O2), and about 2000 sccm to about 20000 sccm of carrier gas, generating a plasma from the process gas, where one or more RF generators supply about 50 watts to about 100 watts of low frequency RF power to the plasma, and about 100 watts to about 600 watts of high frequency RF power to the plasma, and depositing the cap layer on the dielectric layer.
    Type: Grant
    Filed: June 12, 2006
    Date of Patent: July 15, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Vu Ngoc Tran Nguyen, Bok Hoen Kim, Kang Sub Yim
  • Patent number: 7400390
    Abstract: A method for inspecting a reticle, that includes the following stages: providing a reticle designed to be exposed by light of a first wavelength during a photolithography process; defining optical characteristics of an inspection system, whereas the optical characteristics include a second wavelength that differs from the first wavelength; and configuring an inspection system in response to the defined optical characteristics. An inspection system that includes: an illumination path adapted to direct light of a second wavelength towards a reticle designed to be exposed by light of a first wavelength during a photolithography process; a collection path adapted to collect light transmitted through the reticle; whereas at least one of the illumination path and collection path is configurable such that the inspection system emulates the photolithographic process while utilizing light of the second wavelength.
    Type: Grant
    Filed: November 29, 2004
    Date of Patent: July 15, 2008
    Assignee: Applied Materials, Israel, Ltd.
    Inventors: Alex Goldenshtein, Emanuel Elyasaf
  • Patent number: 7399653
    Abstract: Nitride optoelectronic devices that have asymmetric double-sided structures and methods fabricating such structures are disclosed. Two n-type III-N layers are formed simultaneously over opposite sides of a substrate with substantially the same composition. Thereafter, a p-type III-N active layer is formed over one of the n-type III-N layers but not over the other.
    Type: Grant
    Filed: April 28, 2006
    Date of Patent: July 15, 2008
    Assignee: Applied Materials, Inc.
    Inventors: David Bour, Jacob Smith, Jie Su, Sandeep Nijhawan
  • Patent number: 7399697
    Abstract: The present invention provides a method for depositing nano-porous low dielectric constant films by reacting a mixture comprising an oxidizable silicon component and an oxidizable component having thermally labile groups with an oxidizing gas in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures.
    Type: Grant
    Filed: December 2, 2004
    Date of Patent: July 15, 2008
    Assignee: Applied Materials, Inc.
    Inventor: Robert P. Mandal
  • Patent number: 7400934
    Abstract: A CMP station can be closed loop controlled by using data obtained by an inline metrology station from a first polished wafer to affect the processing of subsequent polished wafers. The first wafer is polished and measured by the inline metrology station. The metrology station measures at various points the array dielectric thickness, field dielectric thickness, barrier residue thickness and metal residue thickness. The data is then inputted into an algorithm and polishing parameter outputs are calculated. The outputs are sent to the CMP station and used to supplement or replace the previous polishing parameters. Subsequent wafers are polished on the CMP station using the revised polishing parameters.
    Type: Grant
    Filed: March 6, 2006
    Date of Patent: July 15, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Manoocher Birang, Konstantin Y. Smekalin, David A. Chan
  • Patent number: 7399943
    Abstract: A plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber. A process gas inlet is coupled to the chamber and a process gas source coupled to the process gas inlet. The reactor further includes a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency suitable for exciting kinetic electrons, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.
    Type: Grant
    Filed: February 3, 2005
    Date of Patent: July 15, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Karl M. Brown, John Pipitone, Vineet Mehta
  • Patent number: 7399388
    Abstract: A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.
    Type: Grant
    Filed: July 25, 2003
    Date of Patent: July 15, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Farhad K. Moghadam, Michael S. Cox, Padmanabhan Krishnaraj, Thanh N. Pham
  • Patent number: 7396480
    Abstract: A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.
    Type: Grant
    Filed: May 24, 2005
    Date of Patent: July 8, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Chien-Teh Kao, Jing-Pei (Connie) Chou, Chiukin (Steven) Lai, Sal Umotoy, Joel M. Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei W. Wang, See-Eng Phan
  • Patent number: 7396565
    Abstract: Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy).
    Type: Grant
    Filed: August 6, 2004
    Date of Patent: July 8, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Michael Xi Yang, Hyungsuk Alexander Yoon, Hui Zhang, Hongbin Fang, Ming Xi
  • Patent number: 7397039
    Abstract: Improved systems, apparatus, and methods for detecting positions of moving stages and accurately compensating position error during operation (in “real time”) are provided. For some embodiments, rather than rely on two dimensional position measurements, measurements in at least three dimensions may be taken allowing compensation for pitch and roll and, therefore, more accurate position measurements. Further, by including a measurement of a beam column, compensation for movement of the beam may be performed.
    Type: Grant
    Filed: September 30, 2005
    Date of Patent: July 8, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Bruce B. Baxter, Benyamin Buller, Wenwei Qiao, Huei-Mei Kao
  • Patent number: 7397552
    Abstract: An imaging system for inspection of a sample includes an illumination module, which irradiates a surface of the sample with pulsed optical radiation. A mechanical scanner translates at least one of the sample and part of the imaging system so as to scan an area irradiated by the pulsed optical radiation over the surface in order to irradiate successive, partially overlapping frames on the surface by respective successive pulses of the pulsed radiation. A collection module collects the optical radiation scattered from the surface so as to capture a sequence of images of the irradiated frames. A system controller varies a configuration of the imaging system in alternation between at least first and second different optical configurations in synchronization with the pulsed optical radiation.
    Type: Grant
    Filed: September 22, 2005
    Date of Patent: July 8, 2008
    Assignee: Applied Materials, Israel, Ltd.
    Inventors: Avishay Guetta, Doron Korngut, Doron Shoham, Iddo Pinkas, Ronen Eynat
  • Patent number: 7393795
    Abstract: Methods for post-etch deposition on a dielectric film are provided in the present invention. In one embodiment, the method includes providing a substrate having a low-k dielectric layer disposed thereon in a etch reactor, etching the low-k dielectric layer in the etch reactor, and forming a protection layer on the etched low-k dielectric layer. In another embodiment, the method includes providing a substrate having a low-k dielectric layer disposed thereon in an etch reactor, etching the low-k dielectric layer in the reactor, bonding the etched low-k dielectric layer with a polymer gas supplied into the reactor, forming a protection layer on the etched low-k dielectric layer, and removing the protection layer formed on the etched low-k dielectric layer.
    Type: Grant
    Filed: February 1, 2006
    Date of Patent: July 1, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Robin Cheung, Siyi Li
  • Patent number: 7393459
    Abstract: A method for automatic determination of a state of a substrate in a plasma processing chamber is provided. Substrate reflectance data is collected in a processing chamber prior to processing to be analyzed with reference reflectance data to determine if the substrate state meets a control criterion. The substrate state may define the thickness and the qualities of the films on the substrate, the critical dimensions of the different layers on the substrate. The reflectance data is analyzed using a multi-variant analysis technique, such as principle component analysis. In addition to analyzing substrate state prior to processing, substrate reflectance could also be collected in a processing chamber during processing to be analyzed with reference reflectance data to further determine if the substrate state and/or the substrate processing are meeting a control criterion.
    Type: Grant
    Filed: September 10, 2004
    Date of Patent: July 1, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Matthew F Davis, Lei Lian, Quentin E. Walker
  • Patent number: 7393765
    Abstract: Device-enhancing coatings are deposited on CMOS devices by successively masking with photoresist each one of the sets of N-channel and P-channel devices while unmasking or leaving unmasked the other set, and after each step of successively masking one of the sets of devices, carrying out low temperature CVD steps with a toroidal RF plasma current while applying an RF plasma bias voltage. The temperature of the workpiece is held below a threshold photoresist removal temperature. The RF bias voltage is held at a level at which the coating is deposited with a first stress when the unmasked set consists of the P-channel devices and with a second stress when the unmasked set consists of N-channel devices.
    Type: Grant
    Filed: April 19, 2007
    Date of Patent: July 1, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Hiroji Hanawa, Kartik Ramaswamy, Kenneth S. Collins, Amir Al-Bayati, Biagio Gallo, Andrew Nguyen
  • Patent number: 7394531
    Abstract: An automated optical inspection system, comprising at least one camera having a field of view; and at least one image scanning module comprising a plurality of objective modules arranged to have fields of view covering a portion of an article during inspection, and an image selection mirror mechanism, such as a pentaprism movable to sequentially select and transfer images of the fields of view from the objective modules to the at least one camera, and a beam splitter operative to simultaneously direct illumination from at least one illumination source to a portion of the article and to direct an image of the portion of the article to at least one camera, wherein the beam splitter is operative to pivot about at least one axis, thereby to create motion of the image of the article within the field of view of the camera. The objective modules may be arranged in a pair of back-to-back arcs each served by and partially encircling its own optical head.
    Type: Grant
    Filed: October 30, 2006
    Date of Patent: July 1, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Ehud Tirosh, Boaz Kenan
  • Patent number: 7393417
    Abstract: On a wafer holding area 50 on the upper surface of a susceptor 22, a wafer W is supported by a wafer support 54 such that a gap with a predetermined distance is formed between the wafer W and a wafer heating surface 52. A projection 58 that decreases the distance of the gap with respect to the wafer W is formed on the wafer heating surface 52. At this time, the heating condition for the wafer W by the susceptor 22 is adjusted by means of the distances of the gaps at the respective portions of the wafer holding area 50. Thus, the uniformity of the planar temperature distribution of the wafer W and that of the thickness distribution of the formed film can be improved.
    Type: Grant
    Filed: October 20, 2000
    Date of Patent: July 1, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Yuji Maeda, Koji Nakanishi, Nobuo Tokai, Ichiro Kawai