Patents Assigned to Applied Material
  • GAP-FILL DEPOSITIONS INTRODUCING HYDROXYL-CONTAINING PRECURSORS IN THE FORMATION OF SILICON CONTAINING DIELECTRIC MATERIALS
    Publication number: 20080115726
    Abstract: A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.
    Type: Application
    Filed: November 16, 2007
    Publication date: May 22, 2008
    Applicant: Applied Materials, Inc.
    Inventors: Nitin K. Ingle, Shan Wong, Xinyun Xia, Vikash Banthia, Won B. Bang, Yen-Kun V. Wang
  • Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
    Patent number: 7374636
    Abstract: A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.
    Type: Grant
    Filed: July 26, 2002
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Keiji Horioka, Chun Yan, Taeho Shin, Roger Alan Lindley, Panyin Hughes, Douglas H. Burns, Evans Y. Lee, Bryan Y. Pu, Qi Li, Mahmoud Dahimene
  • Method and apparatus for dechucking a substrate
    Patent number: 7375946
    Abstract: A method and apparatus for dechucking a substrate is provided. In one embodiment, a processing chamber is provided that includes a grounded chamber body having a substrate support assembly disposed in an interior volume. A dechucking circuit selectively couples the substrate support assembly to ground or to a power source. In another embodiment of the invention, a method for dechucking a substrate includes the steps of completing a plasma process on a substrate disposed on a grounded substrate support assembly, disconnecting the substrate support assembly from ground, and applying a dechucking voltage to the substrate support assembly.
    Type: Grant
    Filed: August 16, 2004
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: John M. White, Wendell T. Blonigan
  • Method and apparatus for removing a halogen-containing residue
    Patent number: 7374696
    Abstract: The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.
    Type: Grant
    Filed: February 11, 2004
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Mark N. Kawaguchi, James S. Papanu, Scott Williams, Matthew Fenton Davis
  • Substrate gripper for a substrate handling robot
    Patent number: 7374391
    Abstract: A method and apparatus for processing substrates using a multi-chamber processing system, or cluster tool, that has an increased system throughput, increased system reliability, improved device yield performance, a more repeatable wafer processing history (or wafer history), and a reduced footprint. The various embodiments of the cluster tool may utilize two or more robots that are configured in a parallel processing configuration to transfer substrates between the various processing chambers retained in the processing racks so that a desired processing sequence can be performed on the substrates. In one aspect, the parallel processing configuration contains two or more robot assemblies that are adapted to move in a vertical and horizontal directions, to access the various processing chambers retained in generally adjacently positioned processing racks.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Michael Rice, Jeffrey Hudgens, Charles Carlson, William Tyler Weaver, Robert Lowrance, Eric Englhardt, Dean C. Hruzek, Mario David Silvetti, Michael Kuchar, Kirk Van Katwyk, Van Hoskins, Vinay Shah
  • Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply output
    Patent number: 7375947
    Abstract: In a plasma reactor having an electrostatic chuck, wafer voltage is determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage is used to accurately control the DC wafer clamping voltage.
    Type: Grant
    Filed: February 7, 2007
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Jang Gyoo Yang, Daniel J. Hoffman, Steven C. Shannon, Douglas H. Burns, Wonseok Lee, Kwang-Soo Kim
  • Method of retaining a substrate during a substrate transferring process
    Patent number: 7374393
    Abstract: A method and apparatus for processing substrates using a multi-chamber processing system, or cluster tool, that has an increased system throughput, increased system reliability, improved device yield performance, a more repeatable wafer processing history (or wafer history), and a reduced footprint. The various embodiments of the cluster tool may utilize two or more robots that are configured in a parallel processing configuration to transfer substrates between the various processing chambers retained in the processing racks so that a desired processing sequence can be performed on the substrates. In one aspect, the parallel processing configuration contains two or more robot assemblies that are adapted to move in a vertical and horizontal directions, to access the various processing chambers retained in generally adjacently positioned processing racks.
    Type: Grant
    Filed: April 5, 2006
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Mike Rice, Jeffrey Hudgens, Charles Carlson, William Tyler Weaver, Robert Lowrance, Eric Englhardt, Dean C. Hruzek, Mario David Silvetti, Michael Kuchar, Kirk Van Katwyk, Van Hoskins, Vinay Shah
  • Method and apparatus for chemical mechanical polishing of semiconductor substrates
    Patent number: 7375023
    Abstract: Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.
    Type: Grant
    Filed: March 30, 2006
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Stan D. Tsai, Liang-Yuh Chen, Lizhong Sun, Shijian Li, Feng Q. Liu, Rashid Mavliev, Ratson Morad, Daniel A. Carl
  • Conductive polishing article for electrochemical mechanical polishing
    Patent number: 7374644
    Abstract: Embodiments of a ball assembly are provided. In one embodiment, a ball assembly includes a housing, a ball, a conductive adapter and a contact element. The housing has an annular seat extending into a first end of an interior passage. The conductive adapter is coupled to a second end of the housing. The contact element electrically couples the adapter and the ball with is retained in the housing between seat and the adapter.
    Type: Grant
    Filed: June 26, 2003
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Paul D. Butterfield, Liang-Yuh Chen, Yongqi Hu, Antoine P. Manens, Rashid Mavliev, Stan D. Tsai, Feng Q. Liu, Ralph Wadensweiler
  • Polishing pads useful for endpoint detection in chemical mechanical polishing
    Patent number: 7374477
    Abstract: A polishing system can have a rotatable platen, a polishing pad secured to the platen, a carrier head to hold a substrate against the polishing pad, and an eddy current monitoring system including a coil or ferromagnetic body that extends at least partially through the polishing pad. A polishing pad can have a polishing layer and a coil or ferromagnetic body secured to the polishing layer. Recesses can be formed in a transparent window in the polishing pad.
    Type: Grant
    Filed: April 16, 2002
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Manoocher Birang, Boguslaw A. Swedek
  • Method and system for focusing a charged particle beam
    Patent number: 7375326
    Abstract: A method for focusing a charged particle beam, the method including: (a) altering a focal point of a charged particle beam according to a first focal pattern while scanning a first area of a sample and collecting a first set of detection signals; (b) altering a focal point of a charged particle beam according to a second focal pattern while scanning a second area that is ideally identical to the first area and collecting a second set of detection signals; and (c) processing the first and second set of detection signals to determine a focal characteristic; wherein the first focal pattern and the second focal pattern differ by the location of an optimal focal point.
    Type: Grant
    Filed: June 17, 2005
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Israel, Ltd.
    Inventor: Benzion Sender
  • Method and apparatus for testing function of active microstructural elements and method for producing microstructural elements using the test method
    Patent number: 7375505
    Abstract: A method and an apparatus for testing the function of a plurality of microstructural elements by irradiation with particle radiation. All of the microstructural elements detected as malfunctioning are listed in a first error list in a first test sequence. The microstructural elements listed in the first error list are tested once more in at least one further test sequence and at least the result of the test sequence last carried out is evaluated to establish the overall test result. The first test sequence is designed so that, if possible, all of the microstructural elements which are actually malfunctioning are detected. The invention further relates to a method for producing microstructural elements which are constructed as a plurality on a substrate and are tested according to the above test method.
    Type: Grant
    Filed: April 4, 2002
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Matthias Brunner, Ralf Schmid
  • Stress measurement and stress balance in films
    Patent number: 7374960
    Abstract: Methods and systems are provided of fabricating a compound nitride semiconductor structure. A substrate is disposed within a processing chamber into which a group-III precursor and a nitrogen precursor are flowed. A layer is deposited over the substrate with a thermal chemical-vapor-deposition process using the precursors. The substrate is transferred to a transfer chamber where a temperature and a curvature of the layer are measured. The substrate is then transferred to a second processing chamber where a second layer is deposited.
    Type: Grant
    Filed: August 23, 2006
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: David Bour, Sandeep Nijhawan, Lori D. Washington, Jacob W. Smith
  • Method for plasma etching a chromium layer through a carbon hard mask suitable for photomask fabrication
    Patent number: 7375038
    Abstract: Methods for etching chromium and forming a photomask using a carbon hard mask are provided. In one embodiment, a method of a chromium layer includes providing a substrate in a processing chamber, the substrate having a chromium layer partially exposed through a patterned carbon hard mask layer, providing a process gas containing chlorine and carbon monoxide into the etching chamber, and maintaining a plasma of the process gas and etching the chromium layer through the carbon hard mask layer. The method of etching a chromium layer through a patterned carbon hard mask layer is useful for fabricating photomasks.
    Type: Grant
    Filed: September 28, 2005
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventor: Ajay Kumar
  • Motorized chamber lid
    Patent number: 7371285
    Abstract: A semiconductor processing chamber having a motorized lid is provided. In one embodiment, the semiconductor processing chamber generally includes a chamber body having sidewalls and a bottom defining an interior volume. A lid assembly is coupled to the chamber body and is movable between a first position that encloses the interior volume and a second position. A hinge assembly thereto is coupled between the lid assembly and the chamber body. A motor is coupled to the hinge assembly to facilitate moving the lid assembly between the first position and the second position.
    Type: Grant
    Filed: March 19, 2004
    Date of Patent: May 13, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Michael Rosenstein, Alex Shenderovich, Marc O. Schweitzer, Ilya Lavitsky, Alvin Lau, Michael Feltsman
  • Substrate holder which is self-adjusting for substrate deformation
    Patent number: 7372690
    Abstract: A wafer chuck is designed to allow the substrate to thermally deform during charged particle beam lithography. The wafer chuck includes a compliant layer disposed over an chuck body. During lithography processing the wafer is electrostatically held in contact with a flexible compliant layer and the wafer is exposed to the charged particle beam resulting in thermal deformation of the wafer. The compliant layer deforms with the substrate and allows the wafer to deform in a predictable manner.
    Type: Grant
    Filed: February 10, 2005
    Date of Patent: May 13, 2008
    Assignee: Applied Materials, Inc.
    Inventor: Stephen Moffatt
  • Reduction of hillocks prior to dielectric barrier deposition in Cu damascene
    Patent number: 7371427
    Abstract: Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.
    Type: Grant
    Filed: May 20, 2003
    Date of Patent: May 13, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Nagarajan Rajagopalan, Meiyee Shek, Kegang Huang, Bok Hoen Kim, Hichem M'saad, Thomas Nowak
  • Electron beam source having an extraction electrode provided with a magnetic disk element
    Patent number: 7372195
    Abstract: An electron beam source for use in an electron gun. The electron beam source includes an emitter terminating in a tip. The emitter is configured to generate an electron beam. The electron beam source further includes a suppressor electrode laterally surrounding the emitter such that the tip of the emitter protrudes through the suppressor electrode and an extractor electrode disposed adjacent the tip of the emitter. The extractor electrode comprises a magnetic disk whose magnetic field is aligned with an axis of the electron beam.
    Type: Grant
    Filed: November 22, 2005
    Date of Patent: May 13, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Steven T. Coyle, Michael R. Scheinfein, William J. Devore
  • Process chamber component having electroplated yttrium containing coating
    Patent number: 7371467
    Abstract: A component capable of being exposed to a plasma in a process chamber has a structure having an electroplated coating comprising yttrium-containing species. The electroplated coating is resistant to corrosion in the plasma, and can have a compositional gradient of yttrium-containing species through a thickness of the coating. In one embodiment, the coating is formed by electroplating a layer comprising yttrium onto the surface, and then electroplating a second layer onto the first layer, and annealing the first and second layers. The second layer can comprise aluminum or zirconium. In another embodiment, the coating is formed by electroplating a layer comprising a mixture of aluminum and yttrium onto the surface and annealing the layer.
    Type: Grant
    Filed: April 13, 2004
    Date of Patent: May 13, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Nianci Han, Li Xu, Hong Shih, Yang Zhang, Danny Lu, Jennifer Y. Sun
  • Substrate support lift pin
    Patent number: D568914
    Type: Grant
    Filed: March 24, 2006
    Date of Patent: May 13, 2008
    Assignee: Applied Materials, Inc.
    Inventors: David T. Or, Keith K. Koai, Hiroyuki Takahama, Takahiro Ito, Koji Ota, Hiroshi Sato